Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.     

High-frequency pulsed laser diode application in multi-component laser Doppler anemometry

High-frequency pulsed AlGaAs semiconductor lasers with pulse durations in the nanosecond range show a distinctive enhancement of the time-averaged optical output power compared with continuous-wave mode operation. Hence, the signal-to-noise ratio is drastically increased in connection with fast Si-Avalanche photodetectors that show a maximum spectral sensitivity in the emission range of AlGaAs lasers. The emission behaviour and the application of sequential and phase- synchronized pulsed laser diodes in a multi-component laser Doppler anemometer with only one receiver, one signal processing chain and identical wavelength for all components, are outlined.     

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.     

High-power 1.625-μm strained multiple-quantum-well lasers as a light source for optical time-domain reflectometers

An optical output power of 160 mW has been successfully achieved in 1.625-m strained multiple-quantum-well lasers at a forward current of 800 mA under pulsed operation. Such a high output power has been achieved by optimizing the separated confinement heterostructure layer thickness. The operating life of high-power 1.625-m lasers has been estimated from the results of accelerated ageing at an ambient temperature of 45°C and 500 mA under continuous-wave operation. No significant change in the optical output power was observed up to 2000 hours. The mean time to failure is estimated to be about 4.5×10⁴ hours at 500 mA and 45°C.     

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 μm was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW. PACS 42.55.Rz; 42.55.Xi; 42.60.Gd     

Study on characteristics of diode-pumped continuous-wave tunable and passively Q-switched Tm:SSO laser

In this paper, we present a diode-pumped continuous-wave tunable and Q-switched Tm:SSO laser with a semiconductor saturable absorber mirror. In continuous-wave regime, a maximum output power of 340 mW at 1,980.7 nm was obtained. With a quartz plate, wavelength-tunable continuous-wave operation was achieved from 1,922 to 2,020 nm. In Q-switched regime, a maximum output pulse energy of 14.7 μJ under a repetition rate of 800 Hz and a minimum pulse width of 7.6 μs corresponding to a repetition rate of 8.8 kHz around 1,974.4 nm were obtained from the passively Q-switched Tm:SSO laser.     

Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.     

A compact efficient continuous-wave self-frequency Raman laser with a composite YVO4/Nd:YVO4/YVO4 crystal

We report a low-threshold continuous-wave self-Raman laser with a composite YVO₄/Nd:YVO₄/YVO₄ crystal. The use of the composite crystal can reduce the thermal effects and achieve the low-threshold and high Raman output operation. The Raman threshold is as low as 2.2 W for the 808-nm diode pump. Under the pump of a diode power of 25.5 W, the highest Raman output of 2.8 W is obtained at 1175 nm, corresponding to a slope efficiency of 12% and a diode-to-Stokes optical conversion efficiency of 11%. The power fluctuation is less than 1.1% under the highest Raman output.     

Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals

Efficient continuous-wave laser operation of Cr²⁺:ZnSe was demonstrated with an output power of 1400 mW at an absorbed pump power of 1900 mW from a Tm:YAG laser. Under continuous-wave diode pumping at 1.54 μm an output power of 15 mW was obtained from a Cr⁺²:ZnSe laser. Excited state absorption is shown to be negligible in the pump and laser spectral region. Received: 12 October 2000 / Published online: 30 November 2000     

Continuous wave and passively Q-switched laser performance of the mixed crystal Nd:Lux(x = 0.5)Y1 − x VO4

Diode end-pumped continuous-wave and passively Q-switched Nd:Lu_x(x = 0.5)Y_1 − xVO₄ mixed crystal lasers were demonstrated. At the pump power of 12.6 W, the maximum output power of 6.7 W around 1066.5 nm was obtained with the output transmission of 27%. The optical conversion efficiency is 53.2%, corresponding to a slope efficiency of 55.8%. For pulsed operation, the shortest pulse width attained was 8.6 ns, with the pulse repetition frequency of 99 kHz, and the single pulse energy and the peak power were estimated to be 25.5 μJ and 2.96 kW, respectively.     

Continuous-wave and Q-switched Operation of a Tm,Ho:YAP ring laser

We demonstrated continuous-wave (CW) and Q-switched operation of a Tm,Ho:YAP ring laser at 77 K. The maximum CW output power of 2 W at 2130.7 nm was obtained under the incident pump power of 12 W, corresponding to a slope efficiency of 23% and an optical-to-optical efficiency of 16.7%. For the Q-switched regime the maximum output energy of 5 mJ with the pulse width of 160 ns at the repetition rate of 100 Hz was achieved, corresponding to a peak power of 31.25 kW.     

Continuous-wave and pulsed laser performance of Nd:LuVO4 crystal

Received August 11, 2003 We report continuous-wave and actively Q-switched laser performance achieved with Nd:LuVO4 crystal for the 4F(3/2) --> 4I(1/2) transition (corresponding wavelength of 1065.8 nm) under high-power diode pumping. Continuous-wave output power of 12.55 W is obtained with an optical conversion efficiency of 50.2%. In actively Q-switched operation the average output power reaches 5.42 W at a pulse repetition frequency of 40 kHz with 18 W of pump power incident upon the crystal, yielding an optical conversion efficiency of 30.1%. The pulse energy and peak power reach 138 microJ and 16.2 kW, respectively, at a pulse repetition frequency of 25 kHz under a pump power of 14.2 W; the pulse duration is 8.5 ns.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Broad gain,continuous-wave operation of InP-based quantum cascade laser at λ~11.8 μm

We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm average ridge wide QCL with high-reflection (HR) coatings demonstrates a maximum peak power of 1.07 W at 283 K and CW output power of 60 mW at 293 K. The device also shows a broad and dual-frequency lasing spectrum in pulsed mode and a maximum average power of 258.6 mW at 283 K. Moreover, the full width at half maximum (FWHM) of the electroluminescent spectrum measured at subthreshold current is 2.37 μm, which indicates a broad gain spectrum of the materials. The tuning range of 1.38 μm is obtained by a grating-coupled external cavity (EC) Littrow configuration, which is beneficial for gas detection.     

Yb:LuAG单晶光纤的连续及脉冲激光性能

单晶光纤是具有准一维结构的功能晶体材料,结合了体块单晶优异的物化性能和传统光纤材料比表面积大的结构优势,是一种极具潜力的激光增益介质.目前单晶光纤激光的研究主要集中于连续激光输出,关于脉冲激光性能的研究相对较少.我们采用微下拉法(μ-PD)制备的Yb:LuAG单晶光纤(SCF)作为增益介质,获得了输出功率大于4 W、斜...     

Low-cost low-threshold diode end-pumped Tm:YAG laser at 2.016?μm

We report a low-threshold continuous-wave Tm:YAG laser that can be excited near 785?nm with low-cost, single-mode AlGaAs laser diodes. Low-threshold operation was achieved using a tightly focused, astigmatically compensated x-cavity containing a 2-mm-thick Tm:YAG crystal with 5?% Tm³⁺ concentration. Two linearly polarized single-mode diodes operating at 785.8?nm were polarization coupled to end pump the resonator. With a 6?% output coupler, as high as 32?mW of output power could be obtained at 2016?nm with 184?mW of incident pump power. The output could be further tuned in the 1935?C2035?nm range. Slope efficiency measurements indicated that cross-relaxation was very effective at this doping level. With a 2?% output coupler, lasing could be obtained with as low as 32.3?mW of pump power. In the limit of vanishing output coupling, the incident threshold pump power could be reduced to as low as 25?mW. To our knowledge, this is among the lowest lasing thresholds reported to date for continuous-wave, room-temperature thulium lasers.     

High-efficiency continuous-wave and Q-switched operation of a resonantly pumped Ho:YAP ring laser

We demonstrated continuous-wave (CW) and Q-switched operation of a room-temperature Ho:YAP ring laser that is resonantly end-pumped by a diode-pumped Tm:YLF laser at 1.91 ??m. Continuous wave output power of 3 W at 2119 nm is obtained under the absorbed pump power of 10.17 W, corresponding to a slope efficiency of 60%. For the Q-switched regime the maximum pulse energy of 1.58 mJ and the minimum pulse width of 590 ns at the repetition rate of 1 kHz are achieved.     

Highly efficient in-band pumped Er:YAG laser with 60 W of output at 1645 nm

A high-power Er:YAG laser that is in-band pumped by a high-power cladding-pumped erbium-ytterbium codoped fiber laser operating at 1532 nm is reported. The Er:YAG laser produced 60.3 W of continuous-wave output at 1645.3 nm in a beam with M2 approximately equal to 3 for 82 W of incident pump power and 20 W of TEM00 output with M2 < 1.2 for 32.4 W of incident pump power. The slope efficiency with respect to incident pump power at pump powers of >20 W was approximately 81%. In the Q-switched mode of operation, a slightly modified resonator configuration incorporating an electro-optic Q switch produced pulses of approximately 4 mJ energy and approximately 100 ns (FWHM) duration, corresponding to a peak power of approximately 42 kW at a repetition rate of 1 kHz for an incident pump power of 16.8 W. The prospects for further improvement in continuous-wave and Q-switched performance are discussed.     

LD side-pumped Nd:GGG CW laser operating at 1110 and 1105 nm dual wavelengths and 1110 nm single wavelength

A diode-side-pumped continuous-wave Nd:GGG laser operating at dual-wavelength (1110 and 1105 nm) and single wavelength of 1110 nm is demonstrated for the first time. The maximum output power of the 1110 and 1105 nm dual-wavelength operation is 13.2 W. By adjusting the orientation of an insertion mirror, the relative intensities of the two wavelengths can be changed. Thus single wavelength operation at 1110 nm is obtained, and the output power is 9.6 W.     

镱钠共掺氟化钙锁模激光器产生190 fs光脉冲

在半导体激光器高功率抽运的镱、钠共掺氟化钙(Yb, Na:CaF₂)激光器中, 通过对晶体的负热透镜效应的数值模拟,进行激光器腔型的调节和优化,使得该激光器在采用2%的耦合输出镜和吸收抽运功率为7.8 W的条件下,获得了脉冲宽度为190 fs、平均输出功率为503 mW、中心波长为1034 nm、重复频率为82.4 MHz的连续锁模脉冲序列. 如果计算晶体表面反射等其他形式的泄漏输出,激光器的总平均输出功率为905 mW. 关键词： Yb 2晶体')" href="#">Na:CaF₂晶体 激光二极管抽运 飞秒激光