Electrical properties of PbxSn1‐xS thin films prepared by hot wall deposition method

The Pb_xSn_1‐xS (x = 0 – 0.25) thin films were prepared on glass substrates by hot wall vacuum deposition. The films were polycrystalline monophase in nature and had orthorhombic crystal structure. The thickness of the films was about 2‐3 μm. The temperature dependences of the conductivity were measured in the temperature range from 150 to 420 K. The films revealed p‐type of conductivity. The Seebeck coefficient and conductivity values of the films was in the range of α = 6 – 360 μV/K and σ = 4.8×10^‐5 – 1.5×10^‐2 Ω^‐1·cm^‐1, respectively, at room temperature depending on concentration of the lead in the films. The lead atoms created the substitution defects Pb_Sn in the crystal lattice of the Pb_xSn_1‐xS. These defects formed the donor energy levels in the band gap. The activation energy of the films increased in the range ΔE_a = 0.121 – 0.283 eV with increasing of the lead concentration. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Substitution effects on ferroelectric,leakage current and anti‐fatigue characteristic of Bi4‐xSbxTi3O12 thin films

Bi_4‐xSb_xTi₃O₁₂ (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by sol‐gel method. The effects of various Sb³⁺ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi_4‐xSb_xTi₃O₁₂ (x≠0) thin films prefer (117) orientation. The substitution Sb³⁺ for Bi³⁺ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi_4‐xSb_xTi₃O₁₂ films display exciting electric properties. Especially when x = 0.04, the film Bi_3.96Sb_0.04Ti₃O₁₂ has achieved the max 2Pr value of 87μC/cm². This film also has a better anti‐fatigue characteristic, which can be up to 10¹⁰ switching cycles without fatigue. The leakage current density improved with J = 8×10⁻⁸ A/cm².     

Microwave dielectric properties of La(1‐2x/3)Bax(Mg0.5Sn0.5)O3 ceramics

This study examined the potential applications of microwave dielectric properties of La_(1‐2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ ceramics in rectenna. The La_(1‐2x/3)Ba_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid‐state method with various sintering temperatures. An apparent density of 6.62 g/cm³, a dielectric constant of 20.3, a quality factor of 51,700 GHz, and a temperature coefficient of resonant frequency of ‐78.2 ppm/K were obtained for La_2.98/3Ba_0.01(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of big single crystals of a new magnetic superconducting double perovskite Ba2PrRu1–xCuxO6

Single crystals of Ba₂PrRu_1–xCu_xO₆ with x = 0 to 0.2, have been grown from high temperature solutions of a mixture of PbO‐PbF₂ in the temperature range 1100–1200 °C. Thin crystals with mostly a hexagonal and triangular plate like habit measuring up to 1–2 mm across and 0.1–0.2 mm thick were obtained. The size, quality and morphology of the crystals were improved by varying the solution volume as well as additives like B₂O₃. Large crystals measuring up to 3 mm across and 0.3 to 0.5 mm thick were obtained with 5–7 wt% solute concentration and 0.51 wt% of B₂O₃. The ZFC curves exhibit a spin glass like behavior with x = 0 and a superconducting transition at 8 to 11 K depending on x = 0.05 to 0.1. The transition was also influenced by the growth temperature and post growth annealing. Powder x‐ray diffraction, EDS and Raman spectroscopic measurements confirm the presence of Cu in the crystals. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of Pb on the properties of Sr2YRu1‐xCuxO6 crystals grown from PbO‐PbF2 solutions at high temperatures

Single crystals of Sr₂YRu_1‐xCu_xO₆ with x=0 and x=0.1 were grown using PbO‐PbF₂ based solutions at different temperatures in the range 1150–1350°C. The influence of Pb from the solutions and the Cu from the solid solutions of Sr₂YRu_1‐xCu_xO₆ on the resulting crystals was studied using microstructure and magnetic property measurements. The peaks in the powder X‐ray diffraction patterns and Raman spectra do not change in the case of x=0 crystals but shift in the presence of Cu. A diamagnetic transition indicative of superconductivity was observed in the presence of Cu and an antiferromagnetic behavior with x=0. Based on these results it is concluded that Pb may not be incorporated in the crystals and even if it does the influence is not observed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tin valence and local environments in silicate glasses as determined from X-ray absorption spectroscopy

X-ray absorption spectroscopy (XAS) was used to characterize the tin (Sn) environments in four borosilicate glass nuclear waste formulations, two silicate float glasses, and three potassium aluminosilicate glasses. Sn K-edge XAS data of most glasses investigated indicate Sn⁴⁺O₆ units with average Sn-O distances near 2.03 Å. XAS data for a float glass fabricated under reducing conditions show a mixture of Sn⁴⁺O₆ and Sn²⁺O₄ sites. XAS data for three glasses indicate Sn-Sn distances ranging from 3.43 to 3.53 Å, that suggest Sn⁴⁺O₆ units linking with each other, while the 4.96 Å Sn-Sn distance for one waste glass suggests clustering of unlinked Sn⁴⁺O₆ units.     

One‐step fabrication of SnxTi1‐xO2 rutile‐type core‐shell microspheres and their electrochemical properties

Sn_xTi_1‐xO₂ core‐shell microspheres were synthesized through a simple one‐step hydrothermal method. The structural and morphologic properties were unambiguously characterized, and the electrochemical performance of the Sn_xTi_1‐xO₂ microspheres was determined by cyclic voltammetry. The possible formation mechanism of Sn_xTi_1‐xO₂ microspheres was also proposed.     

Influence of the temperature and the oxygen partial pressure on the phase formation in the system Cu – Fe – O

Copper iron oxides, Cu_1‐xFe_2+xO₄ (0 ≤ x ≤ 0.5), have been synthesized by thermal oxidation of copper ‐ iron mixtures. In this process, the phase formation and the phase stability were investigated as function of the temperature (800°C – 1200°C) and the oxygen partial pressure (1.013 x 10¹ – 1.013 x 10⁵ Pa). The phase formation starts with the reaction of the metallic components to simple oxides (Fe₃O₄, Fe₂O₃, CuO). From these simple oxides, the formation of complex oxides requires a minimum temperature of 800°C. The synthesis of single phase spinel compounds Cu²⁺_1‐2x Cu¹⁺_xFe_2+xO_4±δ is realized for 0.1 ≤ x ≤ 0.5, using specific temperature – p(O₂) – conditions for a given value of x. Remarkably, to achieve our goal, we found that the increase of x implies that of the reaction temperature and/or a decrease of the p(O₂) in the reaction gas stream. Besides, a single phase spinel CuFe₂O₄ does not exist in the temperature / p(O₂)‐field investigated. Using the results of XRD ‐ phase analysis, T ‐ p(O₂) – x – diagrams were constructed. These diagrams allow the prediction of phase compositions expected for different synthesis conditions. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐strength bimodal ultrafine Ti‐based alloys with enhanced ductility

Bulk Ti₆₅Fe₃₅ and (Ti₆₅Fe₃₅)_96.15‐xSn_3.85Nb_x (x = 0, 3, 5 and 7 at.%) alloys were prepared by cold crucible levitation melting, and tested in compression at room temperature. The Sn and Nb modified hypereutectic Ti‐Fe alloys exhibited improved mechanical properties under compression. (Ti₆₅Fe₃₅)_93.15Sn_3.85Nb₃ alloy displayed an ultimate compressive strength of 2.7 GPa and a compressive plastic strain of 15%. Electron microscope observations revealed Ti‐Fe(Sn,Nb) alloys having a bimodal microstructure with micrometer‐scale primary TiFe dendrites distributed in an ultrafine eutectic (β‐Ti+TiFe) matrix. The orientation relationship of β‐Ti with TiFe phases is TiFe (011)[100] ∥ β‐Ti (011)[100]. The improved mechanical properties are attributed to the morphology of the phase constituents and the larger lattice mismatches between β‐Ti and TiFe phases due to the additions of Sn and Nb.     

Spectral and conductivity features of novel ternary Tl1–xIn1–xSnxS2 crystals

Complex studies of novel Tl_1–xIn_1–xSn_xS₂ single crystalline alloys (x = 0.1; 0.2; 0.3; 0.4; 0.5) were performed. Here we present the study of the effect of the partial cation substitution of Sn ions by In ions on their optical absorption and photoconductivity characteristics. The dependences of optical and electric properties of the crystals of the crystalline solid solutions on temperature and composition are discussed within a framework of intrinsic defect states forming then fundamental absorption. The calculations of the charged defects responsible for the experimentally determined values of Δ₀ were done. Some increase of the concentration for charged defects with the sample temperature is probably related to the thermal ionization of some of the defects that were neutral at lower temperature. The results obtained will be analyzed within the framework of the intrinsic defect's model.     

Mössbauer investigation of tin-containing chalcogenide glasses and glass-ceramics

The parameters of Mössbauer spectra, namely isomer shift, quadrupole splitting and linewidth were obtained before and after crystallization of glass samples of composition xSn_0.5Se_0.5 (100x) (As_0.1Ge_0.3Se_0.6) with x = 5 ～ 30 mol.%. It is demonstrated that the higher the crystallinity, the more the isomer shift decreases, this is probably due to the variation of average SnSe bond length. An electric field imbalance in the Sn nucleus caused by distortion of (Sn Se₆) octahedra in glasses showed a greater quadrupole splitting as compared with glass-ceramics of the same tin content.     

The effect of alumina on the Sn/Sn redox equilibrium and the incorporation of tin in Na2O/Al2O3/SiO2 melts

Glasses with the basic compositions 10Na₂O · 10CaO · xAl₂O₃ · (80 − x)SiO₂ (x=0, 5, 15, 25) and 16Na₂O · 10CaO · xAl₂O₃ · (74 − x)SiO₂ (x=0, 5, 10, 15, 20) doped with 0.25-0.5 mol% SnO₂ were studied using square-wave-voltammetry at temperatures in the range from 1000 to 1600 °C. The voltammograms exhibit a maximum which increases linearly with increasing temperature. With increasing alumina concentration and decreasing Na₂O concentration the peak potentials get more negative. Mössbauer spectra showed two signals attributed to Sn²⁺ and Sn⁴⁺. Increasing alumina concentrations did not affect the isomer shift of Sn²⁺; however, they led to increasing quadrupole splitting, while in the case of Sn⁴⁺ both isomer shift and quadrupole splitting increased. A structural model is proposed which explains the effect of the composition on both the peak potentials and the Mössbauer parameters.     

Microwave dielectric properties of (1‐x)La(Mg0.5Sn0.5)O3‐x(Sr0.8Ca0.2)3Ti2O7 ceramic system with a near zero temperature coefficient of resonant frequency

In this study, the microwave dielectric properties of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system prepared by the conventional solid‐state method have been investigated for application in mobile communication. It was found that the diffraction peaks of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system shift to higher angles as x increases from 0.2 to 0.4. It was also found that the X‐ray diffraction patterns of the 0.8La(Mg_0.5Sn_0.5)O₃‐0.2(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramics exhibited no significant phase difference at different sintering temperatures. The average grain size of the (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system decreased from 6.4 to 4.3 μm as the value of x increased from 0.2 to 0.4 sintered at 1550 °C for 4 h. The dielectric constant increased from 26.6 to 35.9 and the quality factor (Q×f) decreased from 31,600 to 23,300 GHz for (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system as the x value increases from 0.2 to 0.4 sintered at 1550 °C for 4 h. The average value of temperature coefficient of resonant frequency (τ_f) increased from ‐18 to +8 ppm/ K as the x value increases from 0.2 to 0.4. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magneto‐transport properties of polycrystalline YBa2(Cu1‐xMx)3O7‐δ (M = B and Mn)

The magnetic and transport properties of polycrystalline YBa₂ (Cu_1‐xM_x)₃ O_7‐δ (M = B and Mn) superconductor was investigated. Samples of YBa₂(Cu_1‐xB_x)₃O_7‐δ doped with several concentrations of boron B(x = 0.05 and 0.1) were investigated using magnetization measurements. A YBa₂(Cu_1‐xMn_x)₃O_7‐δ sample doped with Mn with concentration of x = 0.02 was investigated using current‐voltage (I‐V) measurements. Our results on the YBa₂(Cu_1‐xB_x)₃O_7‐δ samples reveal a considerable increase in the hysterisis width of the magnetization, M versus the applied magnetic field H with increasing boron concentration. The lower critical field was also found to be enhanced by boron doping. The critical current density, J_c was found to be significantly enhanced in the Mn‐doped sample. The enhancement of J_c was found to be more significant at the lower temperatures for all applied magnetic fields used (0 Oe, 300 Oe, and 500 Oe). Thus, chemical doping is suggested to enhance the vortex pinning forces in the YBCO samples. From the resistivity (R‐T) measurements, chemical doping of the samples was found to have no significant effect on the critical temperature, T_c. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Correlation of structure and properties of melt spun PbSn30Sb7Cu quaternary alloys

Using x‐ray diffractometry, double bridge method and dynamic resonance technique structure, electrical resistivity, elastic modulus, internal friction and thermal diffusivity of Pb_63‐xSn₃₀Sb₇Cu_x [x=0 or x≤2.5] quaternary melt spun alloys have been investigated. Adding Cu to PbSn₃₀Sb₇ decreases electrical resistivity, elastic modulus and internal friction. The PbSn₃₀Sb₇Cu₁ melt spun alloy has better properties as bearing alloy, such as low electrical resistivity, high elastic modulus and adequate internal friction, compared with the Pb₈₈Sn₁₀Cu₂ alloy used for automotive applications (FIAT Normalizzazione). That means, it has good properties as lead free (non‐toxic) bearing alloy. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Properties of AgGa1‐xInxSe2 single crystals grown by Bridgman method

High‐pure and single‐phase AgGa_1‐xIn_xSe₂ (x=0.2) polycrystalline was synthesized by the mechanical and temperature oscillation method. Adopting the modified Bridgman method an integral AgGa_1‐xIn_xSe₂ single crystal with diameter of 14 mm and length of 35 mm has been obtained at the rate of 6 mm/day. It was found that there is a new cleavage face which was (101), and observed the four order X‐ray spectrum of the {101} faces. By the method of DSC analysis the melting and freezing points of the AgGa_1‐xIn_xSe₂ (x=0.2) single crystal were about 828°C and 790°C. The transmission spectra of the AgGa_1‐xIn_xSe₂ (x=0.2) sample of 5×6×2 mm³ were obtained by means of UV and IR spectrophotometer. The limiting frequency was 774.316nm and the band gap was 1.6eV. It can be found in the infrared spectrum that the infrared transmission was above 60% from 4000cm^‐1 to 600cm^‐1. The value of α in 5.3µm and 10.6µm were 0.022cm^‐1 and 0.1cm^‐1 respectively. All results showed that the crystal was of good quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The effect of Sn addition on the glass-forming ability of Cu-Ti-Zr-Ni-Si metallic glass alloys

The effect of Sn substitution for Ni on the glass-forming ability was studied in Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ (x=0,2,4,6,8) alloys by using thermal analysis and X-ray diffractometry. With increasing x from 0 to 8, the glass transition temperature, T_g, of melt-spun Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ alloys increased gradually from 720 to 737 K. On the other hand, the crystallization temperature, T_x, increased from 757 K at x=0 to 765 K at x=2, being nearly same with further increase of x. Partial substitution of Ni by Sn in Cu₄₇Ti₃₃Zr₁₁Ni₈Si₁ promotes the glass formation. Both amorphous Cu₄₇Ti₃₃Zr₁₁Ni_8−xSn_xSi₁ alloys prepared by melt spinning and injection casting showed similar crystallization process during continuous heating in DSC. Temperature range of undercooled liquid region exhibits good correlation with the critical diameter for the formation of an amorphous phase in injection casting.     

Structure and properties of single crystals of tin-doped potassium titanyl phosphate

Single crystals with the compositions KTi_0.47Sn_0.53OPO₄ and KTi_0.25Sn_0.75OPO₄ were grown by spontaneous crystallization from flux in the K₂O-TiO₂-SnO₂-P₂O₅ quaternary system, and their structures were established from precision X-ray diffraction data. The incorporation of tin into the crystals lowers the asymmetry of cation positions in the (Ti,Sn)O₆ octahedra. The addition of even a small amount (x < 0.4) of tin to the K(Ti_{1 ? x} Sn_x)OPO₄ crystals causes fast symmetrization of the octahedra. The process slows down with an increase in the tin content until the attainment of the composition KSnOPO₄ and localization of tin in the centers of octahedra. It is these structural features that are responsible for a decrease in the optical nonlinearity of the crystals and in the intensity of second harmonic generation by laser radiation in these crystals.     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on electrical conduction behavior of La1‐3xCaxBaxSrxMnO3 synthesized by chemical route

In the manganite La_1‐xM_xMnO₃ (M = Ca, Ba, Sr) the doping concentration introduces a mixed valency (Mn³⁺, Mn⁴⁺) which governs the magnetic and electrical properties of the compound. The perovskite oxides La_1‐3xCa_xBa_xSr_xMnO₃ (x = 0.00, 0.05, 0.10) were prepared by chemical method. Single‐phase formation is confirmed by XRD studies. The electrical behavior of compositions with x = 0.00, 0.05 and 0.10 in the system La_1‐3xCa_xBa_xSr_xMnO₃ was studied in the temperature range 300‐420 K. It is observed that conductivity decreases with increasing temperature as well as dopants concentration. Metallic behavior of these compositions decreases with increasing dopants concentration (x). The microstructures of these samples have been characterized using scanning electron microscopy (SEM). (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)