Methanol adsorption on a CeO2(1 1 1)/Cu(1 1 1) thin film model catalyst

Adsorption and desorption of methanol on a CeO₂(1 1 1)/Cu(1 1 1) thin film surface was investigated by XPS and soft X-ray synchrotron radiation PES. Resonance PES was used to determine the occupancy of the Ce 4f states with high sensitivity. Methanol adsorbed at 110 K formed adsorbate multilayers, which were partially desorbed at 140 K. Low temperature desorption was accompanied by formation of chemisorbed methoxy groups. Methanol strongly reduced cerium oxide by forming hydroxyl groups at first, which with increasing temperature was followed by creation of oxygen vacancies in the topmost cerium oxide layer due to water desorption. Dissociative methanol adsorption and creation of oxygen vacancies was observed as a Ce⁴⁺ → Ce³⁺ transition and an increase of the Ce 4f electronic state occupancy.     

Effect of residual oxygen on ionization processes of Si and Si sputtered from Si(1 1 1)-7 × 7 surface

The effect of residual oxygen impurity on ionization processes of Si⁺ and Si²⁺ has been studied quantitatively. In this study, ion sputtering experiments were carried out for a Si(1 1 1)-7 × 7 surface, irradiated with 9-11 keV Ar⁰ and Kr⁰ beam. Even if the oxygen concentration is less than the detection limit of Auger electron spectrometry, SiO⁺ and SiO₂⁺ ions have been appreciably observed. Moreover, as the SiO⁺ and SiO₂⁺ yields increases, the Si⁺ yield is slightly enhanced, whereas the Si²⁺ yield is significantly reduced. From the incidence angle dependence of secondary ion yields, it is confirmed that Si⁺* (Si⁺ with a 2p hole) created in the shallow region from the surface exclusively contributes to Si²⁺ formation. By assuming that the SiO⁺ and SiO₂⁺ yields are proportional to the residual oxygen concentration, these observations are reasonably explained: The increase of Si⁺ with the increase of residual oxygen is caused by a similar effect commonly observed for oxidized surfaces. The decrease of Si²⁺ yield can be explained by the inter-atomic Auger transition between the residual oxygen impurity and Si⁺*, which efficiently interferes the Si²⁺ formation process.     

A DFT + U description of oxygen vacancies at the TiO2 rutile (1 1 0) surface

Experimental observations indicate that removing bridging oxygen atoms from the TiO₂ rutile (1 1 0) surface produces a localised state approximately 0.7 eV below the conduction band. The corresponding excess electron density is thought to localise on the pair of Ti atoms neighbouring the vacancy; formally giving two Ti³⁺ sites. We consider the electronic structure and geometry of the oxygen deficient TiO₂ rutile (1 1 0) surface using both gradient-corrected density functional theory (GGA DFT) and DFT corrected for on-site Coulomb interactions (GGA + U) to allow a direct comparison of the two methods. We show that GGA fails to predict the experimentally observed electronic structure, in agreement with previous uncorrected DFT calculations on this system. Introducing the +U term encourages localisation of the excess electronic charge, with the qualitative distribution depending on the value of U. For low values of U (?4.0 eV) the charge localises in the sub-surface layers occupied in the GGA solution at arbitrary Ti sites, whereas higher values of U (?4.2 eV) predict strong localisation with the excess electronic charge mainly on the two Ti atoms neighbouring the vacancy. The precise charge distribution for these larger U values is found to differ from that predicted by previous hybrid-DFT calculations.     

Study of vacancy on diamond (1 0 0) (2 × 1) surface from first-principles

Structure and energy related properties of neutral and charged vacancies on relaxed diamond (1 0 0) (2 × 1) surface were investigated by means of density functional theory. Calculations indicate that the diffusion of a single vacancy from the top surface layer to the second layer is not energetically favored. Analysis of energies in charged system shows that neutral state is most stable on diamond (1 0 0) (2 × 1) surface. The multiplicity of possible states can exist on diamond (1 0 0) surface in dependence on the surface Fermi level, which supports that surface diffusion of a vacancy is mediated by the change of vacancy charge states. Analysis of density of states shows surface vacancy can be effectively measured by photoelectricity technology.     

High resolution analysis of the rotational levels of the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states of SO2

A high resolution (0.0018 cm⁻¹) Fourier transform instrument has been used to record the spectrum of an enriched ³⁴S (95.3%) sample of sulfur dioxide. A thorough analysis of the ν₂, 2ν₂ − ν₂, ν₁, ν₁ + ν₂ − ν₂, ν₃, ν₂ + ν₃ − ν₂, ν₁ + ν₂ and ν₂ + ν₃ bands has been carried out leading to a large set of assigned lines. From these lines ground state combination differences were obtained and fit together with the existing microwave, millimeter, and terahertz rotational lines. An improved set of ground state rotational constants were obtained. Next, the upper state rotational levels were fit. For the (0 1 0), (1 1 0) and (0 1 1) states, a simple Watson-type Hamiltonian sufficed. However, it was necessary to include explicitly interacting terms in the Hamiltonian matrix in order to fit the rotational levels of the (0 2 0), (1 0 0) and (1 0 1) states to within their experimental accuracy. More explicitly, it was necessary to use a ΔK = 2 term to model the Fermi interaction between the (0 2 0) and (1 0 0) levels and a ΔK = 3 term to model the Coriolis interaction between the (1 0 0) and (0 0 1) levels. Precise Hamiltonian constants were derived for the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states.     

A resonant photoemission study of the Ce and Ce-oxide/Pd(1 1 1) interfaces

We have investigated the Ce 4f electronic states in the Ce/Pd(1 1 1) and Ce-oxide/Pd(1 1 1) systems, using resonant photoemission (Ce 4d → 4f transitions), and XPS to understand Pd-Ce interactions in ultra thin layers of cerium and ceria deposited on Pd(1 1 1). Cerium deposited on Pd(1 1 1) at room temperature forms surface Ce-Pd alloys with Ce rich character, while a Pd rich Ce-Pd alloy is formed by heating to 700 °C. A modification of the chemical state of Ce can also be seen after oxygen exposure. RPES provides evidence that Ce-oxide layers deposited on Pd(1 1 1) have a CeO₂ (Ce⁴⁺) character, however a net contribution of the Ce³⁺ states is also revealed. The Ce³⁺ states have surface character and are accompanied by oxygen vacancies. Heating to 600 °C causes Ce-oxide reduction. A significant shift of Pd 4d-derived states, induced by Pd 4d and Ce 4f hybridization, was observed. The resonant features in the valence band corresponding to Ce⁴⁺, Ce³⁺ and Ce⁰ states have been investigated for various Pd−Ce(CeO_x) coverages.     

FS and FS(OH) defect centers at the MgO(1 0 0) surface: cluster and periodic calculations

We present a model of a new paramagnetic defect center which results from the interaction of atomic hydrogen with the MgO(1 0 0) surface. DFT calculations have been performed using periodic supercells and embedded cluster models where long-range polarization effects are included explicitly. The H atom promotes the creation of an oxygen vacancy (F center) by formation of the F_S⁺(OH⁻) defect where an hydroxyl group is adsorbed near an electron trapped in an oxygen vacancy. This new center has some characteristics similar to those of the classical F_S⁺ centers but a smaller formation energy; furthermore, being globally neutral, it can be treated also with supercell methods.     

Formation of doubly excited He atoms during scattering of He ions from a clean and oxygen covered Ni(1 1 0) surface

The formation of doubly excited states of He atoms during collisions of He²⁺ ions with energies between 60 eV and 1 keV with a Ni(1 1 0) surface is studied via Auger electron spectroscopy. We observe that the electron spectra from autoionization of doubly excited states of 2s², 2s2p, 2p² configurations show a pronounced dependence on the coverage of the target surface with oxygen. For a controlled O₂ adsorption on the Ni(1 1 0) surface we can explain the resulting changes in the electron spectra by the modification of the work function of the target surface. Thermal desorption and dissolution into the bulk of surface contaminations at elevated temperatures provides an alternative interpretation of recent work where the local electron spin polarization of a Ni(1 1 0) surface was deduced from changes in the electron spectra as function of target temperature.     

Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface

The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S⁺ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S⁺ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S⁺ ion bombardment. It is found that the S⁺ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar⁺ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar⁺ ion bombardment, and followed by 50 eV S⁺ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained.     

Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation

The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si¹⁺, Si²⁺, and Si³⁺). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si¹⁺, Si²⁺ and Si³⁺ are the interface states.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

First-principles calculations on electronic structures of Fe-vacancy-codoped TiO2 anatase (1 0 1) surface

The electronic structures of Fe-doped TiO₂ anatase (1 0 1) surfaces have been investigated by all spin-polarized density functional theory (DFT) plane-wave pseudopotential method. The general gradient approximation (GGA)+U (Hubbard coefficient) method has been adopted to describe the exchange-correlation effects. Through the density functional calculations for the formation energies of various configurations, the complex of a substitutional Fe plus an O vacancy was found to form easily in the most range of O chemical potential. The calculated density of the states of the system of Fe-doped surface with a surface oxygen vacancy shows a band gap narrowing from 2.8 to 1.9 eV comparing with the pure surface due to the synergistic effects of surface Fe impurities with O vacancies. The system processes high visible light sensitivity and photocatalytic ability by decreasing extrinsic absorption energy. By comparing the partial DOS of some O and Ti atoms lying in the outermost and bottom layers of Fe-doped surfaces, it was found that the influence of Fe impurities on the electronic structure of the system is localized.     

Theoretical studies on the adsorption and decomposition of H2O on Pd(1 1 1) surface

To provide information about the chemistry of water on Pd surfaces, we performed density functional slab model studies on water adsorption and decomposition at Pd(1 1 1) surface. We located transition states of a series of elementary steps and calculated activation energies and rate constants with and without quantum tunneling effect included. Water was found to weakly bind to the Pd surface. Co-adsorbed species OH and O that are derivable from H₂O stabilize the adsorbed water molecules via formation of hydrogen bonds. On the clean surface, the favorable sites are top and bridge for H₂O and OH, respectively. Calculated kinetic parameters indicate that dehydrogenation of water is unlikely on the clean regular Pd(1 1 1) surface. The barrier for the hydrogen abstraction of H₂O at the OH covered surface is approximately 0.2-0.3 eV higher than the value at the clean surface. Similar trend is computed for the hydroxyl group dissociation at H₂O or O covered surfaces. In contrast, the O-H bond breaking of water on oxygen covered Pd surfaces, H₂O_ad + O_ad → 2OH_ad, is predicted to be likely with a barrier of ∼0.3 eV. The reverse reaction, 2OH_ad → H₂O_ad + O_ad, is also found to be very feasible with a barrier of ∼0.1 eV. These results show that on oxygen-covered surfaces production of hydroxyl species is highly likely, supporting previous experimental findings.     

Some characteristics in the interaction of slow highly charged I ions with a Si(1 1 1) 1 × 1-H surface

We have observed secondary particles and photons emitted from hydrogen terminated Si(1 1 1) 1 × 1 surfaces in the interactions with highly charged ions (HCIs) of iodine having a wide range of charge state, q, from I¹⁷⁺ up to I⁵³⁺, fully stripped iodine ion. A TOF-SIMS (time-of-flight secondary ion mass spectrometry) apparatus has been used to investigate secondary emissions where protons are dominant signals in the TOF spectra. Measured yields of H⁺ and show strong q-dependences, proportional to q^3.4 and q⁵, respectively. For Si⁺, while the yield remains constant for q < ∼ 25, it begins increasing with q^1.4 at higher q (∼25). The mechanism of secondary emissions is briefly discussed.     

The effect of preadsorbed K on the size distribution of Au nanoparticles on TiO2(1 1 0) surface

The effect of K on the morphology of Au nanoparticles deposited on TiO₂(1 1 0) surface is investigated by STM-STS and AES methods. For comparison, the enhanced concentration of oxygen defect sites generated by Ar⁺ bombardment was also studied. It was found that both the K additive and the oxygen defect sites induce a pronounced decrease in the average size of the Au nanoparticles evolved at 320 K. On the clean TiO₂(1 1 0) the average size of Au particles is 4.3 nm at approximately monolayer coverage of gold, while in the presence of K or oxygen vacancies this value decreased to 2.5 nm. In spite of the reduced average diameter detected at room temperature, the mean size of the Au nanoparticles increased significantly from 2.5 nm up to 7 nm on the effect of annealing at 500-700 K for K precoverages of 0.3-1 ML. For the clean and the Ar⁺ pretreated TiO₂(1 1 0) surfaces the mean size of the Au particles changed only slightly on the effect of the same thermal treatments.     

Geometric and electronic structure of positively and negatively poled LiNbO3 (0 0 0 1) surfaces

The effect of ferroelectric poling direction on the structure and electronic properties of the LiNbO₃ (0 0 0 1) surface was characterized. Low energy and reflection high energy electron diffraction indicated that both the positively and negatively poled surfaces were (1 × 1) with no evidence of longer range periodic reconstructions. Low energy ion scattering spectra from both surfaces were dominated by scattering from oxygen atoms. X-ray and ultraviolet photoelectron spectra also showed little difference between the positively and negatively poled surfaces, with the exception of a high binding energy shoulder on the O 1s core level of the negative surface. Exposure of the surfaces to atomic hydrogen caused reduction of the surface Nb rather than an increase in intensity on the high binding energy side of the O 1s peak, indicating that the shoulder on the O 1s peak on the negative surface was not due to surface hydroxyl groups. Temperature programmed desorption measurements indicated that the nearly stoichiometric LiNbO₃ samples were susceptible to loss of Li₂O starting at temperatures as low as 500 K, independent of the poling direction. An adatom/vacancy model is proposed in which oxygen ad-anions accumulate on one side of the crystal while oxygen anion vacancies are created on the opposite surface. This model can explain the apparent oxygen termination of both surfaces and the observed (1 × 1) periodicity of the surfaces, and also effectively screens the thickness dependent electric field associated with the polar orientation of the crystal.     

The investigation of room temperature ferromagnetism in (1 0 0) oriented BaNb2O6 PLD films on LaAlO3 (1 0 0) substrate

(1 0 0) oriented BaNb₂O₆ films have been successfully grown on LaAlO₃ (1 0 0) substrate at 750 °C or 450 °C in vacuum by pulsed laser deposition. The deposited BaNb₂O₆ PLD films exhibit room-temperature ferromagnetism. Ab initio calculations demonstrate that stoichiometric BaNb₂O₆ and that with barium vacancy are nonmagnetic, while oxygen and niobium vacancy can induce magnetism due to the spin-polarization of Nb s electrons and O p electrons respectively. Moreover, ferromagnetic coupling is energetically more favorable when two Nb/O vacancies are located third-nearest-neighbored. The observed room temperature ferromagnetism in BaNb₂O₆ films should be mainly induced by oxygen vacancies introduced during vacuum deposition, with certain contribution by Nb vacancies.     

Valence band and surface core-level shift studies of the oxygen-induced p(3 × 1) reconstruction of the W(1 0 0) surface

Using synchrotron radiation, W 4f_7/2 and valence-band (VB) photoelectron spectroscopy was used to study the oxidation states of the p(3 × 1) reconstructed surface of W(1 0 0) produced by oxygen adsorption at 1500 K. The W 4f_7/2 study showed two features at 0.40 and 1.50 eV higher binding energies relative to the bulk feature which represent shifts to lower binding energies compared to the W 4f_7/2 features of the as-grown oxygen films on W(1 0 0). Co-existence of these features is a characteristic of the formation of the p(3 × 1) structure. The VB studies of this system and as-grown oxygen films at room temperature (RT) showed an oxygen-induced feature for the p(3 × 1) structure for which the peak maximum had shifted by 0.9 eV to higher binding energies compared to the as-grown films. The direction of shifts in the W 4f_7/2 and VB spectra for the p(3 × 1) structure confirmed the reduction of the charge transfer from W to oxygen compared to the as-grown films. A study of the VB changes with photon energy shows that the main component of the oxygen-induced feature in the p(3 × 1) VB at 6.6 ± 0.2 eV is related to a hybridized state between W 5d and O 2p electrons.     

Structural and electrical analysis of S ion bombarded p-InP(1 0 0)

The chemical state of sulfur and surface structure on low-energy S⁺ ion-treated p-InP(1 0 0) surface have been investigated by high-resolution X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). S⁺ ion energy over the range of 10-100 eV was used to study the effect of ion energy on surface damage and the process of sulfur passivation on p-InP(1 0 0) by S⁺ ion beam bombardment. It was found that sulfur species formed on the S⁺ ion-treated surface. The S⁺ ions with energy above 50 eV were more effective in formation of In-S species, which assisted the InP surface in reconstruction into an ordered (1 × 1) structure upon annealing. After taking into account physical damage due to the process of ion bombardment, we found that 50 eV was the optimal ion energy to form In-S species in the sulfur passivation of p-InP(1 0 0). The subsequent annealing process removed donor states that were introduced during the ion bombardment of p-InP(1 0 0). Results of theoretical simulations by Transport of Ions in Materials (TRIM) are in accordance with those of experiments.     

A density functional theory study of formaldehyde adsorption and oxidation on CeO2(1 1 1) surface

The effects of different oxygen species and vacancies on the adsorption and oxidation of formaldehyde over CeO₂(1 1 1) surface were systematically investigated by using density functional theory (DFT) method. On the stoichiometric CeO₂(1 1 1) surface, the C-H bond rupture barriers of chemisorbed formaldehyde are much higher than that of formaldehyde desorption. On the reduced CeO₂(1 1 1) surface, the energy barriers of C-H bond ruptures are less than those on the stoichiometric CeO₂(1 1 1) surface. If the C-H bond rupture occurs, CO and H₂ form quickly with low energy barriers. When O₂ adsorbs on the reduced (1 1 1) surface (O₂/O_v species), the C-H bond rupture barriers of formaldehyde are greatly reduced in comparison with those on the stoichiometric CeO₂(1 1 1) surface. If O₂ adsorbs on oxygen vacancy at sub-layer surface, its oxidative roles on formaldehyde are much similar to that of O₂/O_v species.