Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces

Distortions of the sqrt[3]x sqrt[3] Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, Q, related to the surface band occupancy. A novel understanding of the (3 x 3)-1U ("1 up, 2 down") and 2U ("2 up, 1 down") distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distortions. Negative strain attracts pseudocharge from the valence band causing first a (3 x 3)-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a (sqrt[3] x sqrt[3])-3U ("all up") state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.     

Surface soft phonon and the sqrt[3] x sqrt[3] <--> 3x3 phase transition in Sn/Ge(111) and Sn/Si(111)

Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.     

Origin of anomalous electronic structures of epitaxial graphene on silicon carbide

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasiperiodic 6x6 domain pattern emerges out of a larger commensurate 6 sqrt [3] x 6 sqrt [3]R30 degrees periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues in epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.     

Role of long range interaction in oxygen superstructure formation on Cu(001) and Ni(001)

On the basis of electronic structure calculations, we show that the long range Coulomb interaction provides the driving mechanism for oxygen overlayer formation on Cu(001). We illustrate that this interaction in the precursor c(2 x 2) phase induces a missing row reconstruction of Cu(001), and leads to the (2sqrt[2] x sqrt[2])R45 degrees O structure, which has strong covalent pO-dCu coupling. For the c(2 x 2)O overlayer on Ni(001) and Cu(001), we show that pO-dNi bonding is larger than pO-dCu and serves to neutralize the perturbation of the Coulomb interaction induced by the O overlayer. Consequently, c(2 x 2)O/Ni(001)) is stable while c(2 x 2)O/Cu(001) exists only in limited environments.     

Low temperature disordered phase of alpha-Pb/Ge(111)

A new structural phase transition has been observed at low temperature for the one-third of a monolayer (alpha phase) of Pb on Ge(111) using a variable-temperature scanning tunneling microscope. The well-known (sqrt[3] x sqrt[3])R30 degrees to (3 x 3) transition is accompanied by a new structural phase transition from (3 x 3) to a disordered phase at approximately 76 K. The formation of this "glasslike" phase is a consequence of competing interactions on different length scales.     

Diffractive dijet production at sqrt[s] = 630 and 1800 GeV at the Fermilab Tevatron

We report a measurement of the diffractive structure function F(D)(jj) of the antiproton obtained from a study of dijet events produced in association with a leading antiproton in pp collisions at sqrt[s] = 630 GeV at the Fermilab Tevatron. The ratio of F(D)(jj) at sqrt[s] = 630 GeV to F(D)(jj) obtained from a similar measurement at sqrt[s] = 1800 GeV is compared with expectations from QCD factorization and other theoretical predictions. We also report a measurement of the xi ( x-Pomeron) and beta ( x of parton in Pomeron) dependence of F(D)(jj) at sqrt[s] = 1800 GeV. In the region 0.035相似文献   

How to observe high-dimensional two-photon entanglement with only two detectors

We propose a novel setup to investigate the entanglement of orbital angular momentum states living in a high-dimensional Hilbert space. We incorporate noninteger spiral phase plates in spatial analyzers, enabling us to use only two detectors. The two-photon states that are produced are not confined to a 2 x 2-dimensional Hilbert space, and the setup allows the probing of correlations in a high-dimensional space. For the special case of half-integer spiral phase plates, we predict that the Clauser-Horne-Shimony-Holt-Bell parameter S is larger than achievable for two qubits (S=2 sqrt[2]), namely, S=31 / 5.     

Surface phase transitions induced by electron mediated adatom-adatom interaction

We propose that the indirect adatom-adatom interaction mediated by the conduction electrons of a metallic surface is responsible for the sqrt[3]xsqrt[3]<==>3x3 structural phase transitions observed in Sn/Ge (111) and Pb/Ge (111). When the indirect interaction overwhelms the local stress field imposed by the substrate registry, the system suffers a phonon instability, resulting in a structural phase transition in the adlayer. Our theory is capable of explaining all the salient features of the sqrt[3]xsqrt[3]<==>3x3 transitions observed in Sn/Ge (111) and Pb/Ge (111), and is in principle applicable to a wide class of systems whose surfaces are metallic before the transition.     

Flat bands and Wigner crystallization in the honeycomb optical lattice

We study the ground states of cold atoms in the tight-binding bands built from p orbitals on a two dimensional honeycomb optical lattice. The band structure includes two completely flat bands. Exact many-body ground states with on-site repulsion can be found at low particle densities, for both fermions and bosons. We find crystalline order at n=1/6 with a sqrt[3] x sqrt[3] structure breaking a number of discrete lattice symmetries. In fermionic systems, if the repulsion is strong enough, we find the bonding strength becomes dimerized at n=1/2. Experimental signatures of crystalline order can be detected through the noise correlations in time of flight experiments.     

Adatom-vacancy mechanisms for the C6)/Al111-(6 x 6) reconstruction

The irreversible (6x6) reconstruction of the C(60)/Al(111) system from the (2sqrt[3]x2sqrt[3])R30 degrees phase is studied by first-principles techniques. We find that C60 binds optimally to the surface if an Al vacancy is created directly underneath. The removed Al atoms form a (6x6) array of ad-dimers in the interstices below the C60 overlayer, to which they strongly bind. This spontaneous local process, rather than the compression state of the unreconstructed C60 overlayer, explains why one molecule out of three protrudes from the surface upon reconstruction.     

Phonon softening,chaotic motion,and order-disorder transition in Sn/Ge(111)

The phonon dynamics of the Sn/Ge(111) interface is studied using high-resolution helium atom scattering and first-principles calculations. At room temperature we observe a phonon softening at the Kmacr; point in the (sqrt[3]xsqrt[3])R30 degrees phase, associated with the stabilization of a (3x3) phase at low temperature. That phonon band is split into three branches in the (3x3) phase. We analyze the character of these phonons and find out that the low- and room-temperature modes are connected via a chaotic motion of the Sn atoms. The system is shown to present an order-disorder transition.     

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111)

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.     

Sn/Ge(111) surface charge-density-wave phase transition

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1 / 3 monolayer of Sn on Ge(111) in both the room-temperature (sqrt[3]xsqrt[3] )R30 degrees phase and the low-temperature ( 3x3) charge-density-wave phase. The results reveal a gap opening around the ( 3x3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting. A highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the ( 3x3) symmetry.     

Measurement of the top quark p(T) distribution

We have measured the p(T) distribution of top quarks that are pair produced in pp collisions at sqrt[s] = 1.8 TeV using a sample of tt decays in which we observe a single high- p(T) charged lepton, a neutrino, and four or more jets. We use a likelihood technique that corrects for the experimental bias introduced due to event reconstruction and detector resolution effects. The observed distribution is consistent with the standard model prediction. We use these data to place limits on the production of high- p(T) top quarks suggested in some models of anomalous top quark pair production.     

Persistent supersolid phase of hard-core bosons on the triangular lattice

We study hard-core bosons with unfrustrated hopping (t) and nearest neighbor repulsion (U) (spin S=1/2 XXZ model) on the triangular lattice. At half filling, the system undergoes a zero temperature (T) quantum phase transition from a superfluid phase at small U to a supersolid at Uc approximately 4.45 in units of 2t. This supersolid phase breaks the lattice translation symmetry in a characteristic sqrt[3] x square root of 3 pattern, and is remarkably stable--indeed, a smooth extrapolation of our results indicates that the supersolid phase persists for arbitrarily large U/t.     

Determination of the Sn 4d line shape of the Sn/Ge(111) radical3 x radical3 and 3x3 surfaces

The Sn 4d line shapes of the Sn/Ge(111) sqrt[3]xsqrt[3] and 3x3 surfaces are currently under debate. By employing LEED, core-level, and valence band spectroscopy we have been able to determine the correct Sn 4d line shapes for these surfaces. Contrary to a recent study we conclude that the majority of the earlier reports present line shapes close to the correct ones. At 70 K we identify three 4d components in the 3x3 spectrum, two of which are identified with the two types of Sn atoms in the 3x3 cell. The third component is attributed to Sn atoms surrounding Ge substitutional defects.     

Cross sections and transverse single-spin asymmetries in forward neutral-pion production from proton collisions at sqrt[s]=200 GeV

Measurements of the production of forward high-energy pi(0) mesons from transversely polarized proton collisions at sqrt[s]=200 GeV are reported. The cross section is generally consistent with next-to-leading order perturbative QCD calculations. The analyzing power is small at x(F) below about 0.3, and becomes positive and large at higher x(F), similar to the trend in data at sqrt[s]< or =20 GeV. The analyzing power is in qualitative agreement with perturbative QCD model expectations. This is the first significant spin result seen for particles produced with p(T)>1 GeV/c at a polarized proton collider.     

A nearly universal critical conductivity for semiconductor-metal alloys

Classical ionized impurity scattering is employed to calculate the conductivity at and in the vicinity of the critical point. The result sigma(iis)(x = x(c),T) = Asqrt[T], closely given by e(2)/Planck's over 2pilambda(dB) with the de Broglie wavelength lambda(dB) = h/(2m(*)kT)(1/2) in the nondegenerate regime epsilon(F)x(c), T) might also explain the linear scaling behavior sigma(x, T)-Asqrt[T] = sigma(0)(x/x(0)-1).     

Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer

Temperature-dependent electron transport in a metallic surface superstructure, Si(111)sqrt[3] x sqrt[3]-Ag, was studied by a micro-four-point probe method and photoemission spectroscopy. The surface-state conductivity exhibits a sharp transition from metallic conduction to strong localization at approximately 150 K. The metallic regime is due to electron-phonon interaction while the localization seemingly originates from coherency of electron waves. Random potential variations, caused by Friedel oscillations of surface electrons around defects, likely induce strong carrier localization.     

Reverse self-assembly: (111)-oriented gold crystallization at alkylthiol monolayer templates

It has long been known that thiol-terminated molecules self-assemble as commensurate monolayers on Au(111) surfaces. By spreading floating octadecanethiol monolayers on aqueous solutions of chloroauric acid (HAuCl4) and using x rays to reduce the gold ions as well as to probe the structure, we have observed the nucleation of (111)-oriented Au nanoparticles at thiol surfaces. This process may be similar to the formation of biogenic gold by bacteria. The thiol monolayer acts as a "soft template," changing its structure as Au crystals form so that there is a sqrt[3]×sqrt[3] commensurate relationship.