Resistance anomaly and structural disorder in NiSi2 under high pressure

Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi₂ under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to −20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes −50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi₂ with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.     

Thermoelectric properties of Bi0.9Sb0.1 prepared by high pressure

The Bi_0.9Sb_0.1 powders were prepared by mechanical alloying and then pressed under 6 GPa at different pressing temperatures. X-ray diffraction spectra showed that the single phase was formed. The nanostructure of grain was observed by bright-field imaging. Electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The absolute Seebeck coefficient value of 120.3 μV/K was measured at 130 K. The figure-of-merit reached a maximum value of 0.90×10⁻³ K⁻¹ at 140 K.     

Structure and properties of DLC–MoS2 thin films synthesized by BTIBD method

Diamond-like carbon (DLC)–MoS₂ composite thin films were synthesized using a biased target ion beam deposition (BTIBD) technique in which MoS₂ was produced by sputtering a MoS₂ target using Ar ion beams while DLC was deposited by ion beam deposition with CH₄ gas as carbon source. The structure and properties of the synthesized films were characterized by X-ray diffraction, X-ray absorption near edge structure (XANES), Raman spectroscopy, nanoindentation, ball-on-disk testing, and corrosion testing. The effect of MoS₂ target bias voltage, ranging from −200 to −800 V, on the structure and properties of the DLC–MoS₂ films was further investigated. The results showed that the hardness decreases from 9.1 GPa to 7 GPa, the Young?s modulus decreases from 100 GPa to 78 GPa, the coefficient of friction (COF) increases from 0.02 to 0.17, and the specific wear rate coefficient (k) increases from 5×10⁻⁷ to 5×10⁻⁶ mm³ N⁻¹ m⁻¹, with increasing the biasing voltage from 200 V to 800 V. Also, the corrosion resistance of the DLC–MoS₂ films decreased with the raise of biasing voltage. Comparing with the pure DLC and pure MoS₂ films, the DLC–MoS₂ films deposited at low biasing voltages showed better tribological properties including lower COF and k in ambient air environment.     

In situ X-ray observation of phase transformation in Fe2O3 at high pressures and high temperatures

A laser-heated sample in a diamond anvil cell and synchrotron X-ray radiation was used to carry out structural characterization of the phase transformation of Fe₂O₃ at high pressures (30-96 GPa) and high temperature. The Rh₂O₃(II) (or orthorhombic perovskite) structure transforms to a new phase, which exhibits X-ray diffraction data that are indicative of a CaIrO₃-type structure. The CaIrO₃-type structure exhibited an orthorhombic symmetry (space group: Cmcm) that was stable at temperatures of 1200-2800 K and pressure of 96 GPa (the highest pressure used). Unambiguous assignment of such a structure requires experimental evidence for the presence of two Fe species. Based on the equation of state of gold, the phase boundary of the CaIrO₃-type phase transformation was P (GPa)=59+0.0022×(T−1200) (K).     

In situ observations of temperature- and pressure-induced phase transitions in TiH2: Angle-dispersive and synchrotron energy-dispersive X-ray diffraction studies

We investigated the behavior of the structure of titanium hydride (TiH₂), an important compound in hydrogen storage research, at elevated temperatures (0-120 °C) and high pressures (1 bar-34 GPa). Temperature-induced changes of TiH₂ as indicated in the alteration of the ambient X-ray demonstrated a cubic to tetragonal phase transition occurring at about 17 °C. The main focus of this study was to identify any pressure-induced structural transformations, including possible phase transitions, in TiH₂. Synchrotron X-ray diffraction studies were carried out in situ (diamond anvil cell) in a compression sequence up to 34 GPa and in subsequent decompression to ambient pressure. The pressure evolution of the diffraction patterns revealed a cubic (Fm-3m) to tetragonal (I4/mmm) phase transition at 2.2 GPa. The high-pressure phase persisted up to 34 GPa. After decompression to ambient conditions the observed phase transition was completely reversible. A Birch-Murnaghan fit of the unit cell volume as a function of pressure yielded a zero-pressure bulk modulus K₀=146(14) GPa, and its pressure derivative K′₀=6(1) for the high-pressure tetragonal phase of TiH₂.     

High pressure X-ray diffraction study of potassium azide

Crystal structure and compressibility of potassium azide was investigated by in-situ synchrotron powder X-ray diffraction in a diamond anvil cell at room temperature up to 37.7 GPa. In the body-centered tetragonal (bct) phase, an anisotropic compressibility was observed with greater compressibility in the direction perpendicular to the plane containing N₃⁻ ions than directions within that plane. The bulk modulus of the bct phase was determined to be 18.6(7) GPa. A pressure-induced phase transition may occur at 15.5 GPa.     

Thermal equation-of-state of osmium: a synchrotron X-ray diffraction study

The pressure-volume-temperature behavior of osmium was studied at pressures and temperatures up to 15 GPa and 1273 K. In situ measurements were conducted using energy-dispersive synchrotron X-ray diffraction in a T-cup 6-8 high pressure apparatus. A fit of room-temperature data by the third-order Birch-Murnaghan equation-of-state yielded isothermal bulk modulus K₀=435(19) GPa and its pressure derivative K′₀=3.5(0.8) GPa. High-temperature data were analyzed using Birch-Murnaghan equation of state and thermal pressure approach. The temperature derivative of bulk modulus was found to be −0.061(9) GPa K⁻¹. Significant anisotropy of osmium compressibility was observed.     

X-ray diffraction study of molybdenum diselenide to 35.9 GPa

In situ high-pressure angle dispersive synchrotron X-ray diffraction studies of molybdenum diselenide (MoSe₂) were carried out in a diamond-anvil cell to 35.9 GPa. No evidence of a phase transformation was observed in the pressure range. By fitting the pressure-volume data to the third-order Birch-Murnaghan equation of state, the bulk modulus, K_0T, was determined to be 45.7±0.3 GPa with its pressure derivative, K′_0T, being 11.6±0.1. It was found that the c-axis decreased linearly with pressure at a slope of −0.1593 when pressures were lower than 10 GPa. It showed different linear decrease with the slope of a −0.0236 at pressures higher than 10 GPa.     

X-ray diffraction and infrared spectroscopy of monazite-structured CaSO4 at high pressures: Implications for shocked anhydrite

X-ray diffraction and infrared spectroscopy of CaSO₄ are conducted to pressures of 28 and 25 GPa, respectively. A reversible phase transition to the monoclinic monazite-structure occurs gradually between 2 and ∼5 GPa with a highly pressure-dependent volume change of ∼6-8%. A second-order fit of the X-ray data to the Birch-Murnaghan equation of state yields a bulk modulus (K) of 151.2 (±21.4) GPa for the high-pressure monoclinic phase. In the high-pressure infrared spectrum, the infrared-active asymmetric stretching and bending vibrations of the sulfate tetrahedra split at the phase transition, in accord with the results of factor group analysis. Additionally, the tetrahedral symmetric stretching vibration, which is weak in the anhydrite phase, becomes strongly resolved at the transition to the monazite structure. The infrared results indicate that the sulfate tetrahedra are more distorted in the monazite-structured phase than in anhydrite. Kinetic calculations indicate that the anhydrite to monazite transformation may generate the phase transition observed near 30 GPa under shock loading in CaSO₄. Our results indicate that the anhydrite- and monazite-structured phases may be the only phases that occur under shock loading of CaSO₄ to pressures in excess of 100 GPa.     

High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S)

We report the results of an X-ray diffraction study of CdAl₂Se₄ and of Raman studies of HgAl₂Se₄ and ZnAl₂Se₄ at room temperature, and of CdAl₂S₄ and CdAl₂Se₄ at 80 K at high pressure. The ambient pressure phase of CdAl₂Se₄ is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl₂Se₄ and ZnAl₂Se₄ reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl₂S₄ and CdAl₂Se₄, which shows a very weak temperature dependence of the Raman-active phonon modes.     

High pressure investigation on double perovskite Ba2MgWO6

The results of high-pressure angle dispersive X-ray diffraction measurements up to 34.3 GPa on the double perovskite Ba₂MgWO₆ are presented. The ambient rock salt phase (SG: Fm-3m) is found to be stable up to the highest pressure of the present measurements. The third order Birch-Murnaghan equation of state when fitted to pressure-volume data, yielded a zero pressure bulk modulus (B₀),and its first and second pressure derivatives as 137.0(81) GPa, and 3.9(5) and −0.03 GPa⁻¹, respectively.     

Structure and high pressure behaviour of organic crystals based on aromatically substituted 1,3,4-oxadiazoles

The crystalline structure of a new compound containing the 1,3,4-oxadiazole moiety, 4-(5-methyl-1,3,4-oxadiazole-2yl-)-N,N′-dimethyl-phenylamine (MODPA) was determined. It shows a monoclinic structure with space group P2₁/c and lattice parameters: a=1.02997(6), b=0.64840(4), c=1.58117(10) nm and β=99.4820(10)°. To study the intermolecular interactions in oxadiazole containing organic crystals, X-ray studies on MODPA and 2,5-diphenyl-1,3,4-oxadiazole (DPO) were performed up to 5 GPa at room temperature. The Murnaghan equation of state is used to describe the compression behaviour of both substances. From these results, the bulk modulus and its pressure derivative were determined. The values obtained are: K₀=6.3 GPa and K′₀=6.8 for MODPA and K₀=7.3 GPa and K′₀=6.7 for DPO. Additionally, measurements under increasing temperature at ambient pressure were carried out to evaluate the thermal expansion coefficient: α=1.8×10⁻⁴ K⁻¹ for MODPA and α=1.9×10⁻⁴ K⁻¹ for DPO.     

Pressure-induced phase transformations in l-alanine crystals

Raman scattering and synchrotron X-ray diffraction have been used to investigate the high-pressure behavior of l-alanine. This study has confirmed a structural phase transition observed by Raman scattering at 2.3 GPa and identified it as a change from orthorhombic to tetragonal structure. Another phase transformation from tetragonal to monoclinic structure has been observed at about 9 GPa. From the equation of state, the zero-pressure bulk modulus and its pressure derivative have been determined as (31.5±1.4) GPa and 4.4±0.4, respectively.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

In situ high-pressure X-ray diffraction study of densification of a molecular chalcogenide glass

Structural mechanisms of densification of a molecular chalcogenide glass of composition Ge_2.5As_51.25S_46.25 have been studied in situ at pressures ranging from 1 atm to 11 GPa at ambient temperature as well as ex situ on a sample quenched from 12 GPa and ambient temperature using high-energy X-ray diffraction. The X-ray structure factors display a reduction in height of the first sharp diffraction peak and a growth of the principal diffraction peak with a concomitant shift to higher Q-values with increasing pressure. At low pressures of at least up to 5 GPa the densification of the structure primarily involves an increase in the packing of the As₄S₃ molecules. At higher pressures the As₄S₃ molecules break up and reconnect to form a high-density network with increased extended-range ordering at the highest pressure of 11 GPa indicating a structural transition. This high-density network structure relaxes only slightly on decompression indicating that the pressure-induced structural changes are quenchable.     

Influence of Ca additives on the optical and dielectric studies of sol-gel derived PbTiO3 ceramics

Sintered ceramic powders of calcium-doped lead titanate [Pb_1−xCa_xTiO₃] ceramics with different Ca dopant concentration in the range (x=0-0.35) have been prepared using a sol-gel chemical route. The sol-gel technique is known to offer better purity and homogeneity, and can yield stoichiometric powders with improved properties at relatively lower processing temperature in comparison to conventional solid-state reaction. X-ray diffraction (XRD) and Raman spectroscopy studies have been carried out to identify the crystallographic structure and phase formation. The infrared absorption spectra in the mid-IR region (400-4000 cm⁻¹) show the band corresponding to the Ti-O bond at ∼576 cm⁻¹ and is found to shift to a higher wave number 592 cm⁻¹ with increasing Ca content. The dielectric properties as a function of frequency, and phase transition studies on sintered ceramic Pb_0.65Ca_0.35TiO₃ has been investigated in detail over a wide temperature range 30-600 °C and the results are discussed.     

Annealing of thin Zr films on Si1−xGex(0≤x≤1): X-ray diffraction and Raman studies

X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si_1−xGe_x epilayers (0≤x≤1). The C49 Zr(Si_1−xGe_x)₂ is the unique phase obtained after complete reaction. ZrSi_1−xGe_x is formed as an intermediate phase. The C49 formation temperature T_f is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x=0.33, a film microstructure change was observed. Films annealed at temperatures close to T_f are continuous and relaxed. Annealing at T>T_f leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds T_f. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between −0.3 and −3.5 GPa for 0≤x≤1 which corresponds to a strain in the range (−0.11, −1.15%). X-ray and Raman determinations are in good agreement.     

Preparation, structure and oxide ion conductivity in Ce6−xYxMoO15−δ (x=0.1-1.4) solid solutions

The Ce_6−xY_xMoO_15−δ solid solution with fluorite-related structure have been characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), IR, Raman, scanning electric microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) methods. The electric conductivity of samples is investigated by Ac impedance spectroscopy. An essentially pure oxide-ion conductivity of the oxygen-deficiency was observed in pure argon, oxygen and air. The highest oxygen-ion conductivity was found in Ce_5.5Y_0.5MoO_15−δ ranging from 5.9×10⁻⁵ (S cm⁻¹) at 300 °C to 1.3×10⁻² (S cm⁻¹) at 650 °C, respectively. The oxide-ion conductivities remained stable over 80 h-long test at 800 °C. These properties suggested that significant oxide-ionic conductivity exists in these materials at moderately elevated temperatures.     

Experimental constraints on the phase diagram of titanium metal

The phase transformations of titanium metal have been studied at temperatures and pressures up to 973 K and 8.7 GPa using synchrotron X-ray diffraction. The equilibrium phase boundary of the α-ω transition has a dT/dP slope of 345 K/GPa, and the transition pressure at room temperature is located at 5.7 GPa. The volume change across the α-ω transition is ΔV=0.197 cm³/mol, and the associated entropy change is ΔS=0.57 J/mol K. Except for ΔV, our results differ substantially from those of previous studies based on an equilibrium transition pressure of 2.0 GPa at room temperature. The α-ω-β triple point is estimated to be at 7.5 GPa and 913 K, which is comparable with previous results obtained from differential thermal analysis and resistometric measurements. An update, more accurate phase diagram is established for Ti metal based on the present observations and previous constraints on the α-β and ω-β phase boundaries.     

Single-crystal elastic constants of magnesium difluoride (MgF2) to 7.4 GPa

The six independent elastic constants (C₁₁, C₁₂, C₁₃, C₃₃, C₄₄, and C₆₆) of single-crystal MgF₂ in the rutile structure have been measured by Brillouin spectroscopy at room temperature from ambient conditions to 7.4 GPa. Measurements were performed on two monocrystals with perpendicular faces, (001) and (100). A quasi-linear fit from finite strain theory was applied to the experimental data revealing the pressure dependence of the six elastic constants of MgF₂. The shear modulus C_S=1/2(C₁₁−C₁₂), and the aggregate shear (Voigt–Reuss–Hill) modulus G show a softening with increasing pressure, indicating the approach of the rutile-to-CaCl₂-type structural phase transition at P~9 GPa. The adiabatic bulk modulus (Reuss average) and its pressure derivative have been determined: K_0S=105.1±0.3 GPa, (∂K_0S/∂P)_T=4.14±0.05. The pressure–volume equation of state of MgF₂ was computed self-consistently from the Brillouin data. Our results are in good agreement with X-ray diffraction data. As the phase transition is approached, MgF₂ becomes strongly anisotropic and develops partially auxetic behavior (a negative Poisson's ratio in certain directions).