Photorefractive features of non‐stoichiometry codoped Hf:Fe:LiNbO3 single crystals

Hf(2mol%):Fe(0.05wt%):LiNbO₃ crystals with various [Li]/[Nb] ratios of 0.94, 1.05, 1.2 and 1.38 have been grown. The photorefractive resistant ability increases with the accretion of [Li]/[Nb] ratio. When the ratio of [Li]/[Nb] is 1.20 or 1.38, the OH^‐ absorption band shifts to about 3477cm^‐1. The mechanisms of the photorefractive resistant ability increase and the absorption band shift have been discussed. The exponential gain coefficient (Γ) of the crystals was measured with two‐beam coupling method and the effective charge carrier concentration (N_eff) was calculated. The results show that Γ and N_eff increase with the accretion of [Li]/[Nb] ratio. The temperature effect of codoped Hf:Fe:LiNbO₃ crystals was also studied, it was found that the exponential gain coefficient increase dramatically at about 55°C, 70°C and 110°C, this is due to the inner electric field which is resulted from structure phase change. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and spectroscopic properties of erbium doped Lu2SiO5

A high optical quality erbium doped Lu₂SiO₅ single crystal has been grown by the Czochralski method. The distribution coefficient of Er³⁺ was measured to be ∼0.926. The absorption and emission spectra as well as the fluorescence decay curve of the excited state ⁴I_13/2 were measured at room temperature. The spectroscopic parameters were calculated using the Judd–Ofelt theory, and the J–O parameters Ω₂, Ω₄ and Ω₆ were found to be 4.451×10^-20, 1.614×10^-20 and 1.158×10^-20 cm², respectively. The room-temperature fluorescence lifetime of the Er³⁺⁴I_13/2→⁴I_15/2 transition was measured to be 7.74 ms. The absorption and emission cross-section as well as the gain cross-section in the eye-safe regime of 1400–1700 nm were also determined and discussed.     

Optical damage resistance of Hf:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios

Hf:Fe:LiNbO₃ crystals were grown in air by the Czochralski technique with various [Li]/[Nb] ratios ([Li]/[Nb]=0.94, 1.05, 1.20) in melt. The defect structure and location of doped ions were analyzed by the UV‐visible absorption spectra. The optical damage resistance of Hf:Fe:LiNbO₃ crystals was investigated by the photoinduced birefringence change and the transmitted light spot distortion method. The results show that the optical damage resistance ability of Hf:Fe:LiNbO₃ crystals decreases with the increase of the [Li]/[Nb] ratio. The dependence of the optical damage resistance of Hf:Fe:LiNbO₃ crystals on the defect structure is discussed in detail. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure and light‐induced scattering of Zr‐doped near‐stoichiometric Mn:Fe:LiNbO3 crystals grown by TSSG method

Near‐stoichiometric Mn:Fe:LiNbO₃ crystals doped with various concentration of ZrO₂ were grown by top seed solution growth (TSSG) method in the air atmosphere. The Zr concentration in the crystal was determined by inductively coupled plasma optical emission spectrometer. The defect structures were analyzed by means of ultraviolet‐visible and infrared transmittance spectra. The appearance of vibration peak at 3466 cm^‐1 in infrared spectra manifested that Li/Nb ratio in crystals approached to stoichiometric proportion. The fundamental absorption edge represented continuous red‐shift which was discrepancy with congruent doped LiNbO₃ crystals showed that doping ions possessed different location mechanism. The light‐induced scattering of the doped stoichiometric LiNbO₃crystals were quantitatively scaled via incident exposure energy. The results demonstrated that Zr(2 mol%):Mn:Fe:LiNbO₃ crystal had the weakest light‐induced scattering and the mechanism related to their defect structures was discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Neodymium (Nd) doped lutetium gallium garnet (Nd:Lu₃Ga₅O₁₂, Nd:LuGG) single crystal was successfully grown by the optical floating-zone method for the first time to our knowledge. Its absorption and luminescence spectra at room temperature were measured. By using the J–O theory, the spectral parameters of Nd:LuGG were calculated, which indicated that Nd:LuGG should possess comparable and even better laser properties than Nd:YAG. The maximum output power of 855 mW at 1062 nm was achieved with slope efficiency of 23.4% under a pump power of 5.2 W, and optical conversion efficiency of 16.4%. All the results show that Nd:LuGG is a potential laser material.     

Hydrothermal synthesis of Bi2Te3 nanowires through the solid-state interdiffusion of Bi and Te atoms on the surface of Te nanowires

Polycrystalline Bi₂Te₃ nanowires were prepared by a hydrothermal method that involved inducing the nucleation of Bi atoms reduced from BiCl₃ on the surface of Te nanowires, which served as sacrificial templates. A Bi–Te alloy is formed by the interdiffusion of Bi and Te atoms at the boundary between the two metals. The Bi₂Te₃ nanowires synthesized in this study had a length of 3–5 μm, which is the same length as that of the Te nanowires, and a diameter of 300–500 nm, which is greater than that of the Te nanowires. The experimental results indicated that volume expansion of the Bi₂Te₃ nanowires was a result of the interdiffusion of Bi and Te atoms when Bi was alloyed on the surface of the Te nanowires. The morphologies of Bi₂Te₃ are strongly dependent on the reaction conditions such as the temperature and the type and concentration of the reducing agent. The morphologies, crystalline structure and physical properties of the product were analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and X-ray photoelectron spectroscopy (XPS).     

Influence of oxygen/argon ratio on structural,electrical and optical properties of Ag-doped ZnO thin films

Ag-doped ZnO (ZnO:Ag) thin films were deposited on quartz substrates by radio frequency magnetron sputtering technique. The influence of oxygen/argon ratio on structural, electrical and optical properties of ZnO:Ag films has been investigated. ZnO:Ag films gradually transform from n-type into p-type conductivity with increasing oxygen/argon ratio. X-ray photoelectron spectroscopy measurement indicates that Ag substitutes Zn site (Ag_Zn) in the ZnO:Ag films, acting as acceptor, and being responsible for the formation of p-type conductivity. The presence of p-type ZnO:Ag under O-rich condition is attributed to the depression of the donor defects and low formation energy of Ag_Zn acceptor. The I–V curve of the p-ZnO:Ag/n-ZnO homojunction shows a rectification characteristic with a turn-on voltage of ∼7 V.     

Possibility of AlN growth using Li–Al–N solvent

The possibility of AlN growth using Li–Al–N solvent was investigated. Based on theoretical prediction, we selected Li₃N as a suitable nitrogen source for AlN growth. First, vapor phase epitaxy using Li₃N and Al as source materials was performed to confirm the following reaction on the growth surface: Li₃N+Al=AlN+3Li. The results suggest that the reaction proceeds to form AlN on the substrate under appropriate conditions. Next, AlN growth using Li–Al–N solvent was carried out. The Li–Al–N solvent was prepared by annealing of mixtures composed of Li₃N and Al. The results imply that AlN was formed under an Al-rich condition. Moreover, it was found that Li was swept out from AlN grains during growth. The results suggest that AlN growth using Li–Al–N solvent might be a key technology to obtain an AlN crystal boule.     

Cs2LiGdCl6 (Ce): New scintillation material

We investigated the scintillation properties of Cs₂LiGdCl₆:Ce³⁺ as a function of the Ce concentration. X-ray excited luminescence spectra of the scintillation material showed broad emission bands between 360 and 460 nm, with two overlapping peaks, due to the d→f transitions on Ce³⁺ ions. The samples provide good scintillation results. The energy resolution was found to be 5.0% (FWHM) at 662 keV for 10% Ce sample. Under γ-ray excitation, Cs₂LiGdCl₆:Ce³⁺ showed three exponential decay time components of about 130–200 ns decay time constant. The light output of the investigated samples was 20,000 photons/MeV for a 10% Ce concentration. The light output deviation from the linear response is within 7% between the energy range of 31 and 1333 keV. Overall, the scintillation properties confirm that Cs₂LiGdCl₆:Ce³⁺ single crystal is a promising candidate for medical imaging and radiation detection.     

Growth and property of Zn-doped near-stoichiometric LiTaO3 crystal

Near-stoichiometric LiTaO₃ (SLT) and Zn-doped near-stoichiometric LiTaO₃ (Zn:SLT) crystals with 10–15 mm in diameter and 10 mm in length were grown by using TSSG technique with K₂O as the flux. The effect of adding amount of K₂O was discussed in the growing process. The crystals were characterized by inductively coupled plasma-optical emission (ICP-OES), X-ray diffraction (XRD) and differential thermal analysis (DTA). The lattice constants of Zn:SLT were smaller than those of SLT and Curie temperature was higher than that of SLT. It was found that Zn doping is an efficient way to improve the optical damage resistance ability of SLT crystal. Compared with SLT crystal, Zn:SLT exhibited a much higher optical damage threshold, more than 500 MW/cm², which was attributed to Zn self-compensated effect that formed the charge compensated complexes, (Zn_Ta)³⁻–3(Zn_Li)⁺ in SLT crystal.     

Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals with various [Li]/[Nb] ratios

In:Fe:Cu:LiNbO₃ crystals were grown in air by the Czochralski technique with various [Li]/[Nb] ratios of 0.946, 1.050, 1.200, and 1.380 in melt. Based on the ICP‐AES (inductively coupled plasma atomic emission spectrometry) analyzed results, the chemical formula of the triple‐doped In:Fe:Cu:LiNbO₃ crystals were obtained. It can be seen that the near‐stoichiometric ratio value is between 1.050 and 1.200 for our samples. The optical damage resistance of In:Fe:Cu:LiNbO₃ crystals was characterized by changes in light‐induced birefringence and it increases with the increasing of [Li]/[Nb] ratios. The dependence of the optical damage resistance on the defect structure of In:Fe:Cu:LiNbO₃ crystals is discussed in detail based on the obtained chemical formulas. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical homogeneity investigations of Fe and Fe:Mn codoped LiNbO3 crystals

Lithium niobate (LiNbO₃) crystals doped with Fe and Fe:Mn were grown by Czochralski technique. The doping concentrations of Fe and Mn were optimized. Transmission studies reveal broad absorption band centered at 488 nm. The UV cutoff observed for Fe doped LiNbO₃ is 358 nm whereas for Fe:Mn codoped LiNbO₃ is 352 nm. This decrease in UV cutoff for Fe and Mn codoped LiNbO₃ compared to only Fe doped LiNbO₃ is due to the increase in Li/Nb ratio. Optical homogeneity was assessed using conoscopy and birefringence interferometry. Dark and photo conductivity measurements prove that LiNbO₃ is a negative photo conducting material. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Sn3O4 single crystal nanobelts grown by carbothermal reduction process

This article reports on the growth of single crystal Sn₃O₄ nanobelts and SnO by a carbothermal reduction process in two different regions of a furnace tube. Even though intermediate tin oxide compounds (Sn₃O₄) have been observed experimentally, the study of structures based on them is a challenging task. Characterization data allowed us to propose that Sn₃O₄ nanobelts grew by vapor–solid mechanism while SnO grew by self-catalyst vapor–liquid–solid mechanism. Electrical measurements of a single Sn₃O₄ nanobelt were performed at different temperatures, revealing undoped semiconductor characteristics.     

The effect of solvent ratio and water on the growth of C60 nanowhiskers

The growth of C₆₀ nanowhiskers (C₆₀NWs) prepared by a modified liquid–liquid interfacial precipitation method is investigated, focusing on the effect of solvent ratio and water content in the C₆₀–toluene–isopropyl alcohol (IPA) solution system. The precipitation of C₆₀NWs was markedly influenced by the solvent ratio of toluene to IPA, and the C₆₀NWs were found to grow longer above a critical diameter (D_c), which depends on the solvent ratio. The addition of a small amount of H₂O to the C₆₀–toluene–IPA solution promoted the growth of C₆₀NWs. This catalytic effect of water on the growth of C₆₀NWs was confirmed also by the experiment using heavy water (D₂O) and by the decrease of growth activation energy of C₆₀NWs with increase of H₂O content in the C₆₀–toluene–IPA solution.     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

Synthesis of monodispersed cubic magnetite particles through the addition of small amount of Fe into Fe(OH)2 suspension

Magnetite particles were synthesized through a process including dissolution of Fe(OH)₂ and precipitation of an oxidized phase in aqueous solution. The Fe³⁺ ion was added at the beginning of the synthesis to accelerate the formation of magnetite, control the particle size and improve the monodispersibility. It was found that the addition of Fe³⁺ ion affected the nucleation and the formation of magnetite particles significantly. Magnetite nanoparticles with small particle size and narrow size distribution were obtained. Furthermore, high magnetic properties were obtained in small particle size. The particle size and magnetic properties increased through the increase of Fe²⁺/Fe³⁺ ratio.     

Growth and Raman spectroscopic characterization of As4S4 (II) single crystals

As described by Kutoglu (1976 [16]), single crystals of As₄S₄ (II) phase have been grown using a new two-step synthesis that drastically increases the reproducibility that is attainable in synthetic experiments. First, through photo-induced phase transformation, pararealgar powder is prepared as a precursor instead of AsS melt. Then it is dissolved and recrystallized from CS₂ solvent. Results show that single crystals of the As₄S₄ (II) phase were obtained reproducibly through the dissolution–recrystallization process. Single crystals of As₄S₄ (II) obtained using this method were translucent and showed a uniform yellow-orange color. The crystal exhibits a platelet-like shape as a thin film with well-developed faces (0 1 0) and (0 1¯ 0). The grown crystals are as large as 0.50×0.50×0.01 mm. They were characterized using powder and single crystal X-ray diffraction techniques to confirm the phase identification and the lattice parameters. The As₄S₄ (II) phase crystallizes in monoclinic system with cell parameters a=11.202(4) Å, b=9.954(4) Å, c=7.142(4) Å, β=92.81(4)°, V=795.4(6) Å³, which shows good agreement with the former value. Raman spectroscopic studies elucidated the behavior of the substance and the relation among phases of tetra-arsenic tetrasulfide.     

Raman scattering study of crystalline and melting states of BaO·2B2O3

Melting and crystallization scenarios of barium tetraborate BaB₄O₇ (BaO·2B₂O₃) are studied in situ by Raman spectroscopy. It is shown that the scenario depends on the temperature–time history of melt. Crystallization conditions of the beta modification of barium tetraborate (β-BaB₄O₇) from a stoichiometric glass structure BaO·2B₂O₃ were investigated.     

Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Dielectric layer containing CoSi₂ nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp₂ and NH₃ plasma mixed with SiH₄ without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi₂ nanocrystal. The gate stack composed of dielectric layer containing CoSi₂ nanocrystals with ALD HfO₂ capping layer together with Ru metal gate was analyzed by capacitance–voltage (C–V) measurement. Large hysteresis of C–V curves indicated charge trap effects of CoSi₂ nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.