Non linear volume expansion in helium implanted erbium metal films

Large dimensional expansion has been observed at room temperature in erbium metal films implanted at room temperature with high fluences of helium. The interferometrically measured film thickness increases linearly with fluence up to a critical dose of 3 × 10¹⁷ He+/cm² (E = 160 keV) and is superlinear at higher fluences. Annealing at 400°C causes a reduction of the induced expansion for fluences below the critical dose without apparent release of helium. Annealing of samples implanted to fluences greater than 3.5 × 10¹⁷ He⁺/cm² causes accentuated expansion which is accompanied by formation and rupture of bubbles at the film surface.     

RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions

Transmission Electron Microscopy (TEM) and Rutherford Backscattering (RBS) have been used to observe the spatially isolated disordered zones in InP resulting from 100 keV Au ion irradiation at room temperature. Studies were carried out in interval of irradiation fluences less than lower value of full amorphization fluence. Such a value of fluence, as was established in the studies, can be estimated of order ∼2.5 × 10¹³cm⁻². The accumulation of damage due to the 100 keV Au ion irradiation was described in this material using a composite theoretical model accounting for both homogeneous and heterogeneous amorphization processes.     

Thermal desorption spectroscopy of he from Ni at and below saturation

Trapping of helium after implantation at energies of 8 to 150 keV and fluences up to 10¹⁹ He-ions/cm² in nickel at room temperature is studied by measuring the thermal desorption spectra during linear heating up to 1000°C. At several annealing stages the trapped helium is measured by means of the nuclear reaction ³He(d, α)H and the target surface is observed by laser scattering and with the scanning electron microscope.

The thermal desorption spectra depend strongly on the implantation fluence but only slightly on the implantation energy, indicating a similar trapping of He in the lattice for the implantation energies used here, The temperature at which desorption starts decreases with increasing fluence. Above the critical fluence for blistering an additional low temperature (150°C) desorption maximum is found.

The desorption peak at 150°C can be approximated theoretically with a single jump desorption process of first order and a Gaussian distribution of activation energies around 1 eV. The measurements indicate that at higher temperatures (>300°C) helium desorption is partly due to the opening of helium bubbles at the target surface.     

Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

The lattice damage of silicon produced by ion implantation at extremely high current density of 0.8 A/cm² (2.5᎒¹⁸ cm^-2 s^-1) was investigated. In a focused ion beam system, implantation was carried out with 70 keV Co ions, fluences of 1.2᎒¹⁶ cm^-2 and 6.7᎒¹⁵ cm^-2 into Si (111) at room temperature and elevated temperatures between 355 °C and 400 °C. Radiation damage measurements were performed by Rutherford backscattering/channeling spectroscopy and micro-Raman analysis. The radiation damage was studied as a function of pixel dwell-time and implantation temperature. The critical temperature for amorphization increases with current density. Although the fluence of the focused ion implantation was constant, crystalline layers were obtained for short and amorphous layers for long pixel dwell-times. The critical dwell-time of crystalline/amorphous transition increases with implantation temperature. From the results a typical time for defect annealing of 10^-5 s at 400 °C and an activation energy of (2.5ǂ.6) eV were deduced.     

Effect of implantation temperature on the blistering behavior of hydrogen implanted GaN

GaN epitaxial layers were implanted by 100 keV H⁺ ions at different implantation temperatures (LN₂, RT and 300 °C) with a fluence of 2.5×10¹⁷ cm^?2. The implanted samples were characterized using Nomarski optical microscopy, AFM, XRD, and TEM. Topographical investigations of the implanted surface revealed the formation of surface blistering in the as-implanted samples at 300 °C and after annealing at higher temperature for the implantation at LN₂ and RT. The physical dimensions of the surface blisters/craters were dependent on the implantation temperature. XRD showed the dependence of damage-induced stress on the implantation temperature with higher stress for the implantation at 300 °C. TEM investigations revealed the formation of a damage band in all the cases. The damage band was filled with large area microcracks for the implantation at 300 °C, which were responsible for the as-implanted surface blistering.     

Electrically active defect annealing in neutron and in ion-damaged Si

Hall effect and electrical conductivity measurements of defect annealing in 1 ohm-cm n-type and 2 ohm-cm p-type silicon were made following neutron irradiation at ～50°C. Measurements were also made following 400-keV B¹¹ ion implantation into a 100 ohm-cm n-type Si substrate. As the neutron fluence is increased the electrical effects of the damage eventually outweigh those of the chemical dopants, and further changes in the electrical properties become small. Conversely, significant electrical recovery upon annealing begins only when the electrical effects of the remaining damage become comparable to those of the chemical dopants. This condition will occur at higher anneal temperatures for higher fluence irradiations. The neutron fluence dependence of the damage and the annealing is interpreted in terms of the neutron energy per cm³. E, spent in atomic processes divided by the number/cm³, N, of electrically active dopants. When E/N ≤ 0.5 keV the electrical measurements show that the predominant defect annealing occurs below 400°C. However, when E/N > 0.5 keV electrical measurements emphasize the annealing at temperatures > 400°C. After 500°C annealing, energy levels in neutron damaged Si are observed at E_v +0.1 and E_v +0.15 eV in p-type and at E_c -0.33 eV in n-type Si. Application of the E/N criteria to room temperature implant-doped Si predicts that the electrical effects will be dominated by lattice damage even if all the implanted ions are substitutional.     

Annealing characteristics of highly doped ion implanted phosphorus layers in silicon

A combination of sheet resistance, stripping and Hall effect measurements have been made on phosphorus layers implanted into silicon at 40 and 100 keV with doses between 1 × 10¹⁵ and 5 × 10¹⁶ atoms/cm². The implants were made at room temperature and 450°C. After annealing at 650°C, the profile of electrically active phosphorus following a high dose room temperature implant, was found to be flat topped with a concentration of approximately 5 × 10²⁰/cm³. Very little diffusion occurred when annealing to 850°C where the free electron concentration increased to approximately 1.5 × 10²¹/cm³. Highly doped channeled tails were found when implanting at 450°C along the 〈110〉 direction and damage was being continuously annealed out preventing the formation of an amorphous phase. The rapid diffusion of the profile into the bulk found when annealing between 650°C and 850°C was speculated to be due to the presence of a dense dislocation entanglement in these layers following a hot implant.     

Electrical properties of Cd,Zn and S ion-implanted layers in GaAs

The electrical properties of cadmium, zinc, and sulfur ion-implanted layers in gallium arsenide have been measured by the van der Pauw-Hall technique. Ion implantation was performed with the substrates held at room temperature. The dependence of sheet resistivity, surface carrier concentration, and mobility on ion dose and on post-implantation anneal temperature was determined. In the case of 60 keV Cd⁺ ions implanted into n-type substrates, a measurable p-type layer resulted when samples were annealed for 10 minutes at a temperature in the range 600—900°C. After annealing at 300—900°C for 10 minutes, 100 per cent electrical activity of the Cd ions resulted for ion doses ≤ 10¹⁴/cm².

The properties of p-type layers produced by implantation of 85 keV Zn⁺ ions were similar to those of the 60 keV cadmium-implanted layers, in that no measurable p-type behavior was observed in samples annealed below a relatively high temperature. However, in samples implanted with 20 keV Zn⁺ ions a p-type layer was observed after annealing for 10 minutes at temperatures as low as 300°C.

Implantation of sulfur ions into p-type GaAs substrates at room temperature resulted in the formation of a high resistivity n-type layer, evcn before any annealing was performed. Annealing at temperatures up to 200°C or above 600°C lowered the resistivity of the layer, while annealing in the range 300—500°C eliminated the n-type layer.     

Low temperature channeling measurements of ion implantation lattice disorder in single crystal silicon

Lattice disorder for 200-keV Sb implantations into silicon has been studied by channeling effect analysis using 400 keV proton backscattering. Implantation and analysis were performed at low temperatures in the same system without warmup. In the temperature region between 85°K and room temperature the disorder production per incident ion at low doses is implantation temperature dependent. Approximately 18,000 silicon scattering centers per incident 200-keV Sb ion are observed for 90°K implantations, and this value is nearly a factor of three greater than at room temperature. Isochronal anneal curves of low fluence, low temperature implantations show, significant annealing below room temperature. The observed disorder production per incident ion decreases with increasing implantation temperature at temperatures 50 to 100°K lower than annealing occurs following 85 or 90°K implants. Strong similarities of the implantation temperature dependence and anneal behavior of the disorder exist for Sb and B implantations into silicon and suggest that much of the lattice disorder produced by ion implantation can be understood in terms of the basic properties of the silicon target material.     

Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ions

Abstract

We have used the standard channeling technique with a 1.0 MeV He⁺ analyzing beam to investigate the lattice disorder produced in GaAs by 60 keV Cd and 70 keV Zn ion implantations made at room temperature. The amount of disorder produced increases linearly with dose and saturates at a dose of approximately 1–2 × 10¹³ Cd ions/cm². The disorder present in low dose implants (～5 × 10¹² Cd ions/cm²) anneals appreciably by 150 °C. With increasing doses of Cd or Zn the samples show a continuous increase in the anneal temperature required to remove a substantial amount of lattice disorder. There is no apparent difference between the anneal of Zn and Cd implants. The rate at which lattice disorder is produced in GaAs by heavy ion implantations and the doses of heavy ions required to saturate the lattice disorder observed are significantly different from the values of the corresponding quantities for Si and Ge.     

Lattice disorder in germanium by boron ion bombardment

Abstract

The lattice disorder produced in germanium by 56keV boron-ion bombardment has been measured using the channeling-effect technique. The dependence on dose (10¹⁴-10¹⁶ ions/cm²) and implantation temperature (?90 °C to +130°C) has been studied. It is found that at room-temperature, each incident boron ion creates ?10 times more disorder in germanium than in silicon. It is remarked that, contrary to the present results, previously established anneal stages generally occur at significantly lower temperatures in germanium than in silicon.     

Sputtering of highly oriented pyrolytic graphite with 30 keV Argon ions

The influence of the incidence angle of 30 keV Ar⁺ ions, ion fluence and target temperature on the sputtering yield and surface microgeometry of highly oriented pyrolytic graphite (UPV-1T) samples was experimentally studied. It was found that at fluences more than 5 × 10¹⁹ ion cm^?2 the sputtering yield at room temperature in the range of the ion incidence angle from 0° to 80° is twice as small as the corresponding experimental data for both polycrystalline graphite and glassy carbon. The analysis of ion-induced relief permits us to suppose the topographical suppression mechanism of highly oriented pyrolytic graphite sputtering.     

Influence of nitrogen implantation on thermoluminescence of synthetic quartz

Thermoluminescence (TL) of synthetic quartz exposed to beta irradiation following implantation with 60?keV N⁺ ions at fluences ranging between 1?×?10¹⁴ and 5?×?10¹⁵?ions/cm² is reported. The glow curve measured at 5°C/s typically consists of a prominent peak near 110°C, studied in this work, and minor glow peaks at around 130°C and 190°C. The TL intensity of the main peak increased both with implantation and with fluence of implantation. The dependence of the intensity on heating rate and fluence suggests that the implantation introduces new defects that may possibly act as recombination centres. The increase in TL intensity with the heating rate exhibited by implanted samples has been observed in other luminescence materials. This anti-quenching phenomenon has been described as a competition effect between multiple luminescence pathways in luminescence materials. Kinetic analysis of the main glow peak using the initial rise, various heating rate and glow curve deconvolution methods shows that the activation energy of the main peak is about 0.7?eV with no systematic change due to ion fluence.     

Effect of bombardment with iron ions on the evolution of helium,hydrogen, and deuterium blisters in silicon

The effect of bombardment with iron ions on the evolution of gas porosity in silicon single crystals has been studied. Gas porosity has been produced by implantation hydrogen, deuterium, and helium ions with energies of 17, 12.5, and 20 keV, respectively, in identical doses of 1 × 10¹⁷ cm^–2 at room temperature. For such energy of bombarding ions, the ion doping profiles have been formed at the same distance from the irradiated surface of the sample. Then, the samples have been bombarded with iron Fe¹⁰⁺ ions with energy of 150 keV in a dose of 5.9 × 10¹⁴ cm^–2. Then 30-min isochoric annealing has been carried out with an interval of 50°C in the temperature range of 250–900°C. The samples have been analyzed using optical and electron microscopes. An extremely strong synergetic effect of sequential bombardment of silicon single crystals with gas ions and iron ions at room temperature on the nucleation and growth of gas porosity during postradiation annealing has been observed. For example, it has been shown that the amorphous layer formed in silicon by additional bombardment with iron ions stimulates the evolution of helium blisters, slightly retards the evolution of hydrogen blisters, and completely suppresses the evolution of deuterium blisters. The results of experiments do not provide an adequate explanation of the reason for this difference; additional targeted experiments are required.     

Channeling study of boron implanted silicon: Liquid nitrogen temperature implantation

Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 10¹⁵/cm². This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B¹¹(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of the boron lies on substitutional lattice sites, and therefore the carrier concentration is larger, if the implantation is done at liquid nitrogen temperature rather than at room temperature. Following liquid nitrogen temperature implantation, reverse annealing is observed from 600 to 800°C in the substitutional boron content, carrier concentration and sheet resistivity. The boron is more than 90 per cent substitutional after annealing to 1100°C for both the room temperature and liquid nitrogen temperature implantations. The low temperature implantation produced a buried amorphous layer, and this layer was observed to regrow from both the surface and substrate sides at approximately equal rates.     

Controlled surface crystallization of fused silica by Li+-Ion implantation

A new method of producing a glass-ceramic surface layer on fused silica has been demonstrated using Li⁺-ion implantation and relatively low-temperature annealing. Infrared reflection spectroscopy (IRS) was used to study the effects of ion implantation on structural changes. Isochronal annealing of samples implanted with 250 keV Li⁺/cm² brings about a dramatic change in the IRS spectra at 800°C in that it becomes identical with that of α-quartz. The dependence of the degree of crystallization on temperature, Li⁺-ion fluence, and silica type was studied.     

Photoluminescence studies of Si nanocrystals

Summary We report room temperature time-resolved photoluminescence (PL) and temperature dependence of continuous wave (cw) PL studies of high fluence (from 3·10¹⁶ to 3·10¹⁷ cm⁻²) Si⁺-implanted thermal SiO₂ layers after annealing at high temperature (T=1000°C). Such measurements were related to TEM analysis of samples. Nancocrystals were observed at TEM only a samples implanted at higher fluence. In these samples a near infrared PL signal peaked at approximately 1.5 eV with decay time of about 100 μs is present. Besides, in all samples a light emission is present in the green region of the spectrum. The intensity of the emission shows large variations with ion fluence, and is characterized by 0.4, 2 and 7 ns decay times. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce) Torino, 12–13 October 1995.     

Influence of argon-implantation on conventional and phototransferred thermoluminescence of synthetic quartz

Conventional and phototransferred thermoluminescence of crystalline synthetic quartz implanted with 70 keV Ar ions at fluences in the range 1?×?10¹⁴–5?×?10¹⁵?ions/cm² is reported. The glow curves, recorded at 5°C/s from beta-irradiated samples of similar mass, show a prominent peak between 100°C and 120°C. The thermoluminescence intensity of all implanted samples was greater than that of the unimplanted one. The increase in sensitivity is attributed to a corresponding increase in the concentration of point defects, as a result of the implantation, which act as electron traps or recombination centres. Kinetic analysis carried out using the peak shape, whole glow-peak and curve-fitting methods produced values of the activation energy, frequency factor and order of kinetics that are generally independent of implantation fluence. This result suggests that implantation did not necessarily affect the nature of the electron traps. With respect to phototransferred thermoluminescence, it was observed that it only appeared in the sample implanted at the highest fluence of 5?×?10¹⁵?ions/cm². This may be so because the concentration of deep traps produced as a result of implantation at low fluence is too low to give rise to phototransferred thermoluminescence. The intensity of the phototransferred thermoluminescence goes through a peak with illumination time. We attribute this behaviour to the relative concentration of holes at recombination centres and phototransferred electrons at shallow traps.     

The influence of incidence angle on disorder production in Cl and Ar ion implanted Si

Abstract

Cl and Ar ions have been implanted, at 30 keV and at various incidence angles, into Si substrates maintained at room temperature during implantation. Implantation induced Si disorder was measured using RBS channelling. The effects upon disorder of various incidence angles were studied over a fluence range of 10¹²-6·10¹⁵ ions·cm^?2

The results show that, at low fluences Cl and Ar ion implantations generate a bimodal disorder-depth profile, whilst at higher fluences measurements of amorphised layer thickness as a function of ion incidence angle allow values of the standard deviation of the disorder profile parallel and transverse to the ion beam direction for each ion to be obtained with good agreement to theoretical predictions. The disorder-fluence behaviour under these conditions is ion species independent.