Room-temperature ferromagnetism in lightly Cr-doped ZnO nanoparticles

Zn_1−x Cr _x O (0≤x≤0.15) nanoparticles were synthesized by an auto-combustion method and characterized by x-ray diffraction and Raman scattering techniques. The solubility limit for Cr in ZnO was determined as x≈0.03. Room-temperature ferromagnetism (RT-FM) was observed in lightly Cr-doped ZnO nanoparticles with x=0.01 and 0.02. Raman scattering spectra of the lightly Cr-doped and Co-doped ZnO were studied and compared. The enhancement of both the magnetization and the intensity of Raman scattering peak associated with donor defects (Zn_i and/or V_O) and carriers indicates that light Cr doping in ZnO could be an effective way to achieve pronounced RT-FM and the ferromagnetism is closely related to the dopant-donor hybridization besides the ferromagnetic Cr–O–Cr superexchange interactions.     

Photocatalytic activity of 6.5 MeV electron-irradiated ZnO nanorods

The microwave-synthesized zinc-oxide (ZnO) nanonorods of average length of ～ 1500 nm and diameter ～ 100 nm were irradiated with 6.5 meV electrons. From sample to sample, the electron fluence was varied over the range 5×10¹⁴ to 2.5×10¹⁵ e-cm^?2. The pre- and post-electron-irradiated ZnO nanorods were characterized by X-ray diffraction, UV–VIS, EDAX, scanning electron microscopy, transmission electron microscopy, and BET methods. The results show that after electron irradiation, the ZnO nanorods could retain the hexagonal phase with the wurtzite structure; however, the average length of the ZnO nanorods reduced to ～ 800 nm. Moreover, the oxygen atoms from a fraction of ZnO molecules were dislodged, and the process contributed to the formation of Zn–ZnO mixed phase, with increased zinc to oxygen ratio. In the photo-degradation of Rhodamine-B, a significant enhancement in the photocatalytic activity of the electron-irradiated ZnO nanorods was observed. This could be attributed to the induced defects, reduced dimensions, and increased surface area of the ZnO nanorods, in addition to the formation of the Zn–ZnO phase. All these could collectively contribute to the effective separation of the photogenerated electrons from the holes on the ZnO nanorods, and therefore enhance the photocatalytic activity under UV exposure.     

Dielectric function dynamics during femtosecond laser excitation of bulk ZnO

Using a broad band dual-angle pump-probe reflectometry technique, we obtained the ultrafast dielectric function dynamics of bulk ZnO under femtosecond laser excitation. We determined that multiphoton absorption of the 800-nm femtosecond laser excitation creates a large population of excited carriers with excess energy. Screening of the Coulomb interaction by the excited free carriers causes damping of the exciton resonance and renormalization of the band gap causing broadband (2.3–3.5 eV) changes in the dielectric function of ZnO. From the dielectric function, many transient material properties, such as the index of refraction of ZnO under excitation, can be determined to optimize ZnO-based devices.     

Self-organized periodic surface structures on ZnO induced by femtosecond laser

Self-organized periodic surface structures on ZnO have been observed after multiple linearly polarized femtosecond laser pulse irradiation. The observed self-organized structures are attributed to the second harmonics in the sample surface excited by the incident laser. The grating orientation could be adjusted by the laser polarization direction. We also find that fluences play an important role in the formation of self-organized nanostructures.     

Effects of preannealing temperature of ZnO thin films on the performance of dye-sensitized solar cells

The preferred (002) orientation zinc oxide (ZnO) nanocrystalline thin films have been deposited on FTO-coated glass substrates by sol–gel spin-coating technology and rapid thermal annealing for use in dye-sensitized solar cells (DSSC). The effects of preannealing temperature (100 and 300°C) on the microstructure, morphology and optical properties of ZnO thin films were studied. The ZnO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopic (SEM) and Brunauer–Emmett–Teller (BET) analysis. The photoelectric performance of DSSC was studied by I–V curve and the incident photon-to-current conversion efficiency (IPCE), respectively. From the results, the intensities of (002) peaks of ZnO thin films increases with increasing preannealing temperature from 100°C to 300°C. The increase in pore size and surface area of ZnO films crystallized at the increased preannealing temperature contributed to the improvement on the absorption of N3 dye onto the films, the short-circuit photocurrent (J _sc) and open-circuit voltage (V _oc) of DSSC. The higher efficiency (η) of 2.5% with J _sc and V _oc of 8.2 mA/cm² and 0.64 V, respectively, was obtained by the ZnO film preannealed at 300°C.     

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl₂O₄ spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×10²⁰ cm⁻³ (and carrier mobility of 28 cm²/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.     

Photocatalytic activity of ZnO nanoparticles prepared via submerged arc discharge method

ZnO nanostructures were synthesized through arc discharge of zinc electrodes in deionized (DI) water. X-ray diffraction (XRD) analysis of the prepared nanostructures indicates formation of crystalline ZnO of hexagonal lattice structures. Transmission electron microscopy (TEM) images illustrate rod-like as well as semi spherical ZnO nanoparticles with 15–20 nm diameter range, which were formed during the discharge process with 5 A arc current. The average particle size was found to increase with the increasing arc current. X-ray photoelectron spectroscopy (XPS) analysis confirms formation of ZnO at the surface of the nanoparticles. Surface area of the sample prepared at 5 A arc current, measured by BET analysis, was 34 m²/g. Photodegradation of Rhodamine B (Rh. B) shows that the prepared samples at lower currents have a higher photocatalytic activity due to larger surface area and smaller particle size.     

The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method

Oriented ZnO nanorods were grown on ion-beam-sputtered ZnO seed layers through a hydrothermal approach without any metal catalyst. The sputtered ZnO seed layers were pre-annealed at different temperatures before the growth of ZnO nanorods. The effects of pre-annealing of the ZnO seed layers on the growth rate, crystallinity and optical properties of ZnO nanorods thereon were studied. The obtained ZnO nanorods had a wurtzite structure and grew along the preferential [0001] orientation with a normal direction to the substrates. Results show that the growth rate and density of the ZnO nanorods strongly depend on the pre-treatment conditions of the ZnO seed layer. With higher pre-treatment temperature, the crystallinity and surface characteristics of the ZnO seed layer were improved and thereafter the growth rate of ZnO nanorods thereon increased. Photoluminescence spectroscopy results show that the UV emission also becomes stronger and sharper with increasing annealing temperature of the ZnO seed layer.     

ZnO–CuO core–shell nanorods and CuO-nanoparticle–ZnO-nanorod integrated structures

ZnO–CuO core–shell nanorods and CuO-nanoparticle–ZnO-nanorod integrated structures were synthesized for the first time by a two-stage solution process. Scanning electron microscopy and high-resolution transmission electron microscopy show that the diameter and the length of the nanorods are around 60 and 800 nm, respectively. The morphologies of outer CuO could be varied from nanoparticles to nanoshells by adjusting the solvent and dipping processes of copper (II) nitrate solution. The CuO nanoparticles are single-crystalline or highly textured structures with size of around 30 nm. The CuO shell with thickness of around 10 nm is constructed of nanocrystals with sizes in the range of 3–10 nm embedded in an amorphous matrix. Room-temperature cathodoluminescence measurements of the CuO–ZnO nanocomposites exhibit relatively sharp ultraviolet emissions at 380 nm as well as broad green and yellow emissions at 500 and 585 nm. The p-CuO/n-ZnO one-dimensional nanocomposites are promising for optoelectronic nanodevice applications.     

Influences of Co doping on the structural and optical properties of ZnO nanostructured

Pure and Co-doped ZnO nanostructured samples have been synthesized by a chemical route. We have studied the structural and optical properties of the samples by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), field-emission transmission electron microscope (FETEM), energy-dispersive X-ray (EDX) analysis and UV–VIS spectroscopy. The XRD patterns show that all the samples are hexagonal wurtzite structures. Changes in crystallite size due to mechanical activation were also determined from X-ray measurements. These results were correlated with changes in particle size followed by SEM and TEM. The average crystallite sizes obtained from XRD were between 20 to 25 nm. The TEM images showed the average particle size of undoped ZnO nanostructure was about 20 nm whereas the smallest average grain size at 3% Co was about 15 nm. Optical parameters such as absorption coefficient (α), energy band gap (E _g ), the refractive index (n), and dielectric constants (σ) have been determined using different methods.     

New physics contribution to neutral trilinear gauge boson couplings

We study the one-loop new physics effects to the CP even triple neutral gauge boson vertices γ ^⋆ γ Z, γ ^⋆ Z Z, Z ^⋆ Z γ and Z ^⋆ ZZ in the context of Little Higgs models. We compute the contribution of the additional fermions in Little Higgs models in the framework of direct product groups where [SU(2)×U(1)]² gauge symmetry is embedded in SU(5) global symmetry and also in the framework of the simple group where SU(N)×U(1) gauge symmetry breaks down to SU(2) _L ×U(1). We calculate the contribution of the fermions to these couplings when T parity is invoked. In addition, we re-examine the MSSM contribution at the chosen point of SPS1a′ and compare with the SM and Little Higgs models.     

Spectroscopy of laser-produced cerium plasma for remote isotope analysis of nuclear fuel

A cerium oxide sample was ablated by 2nd harmonic radiation of Nd:YAG laser at a power density of 0.1 GW/cm². Time evolution of the ablation plume was investigated by laser absorption time-of-flight (TOF) measurement. It was found that the ablated ionic plume in vacuum consisted of two components having different velocities whereas the ablated neutral atoms had mainly a single component. The flow velocity perpendicular to the sample surface in vacuum was determined to be 3.5 km/s for neutral atoms, and 4.7 km/s and 9.3 km/s for singly charged ions. From the detailed plume evolution in ambient atmosphere with several pressures we obtained some experimental conditions suitable for isotope analysis of atomic cerium.     

Interpreting near-side correlations and the RHIC beam energy scan

Recent data from heavy ion collisions at RHIC show strong near-side correlations extending over several units of rapidity. This ridge-like correlation exhibits an abrupt onset with collision centrality. In this talk, I argue that the centrality and beam-energy dependence of these near-angle correlations could provide access to information about the Quark Gluon Plasma phase boundary and the Equation of State of nuclear matter. A beam-energy-scan at RHIC will better reveal the true source of these correlations and should be a high priority at RHIC.     

Integration of ZnO nanowires in gated field emitter arrays for large-area vacuum microelectronics applications

Addressable field emitter arrays (FEAs) have important applications in vacuum electronic devices. However, it is important to integrate nanowire emitters into a gated structure without influencing the device structure and maintain the excellent field emission properties of nanowire emitters in the FEAs after the fabrication process. In this study, gate-structure ZnO nanowire FEAs were fabricated by a microfabrication process. The structure combines a planar gate and an under-gate, which is compatible with the preparation of ZnO nanowire emitters. The effect of electrode materials on the field emission properties of ZnO nanowires was studied using a diode structure, and it was found that ZnO nanowire pads on indium-tin-oxide (ITO) electrode showed better field emission performance compared with chromium (Cr) electrode. In addition, effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated by integrating the ZnO nanowire FEAs in a vacuum-encapsulated field emission display. The reported technique could be a promising route to achieve large area addressable FEAs.     

Cross-sections of large-angle hadron production in proton– and pion–nucleus interactions II: beryllium nuclei and beam momenta from ±3 GeV/c to ±15 GeV/c

We report on double-differential inclusive cross-sections of the production of secondary protons and charged pions, in the interactions with a 5% λ _abs thick stationary beryllium target, of proton and pion beams with momentum from ±3 GeV/c to ±15 GeV/c. Results are given for secondary particles with production angles 20° <θ<125°.     

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the ZnO/BaTiO₃ heterojunction grown by metal-organic chemical vapor deposition. The valence band offset (VBO) is determined to be 0.48±0.09 eV, and the conduction band offset (CBO) is deduced to be about 0.75 eV using the band gap of 3.1 eV for bulk BaTiO₃. It indicates that a type-II band alignment forms at the interface, in which the valence and conduction bands of ZnO are concomitantly higher than those of BaTiO₃. The accurate determination of VBO and CBO is important for use of semiconductor/ferroelectric heterojunction multifunctional devices.     

Pulsed laser deposition of ZnO grown on glass substrates for realizing high-performance thin-film transistors

We report characterization of ZnO thin-film transistors (TFTs) on glass substrates fabricated by pulsed laser deposition (PLD). ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy and Hall effect measurements. The XRD results showed high c-axis-oriented ZnO(0002) diffraction corresponding to the wurtzite phase. Moreover, the crystallization and the electrical properties of ZnO thin films grown at room temperature are controllable by PLD growth conditions such as oxygen gas pressure. The ZnO films are very smooth, with a root-mean-square roughness of 1 nm. From the Hall effect measurements, we have succeeded in fabricating ZnO films on glass substrates with an electron mobility of 21.7 cm²/V s. By using the ZnO thin film grown by two-step PLD and a HfO₂ high-k gate insulator, a transconductance of 24.1 mS/mm, a drain current on/off ratio of 4.4×10⁶ and a subthreshold gate swing of 0.26 V/decade were obtained for the ZnO TFT.     

Wavelength-independent all-optical synchronization of a Q-switched 100-ps microchip laser to a femtosecond laser reference source

We present a Q-switched microchip laser emitting 1064-nm pulses as short as 100 ps synchronized to a cavity dumped femtosecond laser emitting 800-nm pulses as short as 80 fs. The synchronization is achieved by presaturating the saturable absorber of the microchip laser with femtosecond pulses even though both lasers emit at widely separated wavelengths. The mean timing jitter is 40 ps and thus considerably shorter than the pulse duration of the microchip laser.     

Multiplicity distributions in canonical and microcanonical statistical ensembles

The aim of this paper is to introduce a new technique for the calculation of observables, in particular multiplicity distributions, in various statistical ensembles at finite volume. The method is based on Fourier analysis of the grand canonical partition function. A Taylor expansion of the generating function is used to separate contributions to the partition function in their power in volume. We employ Laplace’s asymptotic expansion to show that any equilibrium distribution of multiplicity, charge, energy, etc. tends to a multivariate normal distribution in the thermodynamic limit. A Gram–Charlier expansion additionally allows for the calculation of finite volume corrections. Analytical formulas are presented for the inclusion of resonance decay and finite acceptance effects directly into the partition function of the system. This paper consolidates and extends previously published results of the current investigation into the properties of statistical ensembles.     

Studying the relative bottom contribution via heavy-quark decay electron measurements in STAR

We report measurements of the azimuthal angular correlation distribution of heavy-quark decay electrons and open charmed mesons in pp collisions at  GeV in the STAR experiment at RHIC. This measurement in combination with current theoretical model calculations allows to extract the relative bottom contribution to the heavy-quark decay electrons, which is important for the interpretation of the observed strong suppression of the high-p _T electron yield in central Au+Au collisions.