Effect of the atomic composition of the surface on the electron surface states in topological insulators A<Stack><Subscript>2</Subscript><Superscript>V</Superscript></Stack>B<Stack><Subscript>3</Subscript><Superscript>VI</Superscript></Stack>

The results of the theoretical investigation of the surface electronic structure of A₂^VB₃^VI compounds containing topologically protected surface states are reported. The ideal Bi₂Te₃, Bi₂Se₃, and Sb₂Te₃ surfaces and surfaces with an absent external layer of chalcogen atoms, which were observed experimentally as monolayer terraces, have been considered. It has been shown that the discrepancy between the calculated Fermi level and the value measured in the photoemission experiments can be attributed to the presence of the “dangling bond” states on the surface of the terraces formed by semimetal atoms. The fraction of such terraces on the surface has been estimated.     

Ab initio study of 2DEG at the surface of topological insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>

By means of ab initio DFT calculation, we analyze the mechanism that drives the formation and evolution of the 2D electron gas (2DEG) states at the surface of Bi₂Te₃ topological insulator (TI). As it has been proved earlier it is due to an expansion of the van der Waals (vdW) spacing produced by intercalation of adsorbates. We will show that the effect of this expansion, in this particular surface, leads to several intriguing phenomena. On one hand we observe a different dispersion of the Dirac cone with respect to the ideal surface and the formation of Parabolic Bands (PB) below the conduction band and M-shaped bands in the valence band, the latters have been observed recently in photoemission experiments. On the other hand the expansion of the vdW gaps changes the symmetry of the orbitals forming the Dirac cone and therefore producing modifications in the local spin texture. The localization of these new 2DEG-states and the relocalization of the Dirac cone will be studied as well.     

Mass-selected Ag<Subscript>3</Subscript> clusters soft-landed onto MgO/Mo(100): femtosecond photoemission and first-principles simulations

The electronic structure of supported mass-selected Ag₃ clusters is analyzed by joint femtosecond photoemission spectroscopy and ab initio theoretical investigations. A wide band gap insulating magnesia ultra-thin film on Mo(100) has been chosen as substrate in order to minimize the electronic interaction between metal clusters and support. After magnesia ultra-thin film preparation no photoemission from the molybdenum substrate is observed anymore, instead very weak two photon photoemission is detected possibly originating from surface or subsurface oxide defect states. Soft-landing deposition of 2 of atomic monolayer equivalents of Ag₃ clusters results in the disappearance also of the MgO two photon photoemission signal, while a strong single photon photoemission signal is detected from states located directly below the Fermi level. The theoretical study of structural, electronic and optical properties of Ag₃ at two model sites of MgO (100), the stoichiometric MgO(100) and an F_S-center defect, based on the DFT method and the embedded cluster model provides insight into the interactions between the cluster and the support which are responsible for the characteristic spectroscopic features.     

Geometries and electronic structures of Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript>, Ga<Subscript>3</Subscript>Se<Subscript>2</Subscript> and their anions. Theoretical insights

We hereby report a theoretical study on the equilibrium geometries, electronic structures and harmonic vibrational frequencies of Ga₂Se₃, Ga₃Se₂ and their anions. The ground and low-lying excited states of Ga₂Se₃⁻, Ga₂Se₃, Ga₃Se₂⁻ and Ga₃Se₂ are studied at the B3LYP and/or MP2 and CCSD(T) levels in conjunction with 6-311+G(d) and 6-311+G(2df) one particle basis sets. Ga₂Se₂⁻ adopts the C_2v kite geometry while Ga₂Se₃ has a ‘V’ geometry. Ga₃Se₂⁻ has a three-dimensional ‘D_3h ’ geometry and Ga₃Se₂ prefers the three-dimensional ‘C_2v ’ structure. Electron detachment energies from the ground electronic states of the anions to several neutral states are reported and discussed. At CCSD(T)//MP2 level, the adiabatic electron affinity (AEA) of Ga₂Se₃ is calculated to be 3.23 eV when using the 6-311+G(2df) basis set and that of Ga₃Se₂ is 2.77 eV with the 6-311+G(d) basis set. The findings of this research are analyzed and compared with gallium oxide and sulfide analogues.     

Specific features of the electronic,spin, and atomic structures of a topological insulator Bi<Subscript>2</Subscript>Te<Subscript>2.4</Subscript>Se<Subscript>0.6</Subscript>

The specific features of the electronic and spin structures of a triple topological insulator Bi₂Te_2.4Se_0.6, which is characterized by high-efficiency thermoelectric properties, have been studied with the use of angular- and spin-resolved photoelectron spectroscopy and compared with theoretical calculations in the framework of the density functional theory. It has been shown that the Fermi level for Bi₂Te_2.4Se_0.6 falls outside the band gap and traverses the topological surface state (the Dirac cone). Theoretical calculations of the electronic structure of the surface have demonstrated that the character of distribution of Se atoms on the Te–Se sublattice practically does not influence the dispersion of the surface topological electronic state. The spin structure of this state is characterized by helical spin polarization. Analysis of the Bi₂Te_2.4Se_0.6 surface by scanning tunnel microscopy has revealed atomic smoothness of the surface of a sample cleaved in an ultrahigh vacuum, with a lattice constant of ~4.23 Å. Stability of the Dirac cone of the Bi₂Te_2.4Se_0.6 compound to deposition of a Pt monolayer on the surface is shown.     

Dependence of the Er<Subscript>2</Subscript>O<Subscript>3</Subscript> selective emission on the intensity of laser thermal excitation

The dependence of the selective emission (SE) spectra of erbium oxide (Er₂O₃) in the visible and near-IR spectral ranges on the laser excitation intensity at a wavelength of 10.6 μ m is experimentally studied. The intensity ratio for the Er³⁺ electronic and vibronic transitions in the SE spectra is varied with an increase in the laser intensity to 10 kW/cm². The mechanism for the multiphonon fluctuation excitation of electronic states and a possibility for the SE application in the observation of the thermo-photo-laser effect are discussed.     

Specific features of the electronic structure of the CeCu<Subscript>6</Subscript>, CePd<Subscript>3</Subscript>, CeSi<Subscript>2</Subscript>, and CeF<Subscript>3</Subscript> systems

The electronic structure of cerium systems, the hybridization of 4 f and outer-shell electrons, and the influence of the position of the localized 4 f level with respect to the Fermi level E _F in the conduction band have been investigated. The CeCu₆, CePd₃, CeSi₂, and CeF₃ systems have been studied using X-ray photoelectron spectroscopy. The densities of states have been calculated by the tight-binding linearized muffin-tin orbital method within the atomic sphere approximation, which takes into account the covalent character of bonds and the nonspherical distribution of the electron density. The results obtained from the calculations of the total density of states are in good agreement with the valence band X-ray photoelectron data for the systems under investigation. It has been shown that the differences in the properties of the cerium systems are determined by the specific features of their electronic structure. A strong interatomic interaction is characteristic of heavy-fermion systems.     

Identifying Two-Dimensional <Emphasis Type="Italic">Z</Emphasis><Subscript>2</Subscript> Antiferromagnetic Topological Insulators

We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate Néel antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z₂ topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.     

Electronic structure of Ti-doped Sr<Subscript>4</Subscript>Sc<Subscript>2</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript>O<Subscript>6</Subscript> as a possible parent phase for the new FeAs superconductors

First principle FLAPW-GGA calculations have been performed with the purpose to understand the effect of Ti-doping on the electronic properties for the newly discovered tetragonal iron arsenide-oxide Sr₄Sc₂Fe₂As₂O₆ (abbreviated as FeAs42226) as the possible parent phase for the new FeAs superconductors. Our results show that the insertion of Ti into Sc sublattice of this five-component iron arsenide-oxide phase leads to the resolute change of electronic structure of FeAs42226. Namely, the insulating oxygen-containing [Sr₄Sc₂O₆] blocks in Ti-doped FeAs42226 became conducting, and this differs essentially from the known picture for all others FeAs superconductors where the conducting [Fe₂As₂] blocks are alternated with insulating blocks. Moreover in sharp contrast with FeAs-based superconductors with Fe 3d bands near the Fermi level, for Ti-doped FeAs42226 in this region the Ti 3d states are dominated, whereas the Fe 3d states are suppressed.     

Density functional study of Pu<Subscript>2</Subscript>C<Subscript>3</Subscript>

The structural, magnetic, electronic, vibrational, thermodynamic and elastic properties of plutonium sesquicarbide (Pu₂C₃) are investigated based on density functional theory. The use of the Hubbard term to describe the 5f electrons of plutonium is discussed according the lattice parameters and magnetism. The calculated lattice constants, magnetism and density of states agree well with the experimental data or other theoretical calculations. The Pu-C bonds of Pu₂C₃ have a mixture of covalent character and ionic character, while covalent character is stronger than ionic character. The phonon frequencies and the assignment of infrared-active, Raman-active and silent modes at Γ point are obtained. Furthermore, the enthalpy difference H-H₂₉₈, entropy S, heat capacity and linear thermal expansion coefficient α of Pu₂C₃ have been calculated and compared with the available data. Lastly, the calculated elastic properties predict that Pu₂C₃ is ductile metal. In addition, the effect of spin-orbit coupling on the structural, magnetic, and electronic properties of Pu₂C₃ has been discussed. We hope that our results can provide a useful reference for further theoretical and experimental research on Pu₂C₃.     

X-ray emission study of the electronic structure of nanocrystalline Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

Valence states of metal ions and the phase composition of nanocrystalline Al₂O₃ (of the original oxide and the oxide irradiated by high-energy Fe⁺ ions) are studied by using x-ray emission Al L_{2, 3} and O Kα spectra. It is established that the shape of the Al L_{2, 3} spectra strongly changes as one goes from the original (bulk) Al₂O₃ to nanocrystalline oxide, while the O Kα spectra remain practically unchanged. Moreover, irradiation by high-energy Fe⁺ ions results in slight additional changes in the x-ray spectral characteristics of the aluminum oxides under study. The obtained experimental data are compared with the results of theoretical calculations of the electronic structure of α and γ phases of Al₂O₃ performed using the LDA formalism. Using the results of x-ray spectral studies, electronic structure calculations, and x-ray diffraction analysis, it is shown that the revealed spectral differences between the nanocrystalline state of aluminum oxide and the bulk material can be interpreted as a phase transition from the α phase to the γ phase of Al₂O₃ with an addition of bayerite.     

Excitons and energy transfer in KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript> and RbPb<Subscript>2</Subscript>Br<Subscript>5</Subscript> laser crystals

Excitonic states, radiative relaxation of electronic excitations, and energy transfer to luminescence centers in both undoped and rare-earth activated (Pr, Er, Nd, Ho, Tb, Tm) KPb₂Cl₅ and RbPb₂Br₅ crystals were studied using low-temperature (8 K) time-resolved VUV spectroscopy under selective photoexcitation by synchrotron radiation.     

<Superscript>77</Superscript>Se Low-Temperature NMR in the Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> Single Crystalline Topological Insulator

⁷⁷Se nuclear magnetic resonance (NMR) measurements in the Bi₂Se₃ topological insulator single crystal were carried out at temperatures 15.8, 88, and 293 K. Bismuth selenide single crystalline plate was studied in the orientation when the crystallographic c-axis was parallel to the external magnetic field B₀. We observed two component NMR spectra at the three temperatures. It was shown that the NMR spectrum almost did not move with decreasing temperature and the density of charge carriers did not follow the thermal activation law.     

First-principle calculations for electronic structure and bonding properties in layered Na<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>7</Subscript>

First-principles calculations of Na₂Ti₃O₇ have been carried out with density-functional theory (DFT) and ultrasoft pseudopotentials. The electronic structure and bonding properties in layered Na₂Ti₃O₇ have been studied through calculating band structure, density of states, electron density, electron density difference and Mulliken bond populations. The calculated results reveal that Na₂Ti₃O₇ is a semiconductor with an indirect gap and exhibits both ionic and covalent characters. The stability of the (Ti₃O₇)²⁻ layers is attributed to the covalent bonding of strong interactions between O 2p and Ti 3d orbitals. Furthermore, the O atoms located in the innerlayers interact more strongly with the neighboring Ti atoms than those in the interlayer regions. The ion-exchange property is due to the ionic bonding between the Na⁺ and (Ti₃O₇)²⁻ layers, which can stabilize the interlayers of layered Na₂Ti₃O₇ structure.     

Electronic structure,topological phase transitions and superconductivity in (K,Cs)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript>2</Subscript>Se<Subscript>2</Subscript>

We present LDA band structure of novel hole doped high temperature superconductors (T _c ∼ 30 K) K _x Fe₂Se₂ and Cs _x Fe₂Se₂ and compare it with previously studied electronic structure of isostructural FeAs superconductor BaFe₂As₂ (Ba122). We show that stoichiometric KFe₂Se₂ and CsFe₂Se₂ have rather different Fermi surfaces as compared with Ba122. However at about 60% of hole doping Fermi surfaces of novel materials closely resemble those of Ba122. In between these dopings we observe a number of topological Fermi surface transitions near the Γ point in the Brillouin zone. Superconducting transition temperature T _c of new systems is apparently governed by the value of the total density of states (DOS) at the Fermi level.     

Models of spin structures in Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript>

The mean-field method is used to calculate the bands, Fermi surfaces, and spin susceptibilities of a three-band model of the RuO₄ plane of Sr₂RuO₄ rutinate for states with different spin structures. In particular, the spiral state is studied with the “incommensurate” vector Q=2π(1/3, 1/3) corresponding to the nesting of bands with the population n=4. This state proves to be the lowest with respect to energy among other (paramagnetic, ferromagnetic, antiferromagnetic, and periodic) solutions. In the spiral state, in addition to the main α, β, and γ sheets of the Fermi surface, shadow Fermi boundaries along the Γ(0, 0)-M(π, 0) line (previously observed in the ARPES experiments) are revealed and explained. This may change the interpretation of the data on dispersionless peaks in photoemission, previously ascribed to surface states. The spin susceptibilities of the spiral state exhibit peaks in the dependence Im?(q, ω) at q=Q in accordance with the observed magnetic peak in neutron scattering. The hypothesis of the presence of spin structures with q=Q in the normal state of Sr₂RuO₄ and the methods of checking this hypothesis are discussed.     

Influence of magnetic ordering on electronic structure of Tb<Superscript>3+</Superscript> ion in TbFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal

Optical absorption spectra of trigonal crystal TbFe₃(BO₃)₄ have been studied in the region of ⁷F₆ → ⁵D₄ transition in Tb³⁺ ion depending on temperature (2–220 K) and on magnetic field (0–60 kOe). Splitting of the Tb³⁺ excited states, both under the influence of the external magnetic field and effective exchange field of the Fe-sublattice, have been determined. Landé factors of the excited states have been found. Stepwise splitting of one of the absorption lines has been discovered in the region of the Fe-sublattice magnetic ordering temperature. This is shown to be due to the abrupt change of equilibrium geometry of the local Tb³⁺ ion environment only in the excited state of the Tb³⁺ ion. In general, the magnetic ordering is accompanied by temperature variations of the Tb³⁺ local environment in the excited states. The crystal field splitting components have been identified. In particular, it has been shown that the ground state (in D ₃ symmetry approximation) consists of two close singlet states of A ₁ and A ₂ type, which are split and magnetized by effective exchange field of the Fe-sublattice. Orientations of magnetic moments of the excited electronic states relative to that of the ground state have been experimentally determined in the magnetically ordered state of the crystal. A pronounced shift of one of absorption lines has been observed in the vicinity of the TbFe₃(BO₃)₄ structural phase transition. The temperature interval of coexistence of the phases is about 3 K.     

An Ellipsometric Investigation of the Optical Properties of Ru<Subscript>2</Subscript>Ge<Subscript>3</Subscript> and Ru<Subscript>2</Subscript>Sn<Subscript>3</Subscript> Compounds

Ellipsometric investigations of the optical properties of Ru₂Ge₃ and Ru₂Sn₃ intermetallic compounds are carried out in the wavelength range from 0.22 to 15 μm. The nature of interband light absorption is analyzed based on a comparative analysis of the experimental and theoretical frequency dependences of an optical conductivity. The obtained results confirm the existence of energy gaps at the Fermi level in the electronic spectra of these materials predicted earlier by the band-structure calculations.     

Effect of deformation on the electronic structure and topological properties of the A<Superscript>II</Superscript>Mg<Subscript>2</Subscript>Bi<Subscript>2</Subscript> (A<Superscript>II</Superscript> = Mg,Ca,Sr,Ba) compounds

The electronic structure and topological properties of the A^IIMg₂Bi₂ (A^II = Mg,Ca,Sr,Ba) compounds are theoretically studied with the use of exact exchange. It is found that the Mg₃Bi₂ compound in the equilibrium state is a semimetal, whereas three other compounds are semiconductors with a direct fundamental band gap. It is predicted that the uniaxial deformation of three-component compounds results in transitions to topologically nontrivial phases: topological insulator and topological and Dirac semimetals. Owing to such a rich variety of topologically nontrivial phases, these compounds may be of interest for further theoretical and experimental studies.     

Features of the electronic spectrum and optical absorption of ultrathin Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> films

The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi₂Se₃ topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”), which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.