The trace identity and the planar Casimir effect

The familiar trace identity associated with the scale transformationx ^Μ → x′ ^Μ = e^-λ x ^Μ on the Lagrangian density for a noninteracting massive real scalar field in 2 + 1 dimensions is shown to be violated on a single plate on which the Dirichlet boundary condition Φ(t, x¹, x² = -a) = 0 is imposed. It is however respected in: (i) 1 + 1 dimensions in both free space and on a single plate on which the Dirichlet boundary condition Φ(t, x¹ = -a) = 0 holds and (ii) in 2 + 1 dimensions in free space, i.e. the unconstrained configuration. On the plate where Φ(t, x¹, x² = -a) = 0, the modified trace identity is shown to be anomalous with a numerical coefficient for the anomalous term equal to the canonical scale dimension, viz. 1/2. The technique of Bordaget al [Ann. Phys. (N.Y.),165, 162 (1985)] is used to incorporate the said boundary condition into the generating functional for the connected Green’s functions.     

Tailoring the optical properties of MgxZn1?xO thin films by nitrogen doping

Thin films of Mg _x Zn_1−x O and Mg _x Zn_1−x O doped with nitrogen were deposited by Radio Frequency plasma beam assisted Pulsed Laser Deposition (RF-PLD) in oxygen or oxygen-nitrogen discharge with different nitrogen/oxygen ratios. A Nd:YAG laser working at a wavelength of 266 nm, having a 10 Hz repetition rate was used for the depositions. The energy density of the incident beam was 3 J/cm² and the RF power was set to 100 W for all the samples. X-ray Diffraction (XRD) and Spectroscopic Ellipsometry (SE) were employed to investigate the samples. The degree of crystallinity is fount to decrease with increasing the Mg concentration, while the solubility of Mg in ZnO increases by 30% in the N-doped Mg _x Zn_1−x O thin films grown by RF-PLD. Segregation of MgO phase at a Mg concentration of 30% for Mg _x Zn_1−x O thin film is detected both by XRD and SE. The band gap of the samples increases from 3.37 up to 3.57 eV with increasing the Mg concentration and the nitrogen/oxygen ratio for each Mg concentration. A dependence of the dielectric function (refractive index) on both stoichiometry and degree of crystalinity is also found, the refractive index having values between 1.7 and 2 in visible spectral range.     

Enhanced polarization and magnetoelectric response in Tb1−x Ho x MnO3

A series of manganites Tb_1−x Ho _x MnO₃ (0≤x≤0.6) with orthorhombic structure are synthesized and detailed investigations on their multiferroicity are performed. Successive magnetic transitions upon temperature variation are evidenced for all the samples, and both the Mn³⁺spiral spin ordering and rare-earth spin ordering are suppressed with increasing x. A significant enhancement of both the polarization and magnetoelectric response within 0.2<x<0.4 is observed, which may probably result from the shortening of the spiral-spin-ordering period, due to the competition between the spiral spin order and E-type antiferromagnetic order. This argument is supported by further theoretical calculations based on the two e _g -orbital double-exchange model.     

Studies on electrical switching behavior and optical band gap of amorphous Ge–Te–Sn thin films

Amorphous thin film Ge₁₅Te_85−x Sn _x (1≤x≤5) and Ge₁₇Te_83−x Sn _x (1≤x≤4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge₁₅Te_85−x Sn _x and Ge₁₇Te_83−x Sn _x amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge₁₅Te_85−x Sn _x and Ge₁₇Te_83−x Sn _x thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.     

The exponent λ (x, Q2) of the proton structure functionF2(x, Q2) at lowx

The exponent λ of the structure function F₂ ∼x ^−λ is calculated using the solution of the DGLAP equation for gluon at lowx reported recently by the present authors. The quantity λ is calculated both as a function ofx at fixedQ ² and as a function ofQ ² at fixedx and compared with the most recent data from H1     

Correlation between subband population and threshold current densities in GaAs/(Al,Ga)As quantum-cascade structures/lasers with different barrier heights

The laser parameters such as threshold current density and characteristic temperature of GaAs/Al_xGa_1-xAs quantum-cascade lasers (QCLs) with x=0.45 are superior compared to QCLs with x=0.33. This improvement is usually attributed to smaller leakage currents due to the higher conduction band offset for x=0.45, since the QCLs for the two barrier compositions are designed in such a way that the population ratios ρ_p for the laser levels are the same. The experimental investigation of undoped GaAs/Al_xGa_1-xAs quantum-cascade structures reveals a significantly smaller value of ρ_p for x=0.33 than the calculated one, while for x=0.45 it agrees with it. In the framework of a linear rate equation model, we estimate the effect of the experimentally observed reduction of ρ_p on the threshold current density. We conclude that the increased threshold current density for x=0.33 has to be attributed to both, a larger leakage current and a reduced population ratio.     

Microscopic indium distribution and electron localization in zinc blende InGaN alloys and InGaN/GaN strained quantum wells

In order to give an atomic level understanding of the light emission mechanism and seek In distribution patterns closely related to the elusive electron localization centers, we optimize the crystal structure of zinc blende In _x Ga_1−x N (0≤x≤1) alloys with different In distributions and investigate their electronic structures using first-principles calculations. Our results show that In _x Ga_1−x N forms a random alloy, in which several-atom In–N clusters and In–N chains can exist stably with a high concentration due to their small formation energy. These In–N clusters and chains form more easily in zinc blende structure than in wurtzite structure. The band gap of zinc blende In _x Ga_1−x N alloys insensitively depends on the In distribution. Moreover, we find that both small In–N clusters and straight In–N chains with three or more In atoms, acting as radiative recombination centers, highly localize the electrons of the valence band maximum state and dominate the light emission of Ga-rich In _x Ga_1−x N alloys. The strains of In _x Ga_1−x N layers can enhance the electron localization in In _x Ga_1−x N/GaN strained quantum wells. Our results are in good agreement with experiments and other calculations.     

Superconductivity magnetism and low temperature specific heat in YBa2(Cu1−xFex)3O7−δ with δ0 and δ1

Magnetic and low temperature specific heat measurements have been performed on iron doped YBa₂(Cu_1−xFe_x)₃O_7−δ samples with different oxygen contents (δ0 and δ1). Iron doping induces an orthorhombic to tetragonal transition and a decrease of both T_c and diamagnetic signal. Low temperature specific heat measurements reveal a Schottky type anomaly for δ0 samples with x=0.01 (1.8 K) and x=0.02 (3 K). This anomaly is attributed to magnetic interactions within iron limited chains. A numerical analysis of this effect is proposed.     

Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

Perpendicular transport across (Al,Ga)As and the Γ to X transition

Tunneling (TU) and thermionic emission (TE) through GaAs/Al_xGa_1−xAs/GaAs structures was studied in the (001) direction, as a function of AlAs mole fraction x, from x=0.3 to x=0.8. Barrier heights deduced for TU and TE were the same, with a broad peak of 0.35eV for 0.4<x<0.5. Pre-factors for TU and TE were in reasonable agreement with theory for x<0.5 but dropped rapidly for larger x. The effective mass ratio for TU was Γ like for x<0.4 and increased to 0.2 for x > 0.5. These data suggest that TU transport is via the transverse X valleys for large x and the low pre-factors for both TU and TE indicate reflections at this boundary caused by wave-function mismatch. These data are also directly applicable to the design and optimization of heterojunction transistors.     

Study of correlation effects on stability of many-body complexes in III–V nitride quantum dots

The aim of this work is to analyze theoretically the correlation energies, for neutral, positive and negative excitons and bi-excitons in the III–V nitride In_xGa_1−xN/GaN quantum dot; where x=17.5% denotes the indium concentration. So, we propose a model consistent with experimental observations that is small In_xGa_1−xN truncated pyramids with circular base lying on wetting layer, both buried into GaN matrix. The correlation energies of many-body complexes X, X⁻, X⁺ and XX are investigated as a function of the quantum dot radius r_c and the intrinsic electric field.     

μSR Study of the Unusual Magnetic Ordering in the Frustrated Antiferromagnet Zn(Cr x Ga1−x )2O4

μSR spectra on the spin frustrating spinel antiferromagnet Zn(Cr _x Ga_1−x )₂O₄ (x=0.9,1.0) have been measured. For x=1.0 compound, both the relaxation rate and the initial asymmetry showed distinct anomalies at the Néel temperature. The magnetic susceptibility for the x=0.9 compound was known to have a faint peak at around 12 K, whose origin was not clear so far. Our μSR study revealed that this temperature is the onset temperature of development of the magnetic correlation accompanied by appreciable spin fluctuations. This revised version was published online in September 2006 with corrections to the Cover Date.     

Self-association behaviour of alcohols in diluted aqueous solutions

Summary Our recent studies related to the properties of alcohol/water mixtures show the occurrence of some kind of molecular aggregation in the water-rich region of composition beyond a threshold alcohol concentrationx ₂ ^*. The observed behaviour suggests that forx ₂<x ₂ ^* the alcohol molecules are essentially dispersed and surrounded by ?water cages? where the short-range order and microdynamic of water molecules are changed with respect to those of pure water. Alcohol molecules are in mutual contact at higher concentration only when almost all water is involved in hydration shells of alcohol molecules. The structural transition atx ₂ ^* resembles, for some aspect, the micellization process. The main results of these investigations are reviewed and discussed in this paper. Paper presented at the I International Conference on Scaling Concepts and Complex Fluids, Copanello, Italy, July 4–8 1994     

Parametric Frequency Converters Based on New Nonlinear Crystals

Results of investigations into the physical properties of a number of new nonlinear crystals are presented. The parameters of frequency converters manufactured on their basis are compared, and second-harmonic generation of CO₂ lasers first excited by frequency conversion in LiInSe₂, AgGa_{1– x} In_xSe₂, Ag_xGa_xGe_xS_{2(1 + x)}, and Hg_1–x Cd_xGa₂S₄ crystals is investigated. The superiority of HgGa₂S₄, Hg_1–x Cd_xGa₂S₄, and AgGa_1–x In_xSe₂ over the well-known crystals has been demonstrated for frequency conversion both within the middle-IR range and from the visible range to the middle-IR range. Advantages of LiInSe₂ and AgGa_1–x In_xSe₂ crystals are demonstrated for the direct frequency conversion of femtosecond laser radiation to the middle-IR range compared to the cascade frequency conversion and direct frequency conversion in LiInS₂ crystals.     

High magnetic field properties of mixed terbium-yttrium ferrite garnets

Magnetization measurements in d.c. magnetic fields up to 180 kOe have been performed on polycrystalline specimens and on single crystals of mixed terbium-yttrium iron garnets: Tb _x Y_3–x Fe₅O₁₂ in the 4.2–300 K temperature range. On polycrystals (x=2.5; 2; 1; 0.37) the concentration dependence of both compensation point and spontaneous magnetization has been determined. In the single crystals (x=2; 1; 0.37) a strong magnetic anisotropy has been observed with a change of the easy direction of magnetization from [111] to [100] whenx decreases; abrupt field-induced transitions have been observed at low temperatures when the external field is applied along the [100] direction.     

Vortex pinning properties of –Ba–Cu–O and –Ba–Cu–O superconducting bulks

We have studied the effect of a small amount of Y-site substitution by La or Pr ions on the vortex pinning in the Y–Ba–Cu–O system. (Y_1-xLa_x)–Ba–Cu–O and (Y_1-xPr_x)–Ba–Cu–O bulks were fabricated by the melt-textured growth, in which x was varied from 0 to 0.01. The critical current density J_c at 77 K is improved in magnetic fields parallel to the c-axis above 2–4.5 T and the corresponding irreversibility field, H_irr, shifts to the higher value in both bulks.     

Melting temperature variation with concentration of alkali halides in mixed crystal systems

Diffusion-vibration theory of melting (Sharmaet al 1991) has been extended to study the variation in the melting temperature of mixed ionic crystals with concentration. The melting temperature varies non-linearly with concentration in the KCl _x Br_1−x , RbCl _x Br_1−x , K _x Rb_1−x Br and NaCl _x Br_1−x mixed alkali halides and shows a sharp increase in melting temperature for values ofx>0.5 which is in good agreement with the experimental values. This behaviour has been explained on the basis of present propounded theory.     

2p3/2?13x?1?3x?13d?1 X-ray satellites spectra in the Lα1 region of 4d transition elements

The X-ray satellite spectra arising due to 2p _3/2 ⁻¹3x ⁻¹−3x ⁻¹3d ⁻¹ (x ≡ s, p, d) transition array, in elements with Z = 40 to 48, have been calculated, using available Hartree-Fock-Slater (HFS) data on 1s ⁻¹−2p ⁻¹ 3x ⁻ and 2p _3/2 ⁻¹−3x ⁻¹,3x ⁻¹ Auger transition energies. The relative intensities of all the possible transitions have been estimated by considering cross — sections for the Auger transitions simultaneous to a hole creation and then distributing statistically the total cross sections for initial two hole states 2p _3/2 ⁻¹−3x ⁻¹ amongst various allowed transitions from these initial states to 3x ⁻¹ 3d ⁻¹ final states by Coster-Kronig (CK) and shake off processes. In both these processes initial single hole creation is the prime phenomenon. Each transition has been assumed to give rise to a Gaussian line and the overall spectrum has been computed as the sum of these Gaussian curves. The calculated spectra have been compared with the measured satellite energies in Lα₁ spectra. Their intense peaks have been identified as the observed satellite lines. The peaks in the theoretical satellite spectra were identified as the experimentally reported satellites α₃, α₄ and α₅, which lie on the high-energy side of the Lα₁ dipole line.     

Optical properties and structural phase transitions in Mg x Zn1−x O under hydrostatic pressure

This article reports on the optical properties under pressure of Mg _x Zn_1?x O (x?<?0.13?±?0.2) thin films deposited on mica and fluorite substrates by pulsed-laser deposition. The absorption edge of the semiconductor alloy is measured in both the ambient pressure wurtzite phase and the high-pressure rock-salt phase for several Mg contents. In wurtzite Mg _x Zn_1?x O, a larger value of the band-gap is clearly correlated to a larger pressure coefficient of the band-gap. This effect is shown to be consistent with the decreasing contribution of cation d-levels to the valence band maximum states as the Mg content increases. The wurtzite-to-rock-salt transition pressure is observed to decrease from 9.5?±?0.2 (pure ZnO) to 7.0?±?0.2?GPa (for x?=?0.13), with an almost linear dependence on the Mg content. The same linear dependence on x, with virtually the same slope, is also found for the rock-salt-to-wurtzite reverse transition in the pressure down-stroke. For x?>?0.13, the rock-salt phase is observed to be metastable at room pressure, after a pressure cycle up to 15?GPa.     

Diamagnetism and muon knight shift in semimetallic and semiconducting BiSb single crystals

A series of single crystalline Bi_1−x Sb _x alloys (x=0,0.03, 0.14, 0.19, 0.37) covering both the semimetallic (0≤x≤0.07 orx≥0.22) and the semiconducting region (0.07≤x≤0.22) was examined using the stroboscopic μ⁺ SR method. The μ⁺ Knight shift, negative for all Sb concentrations, shows pronounced temperature dependences and large anisotropies. A scaling with the-negative-total magnetic susceptibility [1] is found in the semiconducting alloys. In detail, the isotropic part of the μ⁺ Knight shift is proportional to the isotropic part of the susceptibility, and the anisotropic Knight shift scales with the anisotropic susceptibility. Possible mechanisms leading to this relation are investigated.