Contact potential barriers and characterization of Ag-doped composite TiO2 nanotubes

Ag-doping TiO₂ composite nanotubes (Ag-TNTs) were synthesized by alkaline fusion followed by hydrothermal treatment. The microstructure and morphology of the materials were characterized by XRD, TEM, XPS, SPS (surface photovoltage spectroscopy), FISPS (electric field-induced surface photovoltage spectroscopy) and Raman spectroscopy. First-principles calculations based on density-functional theory (DFT) showed the formation of several impurity levels near the top of the valence band in the band gap (E_g) of rutile TiO₂ due to Ag doping. A “double junction” is proposed, involving a Schottky junction and p–n junction (denoted as “Ag-p–n junction”) occurring between the Ag particles and the nanotube surface, as well as forming inside TiO₂ nanotubes, respectively. The strongly built-in electric field of the junctions promotes the separation of photo-holes and photoelectrons, enhancing the photocatalytic efficiency. XRD results indicated that the composite Ag-TNTs exist as a mixture of anatase and rutile phases. XPS results showed that Ti⁴⁺ is the primary state of Ti. Raman spectral analysis of Ag-TNTs revealed the presence of a new peak at 271 cm⁻¹. The red-shift of the absorption light wavelength of Ag-TNTs was 0.16 eV (20 nm) due to a considerable narrowing of E_g by the existing impurity levels.     

Inelastic neutron scattering on iron-based superconductor BaFe2(As,P)2

Inelastic neutron scattering has been performed on powder sample of an iron-based superconductor BaFe₂(As_0.65P_0.35)₂ with superconducting transition temperature (T_c) = 30 K, whose superconducting (SC) order parameter is expected to have line node. In the normal state, constant-E scan of dynamical structure factor, S(Q, E), exhibits a peak structure centered at momentum transfer Q ～ 1.20 Å^?1, corresponding to antiferromagnetic wave vector. Below T_c, the redistribution of the magnetic spectral weight takes place, resulting in the formation of a peak at E ～ 12 meV and a gap below 6 meV. The enhanced magnetic peak structure is ascribed to the spin resonance mode, evidencing sign change in the SC order parameter similar to other iron-based high-T_c superconductors. It suggests that fully-gapped s_± symmetry dominates in this superconductor, which gives rise to high-T_c (=30 K) despite the nodal symmetry.     

Transport Barkhausen-like noise in uniaxially pressed Bi1.65Pb0.35Sr2Ca2Cu3O10+δ ceramic samples

We report on the detection of the transport Barkhausen-like noise (TBN) in polycrystalline samples of Bi_1.65Pb_0.35Sr₂Ca₂ Cu₃O_10+δ (Bi-2223) which were subjected to different uniaxial compacting pressures. The transport Barkhausen-like noise was measured when the sample was subjected to an ac triangular-shape magnetic field (f ～ 1 Hz) with maximum amplitude B_max ≈ 5.5 mT, in order to avoid the flux penetration within the superconducting grains. Analysis of the TBN signal, measured for several values of excitation current density, indicated that the applied magnetic field in which the noise signal first appears, B_a(t_i), is closely related to the magnetic-flux pinning capability of the material. The combined results are consistent with the existence of three different superconducting levels within the samples: (i) the superconducting grains; (ii) the superconducting clusters; and (iii) the weak-links. We finally argue that TBN measurements constitute a powerful tool for probing features of the intergranular transport properties in polycrystalline samples of high-T_c superconductors.     

Device linearity improvement and current enhancement utilizing high-to-low doping-channel FETs

We report device linearity improvement and current enhancement in both a heterostructure FET (HFET) and a camel-gate FET (CAMFET) using InGaAs/GaAs high-low and GaAs high-medium-low doped channels, respectively. In an HFET, a low doped GaAs layer was employed to build an excellent Schottky contact. In a GaAs CAMFET, a low doped layer together withn⁺andp⁺layers formed a high-performance majority camel-diode gate. Both exhibit high effective potential barriers of >1.0 V and gate-to-drain breakdown voltages of >20.0 V (atI_g=1.0 mA mm⁻¹). A thin, high doped channel was used to enhance current drivability and to improve the transconductance linearity. A 2×100 μm²HFET had a peak transconductance of 230 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. The device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 200 to 800 mA mm⁻¹. A 1.5×100 μm²CAMFET had a peak transconductance of 220 mS mm⁻¹and a current density greater than 800 mA mm⁻¹. Similarly, the device had a transconductance of more than 80 percent of the peak value over a wide drain current range of 160 to 800 mA mm⁻¹. The improvement of device linearity and the enhancement of current density suggest that high-to-low doped-channel devices for both an HFET and a CAMFET are suitable for high-power large signal circuit applications.     

Optical and Raman spectroscopy studies on Fe-based superconductors

A brief review of optical and Raman studies on the Fe-based superconductors is given, with special emphasis on the competing phenomenon in this system. Optical investigations on ReFeAsO (Re = rare-earth element) and AFe₂As₂ (A = alkaline-earth metal) families provide clear evidence for the gap formation in the broken symmetry states, including the partial gaps in the spin-density wave states of parent compounds, and the pairing gaps in the superconducting states for doped compounds. Especially, the superconducting gap has an s-wave pairing lineshape in hole-doped BaFe₂As₂. Optical phonons at zone center detected by Raman and infrared techniques are classified for several Fe-based compounds. Related issues, such as the electron–phonon coupling and the effect of spin-density wave and superconducting transitions on phonons, are also discussed. Meanwhile, open questions including the T-dependent mid-infrared peak at 0.6–0.7 eV, electronic correlation, and the similarities/differences between high-T_c cuprates and Fe-based superconductors are also briefly discussed. Important results from other experimental probes are compared with optical data to better understand the spin-density wave properties, the superconductivity, and the multi-band character in Fe-based compounds.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

Spectroscopic studies of the structural properties of Ni substituted spinel LiMn2O4

Microstructure and local structure of spinel LiNi_xMn_2 − xO₄ (x = 0, 0.1 and 0.2) were studied using X-ray diffraction (XRD) and a combination of X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge spectroscopy (XANES) and Raman scattering with the aim of getting a clear picture of the local structure of the materials responsible for the structural stability of LiNi_xMn_2 − xO₄. XRD study showed that Ni substitution caused the changes of the materials’ microstructure from the view of the lattice parameter, mean crystallite size, and microstrain. XPS and XANES studies showed the Ni oxidation state in LiNi_xMn_2 − xO₄ was larger than + 2, and the Mn oxidation state increased with Ni substitution. The decrease of the intensity of the 1s → 4p_z shakedown transition on the XANES spectra indicated that Ni substitution suppressed the tetragonal distortion of the [MnO₆] octahedron. The Mn(Ni)–O bond in LiNi_xMn_2 − xO₄, which is stronger than the Mn–O bond in LiMn₂O₄ was responsible for the blue shift of the A_1g Raman mode and could enhance the structural stability of the [Mn(Ni)O₆] octahedron.     

Predicted new electrodynamic effect for thin films of layered cuprates—surface Hall currents induced by electric inductionD ⊥ film

A new electrodynamic effect in layered cuprates is predicted—surface Hall currentsj^{(2 D)} ∝ D_n × B_tinduced in thin (d_film ⪡ λ_London) superconducting films by normal-to-the-layer electric inductionD_nand homogeneous parallel-to-the-film magnetic fieldB_t. An experimental set-up is proposed for observation of the new electrodynamic effect. Within London’s electrodynamics, an elementary theory of the effect is presented, and details of a BCS derivation are briefly discussed. The analyzed numerical example shows that an experiment can easily be performed in every lab involved in the development of superconducting field effect transistors SU-FET. For the fundamental physics of high- T_csuperconductivity the experimental confirmation will give a unique method for the measurement of the effective mass m ^* of Cooper-pairs moving in a conducting CuO₂plane.     

Annealing effects on the crystal structure and physical properties of FeSe1−xTex (0.6 ≦ x ≦ 1) single crystals

Annealing effects of FeSe_1?xTe_x (0.6 ≦ x ≦ 1) single crystals have been investigated from measurements of the powder X-ray diffraction and specific heat. Through the annealing, several peaks of powder X-ray diffraction have become sharp and a clean jump of the specific-heat at the superconducting (SC) transition temperature, T_c, has been observed for x = 0.6–0.9, indicating bulk superconductivity. For annealed single-crystals of x = 0.6–0.8, the SC condensation energy, U₀, and the SC gap, Δ₀, at 0 K have been estimated as ～1.8 J/mol and 2.3–2.5 meV, respectively. The value of 2Δ₀/k_BT_c is 3.9–4.5, indicating a little strong-coupling superconductivity. Both the electronic specific-heat coefficient in the normal state, γ_n, and the residual electronic specific-heat coefficient in the SC state, γ₀, have been found to show significant x dependence. The values of γ_n are much larger than those estimated from the band calculation.     

Above-gap and subgap differential conductance anomaly in concentrated magnetic semiconductor Zn0.32Co0.68O1 − v/Pb superconductor hybrid junctions

The Zn_0.32Co_0.68O_1 − v/Pb hybrid junctions were prepared, where the concentrated magnetic semiconductor Zn_0.32Co_0.68O_1 − v is in the region of variable range hopping transport instead of the ballistic or diffusive transport. The high differential conductance peak at gap voltage and two above-gap peaks were observed below the superconducting critical temperature. Moreover, both the zero bias conductance peak and the finite bias conductance peak were observed below the gap voltage. All these differential conductance peaks systematically evolve and finally disappear as the temperature or the magnetic field increases. These transport phenomena were explained by phase coherent Andreev reflection in the presence of strong disorder, magnetic impurity scattering, and spin polarization.     

Excitonic magnetic polaron dynamics of MBE grown CdTe/Cd1 − xMnxTe,Cd1 − xMnxTe/Cd1 − vMgyTe single quantum wells in magneti fields

Excitonic lifetimes in Cd_1 − xMn_Ue2Te, Cd_1 − xMg_xTe epilayers and CdTe/Cd_1 − xMn_xTe, Cd_1 − xMn_xTe/Cd_1 − vMg_yTe single quantum wells with different well widths and Mn, Mg compositions are investigated. The excitonic lifetimes are found to reduce drastically by applying external magnetic fields to samples with giant Zeeman splittings. The observed phenomenon is interpreted in terms of the PL decay time contribution from the long-life dark excitons which can convert to excitons for recombinations by a spin-flip process. We attribute the lifetime reduction to the depletion of dark excitons due to their crossing over the exciton energies for dipole allowed transitions in magnetic fields.     

Ultrasonic assisted-Fenton-like degradation of nitrobenzene at neutral pH using nanosized oxides of Fe and Cu

Ultrasonic-assisted heterogeneous Fenton reaction was used for degradation of nitrobenzene (NB) at neutral pH conditions. Nano-sized oxides of α-Fe₂O₃ and CuO were prepared, characterized and tested in degradation of NB (10 mg L⁻¹) under sonication of 20 kHz at 25 °C. Complete degradation of NB was effected at pH 7 in presence of 10 mM H₂O₂ after 10 min of sonication in presence of α-Fe₂O₃ (1.0 g L⁻¹), (k = 0.58 min⁻¹) and after 25 min in case of CuO (k = 0.126 min⁻¹). α-Fe₂O₃ showed also effective degradation under the conditions of 0.1 g L⁻¹ oxide and 5.0 mM of H₂O₂, even though with a lower rate constant (0.346 min⁻¹). Sonication plays a major role in enhancing the production of hydroxyl radicals in presence of solid oxides. Hydroxyl radicals-degradation pathway is suggested and adopted to explain the differences noted in rate constants recorded on using different oxides.     

Simulation of flux dynamics in a superconducting bulk magnetized by multi-pulse technique

We have simulated the time and spatial dependence of local field B_z(t, r) and temperature T(t, r) on the superconducting bulk during pulsed field magnetization (PFM) using the finite element method (FEM). A modified multi-pulse technique with step-wise cooling (MMPSC) was performed to the cryo-cooled bulk, which was experimentally confirmed to the effective PFM technique to enhance the trapped field B_z higher than 5 T. In the simulation, the B_z value at the center of the bulk surface was enhanced at the 2nd stage of the MMPSC method, in which the results of the simulation reproduced the experimental ones. The enhancement of B_z results from the reduction in the temperature because of the already trapped flux in the bulk at the 1st stage of the MMPSC method.     

Flux pinning and superconducting properties of melt-textured NEG-123 superconductor with TiO2 addition

We studied the effect of TiO₂ doping on flux pinning and superconducting properties of a melt-grown (Nd_0.33Eu_0.33Gd_0.33) Ba₂Cu₃O_y + 35 mol% Gd₂BaCuO₅ (70 nm in size) composite (NEG-123) processed in Ar–1% O₂ atmosphere. As indicated by similar, sharp superconducting transitions, the small quantities of TiO₂ used in our experiments did not deteriorate superconducting properties of the NEG material. Transmission electron microscopy (TEM) analysis found 20–50 nm Ti-based particles in the NEG-123 matrix. However, we have not observed the clouds of <10 nm sized particles in the NEG-123 matrix, as in the case of recently reported NEG-123 composites doped by Mo and Nb nanoparticles. Nevertheless, quite a good J_c–B performance in the 0.1 mol% Ti-doped sample, namely 550 kA/cm² at the self-field and at the secondary peak field (4.5 T) was achieved at 65 K, while 320 kA/cm² was obtained at zero-field at 77 K, and 50 kA/cm² at 90.2 K. The pinning effectiveness decreased with increasing Ti content above 0.2 mol%. The analysis of the pinning force showed that higher concentration of Ti (>0.2 mol%) increased the amount of normal pins (δl pinning), indicated by the Fp(h) peak shift from h = 0.42–0.36. The maximum pinning effect in a broad field range could be achieved by optimizing Ti content and adding sub-micron Gd-211 particles.     

Remarks on the order parameter of the cuprate high temperature superconductors

A large body of spectroscopic data on the cuprate high temperature superconductors (CHTSC) is reviewed in order to determine their order parameter. ASJ, INS, B_2g Raman spectra, optical data, NIS “dips”, ARPES “dips” and ARPES “kinks” all show the same excitation energy (40 meV for OP95 systems), proportional to the superconducting transition temperature, and it is therefore identified with the order parameter.     

On the superconductivity and structural properties of YBa2Cu3 − xCdxO7 − y

A series of superconducting cuprates with the nominal composition YBa₂Cu_3 − xCd_xO_7 − yand the effect of Cd substitution on Cu sites in this compound is presented. X-ray powder diffraction patterns for these cadmium cuprates with reduced diamagnetism indicate an orthorhombic unit cell like-perovskite structure for (0 ≤ x ≤ 0.15), while for higher Cd concentration, i.e.x = 1.0 the material is polyphasic. The observed superconducting transition temperature of the samples is nearly the same ([formula] K), except for (x = 1.0) whereT_cdrops to 72 K and a transition from metallic to semiconducting behavior of the normal state of the resistivity is observed. Such a decrease inT_cfor higher Cd concentration could be attributed to the presence of the green phase in this composition.     

Inorganic polymer phosphazene disulfide as cathode material for rechargeable lithium batteries

Novel inorganic network polymer phosphazene disulfide [(NPS₂)₃]_n was synthesized by a solution cross-link method. IR and element content analysis confirmed the polymer's molecular structure. The polymer has an average particle size of d_0.5 = 7.7 μm and the specific surface area is 57.4 m² g^− 1. TG/DTA analysis showed that [(NPS₂)₃]_n underwent a decomposition reaction from 200 to 300 °C. When used as cathode material in lithium batteries, its initial discharge capacity was 459.1 mAh g^− 1, which is almost 93.5% of theoretical specific capacity (490.9 mAh g^− 1). After 30 charge–discharge cycles, the discharge capacity of [(NPS₂)₃]_n stabilized at approximately 400.1 mAh g^− 1 which revealed an excellent cyclic ability. Therefore [(NPS₂)₃]_n is of great potential as cathode material for secondary lithium batteries.     

Determination of superconducting gap of SmFeAsFxO1−x superconductors by Andreev reflection spectroscopy

The superconducting gap in FeAs-based superconductor SmFeAs(O_1?xF_x) (x = 0.15 and 0.30) and the temperature dependence of the sample with x = 0.15 have been measured by Andreev reflection spectroscopy. The intrinsic superconducting gap is independent of contacts while many other “gap-like” features vary appreciably for different contacts. The determined gap value of 2Δ = 13.34 ± 0.47 meV for SmFeAs(O_0.85F_0.15) gives 2Δ/k_BT_C = 3.68, close to the BCS prediction of 3.53. The superconducting gap decreases with temperature and vanishes at T_C, in a manner similar to the BCS behavior but dramatically different from that of the nodal pseudogap behavior in cuprate superconductors.     

The evolution of electromagnetic response at low frequencies with the development of superconducting condensation in Tl2Ba2CaCu2O8+δ

We report the in-plane temperature dependent ac impedance spectrum of Tl₂Ba₂CaCu₂O_8+δ (Tl-2212) single crystal film with thickness 3000 Å and T_c = 96 K. In process of the superconducting condensation, the impedance spectrum z(ω,T₀) changed considerably and was very similar with the evolution of the spectrum under various dc bias voltages in the shallow superconducting state. The spectrum weight transfers from high frequency regions to lower ones and eventually diverges towards the dc limit. From the analysis, it seems that the superconducting ‘islands’ form first and then grow larger, till the formation of a ‘continent’. The impedance spectrum z(ω,B_I) at various dc bias B_I have also been studied.     

Strongly anisotropic thermal conductivity in planar hexagonal borophene oxide sheet

The flat hexagonal borophene oxide (B₂O) has the highest Li storage capacity among existing two-dimensional materials. Thermal conductivity is an important parameter for the safety of Li-ion batteries. We investigate the lattice thermal conductivity of B₂O by solving phonon Boltzmann transport equation combined with the first-principles calculations. We found that the relaxation time approximation remarkably underestimate the thermal conductivity (κ) of monolayer B₂O, revealing phonon hydrodynamics characteristic. The κ of B₂O from the exact solution of Boltzmann transport equation is 53 W m⁻¹ K⁻¹ and 130 W m⁻¹ K⁻¹ along armchair-direction and zigzag-direction at 300 K, respectively. B₂O exhibits strong thermal transport anisotropy due to anisotropic phonon group velocity, obviously larger than that of other borophene allotropes. At room temperature, the phonon mean free path of B₂O is about 231 nm and 49 nm along armchair-direction and zigzag-direction, respectively. The highly anisotropic thermal conductivity of B₂O offers new possibilities for its applications in thermal management.