Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)

The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski-Krastanov film growth was observed with flat lying molecules relative to the substrate.     

Growth of thin Fe(0 0 1) films for terahertz emission experiments

The electrical and magnetic properties of thin iron (Fe) films have sparked significant scientific interest. Our interest, however, is in the fundamental interactions between light and matter. We have discovered a novel application for thin Fe films. These films are sources of terahertz (THz) radiation when stimulated by an incident laser pulse. After intense femtosecond pulse excitation by a Ti:sapphire laser, these films emit picosecond, broadband THz frequencies. The terahertz emission provides a direct measure of the induced ultrafast change in magnetization within the Fe film. The THz generation experiments and the growth of appropriate thin Fe films for these experiments are discussed. Several criteria are used to select the substrate and film growth conditions, including that the substrate must permit the epitaxial growth of a continuous, monocrystalline or single crystal film, yet must also be transparent to the emitted THz radiation. An Fe(0 0 1) film grown on the (0 0 1) surface of a magnesium oxide (MgO) substrate makes an ideal sample. The Fe films are grown by physical vapor deposition (PVD) in an ultrahigh vacuum (UHV) system. Low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) are used to characterize the Fe(0 0 1) films. Two substrate surface preparation methods are investigated. Fe(0 0 1) films grown on MgO(0 0 1) substrates that are used as-received and films grown on MgO(0 0 1) substrates that have been UV/ozone-cleaned ex vacuo and annealed in vacuo produce the same results in the THz generation experiments. Either substrate preparation method permits the growth of samples suitable for the THz emission experiments.     

Dependence of the microstructural properties on the substrate temperature in strained CdTe (1 0 0)/GaAs (1 0 0) heterostructures

CdTe thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy at various temperatures. The bright-field transmission electron microscopy (TEM) images and the high-resolution TEM (HRTEM) images showed that the crystallinity of CdTe epilayers grown on GaAs substrates was improved by increasing the substrate temperature. The result of selected-area electron diffraction pattern (SADP) showed that the orientation of the grown CdTe thin films was the (1 0 0) orientation. The lattice constant the strain, and the stress of the CdTe thin film grown on the GaAs substrate were determined from the SADP result. Based on the SADP and HRTEM results, a possible atomic arrangement for the CdTe/GaAs heterostructure is presented.     

Synchrotron photoemission studies of pentacene films on Cu(1 1 0)

We have investigated the nature of the interaction between pentacene and Cu(1 1 0) for films grown by two different methods, and the energy level alignment at the resulting pentacene/Cu(1 1 0) interface. The first film was grown in a stepwise fashion at room temperature while the second film was grown using an annealed monolayer to template the growth of the subsequent layers. Synchrotron based photoemission techniques have been used to compare the initial stages of the growth of the two films. A thorough examination of the growth of both films indicates a strong bond between the initial monolayer of pentacene and the Cu(1 1 0) substrate, in addition to a change in molecular orientation for subsequent layers after the completion of the initial monolayer. A comparison of the two films indicates identical film growth for both films with the film templated by the annealed monolayer exhibiting a more uniform growth mode for the film thicknesses investigated.     

Influence of surface temperature and surface modifications on the initial layer growth of para-hexaphenyl on mica (0 0 1)

Ultra-thin films of para-hexaphenyl (6P) were prepared on muscovite mica (0 0 1) utilizing organic molecular beam deposition (OMBD) under well defined ultra high vacuum (UHV) conditions. The 6P growth characteristics were studied as a function of substrate temperature and substrate surface conditions. For the initial state of layer growth, thermal desorption spectroscopy (TDS) was used to verify the existence of a wetting layer. In this monomolecular continuous wetting layer, the molecules lie flat on the surface and are rather strongly bonded. For thicker films, in-situ X-ray photoelectron spectroscopy (XPS) in combination with (TDS) was applied to reveal the kinetics of the layer growth. Ex-situ atomic-force microscopy (AFM) was used to determine the film morphology. In particular, the influence of surface modifications (carbon contamination, sputtering) on 6P layer growth was investigated. XPS and low energy electron diffraction (LEED) were used to characterize the mica surface before the film deposition. TDS and AFM revealed a considerable change in film growth, from a needle-like island growth of flat laying molecules on top of the wetting layer (for the air cleaved mica) to terrace-like film growth of standing molecules, without a wetting layer (after surface modifications).     

Homogeneous Si films on CaF2/Si(1 1 1) due to boron enhanced solid phase epitaxy

The structure and morphology of Si/CaF₂/Si(1 1 1) structures have been investigated by X-ray diffraction (XRD, GIXRD) and X-ray photoelectron spectroscopy (XPS). While CaF₂ films were grown via molecular beam epitaxy (MBE), Si films on CaF₂/Si(1 1 1) are fabricated by surfactant enhanced solid phase epitaxy (SE-SPE). Here Boron was used as a surfactant to obtain semiconductor films of homogeneous thickness. The Si films are entirely relaxed while the CaF₂ films have both pseudomorphic and relaxed crystallites. After exposure to ambient conditions, the Si films have a very thin native oxide film. The homogeneous Si film partially prevents the incorporation of impurities at the interface between the Si substrate and CaF₂ via migration along residual defects of the CaF₂ film.     

Photoemission, NEXAFS and STM studies of pentacene thin films on Au(1 0 0)

We have investigated the initial stages of the growth of pentacene thin films on the Au(1 0 0) substrate using synchrotron radiation photoelectron spectroscopy (PES), near edge X-ray absorption fine structure (NEXAFS) and scanning tunnelling microscopy (STM). Results indicate a well-ordered structure with the pentacene molecules adopting a predominantly flat orientation with respect to the substrate for coverages of less than three monolayers. NEXAFS and photoemission data indicates the presence of a second molecular orientation for thicker films, with the introduction of a slight tilting away from planar bonding geometry at higher pentacene coverages. STM images of coverages less than three monolayers indicate a well-ordered pentacene structure allowing for the calculation of pentacene unit cell parameters. The pentacene molecular rows adopt a side-by-side bonding arrangement on the surface. For pentacene deposited at room temperature, step edges were observed to act as nucleation centres for film growth. Annealing of the substrate to 373 K was found to remove excess molecules and improve film quality, but did not otherwise change the bonding geometry of the pentacene with respect to the surface.     

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.     

Ultra-thin film growth of titanium dioxide on W(1 0 0)

We have employed low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy to follow the epitaxial growth of thin films of TiO₂ on W(1 0 0). The films were grown both by metal vapour deposition of titanium onto the substrate in UHV with subsequent annealing in a low partial pressure of oxygen, and by metal vapour deposition in a low partial pressure of oxygen. LEED patterns showed the characteristic patterns of (1 1 0) oriented rutile. A systematic spot splitting was observed and attributed to a stepped surface. The calculated step height was found to be in good agreement with that expected for rutile TiO₂(1 1 0), 3.3 Å. Titanium core level shifts were used to identify oxidation states as a function of film thickness allowing the interpretation in terms of a slightly sub-stoichiometric interface layer in contact with the substrate. In combination with the LEED patterns, the film structure is therefore determined to be (1 1 0) oriented rutile with a comparable level of stoichiometry to UHV prepared bulk crystals. The ordered step structure indicates considerable structural complexity of the surface.     

Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Electronic structures of the suboxide films formed on TiC(1 0 0) and ZrC(1 0 0) surfaces: Density functional theory studies

Density functional theory (DFT) calculations have been performed to elucidate the electronic structures of the TiO-like film on TiC(1 0 0) and the ZrO-like film on ZrC(1 0 0), which are assumed to be monolayers of suboxide films with (1 × 1) periodicity with respect to the substrate (1 0 0) surfaces. It was revealed that the electronic structures of both films were characterized by the existence of a band around 6 eV and a band around the Fermi level. The former and latter bands were mostly composed of O 2p and metal d orbitals, respectively, indicating the substantial ionic nature of the film. The calculated DOS well reproduced the previously obtained photoelectron spectra. From the inspection of the optimized structures, it was found that the both suboxide films have rippled structures; the metal and oxygen atoms are displaced vertically downward and upward, respectively, maintaining the (1 × 1) structures.     

Photoemission electron microscopy study of anthracene growth on Si(1 1 1)

The thin film growth of anthracene films on Si(1 1 1) surfaces is studied by photoemission electron microscopy (PEEM). The thin film growth of anthracene on Si(1 1 1) is similar to the growth of pentacene on silicon. Initially a layer of flat lying molecules chemisorbs on the surface. Subsequent growth of fractal islands with standing up molecules proceeds on top of this flat layer.     

Effects of carbonization and substrate temperature on the growth of 3C-SiC on Si(1 1 1) by SSMBE

The growth of 3C-SiC on Si(1 1 1) substrate was performed at different carbonization temperatures and substrate temperatures by solid-source molecular beam epitaxy (SSMBE). The properties of SiC film were analyzed with in situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The best carbonization temperature of 810 °C was found to be optimal for the surface carbonization. The quality of SiC film grown on Si at substrate temperature of 1000 °C is best. The worse crystalline quality for the sample grown at higher temperature was attributed to the large mismatch of thermal expansion coefficient between SiC and Si which caused more dislocation when sample was cooled down to room temperature from higher substrate temperature. Furthermore, the larger size of single pit and the total area of the pits make the quality of SiC films grown at higher temperature worse. More Si atoms for the sample grown at lower temperature were responsible for the degradation of crystalline quality for the sample grown at lower temperature.     

Structure and magnetism of bcc(1 1 0)-like Fe films grown on Cu(0 0 1) via ion beam triangulation and spin-polarized electron capture

The structure and magnetism of thin epitaxial Fe layers grown on Cu(0 0 1) is investigated by grazing scattering of fast H and He atoms. Information on the atomic structure of the film and substrate surfaces is obtained by making use of ion beam triangulation with protons. The magnetic behavior is studied via the polarization of light emitted after capture of spin-polarized electrons into excited atomic terms during scattering of He atoms. For the formation of bcc(1 1 0)-like Fe films at higher coverages, we detect differences in structural and magnetic properties for room and low temperature growth. We suggest that the crystalline structure depends on the film morphology and that Cu impurities affect the magnetic properties.     

Epitaxially grown ZnO thin films on 6H-SiC(0 0 0 1) substrates prepared by spin coating-pyrolysis

Epitaxially grown ZnO thin film on 6H-SiC(0 0 0 1) substrate was prepared by using a spin coating-pyrolysis with a zinc naphthenate precursor. As-deposited film was pyrolyzed at 500 °C for 10 min in air and finally annealed at 800 °C for 30 min in air. In-plane alignment of the film was investigated by X-ray pole-figure analysis. Field emission-scanning electron microscope, scanning probe microscope, and He-Cd laser (325 nm) was used to analyze the surface morphology, the surface roughness and photoluminescence of the films. In the photoluminescence spectra, near-band-edge emission with a broad deep-level emission was observed. The position of the near-band-edge peak was around 3.27 eV.     

A route to continuous ultra-thin cerium oxide films on Cu(1 1 1)

The growth and morphology of ultra-thin CeO₂(1 1 1) films on a Cu(1 1 1) substrate were investigated by means of low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The films were grown by physical vapor deposition of cerium in an oxygen atmosphere at different sample temperatures. The preparation procedure is based on a modification of a previous method suggested by Matolin and co-workers [1], involving growth at elevated temperature (520 K). Here, LEED shows good long range ordering with a “(1.5 × 1.5)” superstructure, but STM reveals a three-dimensional growth mode (Vollmer-Weber) with formation of a closed film only at larger thickness. Using a kinetically limited growth process by reactive deposition at low sample temperatures (100 K) and subsequent annealing, we show that closed layers of ceria with atomically flat terraces can be prepared even in the regime of ultra-thin films (1.5 ML). Closed and atomically flat ceria films of larger thickness (3 ML) are obtained by applying a multistep preparation procedure, in which successive ceria layers are homoepitaxially grown on this initial film. The resulting overlayers show strong similarities with the morphology of CeO₂(1 1 1) single crystal surfaces, suggesting the possibility to model bulk ceria by thin film systems.     

Characteristics of Ni films deposited on SiO2/Si(1 0 0) and MgO(0 0 1) by direct current magnetron sputtering system with the oblique target

280 nm-thick Ni films were deposited on SiO₂/Si(1 0 0) and MgO(0 0 1) substrates at 300 K, 513 K and 663 K by a direct current magnetron sputtering system with the oblique target. The films deposited at 300 K mainly have a [1 1 0] crystalline orientation in the film growth direction. The [1 1 0]-orientation weakens and the [1 1 1]- and [1 0 0]-orientations enhance with increasing deposition temperature. The lattice constant of the Ni films is smaller than that of the Ni bulk, except for the film grown on MgO(0 0 1) at 663 K. Furthermore, as the deposition temperature increases, the lattice constant of the films grown on the SiO₂/Si(1 0 0) decreases whereas that of the films grown on the MgO(0 0 1) increases. The films deposited at 300 K and 513 K grow with columnar grains perpendicular to the substrate. For the films deposited at 663 K, however, the columnar grain structure is destroyed, i.e., an about 50 nm-thick layer consisting of granular grains is formed at the interface between the film and the substrate and then large grains grow on the layer. The Ni films deposited at 300 K consist of thin columnar grains and have many voids at the grain boundaries. The grains become thick and the voids decrease with increasing deposition temperature. The resistivity of the film decreases and the saturation magnetization increases with increasing deposition temperature.     

Combinatorial synthesis and characterization of a ternary epitaxial film of Co and Mn doped Ge (0 0 1)

We report combinatorial molecular beam epitaxy synthesis and properties of a ternary epitaxial film of Co and Mn co-doped Ge grown on Ge (0 0 1) substrate. Structural effects were examined in situ by reflection high-energy electron diffraction and ex situ by microbeam X-ray diffraction techniques, and magnetic properties were probed by using magnetooptic Kerr effect. Ternary epitaxial phase diagrams have been studied for total doping concentrations up to 30 at.%, where regions of coherent epitaxy and rough disordered growth and those of near room temperature ferromagnetic ordering have been identified.     

X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(0 0 1)

TiO₂ and TiN_xO_y thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(0 0 1) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO₂[1 1 0] and TiNO[1 0 0] polycrystalline layers allowed to determine the growth rate (−80 Å/min) of TiO₂ and (−40 Å/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., ?-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained.