Inversion of spin photocurrent due to resonant transmission

We report on the inversion of spin-dependent photocurrent via interface localized states formed at the interface of an Fe/n-AlGaAs/GaAs quantum well heterostructure by means of an optical spin orientation technique. A careful adjustment of the excitation photon energy, which is determined by a separate analysis of electroluminescence spectra under a spin injection condition, enables us to explore the spin-dependent characteristics of photoelectron transmission from the quantum well into Fe. The bias dependence of the spin-dependent photocurrent shows clear spikelike features at the voltage which is compatible with the formation of the interface localized resonant states in the Schottky depletion layer.     

Field induced interlayer interband coupled states in aperiodic InAs/GaSb heterostructures

The interlayer interband state coupling and the interfacial composition effect in aperiodic InAs/GaSb (001) heterostructures are studied with the scattering theoretic Green's function technique, which can handle interlayer multi-subband interaction under the external bias. The current density calculation shows that the interlayer interband coupled subbands enhance the peak current density by facilitating electron resonant tunneling. The calculated spectral local density of states of a heterostructure predicts that the GaAs interface shifts the energies of the quasibound states to lower energies than those of the InSb interface case, which agrees with experimental results.     

Propagation of electric fields induced by optical phonons in semiconductor heterostructures

The penetration of electric fields accompanying long-wavelength optical phonos from one region of a semiconductor heterostructure to another is investigated. It is proposed to determine the penetration depth of such fields from the relaxation caused by these fields in quantum dots. By the example of a cylindrical Ge quantum dot embedded in a GaP/GaAs heterostructure, it is shown that the electric fields induced by longitudinal optical phonons can penetrate through the interface between semiconductors at distances of about 100 nm.     

Optical transitions on a type II semiconductor interface in the empirical tight-binding theory

A tight-binding theory is elaborated for multilayer semiconductor heterostructures of type II in which the states of electrons and holes are dimensionally quantized in adjacent layers and overlap in a narrow region near the interface. The major effort is focused on the calculation of linear photoluminescence polarization induced by the anisotropy of chemical bonds on the ideal interface under the radiation along the axis of growth. An expression for the matrix element of the optical transition on the type-II interface under arbitrary polarization of the emitted photon is obtained. The treatment is based on the sp 3 tight-binding model. The effect of the interface tight-binding parameters considered as free ones on the linear photoluminescence polarization is analyzed. The theory allows for the giant linear photoluminescence polarization discovered in the ZnSe/BeTe heterostructure; it also predicts that the polarization plane usually coincides with the plane containing the chemical bonds at the heterojunction.     

First principle study on interfacial interaction of black phosphorus and CsBr vdW heterostructure

Two dimensional crystalline materials have attracted much attentions due to the establishment of heterostructure that can adjust their electrical and optical properties, and have potential applications in lasers, light-emitting diodes, solar cells and high mobility transistors. And the interface engineering is an effective route to tune structural and electrical properties in semiconductor heterostructures. In this study, the electronic structure, charge transport and optical properties of monolayer caesium bromide and black phosphorus (CsBr/BP) heterostructure are calculated by the first principle based on density functional theory (DFT). It was found that the characteristics of electronic band structures of the monolayer CsBr and BP remain in the heterostructure, and the effective mass and carrier mobility are highly anisotropic. When the heterostructure is uniaxially stretched, the mobility of electron is greater than that of the hole, while the biaxial stretching is just the opposite, the mobility of hole is greater than that of the electron. In addition, compared with the CsBr monolayer, the light absorption of the heterostructure is significantly enhanced, especially in the infrared, indicating that the CsBr/BP heterostructure can be well applied to photovoltaic devices in the future.     

Electron self-energy and effective mass in a single heterostructure

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Greenfunction method. Numerical calculations of the electron self-energy and effective mass for GaAs/A1As heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.     

Dispersion and the electron–phonon interaction in a single heterostructure

We investigate the electron–phonon interaction in a polar–polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a continuum model that accounts for both mechanical and electrical continuity over a heterostructure interface. We discuss the use of other models for such systems, such as the bulk phonon (3DP) and dielectric continuum (DC) models, using previously developed sum-rules to explain the limitations on their validity. We find that our linear combination (LC) model gives an excellent agreement with scattering rates previously derived using the 3DP and DC models when the lattice dispersion is weak enough to be ignored, however, when there is a noticeable lattice dispersion, the LC model returns a different answer, suggesting that interface modes play a much greater part in the scattering characteristics of the system under certain conditions. We also discuss the remote phonon effect in polar/polar heterostructures.     

First-principles study of two-dimensional van der Waals heterostructure based on ZnO and Mg(OH)2: A potential photocatalyst for water splitting

In this study, the structural, electronic and optical properties of the two-dimensional heterostructure based on ZnO and Mg(OH)₂ are investigated by first-principle calculations. The ZnO/Mg(OH)₂ heterostructure, formed by van der Waals (vdW) interaction, possesses a type-II band structure, which can separate the photogenerated electron–holes constantly. The heterostructure has decent band edge positions for the redox reaction to decompose the water at pH 0 and 7. As for the interfacial properties of the heterostructure, the trend of band bending of the ZnO and Mg(OH)₂ layers in the heterostructure is addressed, which will result a built-in electric field. Besides, the charge-density difference and potential drop across the interface of the ZnO/Mg(OH)₂ vdW heterostructure are also calculated. Finally, the heterostructure is demonstrated that it not only has excellent ability to capture the light near the visible spectrum region, but also can improve the optical performance for the monolayered ZnO and Mg(OH)₂.     

Stability and electronic structure studies of LaAlO_3/SrTiO_3 (110) heterostructures

The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAlO3/SrTiO3(110). By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAlO3/SrTiO3(110) heterostructure, the Ti–O octahedron distortions cause the Ti t2 gorbitals to split into the twofold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2 gorbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaAlO3 and SrTiO3leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAlO3/SrTiO3(110).     

Optical detection of an electric field in a GaAs/AlGaAs <Emphasis Type="Italic">n</Emphasis>-<Emphasis Type="Italic">i</Emphasis>-<Emphasis Type="Italic">n</Emphasis> heterostructure with double quantum wells

Processes occurring when a static transverse electric field is applied to a GaAs/AlGaAs n-i-n heterostructure with single quantum wells and asymmetric tunnel-coupled double quantum wells have been investigated by optical methods. The difference between the energies of exciton transitions for quantum wells of different widths makes it possible to attribute the observed photoluminescence peaks to particular pairs of wells or particular single quantum wells. The local electric field for each quantum well has been determined in terms of the Stark shift and splitting of exciton lines in a wide range of external voltage. A qualitative model has been proposed to explain the nonmonotonic distribution of the electric field over the depth of the heterostructure.     

光子晶体环形谐振腔异质结构超微多路光分束器

基于直波导和环形谐振腔的耦合特性,设计了一种新型、高效的二维光子晶体异质结构光分束器.时域有限差分法模拟表明,该设计仅仅通过改变介质柱的折射率,使光场发生重新分布,便可实现输出能量的均分或自由分配.在通信波长范围,该设计结构尺寸小、分束角度大、分束率高,这些特性使其在光通信领域具有重要的应用前景.     

Interface Polaron Within Parallel Electric and Magnetic Fields

A combinative method of variational wavefunction and harmonic oscillator operator algebra is used to treat the interface polaron in a semi-infinite polar crystal within parallel electric and magnetic fields perpendicular to the interface. Both the bulk longitudinal optical phonon and the interface optical phonon together with the anisotropic mass of the electron are included. The energy level correction up to the second-order perturbation, cyclotron-resonance frequency and cyclotron mass are expressed as functions of the electric and magnetic fields and a parameter characterizing the mean distance of the polaron from the interface. This theory is used to calculate numerically the single heterostructure AlAs/GaAs, when the electron is at the X high-symmetry point of the conduction band of AlAs. The results show that the magnetic field greatly enhances the polaronic correction of the electron energy levels while the electric field only increases the correction of their surface optical phonon part but obviously decreases that of their bulk optical mode part and thus the total energy correction decreases as the electric field increases. The change of red shift due to the electron-phonon interaction with electric and magnetic fields is also obf ained.     

Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode

Resonant tunneling of electrons is thoroughly studied in in-plane magnetic fields. Anticrossing is revealed in a spectrum of two-dimensional electrons at energies of optical phonons. The magnetic field changes the momentum of tunneling electrons and causes a voltage shift of a resonance in the tunnel spectra in accordance with the electron dispersion curve. Anticrossing is clearly observed in second derivative current-voltage characteristics of a resonant tunneling diode made of a double-barrier Al_0.4Ga_0.6As/GaAs heterostructure.     

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=E_g(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.     

Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface

It is shown that optical orientation of electron spins in semiconductors can be used as a basis to develop a high-sensitivity method for measuring the dependence of the lifetime of carriers on their concentration. Experiments performed in a stationary regime on a GaAs/AlGaAs heterostructure at low excitation levels provided insight into the nonradiative recombination of electrons and holes separated by an electric field built into the interface.     

Field-enhanced charge flow in nanorod heterostructure solar cells

Recent studies on organic heterostructure solar cells have indicated that interface morphology plays an important role in determining the quantum efficiency. Hybrid heterostructure mixing donor and acceptor semiconductors appear to offer the best opportunity in achieving superior performance and there are indications that a network of percolated heterojunctions can be quite effective in promoting light absorption and exciton quenching. Charge transport and collection efficiency, however, appear to be more complex in the bulk heterostructure and the nature of charge flow depends largely on the type of current paths in existence. We report in this work the possible existence of field-assisted charge flow in the nanorod heterostructure solar cells when carriers of different polarity move in close proximity. The field-effect associated with the charge density gradients can exert a force on the nearby carriers resulting in an increase in the short-circuit current. The model is used to explain data reported in the literature on solar cells composed of TiO₂ nanorods embedded in a conjugated polymer.     

Penetration of electric fields induced by surface phonon modes into the layers of a semiconductor heterostructure

The penetration of electric fields induced by surface optical phonons into adjacent layers of semiconductor heterostructures is investigated. The mechanical displacement of ions, the corresponding electric fields, and the dispersion relations for surface phonon modes in single and double heterostructures are calculated within the macroscopic phenomenological model of optical lattice vibrations. To estimate the penetration depth of the surface electric fields, the intraband relaxation rate of the electron subsystem of a quantum dot embedded in a heterostructure, related to these fields, is calculated as a function of the distance from the interface between the media to the quantum dot.     

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we study the structural, electronic, and optical properties of vertically stacked GaS-SnS₂ heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS₂ heterostructure is a semiconductor with a suitable indirect band gap of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS₂ heterostructure can be effectively tuned by an external strain and electric field. The optical absorption of GaS-SnS₂ heterostructure is more enhanced than those of the GaS monolayer and SnS₂ monolayer in the visible light region. Our results suggest that the GaS-SnS₂ heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in the visible light region.     

Broad omnidirectional high-precision filters design using genetic algorithm

An application of the genetic algorithm in designing omnidirectional optical filters is reported in this paper. Concerning different periodic numbers and thickness ratios in the heterostructure, we gave some optimization examples and finally achieved a photonic heterostructure with very broad omnidirectional filter bandwidth as well as a very narrow transmission window. And it is found that when the normal incident beam is tilted at a negligibly small angle, the perfect transmittance peak will vanish. Hence, this heterostructure can be regarded as omnidirectional high-precision filters with potential application in optical filters, optical switches, and many other optical telecommunication areas.     

二维MoSi2N4WSe2异质结的第一性原理研究

实验上新合成的MoSi2N4（MSN）由于其独特的七原子层结构和电子特性引起了人们的广泛关注。本文搭建了一种由二维MSN与二维WSe2（WS）垂直堆垛而成的二维MSN/WS异质结,其表现出直接间隙半导体和I型能带排列的特性,具有1.46 eV的带隙。在异质结界面处存在一个由电荷耗尽层MSN指向电荷积累层WS微弱的内建电场。最后,通过施加双轴应变对二维MSN/WS异质结进行调控。发现在正双轴应变的作用下,MSN/WS异质结保持了原来直接带隙半导体和I型能带排列特性;在负双轴应变作用下,MSN/WS异质结由原来的直接带隙半导体转变为间接带隙半导体,当施加的负双轴应变达到-6%与-8%时,I型能带排列转变为Ⅱ型能带排列。