AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges

We demonstrate a diode laser system which is suitable for high-resolution spectroscopy in the 1.2 μm and yellow spectral ranges. It is based on a two-facet quantum dot chip in a Littrow-type external cavity configuration. The laser is tunable in the range 1125–1280 nm, with an output power of more than 200 mW, and exhibits a free-running line width of 200 kHz. Amplitude and frequency noise were characterized, including the dependence of the frequency noise on the cavity length. Frequency stabilization to a high-finesse reference cavity is demonstrated, whereby the line width was reduced to approx. 30 kHz. Using a femtosecond frequency comb, the residual frequency instability was determined and found to be below 300 Hz on the time scales 1–300 s. Yellow light (>3 mW) at 578 nm was generated by frequency doubling in an enhancement cavity containing a PPLN crystal. The source has potential application for precision spectroscopy of ultra-cold Yb atoms and cold molecular hydrogen ions.     

Low threshold, actively Q-switched Nd:YVO4 self-Raman laser and frequency doubled 588 nm yellow laser

We reported an actively Q-switched, intracavity Nd³⁺:YVO₄ self-Raman laser at 1176 nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5 mW, 588 nm yellow laser is achieved. The maximum Raman laser output at is 182 mW with 1.8 W incident pump power. The threshold is only 370 mW at a pulse repetition frequency of 5 kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow.     

Efficient, kHz repetition rate, gain-switched Cr:forsterite laser

We have developed a gain-switched room-temperature Cr:forsterite laser operating at repetition rates of between 1 and 34 kHz, and pumped by a continuous wave, Q-switched Nd:YAG laser. With optimised output coupling, an output pulse energy of 52 μJ was measured at 1.5 kHz repetition rate, corresponding to 11% efficiency and 13% slope efficiency. Threshold pulse energy was 53 μJ. Output power of 370 mW was obtained at 10 kHz repetition rate and 4.4 W pump power. Water cooling was not required for repetition rates up to 10 kHz. In a tunable, folded resonator, the Cr:forsterite wavelength tuned between 1173 and 1338 nm. This laser operated with maximum pulse energy of 34 μJ, efficiency of 13%, and power of 307 mW. The laser output was close to diffraction-limited with M² of 1.2. Received: 6 January 1999 / Published online: 29 July 1999     

Passively Q-switched <Emphasis Type="Italic">a</Emphasis>-cut Nd:YVO<Subscript>4</Subscript> self-Raman laser

A passively Q-switched a-cut Nd:YVO₄ self-stimulating Raman laser using a Cr:YAG saturable absorber has been demonstrated for the first time. The maximum average output power of the self-Raman laser at 1176 nm is 347 mW at the incident pump power of 10 W with a pulse repetition frequency (PRF) of 66 kHz. The pulse width, pulse energy of the 1176 nm are found to be 10 ns and 5.6 μJ. The conversion efficiency from diode laser input power to Raman output power is 3.47%.     

400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration

Continuous wave power of more than 400 mW at 488 nm has been generated by frequency doubling of 2.45 W at 976 nm obtained from a distributed Bragg reflector tapered diode laser. This results in a wavelength conversion efficiency of 16.5% and an electrical-to-optical efficiency of more than 4.5%. We used a 50 mm long periodically poled MgO:LiNbO₃ bulk crystal in single-pass configuration for the second harmonic generation. This is to the author’s knowledge the highest output power and the highest wavelength conversion efficiency at 488 nm generated by a monolithic semiconductor laser device in single pass configuration with a bulk crystal. A deviation from the quadratic dependency of the frequency doubling is explained by the decrease of the beam quality of the fundamental wave.     

LD end-pumped c-Cut Nd:YVO<Subscript>4</Subscript>/KTP self-Raman laser at 560 nm

Intra-cavity sum frequency generation (SFG) of c-cut Nd:YVO₄ self-Raman laser was investigated for the first time. A 4 × 4 × 10 mm³ KTP crystal with a type-II phase-matching cutting angle (θ = 83.4°, φ = 0°) was used for SFG between the fundamental light at 1066 nm and first-Stokes light at 1178 nm. The laser system with different curvature radii of output couplers and different pulse repetition frequencies were investigated. At a pump power of 14 W and pulse repetition frequency of 20 kHz, the average output power of yellow-green laser at 560 nm up to 840 mW was achieved, corresponding to a slope efficiency of 7.6% and a conversion efficiency of 6% with respect to diode pump power.     

Passive mode-locking in diode-pumped c-cut Nd:LuVO<Subscript>4</Subscript> laser with a semiconductor saturable-absorber mirror

We demonstrated a diode-pumped passively mode-locked c-cut Nd:LuVO₄ picosecond laser with a semiconductor saturable-absorber mirror (SESAM) at a wavelength of 1067.8 nm. Due to the wide bandwidth of 0.48 nm, stable mode-locking has been generated with a duration as short as 3.7 ps, which is shorter than for the a-cut Nd:LuVO₄ laser. A maximum output power of 1.67 W was achieved to give a highest peak power of 3.47 KW at 18 W absorbed pump power.     

Efficient generation of orange light in a quasi-periodically poled LiTaO3 crystal

We present an approach to generating a tunable orange laser from 0.601 to 0.604 μm based on a quasi-periodically poled superlattice in LiTaO₃ and a Q-switched 1.064 μm Nd:YVO₄ laser as pump. The orange laser was generated in a cavity by a parametric process cascaded by a frequency mixing with a maximum output of 310 mW using 15 W pump power.     

Single-longitudinal mode Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript>/KTP green solid state laser

We present the concept and practical realization of a single frequency, tuneable diode pumped Nd:YVO₄/YVO₄/KTP microchip laser operating at 532 nm. Theoretical analysis of the single mode operation of such a laser configuration is presented. The single frequency operation has been obtained in a birefringent filter, where an YVO₄ beam displacer acts as an ideal polarizer. Experimental results are in good agreement with theoretical analysis. We have obtained stable single frequency operation, tuneable over 0.6 nm in the spectral range around 1064 nm. The laser operated with output power up to 110 mW at 53 nm. The total optical efficiency (808 nm to 532 nm) was 14%.     

Passively Q-switched laser operation in a composite Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript> crystal with a single-walled carbon nanotube saturable absorber

By using a piece of single-walled carbon nanotube saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser has been demonstrated for the first time. The maximum average output power and the shortest pulse width are 1220 mW and 103 ns at the incident pump power of 5.04 W for a 10% transmission of the output coupler. The highest pulse repetition rate of 415.6 kHz and the largest single-pulse energy of 2.94 μJ are also obtained. The composite Nd:YVO₄ crystal has more excellent laser performance than the normal Nd:YVO₄ crystal at 1064 nm.     

Diode-pumped intra-cavity doubled Nd:LuVO4 laser at 458 nm

We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO₄ laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump power of 22 W. The optical-to-optical conversion efficiency and slope efficiency is 1.5% and 2.3%, respectively. The power instability at the maximum output power in 30 min is better than 3%.     

Diode pumped Pr<Superscript>3+</Superscript>:LiYF<Subscript>4</Subscript>-BBO ultraviolet laser at 320 nm

A diode pumped Pr³⁺:LiYF₄ laser at 639.5 nm has been demonstrated. With an incident pump power of 920 mW, the maximum red output power was 272 mW. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a maximum ultraviolet power of 23 mW by using a β-BaB₂O₄ (BBO) nonlinear crystal. To the best of our knowledge, this is the first report on continuous-wave ultraviolet generation by intracavity frequency doubling Pr³⁺:LiYF₄ laser.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Diode single-end-pumped AO Q-switched Nd:GdVO<Subscript>4</Subscript> 266 nm laser

By simple extra-cavity frequency conversion, the performance of a diode single-end-pumped AO Q-switched Nd:GdVO₄/KTP/BBO 266 nm laser was demonstrated. Under the incident pump power of 14.32 W, the maximum average output power at 266 nm was 374 mW at the repetition of 20 kHz; the opticaloptical conversion efficiency was 2.6%. The corresponding pulse width was 5 ns, with the single-pulse energy and peak power calculated to be 18.7 μJ and 3.74 kW, respectively. The dependence of the operational parameters on the pump power was also investigated experimentally.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

Compact, Low Threshold Nd^3＋：YVO4 Self-Raman Laser at 1178 nm

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd^3＋ ：YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of S kHz. The maximum Raman laser output is 182 m W with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.     

Continuous-wave tunable Cr2+:ZnS laser

We report the first continuous-wave tunable over ∼280 nm around 2.3 μm room-temperature operation of a chemical vapor transport-grown and diffusion-doped Cr²⁺:ZnS laser, pumped by a Co:MgF₂ laser at 1.67 μm and generating over 100 mW of output power at 16% slope efficiency. The self-consistent results of the laser and spectroscopic analysis demonstrate a large potential of this crystal as an active medium for diode-pumped tunable mid-infrared sources. Received: 7 January 2002 / Revised: 14 March 2002 / Published online: 2 May 2002     

Diode-pumped Tm:KY(WO4)2 laser passively Q-switched with PbS-doped glass

Glass doped with PbS quantum dots is presented as a saturable absorber (SA) for a passive Q-switching of a diode-pumped 1.9 μm Tm:KYW laser. Output pulses with energy of 44 μJ at a repetition rate of 2.5 kHz with an average output power of 110 mW were obtained. The Q-switching conversion efficiency was 33%. The absorption saturation intensity of the glass doped with PbS quantum dots with a mean radius of 5.2 nm at a wavelength of 2 μm was measured to be 1.5 MW/cm².     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.