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1.
Tunneling current in a ferromagnet/superconductor/ferromagnet double tunnel junction induces a nonequilibrium spin accumulation in the superconductor. We study theoretically the response of such a system to applied magnetic field. We show that the interplay between the magnetic field and the spin accumulation could lead to novel bias voltage dependence and magnetic field dependence of the superconducting gap function, and bring in anomalous asymmetry in the spin-dependent transport. Our study also indicates a possible application of the spin injection. 相似文献
2.
S. Takahashi T. Yamashita H. Imamura S. Maekawa 《Journal of magnetism and magnetic materials》2002,240(1-3):100-102
The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τs becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors. 相似文献
3.
Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect. 相似文献
4.
DONG Zheng-Chao 《理论物理通讯》2004,41(1):135-140
The tunneling conductance and tunneling magnetoresistance (TMR) are
investigated in ferromagnet/insulator/ferromagnet/insulator/d-wave
superconductor (FM/I/FM/I/d-wave SC) structures by applying an extended
Blonder-Tinkham-Klapwijk (BTK) approach. We study the effects of the
exchange splitting in the FM, the magnetic impurity scattering in the thin
insulator interface of FM/I/FM, and noncollinear magnetizations in adjacent
magnetic layers on the TMR. It is shown (1) that the tunneling conductance
and TMR exhibit amplitude-varying oscillating behavior with exchange
splitting, (2) that with the presence of spin-flip scattering in insulator
interface of FM/I/FM, the TMR can be dramatically enhanced, and (3)
that the TMR depends strongly on the angle between the magnetization of two
FMs. 相似文献
5.
We investigate the equilibrium spin transport in a ferromagnet/noncentrosymmetric superconductor (FM/NCS) junction where the NCS has a dominant triplet order parameter and helical edge state. Based on the symmetry analysis and numerical calculation, we demonstrate that there is a nonzero spin supercurrent flowing in the junction, which stems from the exchange coupling between the FM magnetization and triplet Cooper-pair spin. It is also found that a transverse spin current other than the helical edge spin current is flowing along the interface of the junction, and its polarization is related to the longitudinal spin supercurrent. Besides, an equilibrium Hall current is also shown to flow along the junction’s interface due to the broken time-reversal symmetry from the FM. 相似文献
6.
By applying an extended eight-component Bogoliubov–de Gennes equation, we study theoretically the tunneling conductance in clean ferromagnet/ferromagnet/iron pnictide superconductor (FM/FM/iron-based SC) heterojunctions. Under the condition of noncollinear magnetizations, twofold novel Andreev reflections exist due to the existence of two bands in the SC, in which the incident electron and the two Andreev-reflected holes, belonging to the same spin subband, form twofold spin-triplet pairing states near the FM/iron-based SC interface. It is shown that the conversions of the conductance not only between the zero-bias peak and valley at zero energy but also between the peaks and dips at two gap energies are strongly dependent on both the interband coupling strength in the SC and the spin polarization in the FM. The qualitative differences from tunneling into a conventional s-wave SC are also presented, which may help with experimentally probing and identifying the antiphase s-wave pairing symmetry in the iron-based SC. 相似文献
7.
Spontaneous Josephson spin current in triplet superconductor/ferromagnet/triplet superconductor junctions 下载免费PDF全文
This paper theoretically studies Josephson spin current
through triplet superconductor/ferromagnet/triplet superconductor
junctions. At the ferromagnet/superconductor interfaces, the
ferromagnetic scattering potential gives rise to coupling between
the Andreev bound states and lifts their spin degeneracy. These
spin-split Andreev states carry the Josephson spin current through
the junctions. The generated spin supercurrent can be controlled by
the magnetization of a ferromagnetic thin layer and bias voltage
across the junctions. 相似文献
8.
Zhen-Gang Zhu 《Physics letters. A》2008,372(5):695-699
Selective and large polarization of current injected into semiconductor (SC) is predicted in ferromagnet (FM)/quantum dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is also revealed below Kondo temperature. It is found that Kondo resonances for up spin state are suppressed with increasing of the polarization P of the FM lead. While the down one is enhanced. The Kondo peak for up spin is disappear at P=1. 相似文献
9.
《中国物理 B》2015,(11)
Using the density functional theory and the nonequilibrium Green's function method, we studied the finite-bias quantum transport in a Cr/graphene/Cr magnetotunnel junction(MTJ) constructed by a single graphene layer sandwiched between two semi-infinite Cr(111) electrodes. We found that the tunneling magnetoresistance(TMR) ratio in this MTJ reached108%, which is close to that of a perfect spin filter. Under an external positive bias, we found that the TMR ratio remained constant at 65%, in contrast to Mg O-based MTJs, the TMR ratios of which decrease with increasing bias. These results indicate that the Cr/graphene/Cr MTJ is a promising candidate for spintronics applications. 相似文献
10.
TUNNEL MAGNETORESISTANCE IN THE FERROMAGNETIC TUNNEL JUNCTION WITH FERROMAGNETIC LAYERS OF FINITE THICKNESS SUBJECTED TO AN ELECTRIC FIELD 下载免费PDF全文
Based on the two-band model, we investigate the tunnel magnetoresistance(TMR) in ferromagnet/insulator (semiconductor)/ferromagnet(FM/I(S)/FM) tunnel junction covered on both sides by nonmagnetic metal layers subjected to an electric field. Our results show that TMR oscillates with the thickness of ferromagnetic layers owing to the quantum-size effect and can reach very large value under suitable conditions, which may in general not be reached in FM/I(S)/FM with infinitely thick ferromagnetic layer. Although the electric field causes the change of the oscillation period, phase and amplitude of the TMR, a large TMR is still obtained in some situations with the electric field. Furthermore, the electric field does not change the feature that TMR varies monotonously with the change of magnetization angle of the middle ferromagnetic layer. 相似文献
11.
12.
The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device. The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling into empty states above the Fermi level. For artificially doped barriers, the low bias TMR decreases due to defect-assisted tunneling. Yet, this mechanism becomes ineffective at large bias, where instead inelastic spin scattering causes a strong TMR decay. 相似文献
13.
Costache MV Sladkov M Watts SM van der Wal CH van Wees BJ 《Physical review letters》2006,97(21):216603
We report direct electrical detection of spin pumping, using a lateral normal-metal/ferromagnet/normal-metal device, where a single ferromagnet in ferromagnetic resonance pumps spin-polarized electrons into the normal metal, resulting in spin accumulation. The resulting backflow of spin current into the ferromagnet generates a dc voltage due to the spin-dependent conductivities of the ferromagnet. By comparing different contact materials (Al and/or Pt), we find, in agreement with theory, that the spin-related properties of the normal metal dictate the magnitude of the dc voltage. 相似文献
14.
H. B. Wang Y. K. Li Z. H. Yang J. Wang 《The European Physical Journal B - Condensed Matter and Complex Systems》2010,78(3):405-409
We report a theoretical study on the interfacial electron transport
in the ferromagnet/two-dimensional electron gas (FM/2DEG) hybrid
junction at zero bias, where the Rashba spin-orbit interaction
(RSOI) is considered in 2DEG region. It is shown that a nonzero
charge current can spontaneously flow in the interface of the
junction due to broken time reversal symmetry and spin-dependent
scattering of electron at interface. This interfacial charge current
can be modulated by system parameters such as the magnetization of
FM, RSOI strength, and interface barrier, moreover, it can be
optimized as the magnetization of FM in 2DEG plane is perpendicular
to interface whereas it can vanish as the FM magnetization is
parallel to interface. 相似文献
15.
Since the exchange bias (EB) effect was discovered in the Co/CoO core-shell nanoparticles, it has been extensively studied in various ferromagnet (FM)/antiferromagnet (AFM) bilayers due to its crucial role in spintronics devices. In this article, we review the investigation of the EB in our research group. First, we outline basic features of the EB, including the effects of the constituent layer thickness, the microstructure and magnetization of the FM layers, and we also discuss asymmetric magnetization reversal process in wedged-FM/AFM bilayers. Secondly, we discuss the mechanisms of the positive EB and the perpendicular EB. Thirdly, we demonstrate the hysteretic behavior of the angular dependence of the EB and analyze the EB training effect. Finally, we discuss the roles of the rotatable anisotropy in the two phenomena. 相似文献
16.
The influence of non-magnetic defects on the exchange bias (EB) of ferromagnet?(FM)/antiferromagnet?(AFM) core/shell nanoparticles is studied by Monte Carlo simulations. It is found that the EB can be tuned by defects in different positions. Defects at both the AFM and FM interfaces reduce the EB field while they enhance the coercive field by decreasing the effective interface coupling. However, the EB field and the coercive field show respectively a non-monotonic and a monotonic dependence on the defect concentration when the defects are located inside the AFM shell, indicating a similar microscopic mechanism to that proposed in the domain state model. These results suggest a way to optimize the EB effect for applications. 相似文献
17.
XU HuaiZhe WANG LiYing YAN QiQi ZHANG YaPing ZHANG ShiChao 《中国科学:物理学 力学 天文学(英文版)》2014,57(6):1057-1062
Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices. 相似文献
18.
Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions. 相似文献
19.
Tunneling conductance in clean ferromagnet/ ferromagnet/d-wave superconductor (F/F/d-wave S) double tunnel junctions is studied by use of four-component Bogoliubov-de Gennes equations. The novel Andreev reflection appears due to noncollinear magnetizations, in which the incident electron and the Andreev-reflected hole come from the same spin subband, resulting in spin-triplet pairing states near the F/S interface. In the highly polarized Fs case, the conductance within the energy gap exhibits a conversion from a zero-bias dip in the parallel magnetizations to a spilt zero-bias peak in the perpendicular magnetizations. 相似文献
20.
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance 总被引:1,自引:0,他引:1
Mitra C Raychaudhuri P Dörr K Müller KH Schultz L Oppeneer PM Wirth S 《Physical review letters》2003,90(1):017202
We report the magnetotransport characteristics of a trilayer ferromagnetic tunnel junction built of an electron doped manganite (La0.7Ce0.3MnO3) and a hole doped manganite (La0.7Ca0.3MnO3). At low temperatures the junction exhibits a large positive tunneling magnetoresistance (TMR), irrespective of the bias voltage. At intermediate temperatures below T(C) the sign of the TMR is dependent on the bias voltage across the junction. The magnetoresistive characteristics of the junction strongly suggest that La0.7Ce0.3MnO3 is a minority spin carrier ferromagnet with a high degree of spin polarization, i.e., a transport half-metal. 相似文献