Mechanism of the addition of nonenolizable aldehydes and ketones to (Di)metallenes (R(2)X=YR(2), X = Si,Ge Y = C,Si, Ge): a density functional and multiconfigurational perturbation theory study

The mechanism of the addition of nonenolizable aldehydes and ketones to group 14 (di)metallenes has been examined through a theoretical study of the addition of formaldehyde to Si=C, Ge=C, Si=Si, Si=Ge, and Ge=Ge bonds at the B3LYP/6-311++G(d,p) and CAS-MCQDPT2/6-31++G(d,p) levels of theory. The reaction pathways located can be grouped as either involving the formation of singlet diradical or zwitterionic intermediates or as concerted processes. Within each group of reaction pathways, several different mechanisms have been located, with not all mechanisms being available to all of the (di)metallenes. It was found that for reactions in which a Si-O bond results (i.e., addition to Si=C, Si=Si, and Si=Ge) both diradical and zwitterionic intermediates are possible; however, the formation of diradical intermediates was not found for reactions that result in the formation of a Ge-O bond (addition to Ge=C and Ge=Ge). The underlying cause of this pathway selectivity is examined, as well as the effect of solvent on the relative energies of the pathways. The results of the study shed light on the cause of experimentally obtained results regarding the mechanism of the reaction of (di)metallenes with nonenolizable ketones and aldehydes.     

Gd5-xYxTt4 (Tt = Si or Ge): effect of metal substitution on structure, bonding, and magnetism

A crystallographic study and theoretical assessment of the Gd/Y site preferences in the Gd 5- x Y x Tt 4 ( Tt = Si, Ge) series prepared by high-temperature methods is presented. All structures for the Gd 5- x Y x Si 4 system belong to the orthorhombic, Gd 5Si 4-type (space group Pnma). For the Gd 5- x Y x Ge 4 system, phases with x < 3.6 and x >or= 4.4 adopt the orthorhombic, Sm 5Ge 4-type structure. For the composition range of 3.6 相似文献   

Cleavage of silicon- and germanium-transition metal bonds. Dependences of the stereochemistry on the nature of the ligands and the geometry of complexes

The cleavages of some new optically active complexes containing CoSi (orGe), MnSi (orGe), ReGe and WGe bonds are described. Electrophiles cleave the CoSi bond with good retention of configuration at silicon, while the MnSi bond is not cleaved under the same conditions. The M′Si and M′Ge bonds (where M'  transition metal) are cleaved by nucleophiles with retention or inversion of configuration. In the case of triginal bipyramidal geometry (cobalt complexes) the stereochemical outcome of the reaction is strongly dependent upon electronic effects, the size of the ligand trans to the CoSi (orGe) bond, and the nature of the nucleophilic reagant, in accord with the general rules for nucleophilic substitution at silicon. In contrast the transition metalsilicon orgermanium bonds in the octahedral complexes of manganese, rhenium and tungsten are always cleaved with poor retention of configuration regardless of the nature of the ligands or the nucleophilic reagent. The results provide the first cases in which the stereochemistry of nucleophilic displacement at silicon is independent of the electronic features of both the leaving group and the nucleophile.     

Theoretical study of the structural and electronic properties of SimGen and SimGen- (s = m + n <or= 7) clusters

Ground-state structures, vibrational frequencies, HOMO-LUMO energy gap, electron affinities, and cluster mixing energy of binary semiconductor clusters SimGen in the range s = m + n 相似文献   

Synthesis, characterization, and growth rates of aluminum- and Ge,Al-substituted silicalite-1 materials grown from clear solutions

The synthesis, characterization, and growth rates of aluminum- and germanium,aluminum-substituted silicalite-1 (Al-silicalite-1, Ge,Al-silicalite-1) materials grown from clear solutions are reported. In the case of aluminum substitution, the crystallinity of the materials as determined by powder X-ray diffraction (PXRD) decreases with increasing aluminum content, as does the micropore volume determined by nitrogen adsorption and the growth rate determined by in situ small-angle X-ray scattering (SAXS). The final materials possess slightly lower Si/Al ratios than the initial synthesis mixtures based on X-ray fluorescence analysis. In the case of simultaneous incorporation of germanium and aluminum, the final materials have a slightly lower Si/Al ratio than the synthesis mixture but a much higher Si/Ge ratio, indicating the aluminum is more readily incorporated in the zeolite as compared to germanium. This result is consistent with studies of individual heteroatom substitution behavior. Germanium incorporation in the final material increases at higher heteroatom contents (Si/(Ge+Al) = 50 and 25). The promoting effect of germanium on the growth rate of silicalite-1 dominates at low heteroatom content (Si/(Ge+Al) = 100), leading to enhanced zeolite growth rates as compared to pure silicalite-1. This promoting effect is insensitive to the Ge/Al ratio at a Si/(Ge+Al) = 100. The influence of aluminum on the growth rate, as well as the crystallinity of final materials, becomes observable when the heteroatom content is increased (Si/(Ge+Al) = 50 and 25). This is the first study we are aware of that reports the synthesis of Ge,Al-substituted silicalite-1 phases formed in hydroxide media or from clear solutions and has implications for the synthesis of nanoparticulate zeolitic materials for catalysis.     

Ge弥散莫来石复合材料的制备及其光致发光性能

以硝酸铝、正硅酸乙酯(TEOS)和3-三氯锗丙酸为原料, 通过溶胶-凝胶法合成了Al12Si3.75Ge0.25O26莫来石固溶体粉体, 并利用热重-差热分析(TG-DSC)、X射线衍射(XRD)、红外光谱(FT-IR)等技术对陶瓷粉体的形成过程进行了表征. 对其进行还原处理并对产物的光致发光性能进行了研究, 观察到发光峰位于565、613、682、731和777 nm的室温光致发光现象. 比较不同还原温度下制备的样品, 结果发现500 益还原样品的发光强度最强. 通过晶格常数计算并结合XPS研究表明, 在500 ℃还原时已有Ge4+从基体中被还原为Ge0粒子. 拉曼光谱显示, 500 益还原样品中, Ge0主要是以平均粒径约为1.95 nm的团簇形式存在.     

DFT characterization of nanostructured germanium surfaces induced by cobalt atoms

By deposition in ultra‐high vacuum of cobalt on a Ge(111)–c(2 × 8) surface, Mocking et al. obtained a surface reconstruction. In the present paper, we analyse the related atomic structure, proposed by these authors, by means of density functional theory calculations. The surface presents ordered clusters that consist of six Ge atoms arranged in a triangle, lying above three Co atoms. The latter are located at substitutional positions within the top plane of the Ge(111) first bilayer. These clusters are similar to what is obtained on part of the Co‐induced Si(111) surface. For this surface, the clusters are terminated either by six Si atoms or by one, two or three adatoms above the six Si atoms. As the Co–Ge clusters systematically display six protrusions in the scanning tunnelling microscopy measurements by Mocking et al., we investigated why Ge adatoms are not present. Comparison of the Gibbs energy, interatomic distances, as well as charge density indicates that Ge adatoms on top of Co‐Ge clusters are less stable than Si adatoms in the Co‐Si system. Copyright © 2013 John Wiley & Sons, Ltd.     

Electrodeposition of Ge, Si and Si x Ge 1-x from an air- and water-stable ionic liquid

The electrodeposition of Ge, Si and, for the first time, of Si(x)Ge(1-x) from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py(1,4)]Tf(2)N) containing GeCl(4) and/or SiCl(4) as precursors is investigated by cyclic voltammetry and high-resolution scanning electron microscopy. GeCl(2) in [Py(1,4)]Tf(2)N is electrochemically prepared in a two-compartment cell to be used as Ge precursor instead of GeCl(4) in order to avoid the chemical attack of Ge(iv) on deposited Ge. Silicon, germanium and Si(x)Ge(1-x) can be deposited reproducibly and easily in this ionic liquid. Interestingly, the Si(x)Ge(1-x) deposit showed a strong colour change (from red to blue) at room temperature during electrodeposition, which is likely to be due to a quantum size effect. The observed colours are indicative of band gaps between at least 1.5 and 3.2 eV. The potential of ionic liquids in Si(x)Ge(1-x) electrodeposition is demonstrated.     

Ylenes in the M(II)→Si(IV) (M=Si, Ge, Sn) coordination mode

The reaction of the methimazolyl (mt, i.e., 2-mercapto-1-methylimidazolide) substituted silane Si(mt)(4) with SnCl(2) and GeCl(2) in dioxane affords the paddlewheel-shaped complexes [ClSi(μ-mt)(4)MCl] (M=Sn (1) and Ge (2), respectively). These compounds represent the first crystallographically characterized hexacoordinate silicon complexes comprising a Sn or Ge atom in the Si coordination sphere. An attempt to synthesize the related silicon compound 3 [ClSi(μ-mt)(4)SiCl] instead afforded the trisilane [ClSi(μ-mt)(4)Si-SiCl(3)] (3a), which provides the first crystallographic evidence for the feasibility of oligosilanes with adjacent hexacoordinate Si atoms. One of the hexacoordinate Si atoms of 3a features the unprecedented (Si(2)S(4))Si skeleton. Natural bonding orbital (NBO) analyses of compounds 1, 2, 3a (and the target compound 3) revealed characteristics of M(II)→Si(IV) (for 2 and 3) or M(I)→Si(IV) (for 3a) dative bonding in the systems with M=Si and Ge, whereas compound 1 exhibits a covalent Sn(III)-Si(III) bond.     

Optimizing Cs-exchange in titanosilicate with the mineral pharmacosiderite topology: framework substitution of Nb and Ge

Titanosilicates with complete or partial substitution of Ge or Nb in the framework and having the mineral pharmacosiderite topology were hydrothermally prepared and their ion-exchange properties towards Cs were studied for Ti/Ge/Si, Ti/Si, Nb/Ti/Si and pure Ge phases. The basis for the differences in the ion exchange properties measured as distribution coefficients (K_d) for these materials are detailed via structural characterization using the Rietveld refinement technique on the X-ray powder diffraction data. The differences in affinity towards Cs⁺ result either from the degree of hydration of the exchanger resulting in different coordination environments or the position of cesium ion in the eight-ring channel.     

Computational study of 19F NMR spectra of double four ring-containing Si/Ge-zeolites.

(19)F NMR chemical shifts are calculated in order to study the F(-) environment in double four ring (D4R) containing Si/Ge-zeolites. The calculations with the DFT/CSGT/B3PW91 methodology yielded an agreement within 2 ppm with respect to the experimental peaks corresponding to the D4R units containing 8Si0Ge, 7Si1Ge and 0Si8Ge of the octadecasil zeolite. The optimisation of the 7Si1Ge-, 6Si2Ge-, 5Si3Ge- and 4Si4Ge-D4R units with DFT/B3LYP methodology shows that a covalent Ge-F bond is formed and therefore a Ge atom in the D4R is pentacoordinated. The displacement of the fluoride ion towards a Ge atom in the Ge-containing D4R units locates four Si/Ge atoms in the close vicinity of the F(-) and this makes possible a rationalization of the (19)F NMR signals in groups according to the number of Si (n) and Ge (m) atoms in the nearest F(-) environment, F-Si(n)Ge(m) (where n+m=4). Thus, the calculated chemical shifts show that higher values are observed when the number of Ge atoms in the nearest F(-) environment increases.     

Ab initio Study on Formation Mechanism of Spiro-Si-Heterocyclic Ring Compound Involving Ge from H2Ge=Si: and Formaldehyde

H₂Ge=Si: and its derivatives (X₂Ge=Si:, X=H, Me, F, Cl, Br, Ph, Ar,…) are new species. Its cycloaddition reactions are new area for the study of silylene chemistry. The cycloaddition reaction mechanism of singlet H₂Ge=Si: and formaldehyde has been investigated with the MP2/aug-cc-pVDZ method. From the potential energy profile, it could be predicted that the reaction has one dominant reaction pathway. The reaction rule is that two reactants firstly form a four-membered Ge-heterocyclic ring silylene through the [2+2] cycloaddition reaction. Because of the 3p unoccupied orbital of Si: atom in the four-membered Ge-heterocyclic ring silylene and the π orbital of formaldehyde forming a π→p donor-acceptor bond, the four-membered Ge-heterocyclic ring silylene further combines with formaldehyde to form an intermediate. Because the Si: atom in the intermediate undergoes sp³ hybridization after transition state, then the intermediate isomerizes to a spiro-Si-heterocyclic ring compound involving Ge via a transition state. The result indicates the laws of cycloaddition reaction between H₂Ge=Si: or its derivatives (X₂Ge=Si:, X=H, Me, F, Cl, Br, Ph, Ar,…) and asymmetric π-bonded compounds are significant for the synthesis of small-ring involving Si and Ge and spiro-Si-heterocyclic ring compounds involving Ge.     

硅苯和锗苯与2,3-二甲基丁二烯杂Diels-Alder反应的理论研究

采用密度泛函理论(DFT)方法在B3LYP/6-311G(d,p)水平上研究了硅苯和锗苯与2,3-二甲基丁二烯的两类杂Diels-Alder反应的微观机理、势能剖面、取代基效应和溶剂效应.计算结果表明,所研究反应均以协同非同步的方式进行,且C—Si或C—Ge键总是先于C—C键形成.在硅苯或锗苯分子作为杂亲二烯体的[2+4]反应中,endo进攻方式的非同步性比exo进攻稍大一些,而后者比前者一般要稍稍有利一些.在硅苯或锗苯分子作为杂二烯烃的[4+2]反应中,反应非同步性的大小与产物中不对称的亲二烯体上的取代基与硅或锗原子之间的相对位置有关,且在动力学上总是非同步性较大的反应更容易进行一些.硅或锗原子上的CCl3或NH2取代基在热力学和动力学上一般有利于反应的进行,而C(CH3)3取代基的影响则相反.[2+4]反应在热力学和动力学上均远比相应的[4+2]反应容易进行,这与实验完全一致.苯和甲醇溶剂对所研究反应的势能剖面影响较小.     

The pristine and carbon,silicon or germanium-substituted (10, 0) BN nanotube: A computational DFT study of NMR parameters

The geometrical structure and nuclear magnetic resonance (NMR) parameters of the pristine as well as carbon, silicon and germanium-doped (10, 0) boron-nitride (BN) nanotubes have been studied using a DFT-B3LYP method for the first time. When either a Ge, C or Si atom is substituted for a single B or N in the BN nanotube, the dopant atom extends outward from the surface of the nanotube. Our results show that Ge extends more from the surface than C or Si. It was found that the NMR parameters are significantly changed for those B and N nuclei that bond directly to C, Si or a Ge dopant. The calculations were carried out using the Gaussian 03 software package.     

Reactions of organochlorosilanes with chloro-and organogermanes in the presence of aluminum chloride

The effect of substituents at the silicon and germanium atoms in reactions of organochlorosilanes with chloro-and organogermanes in the presence of aluminum chloride was studied. The only occurring process is the exchange of the chlorine atoms at Ge for the phenyl groups from Si; an increase in the number of methyl groups or chlorine atoms at Si promotes formation of phenyltrichlorogermane, and an increase in the number of phenyl groups or replacement of the chlorine atom at the Si atom by hydrogen leads to the formation of di-and triphenylchlorogermanes. Neither phenyl nor other radicals are transferred back from Ge to Si in the course of reactions of phenylgermanes with methylchlorosilanes in the presence of aluminum chloride; the only occurring processes are the exchange of the phenyl or methyl radicals bonded to Ge for the Cl atom bonded to Al and the disproportionation of phenylchlorogermanes.     

Materials based on group IVA elements for alloying-type sodium storage

There are five elements in group IVA of the periodic table, i.e., carbon (C), silicon (Si), germanium (Ge), tin (Sn) and lead (Pb), of which Si, Ge, and Sn can be used as alloying-type electrode materials for sodium-ion batteries. Pb is also capable of alloying with sodium, but it is generally ruled out as the cause of toxicity. In recent years, materials based on Si, Ge, and Sn have been intensively exploited as sodium anodes because of their abundant resource and large capacity with reasonable working voltages. However, successful deployment of these anode materials needs to overcome kinetic and thermodynamic issues related to poor electrochemical activity, particle pulverization associated with large volume swelling, and formation of unstable solid-electrolyte interphase. A diversity of material strategies has been employed to address these difficulties, mainly leveraging on the knowledge recently advanced for lithium anodes. This review highlights such issues and provides valuable insights for possible solutions, which serves as a guide and inspiration for future material innovation for rechargeable batteries.     

Experimental and theoretical investigation on binary semiconductor clusters of Bi/Si, Bi/Ge, and Bi/Sn

Bi(m)M(n)- (M = Si, Ge, Sn) binary cluster anions are generated by using laser ablation on mixtures of Bi and M (M = Si, Ge, Sn) samples and studied by reflectron time-of-flight mass spectrometer (RTOF-MS) in the gas phase. Some magic number clusters are present in the mass spectra which indicate that they are in stable structures. For small anions (m + n < or = 6), their structures are investigated with the DFT method and the energetically lowest lying structures are obtained. For the binary anionic clusters with the same composition containing Si, Ge, and Sn, they share similar geometric and electronic structure in the small size except that BiSi3-, BiSi5-, Bi2Si2-, Bi2Si3-, and Bi4Sn2- are different for the lowest energetic structures, and the ground states for all the anions are in their lowest spin states. The calculated VDE (vertical detachment energy) and binding energy confirm the obviously magic number cluster of BiM4- (M = Si, Ge, Sn), which agrees with the experimental results.     

Neue Suboxid-Cluster [O5Ba18] in den Kristallstrukturen von Ba21M2O5 (M = Si,Ge)

Novel Suboxide Clusters [O₅Ba₁₈] in the Crystal Structures of Ba₂₁M₂O₅ (M = Si, Ge) The compounds Ba₂₁M₂O₅ (M = Si, Ge) crystallize in the cubic system with space group Fd3m, lattice constants 2 038.3(10) pm (Si), 2 039.8(9) pm (Ge) resp. and Z = 8. The crystal structure contains isolated Si/Ge atoms coordinated by barium atoms in an icosahedral arrangement. The oxygen atoms are situated in the centers of barium octahedra, four of which share common faces with an additional central octahedron. The novel clusters [O₅Ba₁₈] in principal are related to those in the crystal structures of the binary Cs/Rb suboxides.     

Der Übergang vom „geordneten”︁ Anti-PbCl2-Gitter zum Anti-PbFCl-Gitter: Ternäre Phasen ABX der Erdalkalimetalle mit Elementen der 4. Hauptgruppe (A = Ca,Sr, Ba; B = Mg; X = Si,Ge, Sn,Pb)

The transition of the “ordered” anti-PbCl₂ lattice in the anti-PbFCl lattice: The ternary phases ABX of the alkaline earths with main group IV elements (A = Ca, Sr, Ba; B = Mg; X = Si, Ge, Sn, Pb) The compounds CaMgX, SrMgX and BaMgX (X = Si, Ge, Sn, Pb) were synthesized and their structures determined. CaMgX and SrMgX crystallize in the “ordered” Anti-PbCl₂-type and are therefore related to the binary compounds Ca₂X(X = Si, Ge, Sn, Pb), which form the Anti-PbCl₂-type too. The phases BaMgX build up the Anti-PbFCl-structure. The relations of these two different structures are discussed in respect to the radii of the components.     

Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si_52.4Ge_47.6) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.