Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.     

Magnetic properties of Mn doped BN compound

Electronic and magnetic properties of diluted B_1−xMn_xN alloys are calculated by means of the full potential linearized augmented plane wave (FP-LAPW) method and the generalized gradient approximation (GGA). A half-metallic state is predicted for a composition of 6.25%. The spin majority being metallic and minority being semiconducting. We found a total magnetic moment of 2 μ_B (Bohr-magnetons) per supercell, in agreement with the half-metallic behaviour. The main contribution of the cell magnetic moment is localized at the transition metal site Mn, with a local moment of 1.24 μ_B.     

Electronic and magnetic behaviors of graphene with 5d series transition metal atom substitutions: A first-principles study

The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 μ_B, 2 μ_B, 1 μ_B and 0.99 μ_B magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices.     

Investigations of cobalt and carbon codoping in gallium nitride for spintronic applications

Extensive theoretical investigations have been carried out to study the ferromagnetic properties of transition metal doped wurtzite GaN using the Tight Binding Linear Muffin-tin Orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in cobalt doped GaN when one gallium is replaced by cobalt in a 3×3×2 supercell of GaN, which gives rise to a cobalt concentration of 2.77%. The system is half-metallic with a magnetic moment of 4.0 μ_B. When Co is bonded with one carbon, there is a drastic decrease in magnetic moment and the system becomes metallic. When Co dimer is introduced via nitrogen which corresponds to the Co concentration of 5.5% the magnetic moment is 3.99 μ_B and the system is half-metallic. Same trend is observed when Co is bonded via nitrogen with unequal distance. When cobalt dimer is formed via carbon, the moment becomes 2.95 μ_B and it shows metallic character. For dimer via carbon with unequal distance, the moment is 3.0 μ_B and the system becomes semiconductor. For higher percentage of cobalt dopant the system shows metallic character. C and Co doped GaN samples have been synthesized experimentally and characterized with X-ray diffraction, transmission electron microscopy, micro-Raman and superconducting quantum interface device measurements. The observed results are correlated with the theoretical studies.     

Palladium atoms and its dimers adsorbed on graphene: First-principles study

In this work we have studied the stabilty, electronic and magnetic properties of Pd adatoms and dimers adsorbed on graphene system using first-principles calculations. The adsorption energies for Pd adatom and its dimer have been found to range from −0.986 to −1.135 eV and −0.165 to −1.101 eV, respectively, which signify stable configuration and future utilization of this system in catalysis. A shift but no separation of π and π^? bands at the Dirac point has been observed in case of Pd dimer adsorption in perpendicular configuration, which can be accounted for the breaking of symmetry of the graphene structure due to adsorption. 64-68% spin polarization P(E_F) and 1.944-1.990 μ_B magnetic moment have been observed for Pd dimers adsorbed on graphene in perpendicular configuration for different sites. The unequal values of partial density of states for 4d and 5s orbitals of Pd dimers at Fermi level have been found to be responsible for the generation of high spin polarization.     

First-principles study on the half-metallicity of zinc-blende CrP(1 1 0) surface

We have investigated the half-metallicity and magnetism at the (1 1 0) surface of CrP by using the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). From the calculated local density of states (LDOS), we found that the (1 1 0) surface of CrP preserves the half-metallicity, but the band gaps (∼1.1 eV) of the minority states for the surface Cr and P atoms are much reduced from the bulk value (∼1.9 eV). The magnetic moment of the P is coupled antiferromagnetically to that of the Cr. The magnetic moment of surface Cr atom is calculated to be 3.31μ_B which is increased by 10% compared to the bulk value, 3.00μ_B.     

Magnetic ordering above room temperature in the sigma-phase of Fe66V34

Magnetic properties of four sigma-phase Fe_100−xV_x samples with 34.4?x?55.1 were investigated by Mössbauer spectroscopy and magnetic measurements in the temperature interval 4.2-300 K. Four magnetic quantities, viz. hyperfine field, Curie temperature, magnetic moment and susceptibility, were determined. The sample containing 34.4 at% V was revealed to exhibit the largest values found up to now for the sigma-phase for average hyperfine field, 〈B〉=12.1 T, average magnetic moment per Fe atom, 〈μ〉=0.89 μ_B, and Curie temperature, T_C=315.3 K. The quantities were shown to be strongly correlated with each other. In particular, T_C is linearly correlated with 〈μ〉 with a slope of 406.5 K/μ_B, as well as 〈B〉 is so correlated with 〈μ〉, yielding 14.3 T/μ_B for the hyperfine coupling constant.     

First-principles study of structural, electronic and magnetic properties in Cd1−xFexS diluted magnetic semiconductors

In this paper, we report theoretical investigations of structural, electronic and magnetic properties of ordered dilute ferromagnetic semiconductors Cd_1−xFe_xS with x=0.25, 0.5 and 0.75 in zinc blende (B3) phase using all-electron full-potential linear muffin tin orbital (FP-LMTO) calculations within the density functional theory and the generalized gradient approximation. The analysis of band structures, density of states, total energy, exchange interactions and magnetic moments reveals that both the alloys may exhibit a half-metallic ferromagnetism character. The value of calculated magnetic moment per Fe impurity atom is found to be 4 μ_B. Moreover, we found that p-d hybridization reduces the local magnetic moment of Fe from its free space charge value of 4 μ_B and produces small local magnetic moments on Cd and S sites.     

Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2

We perform first-principles calculation to investigate electronic and magnetic properties of Co-doped WSe₂ monolayer with strains from −10% to 10%. We find that Co can induce magnetic moment about 0.894 μ_B, the Co-doped WSe₂ monolayer is a magnetic semiconductor material without strain. The doped system shows half-metallic properties under tensile strain, and the largest half-metal gap is 0.147 eV at 8% strain. The magnetic moment (0.894 μ_B) increases slightly from 0% to 6%, and jumps into about 3 μ_B at 8% and 10%, which presents high-spin state configurations. When we applied compressive strain, the doped system shows a half-metallic feature at −2% strain, and the magnetic moment jumps into 1.623 μ_B at −4% strain, almost two times as the original moment 0.894 μ_B at 0% strain. The magnetic moment vanishes at −7% strain. The Co-doped WSe₂ can endure strain from −6% to 10%. Strain changes the redistribution of charges and magnetic moment. Our calculation results show that the Co-doped WSe₂ monolayer can transform from magnetic semiconductor to half-metallic material under strain.     

Electronic structure and magnetic properties of the N monodoping and (Li, N)-codoped ZnO

Using first-principles calculations based on density functional theory, we investigated systematically the electronic structures and magnetic properties of N monodoping and (Li, N) codoping in ZnO. The results indicate that monodoping of N in ZnO favors a spin-polarized state with a magnetic moment of 0.95 μ_B per supercell and the magnetic moment mainly comes from the unpaired 2p electrons of N and O atoms. In addition, it was found that monodoping of N in ZnO is a weak ferromagnet and it is the spin-polarized O atoms that mediate the ferromagnetic exchange interaction between the two N atoms. Interestingly, by Li substitutional doping at the cation site (Li_Zn), the ferromagnetic stability can be increased significantly and the formation energy can be evidently reduced for the defective system. Therefore, we think that the enhancement of ferromagnetic stability should be attributed to the accessorial holes and the lower formation energy induced by Li_Zn doping.     

The change in the character of phase transition with nickel in the Ho(Co,Ni)2 compounds

The series Ho(Co_1-cN_c)₂ has been investigated in the composition range c?0.15 by spin-echo NMR of ¹⁶⁵Ho and by magnetic measurements. From NMR data a value of (9.5±0.1)μ_B is estimated for holmium in HoCo₂. Magnetisation measurements on the same compound give (7.9±0.1)μ_B/fu. An assumption of 0.8μ_B for the cobalt moment aligned antiparallel to that of holmium leads to a value of 9.5μ_B for holmium in agreement with the value estimated from NMR. The substitution of nickel for cobalt causes a rapid fall in both the hyperfine field, and the ordering temperatures, while the molecular moment shows a simultaneous rise. These are attributed to a rapid fall in the cobalt moment which leads to a bootstrap process involving the strength of the exchange field and the magnitude of the cobalt moment. Nickel substitution also leads to a change in the character of the magnetic phase transition. Initially first order, this transition becomes second order on exceeding ≈ 9 at% Ni.     

Magnetic properties of Ni doped gallium nitride with vacancy induced defect

Investigations have been carried out to study the ferromagnetic properties of transition metal (TM) doped wurtzite GaN from first principle calculations using tight binding linear muffin-tin orbital (TBLMTO) method within the density functional theory. The present calculation reveals ferromagnetism in nickel doped GaN with a magnetic moment of 1.13 μ_B for 6.25% of Ni doping and 1.32 μ_B for 12.5% of nickel doping, there is a decrease of magnetic moment when two Ni atoms are bonded via nitrogen atom. The Ga vacancy (V_Ga) induced defect shows ferromagnetic state. Here the magnetic moment arises due to the tetrahedral bonding of three N atoms with the vacancy which is at a distance of 3.689 Å and the other N atom which is at a distance of 3.678 Å .On the other hand the defect induced by N vacancy (V_N) has no effect on magnetic moment and the system shows metallic character. When Ni is introduced into a Ga vacancy (V_Ga) site, charge transfer occur from the Ni ‘d’ like band to acceptor level of V_Ga and formed a strong Ni–N bond. In this Ni–V_Ga complex with an Ni ion and a Ga defect, the magnetic moment due to N atom is 0.299 μ_B .In case of Ni substitution in Ga site with N vacancy, the system is ferromagnetic with a magnetic moment of 1 μ_B.     

Ab initio studies of isolated hydrogen vacancies in graphane

We present a density functional study of various hydrogen vacancies located on a single hexagonal ring of graphane (fully hydrogenated graphene) considering the effects of charge states and the position of the Fermi level. We find that uncharged vacancies that lead to a carbon sublattice balance are energetically favorable and are wide band gap systems just like pristine graphane. Vacancies that do create a sublattice imbalance introduce spin polarized states into the band gap, and exhibit a half-metallic behavior with a magnetic moment of 1.00 μ_B per vacancy. The results show the possibility of using vacancies in graphane for novel spin-based applications. When charging such vacancy configurations, the deep donor (+1/0) and deep acceptor (0/−1) transition levels within the band gap are noted. We also note a half-metallic to metallic transition and a significant reduction of the induced magnetic moment due to both negative and positive charge doping.     

Magnetism in boron nitride monolayer: Adatom and vacancy defect

Using the full potential linearized augmented plane wave (FLAPW) method, we have investigated the adatom or vacancy defect induced magnetic properties of hexagonal boron nitride (h-BN) monolayer. It has been observed that the N vacancy defect has no influence on the magnetic property of h-BN, whereas the B vacancy defect caused spin polarization in the nearest three N atoms. The total magnetic moment is about 0.87 μ_B within muffin-tin radius (0.29 μ_B per N atom) and the spin polarized N atoms show metallic feature. In the presence of B adatom defect, we have obtained rather weak spin polarization about 0.1 μ_B. However, the sizable magnetic moment of 0.38 μ_B appears in N adatom defect. Both B and N adatom defect systems preserve very close to semiconducting feature with a finite band gap. We have found that the DOS and the XMCD spectral shapes are strongly dependent on the defect type existing in the h-BN monolayer and this finding may help reveal the origin of magnetism in the h-BN layer if one performs surface sensitive experiment such as spin polarized scanning tunneling microscopy or XMCD measurement in the near future.     

Tuning magnetism of monolayer GaN by vacancy and nonmagnetic chemical doping

In view of important role of inducing and manipulating the magnetism in 2D materials for the development of low-dimensional spintronic devices, the magnetism of GaN monolayer with Ga vacancy and nonmagnetic chemical doping are investigated using first-principles calculations. It is found that pure GaN monolayer has graphene-like structure and is nonmagnetic. While, a neutral Ga vacancy can induce 3 μ_B intrinsic magnetic moment, localized mainly on the neighboring N atoms. Interestingly, after one Mg or Si atom doping in g-GaN with Ga vacancy, the magnetic moment can be modified to 4 μ_B or 2 μ_B respectively due to the change in hole number. Meantime, Mg-doped g-GaN with Ga vacancy shows half-metal character. With the increasing of doping concentrations, the magnetic moment can be further tuned. The results are interesting from a theoretical point of view and may open opportunities for these 2D GaN based materials in magnetic devices.     

Magnetic structure of the Sm5Ge4-type Tb2Ti3Ge4

The orthorhombic Sm₅Ge₄-type Tb₂Ti₃Ge₄ shows square modulated non-collinear magnetic ordering with wave vector K=[±1/3, 1/2, 1/2] at 2 K. The terbium magnetic moments lie in the bc plane and magnetic moment value of 7.5(2) μ_B/Tb is obtained at 2 K.     

First-principles investigations of Cr doping effects on electronic structure and magnetic properties in Sr2FeReO6

The electronic structures and magnetic properties of double perovskites Sr₂Fe_1−xCr_xReO₆ (x=0.0, 0.25, 0.5, 0.75, 1.0) have been studied within the local spin density approximation (LSDA) and LSDA+U schemes. The calculated results reveal that with increasing Cr content the cell volume shrinks 2.61%; the Fe/Cr site magnetic moment decreases while the Re-site moment increases. The total spin magnetic moment linearly decreases with the Cr doping from 3.00μB for x=0.00 down to 1.00μB for x=1.00 per formula unit. The magnetic coupling constants increase with increasing x. The electronic structure calculations indicate that the electronic concentration in the Re spin-down subband slightly increases resulting from the increase of bonding-antibonding interaction between the localised and the delocalised states in spin-down band; the coupling of O-2p_↑ and transition-metal-3d_↑ is substantially enhanced with the Cr doping. We discuss the origin of the anomalously high TC of Cr-doped Sr₂FeReO₆ compounds in terms of band hybridization effects.     

Half-metallic properties in rocksalt and zinc-blende M N (M=Na, K): A first-principles study

Pseudopotentials and plane-wave basis set method is used to investigate the electronic structure and magnetic properties for state-of-the-art zinc-blende and rocksalt M N (M=K, Na) alloys. We find that these compounds exhibit half-metallic characters with an integer magnetic moment of 2.00μ_B. The half-metallic properties result from a fully spin-polarization of s and p states. The origin of energy gap mainly comes from the hybridization both s and p states. Total energies calculations indicate the rocksalt phase is lower in energy than the zinc-blende one. The difference of total energy are about 0.035 Ry per formula unit for KN and NaN, respectively. For these compounds, Slater-Pauling curve M_t=(Z_t−4) (in μ_B unit) is obeyed between valence electrons and total magnetic moment. Meanwhile, we also find the preservation of half metallic characters when the lattice parameter is moderate compressed.     

Defective graphene and nanoribbons: electronic,magnetic and structural properties

We make use of first-principles calculations, based on the density functional theory(DFT), to investigate the alterations at the structural, energetic, electronic andmagnetic properties of graphene and zigzag graphene nanoribbons (ZGNRs) due to theinclusion of different types of line and punctual defects. For the graphene it is foundthat the inclusion of defects breaks the translational symmetry of the crystal withdrastic changes at its electronic structure, going from semimetallic to semiconductor andmetallic. Regarding the magnetic properties, no magnetization is observed for thedefective graphene. We also show that the inclusion of defects at ZGNRs is a good way tocreate and control pronounced peaks at the Fermi level. Furthermore, defective ZGNRsstructures show magnetic moment by supercell up to 2.0μ_B. For the non defectiveZGNRs is observed a switch of the magnetic coupling between opposite ribbon edges from theantiferromagnetic to the ferrimagnetic and ferromagnetic configurations.     

Field dependence of spin and orbital moments of Fe in L10 FePt magnetic thin films

The field dependence of spin and orbital magnetic moments of Fe in L1₀ FePt magnetic thin films was investigated using X-ray magnetic circular dichroism (XMCD). The spin and orbital moments were calculated using the sum rules; it was found that the spin and orbital moment of Fe in L1₀ FePt films are ∼2.5 and 0.2 μ_B, respectively. The relative XMCD asymmetry at Fe L₃ peak on the dependence of applied field suggested that the majority magnetic moment of L1₀ FePt films resulted from Fe.