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1.
Under the condition of nearly equilibrium concentration of vacancies, time dependence of the amount of isothermal transformation given byy=R/R f was investigated whereR f is the total structural change of resistivity on completion of the whole process andR is the measured resistivity change. The investigation was done on the 21·8 at.% (40·3wt.%) Zn alloy under the condition of relatively low supersaturation of a few degrees centigrade below the metastable R solvus line. The total transformation involves four kinetic stages: the first two stages correspond probably to diffusion-controlled growth of the R particles from the supersaturated solid solution and to the ripening of these particles till their conversion to the cubic phase takes place. The last two kinetic stages account analogously for the particles growth and ripening. Both R and phases were identified by the transmission electron microscopy. When separating the individual stages, the approximation byy=1–exp [–(mt) n] of the amount of transformationy was used. The approximation allowed to get the starting values of both the time and the change of the structural part of the electrical resistance for individual stages and also to derive the parametersm i, ni which had to be redetermined for the individual separated stages. These data made it possible to synthetize the experimental curves ofR andy vs. time for the total transformation.It is a pleasure to thank Doc. Dr. V.Syneek CSc. for stimulating the author's interest in this problem and for providing helpful discussions. I also would like to express my thanks to Ing. P.Bartuka CSc. for the transmission electron microscopic study carried out to identify the particular phases. The author is indebted to Ing.V. íma for the preparation of the investigated alloy and to Mrs. A.Mendlová and Mr. P.Vyhlídka for technical assistance.  相似文献   

2.
A study of crystallographic and uniaxial anisotropy in monocrystalline Li-ferrite films in the temperature range 4.2–550°K is presented. The experimental results K1(T) agree well with calculations based on the one ion model with crystalline field coefficients of aA=–2.77 ·10–2 cm–1, aB=3.34 · 10–2 cm–1. An experimental function Ku(T) is obtained which does not contradict the assumption that anisotropic stresses are responsible for the development of uniaxial anisotropy in Li-ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 113–116, August, 1973.  相似文献   

3.
The microsurface adsorption–spectral correction (MSASC) technique has been applied to investigate the interaction of alkali blue 6B (AB6B) with cetyltrimethylammonium bromide (CTAB). The aggregation of AB6B on CTAB obeys the Langmuir isothermal adsorption. The aggregate was characterized by MSASC. For the monomer aggregate AB6B2CTAB formed, its binding constant is calculated to be K = 3.01·105 and its molar absorptivity to be 2.45·106 liters·cm–1 at = 690 nm. The adsorption has been used to carry out quantitative detection of cationic surfactant in samples.  相似文献   

4.
Properties of the hot spots in Ar and Ne plasma of a gas-puff z-pinch were investigated. Pinhole cameras with entrance diameter 13–250 m, XRD, semiconductor detectors and flat crystal spectrographs with Si and KAP crystals were used for spatially, temporally and spectrally resolved soft x-ray diagnostics. The diameters of Ar (25–30 m) and Ne (40 um) hot spots were found and K-shell x-ray spectra were registered. Temporal evolution of x-rays within 600 ns was observed; the upper estimate of hot spots lifetime did not exceed 50 ns. The described processing and curve fitting of He-like Ar XVII lines provided the values the of electron temperature and density in Ar hot spotsT e=1·0–1·1 keV,n e=(1·8–4·0)×1027 m–3, which support the idea of the Bennett equilibrium validity for the spots.Reprinted with permission of American Institute of Physics from Dense Z-pinches, AIP Conf. Proc. 195 (Eds. N. R. Pereira, J. Davis, N. Rostoker), AIP, New York, 1989.  相似文献   

5.
An infrared (IR) radiometer electrical circuit on the basis of photoresistors and photodiodes made of silicon doped with zinc (Si) as well as the narrow bandgap semiconductor alloy Pb0.78Sn0.22Te is presented. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators functions as a radiation modulator. The threshold sensitivity turned out on a recorder is 2·10–13 W·Hz–1/2 (for the n+–n–n+ structures made of Si, =0.8–l.2m, T=300K); 1.4·10–15W·Hz–1/2 (for p+–n–n+ S-diodes on the basis of Si, =0.8–1.2m, T=300K) and 10–12W·Hz1/2 (for photodiodes on the basis of Pb0.78Sn0.22Te, =8–13m, T=77K).  相似文献   

6.
The influence of uniaxial pressure (0 < P < 2600 kg/cm2) on the intrinsic photoconductivity (PC) spectrum of p-InSb at 93 and 15°K is investigated. At 77°K the carrier concentration and mobility in the specimens were, respectively, (1.4–3.2)·1014 cm–3 and 7000 cm2/V. sec. It is established that the maximum in the PC(Em) spectra under compression is shifted towards higher energies. In the low-compression range Em/P=5·10–6eV·cm2/kg, while Em/P=1·10–6eV·cm2/kg for P > 1000 kg/cm2. It is shown that the shift of the maximum of the intrinsic PC spectra with pressure is due to the growC;th in the forbidden bandwidth (Eg), and the change in parameters characterizing carrier diffusion in the specimen bulk (the diffusion coefficient, lifetime, surface recombination velocity) plays no part. The change in Em/P with pressure is explained by the influence of valence band splitting. The deformation potential constants of the valence band |b|=(1.7±0.3) eV and |d|=(4.4±0.8)eV are calculated on the basis of a comparison between experimentally obtained data and theoretical results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 159–162, February, 1976.  相似文献   

7.
Near IR properties of the mixed TlInS2xSe2(1–x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS2xSe2(1–x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap Eg = 2.22 eV was determined for --TlInS2 crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be NA – ND = 4.8 · 109 cm–3 and 1.9 · 1011 cm–3, respectively. It was found that in the solid solutions TlInS2xSe2(1–x) for 0.3 x 1, the conductivity follows the dependence (v) = 0·s in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a tail of the density of energy states in TlInS2xSe2(1–x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.  相似文献   

8.
A simple mechanism explaining not only the magnitude but also the type of induced anisotropy on the magnesium ferrite Mg0·78 Fe2·22 O4·026 in the temperature range from 400 to 500°K has been designed. The experimentally estimated values of the microscopic bond energyl p 7×10–16 erg of the configuration contributing to theF-type anisotropy and the activation energy exp = 1·1 eV are in good correspondence with the valuesl d1·6×10–16erg and cal = 1·15 eV which have been calculated theoretically.Dedicated to Professor Dr. Jaromír Bro on his sixtieth birthday.The author would like to express his thanks to Dr. S. Krupika for valuable discussions and his interest in this paper.  相似文献   

9.
The119Sn-Mössbauer spectra ofxSnO·(70–x)SnF2·30P2O5 glasses (0 x70) measured at 78 K comprised a doublet due to Sn2+ (=3.30–3.36 mm s–1, = 1.70–1.72 mm s–1) and a weak singlet due to Sn4+ located at –0.23 mm s–1 with respect to BaSnO3. The and of Sn2+ were comparable to those of Sn2P2O7. Small Debye temperatures (146 and 155 K) were obtained from the low-temperature measurements. These results indicate that Sn2+ and Sn4+ occupied interstitial sites, being loosely and ionically bonded to distorted PO4–x F x tetrahedra.  相似文献   

10.
Temperature dependence of the angular distribution anisotropy of the 212·0 keV gamma-ray following the decay of153Tb oriented in a gadolinium host was measured at temperatures from 16 to 70 mK. Magnetic dipole hyperfine splitting parameter a0 for153Tb(Gd) and magnetic dipole moment of the153Tb ground state were estimated to be ¦a 0¦1·2×10–5 eV and ¦¦3·1 nuclear magnetons, respectively.Authors are indebted to Dr. N. A. Lebedev, Yu. V. Yushkewich and the staff of the JINR synchrocyclotron for the preparation of the153Tb activity. The participation of Ing. L. Mare, J. Ferencei and S. I. Antonov in the measurements is also acknowledged.  相似文献   

11.
The properties of p-type ZnGeP2 [p0=(5–10)·1010 cm–3, 0=(2–5)·10–7 (·cm)–1], irradiated with H+ ions [E=5 MeV, Tirr=300 K, D=(1·1012–1.7·1016) cm–2] are studied. An increase in the resistivity (to grmax - 5·1011 ·cm) and subsequent reduction in for large currents of H+ ions ( - 9·108 ·cm for D - 1.7·1016 cm–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP2 is found to be very sensitive to hydrostatic pressure [(4–5)·10–5 bar–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.  相似文献   

12.
The crystallographic anisotropy constant K1 of monociystalline lithium ferrite films was measured by the methods of ferromagnetic resonance and rotational moments. The presence of uniaxial anisotropy in the plane of a film with the constant Ku 103 erg · cm–3 is established experimentally. The nature of the uniaxial anisotropy is explained by the anisotropy of the stresses in the plane of the film, a formula is obtained to compute the angle of deflection of the easy magnetization axis from the crystallographic direction. An estimate is made of the difference in the stresses along the axes (xz) 1010 dyne · cm–2.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 16, No. 9, pp. 86–89, September, 1973.  相似文献   

13.
The strong interaction shift and width in the 2p-level of the pionic helium have been deduced from the analysis of the low-energy -4He scattering data. The obtained values are: 2p=4·0 × × 10–3 eV and 2p=1·6 × 10–3 eV. The analysis has been performed within the framework of the UST approach.Presented at the IV International Symposium Mesons and Light Nucler, Bechyn, Czechoslovakia, September 5–10, 1988.  相似文献   

14.
We derive the exact matrix field theory for a replicated grassmannian representation of a local pairing superconducting disorder ensemble including three superconducting order parameters and the spin-flip pairbreaking mechanism. Disorder is assumed to be gaussian distributed. We find by exactly solving the saddle-point equation the criterion for a vanishing gap –1 + –1 , where denotes the averaged superconducting order parameter, –1 the spin-flip scattering rate, and –1 the scattering rate corresponding to correlations of Re(–). Taken at =0, our field theory, which is exact in all orders of –1 , contains new terms in addition to those of theO( –1 ) model derived by Efetov et al. Our formulation transfers correctly to all orders the invariances of the action into symmetries of the matrix field theory. The saddle point approximation is outlined and it is shown how singular corrections to the saddle point density of states arise atE F in a gapless superconductor. Finally singular corrections in the two particle propagator, the density correlation function and the conductivity are calculated for =0 in one loop order. It turns out that these corrections can be entirely expressed by those of the single particle density of states.  相似文献   

15.
Thin film samples (10–20 thick) of niobium-nickel alloys in the composition range Nb-5 to 95 at % Ni were vapour quenched by R. F. sputtering onto fused quartz substrates held at a temperature of 450 K. It was found that fully glassy alloys were synthetized in the composition range Nb-30 to 85 at % Ni, 2·5 times larger than reported for splat-quenched alloys. Crystallization temperatures exhibited maxima near the eutectic composition and are comparable to those of splat-quenched materials. At room temperature, the electrical resistivity of these alloys lies between 176–210 cm, and the absolute thermoelectric power S between 2·20–2·52 V/K. On increasing the temperature from 4·2 to 775 K, up to which the amorphous alloys are stable, the resistivity of the alloy with=0·50 decreases by about 1·5%; the value of d/dT progressively increases with increasing Ni content, becoming positive at 0·50dS/dT of all alloys lies between 6–8·5×10–3V deg–2. The electrical behaviour of these alloys may be treated in terms of electron scattering in disordered structures assuming the nearly free-electron model, in a manner analogous to Ziman's theory of electronic transport in liquid metals.  相似文献   

16.
The intensity distribution was measured for the rotational lines of the N2 molecule in the radiation of a glow discharge in the pure gas, at pressure 0.1–5 torr, or with argon, at a total pressure of 2 torr, at a current of 40 mA. The distribution found lags behind a Boltzmann distribution in the 0–3 band (corresponding to the C3-B3 transition; the second positive system) over the pressure range 0.1–2 torr and in the 1–4 band (the C3-B3 transition; second positive system) at a pressure of 0.1 torr. In the N2 + Ar mixture there is selective amplification of the J=25, 26 rotational lines.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 17–21, September, 1970.  相似文献   

17.
The specific magnetic susceptibility of polycrystalline and powdered samples was measured between 77 °K and 570 °K. This dependence was interpreted in intrinsic range suggesting the susceptibility is given as a sum of contributions of the lattice G and of free carriers L. The temperature dependence of the lattice susceptibility G= G 0 +T was checked: G 0 =–2·35× ×10–7, =4·5×10–11. The contribution L enabled to check the effective mass of holes mh=0·25m0 suggesting memh.

Herrn A. Hrubý gilt mein Dank für die Vorbereitung des polykristallinen Ingots von CdGeAs2.  相似文献   

18.
Measurements of the complex susceptibility =i of electron-irradiated YBa2Cu3O7– show a strong influence of the electron irradiation dose, ·t on the transition temperatureT c . For irradiation doses of ·t=2.2·1019 e/cm2 we find a damage rate of T c /(·t)=–1.6·10–19 K/(e/cm2). It is assumed that the decrease ofT c is mainly a bulk effect due to the production of atomic defects like vacancies and interstitials in the Cu–O–Cu chains and in the basal planes of the unit cells.  相似文献   

19.
The dipole moments in the equilibrium ground ( g) and excited Franck–Condon states ( e FC) of the molecules of 4-(methoxy)-3-hydroxyflavone (FOM), 4-(dimethylamino)-3-hydroxyflavone (FME), and 4-N-(15-azacrown-5(-3-hydroxyflavone (FCR) in 1,4-dioxane were measured. Characteristic of these probes is excited-state intramolecular proton transfer. For comparison, the dipole moments of the molecules of 4-(dimethylamino)-3-methoxyflavone (FME3ME) were measured, for which the excited-state intramolecular proton transfer is lacking. It is established that in the case of FME, FCR, and FME3ME the dipole moments g and e FC are parallel to the absorption transition dipole moment m a responsible for absorption. Among the compounds studied, FOM has the least values of g and e FC, only 9.4·10–30 and 26.3·10–30 C·m, respectively. The dipole moments g, e FC and m a are not parallel to one another, and the angles between them lie in the range 4–55°. This effect is due to FOM not having a strong electron-donating group, such as an amino group.  相似文献   

20.
In this paper a new, sensitive, and simple method for simultaneous determination of pesticides morestan and benomyl at trace levels in waters is reported. Both chemicals, showing native fluorescence in solution at neutral medium, were fixed on C-18 silica gel at pH 1, giving a fluorescent system. The benomyl-morestan-silica gel system, after dry, was packed in a 1-mm silica cell and its synchronous fluorescence spectra were recorded at =80 nm for determination of benomyl and =25 nm for determination of morestan. Measurements of fluorescence were performed at 1=289 nm and 2=367 nm for benomyl and morestan analysis, respectively. The applicable concentration ranges were from 0.5 to 15.0 ng·ml–1 for benomyl and from 0.6 to 15.0 ng·ml–1 for morestan, with relative standard deviations of 1.2 and 1.5% for benomyl and morestan, respectively, being 0.15 and 0.18 ng·ml–1 its respective detection limits. The method was applied to the simultaneous determination of residues of both pesticides in water of different provenances.  相似文献   

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