Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin Si_xGe_1−x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0 V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (∼7 nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of >10¹² cm⁻². Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.     

Elemental depth profiling of a-Si1−xGex:H films by elastic recoil detection analysis and secondary ion mass spectrometry

The hydrogen content in a-Si_1−xGe_x:H thin films is an important factor deciding the density and the optical band gap. We measured the elemental depth profiles of hydrogen together with Si and Ge by elastic recoil detection analysis (ERDA) combined with Rutherford backscattering (RBS) using MeV He²⁺ ions. In order to determine the hydrogen depth profiles precisely, the energy- and angle-dependent recoil cross-sections were measured in advance for the standard sample of a CH₃⁺-implanted Si substrate. The cross-sections obtained here are reproduced well by a simple expression based on the partial wave analysis assuming a square well potential (width: r₀ = 2.67 × 10⁻¹³ cm, depth: V₀ = −36.9 MeV) within 1%. For the a-Si_1−xGe_x:H films whose elemental compositions were determined by ERDA/RBS, we measured the secondary ions yields of HCs₂⁺, SiCs₂⁺, H⁻, Si⁻ and Ge⁻ as a function of Ge concentration x. As a result, it is found that the useful yield ratios of HCs₂⁺/SiCs₂⁺, H⁻/Si⁻ and Ge⁻/Si⁻ are almost constant and thus the elemental depth profiles of the a-Si_1−xGe_x:H films can be also determined by secondary ion mass spectrometry (SIMS) within 10% free from a matrix effect.     

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

Multilayered Ge nanocrystals embedded in SiO_xGeN_y films have been fabricated on Si substrate by a (Ge + SiO₂)/SiO_xGeN_y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO₂ composite target and subsequent thermal annealing in N₂ ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm⁻¹, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO₂) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the ‘Z’ growth direction.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Growth and properties of magnetron cosputtering grown MnxGe1−x on Si (001)

We have grown Mn_xGe_1−x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn_0.06Ge_0.94 film while new phase appears in the Mn_0.1Ge_0.9 film. Nanocrystals are formed in the Mn_0.06Ge_0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn_0.06Ge_0.94 film is p-type semiconductor and hole carrier concentration is 6.07×10¹⁹ cm⁻³ while the Mn_xGe_1−x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn_0.06Ge_0.94 film is ferromagnetic at room temperature.     

Optical and electrical properties of nonstoichiometric a-Ge1−xCx films prepared by magnetron co-sputtering

Amorphous non-hydrogenated germanium carbide (a-Ge_1−xC_x) films have been prepared by magnetron co-sputtering method in a discharge of Ar. The dependence of structural and chemical bonding properties on the Ge/C ratio (R) has been investigated by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The relationship between the chemical bonding and the optical and electrical properties of the a-Ge_1−xC_x films has also been explored. It has been shown that the refractive index of the films increases from 2.9 to 4.4 and the optical gap decreases from 1.55 to 1.05 eV as R increases from 1.22 to 5.67. Moreover, the conductivity σ increases clearly and the activation energy E_a decreases with the increasing R owing to the reduction of sp³ CGe bonds. The a-Ge_1−xC_x films exhibit refractive index and optical gap values changing with x in a wide range, which may make a-Ge_1−xC_x films good candidates in the fields of protection coatings for IR windows and electronic devices.     

Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)

The Ge growth on SiC(0 0 0 1) follows a Stranski–Krastanov mode for Si-rich (3×3) and reconstructed surfaces. For Ge deposit in particular temperature conditions, a new (4×4) superstructure takes place and the reflection high energy electron diffraction (RHEED) specular spot intensity presents one oscillation proving a wetting layer formation. An island nucleation is then ascertained by the oscillation vanishing and by the appearance of a k-modulated RHEED pattern. On the other hand, on a C-rich surface, a direct Ge island nucleation is observed from the first growth stage. Indeed, for 1 ML Ge, the RHEED diagram consists in spots and rings, and the atomic force microscopy analysis indicates a high density (8×10¹⁰ cm⁻²) of small islands (30 nm, h3 nm). The RHEED spot analysis shows a preferential epitaxial relationship with the substrate Ge(1 1 1)//SiC(0 0 0 1). The Ge–C bonding being energetically unfavourable, Ge tends to form islands immediately rather than wetting the graphite-terminated surface. The Ge growth mode on C-rich surface is thus of Volmer–Weber type.     

Structural and surface properties of Si1−xGex thin films obtained by reduced pressure CVD

This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si_1−xGe_x) alloy thin films, deposited by vertical reduced pressure CVD (RPCVD) in the temperature range between 500 and 750 °C and a total pressure of 5 or 10 Torr. The samples exhibited a very uniform good quality films formation, with smooth surface with rms roughness as low as 7 nm for all temperature range, Ge mole fraction up to 32% (at 600 °C), textures of 〈2 2 0〉 preferred orientation at lower temperatures and strong 〈1 1 1〉 at 750 °C, for both 5 and 10 Torr deposition pressures. The ³¹P⁺ and ¹¹B⁺ doped poly-Si_1−xGe_x films exhibited always lower electrical resistivity values in comparison to similar poly-Si films, regardless of the employed anneal temperature or implantat dose. The results indicated also that poly-Si_1−xGe_x films require much lower temperature and ion implant dose than poly-Si to achieve the same film resistivity. These characteristics indicate a high quality of obtained poly-Si_1−xGe_x films, suitable as a gate electrode material for submicron CMOS devices.     

Annealing of thin Zr films on Si1−xGex(0≤x≤1): X-ray diffraction and Raman studies

X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si_1−xGe_x epilayers (0≤x≤1). The C49 Zr(Si_1−xGe_x)₂ is the unique phase obtained after complete reaction. ZrSi_1−xGe_x is formed as an intermediate phase. The C49 formation temperature T_f is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x=0.33, a film microstructure change was observed. Films annealed at temperatures close to T_f are continuous and relaxed. Annealing at T>T_f leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds T_f. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between −0.3 and −3.5 GPa for 0≤x≤1 which corresponds to a strain in the range (−0.11, −1.15%). X-ray and Raman determinations are in good agreement.     

Evolution of SiGe nanoclusters and micro defects in the Si1−xGex layer fabricated by two-step ion implantation and subsequent thermal annealing

The Si_1−xGe_x thin layer is fabricated by two-step Ge ion implantation into (0 0 1) silicon. The embedded SiGe nanoclusters are produced in the Si_1−xGe_x layer upon further annealing. The number and size of the nanoclusters changed due to the Ge diffusion during annealing. Micro defects around the nanoclusters are illustrated. It is revealed that the change of Si-Si phonon mode is causing by the nanoclusters and micro defects.     

Soft x-ray absorption and high-resolution powder x-ray diffraction study of superconducting CaxLa1−xBa1.75−xLa0.25+xCu3Oy system

We have studied the electronic structure of unoccupied states measured by O K-edge and Cu L-edge x-ray absorption spectroscopy (XAS), combined with crystal structure studied by high resolution powder x-ray diffraction (HRPXRD), of charge-compensated layered superconducting Ca_xLa_1−xBa_1.75−xLa_0.25+xCu₃O_y (0≤x≤0.4 and 6.4≤y≤7.3) cuprate. A detailed analysis shows that, apart from hole doping, chemical pressure on the electronically active CuO₂ plane due to the lattice mismatch with the spacer layers greatly influences the superconducting properties of this system. The results suggest chemical pressure to be the most plausible parameter to control the maximum critical temperatures (T_c^max) in different cuprate families at optimum hole density.     

The magnetic phase transitions and magnetocaloric effect in MnNi1−xCoxGe alloys

The magnetic phase transitions and the magnetocaloric effects in MnNi_1−xCo_xGe (x=0.38 and 0.40) alloys were investigated. The substitution of Co for Ni in the MnNiGe antiferromagnet results in the metamagnetic transitions from antiferromagnetic to ferromagnetic state, which associates with very small thermal and magnetic hystereses. Positive and negative values of magnetic entropy changes are exhibited around the metamagnetic transition temperature and Curie temperature, respectively. The relatively large refrigerant capacity in low magnetic field along with the good reversibility suggest that MnNi_1−xCo_xGe (x=0.38 and 0.40) alloys are potential candidates for magnetic refrigeration.     

Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature

Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray diffraction and absorption spectra of the samples, the evolutions with growth temperature show an inflexion at the growth temperature of 300 ^°C. This was attributed to the phase transformation from zinc-blende to wurtzite. With increasing growth temperature from 270 ^°C to 360 ^°C, Fe concentration in the films increases monotonously. The electronic states of Cd_1−xFe_xS were investigated by X-ray photoelectron spectroscopy. Magnetic measurement shows Van Vleck paramagnetism of the Cd_1−xFe_xS thin film in the temperature region below 7 K.     

Raman characterization of Pb2Na1−xLaxNb5−xFexO15 and Pb0.5(5−x)LaxNb5−xFexO15 (0≤x≤1) solid solutions

The ferroelectric compounds Pb₂Na_1−xLa_xNb_5−xFe_xO₁₅ and Pb_0.5(5−x)La_xNb_5−xFe_xO₁₅ (0≤x≤1) with the tungsten bronze type structure have been investigated using Raman spectroscopy. The evolution of the spectra as a function of composition at room temperature is reported. In the frequency range 200-1000 cm⁻¹ three main A₁ phonons around 240 (υ₁), 630 (υ₂) and 816 (υ₃) cm⁻¹ were observed. The broadening of the Raman lines for high values of x originates from a significant structural disorder. This is in good agreement with the relaxor character of these compositions. The lowest-frequency part of the spectra, below 180 cm⁻¹, reveals a structural change in the studied solid solutions. The behaviour of the Raman shift of the υ₁ mode confirms that in Pb₂Na_1−xLa_xNb_5−xFe_xO₁₅, a clear anomaly occurs in the vicinity of x=0.4.     

Preparation of LixCa1−xTiO3 solid electrolytes by the sol-gel method

Solid electrolytes based on lithium doped CaTiO_3,Li_xCa_1−xTiO₃ (x=0-0.5) were prepared by the sol-gel method in an ethanol and water mixture medium. Phase identification and morphology observation of the products were carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the Li_xCa_1−xTiO₃ powders sintered above 700 ^°C are of cubic perovskite structure and the mean size of Li_xCa_1−xTiO₃ powders is about 80 nm. A study of ionic conductivity by AC impedance implies that the conductivity of Li_xCa_1−xTiO₃ increases with the increase of substituted Li⁺ ions and reaches a maximum value of 4.53×10⁻⁴ S cm⁻¹ at x=0.1, and then decreases for x>0.1.     

Confined acoustic modes and spectral determination of network connectivity: Raman signatures of nanometric structure in g-GexSe1−x

Low-temperature Raman scattering results are presented on three glass compositions of Ge_xSe_1−x (15, 20, and 27 At. Ge%), and conciled with their reported structural data. The acoustic range is marked by the absence of Boson peak, and features discrete modes corresponding to nanometric dynamic aggregates. First sharp diffraction peak (FSDP) in structure factor S(k), due to Ge-Ge correlations brought about by shared Ge[Se_1/2]₄ tetrahedra medium-range structures, signifies 3D networking of Se-chains. A measure of volume-fraction of these entities determined from the FSDP area, and their number density ρ_MRS∝(k³Area)_FSDP is found to relate directly to the network connectivity, defined from optical Raman spectra in terms of the degree of cross-linking of Se-chains.     

A DFT study of the electronic and magnetic properties of Fe2MnSi1−xGex alloys

We performed density functional theory (DFT) calculations to study the structural, electronic and magnetic properties of Fe₂MnSi_1−xGe_x alloys (x=0, 0.25, 0.50, 0.75, and 1.00). The lattice constant is found to increase linearly as a function of Ge concentration with a decrease in the formation energy. The total magnetic moment is found to be 3 μ_B for all alloys with the most contribution from Mn local magnetic moments. Iron atoms, however, exhibit much smaller spin moments about 10% of the bulk value. It seems that due to the proximity of Fe, magnetic moments have been induced on the sp atoms, which couple antiferromagnetically with Fe and Mn spin moments. Although, the band gap remains almost constant (0.5 eV), the spin–flip gap decreases as a function of x.     

First principles investigation of optical properties of zinc-blende AlxGa1−xAs1−yNy materials

We have performed a first-principle Full Potential Linearized Augmented Plane Waves calculation within the local density approximation (LDA) to the zinc-blende Al_xGa_1−xAs_1−yN_y to predict its optical properties as a function of N and Al mole fractions. The accurate calculations of electronic properties such as band structures and optical properties like refractive index, reflectivity and absorption coefficient of Al_xGa_1−xAs and Al_xGa_1−xAs_1−yN_y with x≤0.375 and y up to 4% are presented. Al_xGa_1−xAs on GaAs have a lattice mismatch less than 0.16% and the lattice constant of Al_xGa_1−xAs has a derivation parameter of 0.0113±0.0024. The band gap energies are calculated by LDA and the band anticrossing model using a matrix element of C_MN=2.32 and a N level of E_N=(1.625+0.069x) eV. The results show that Al_xGa_1−xAs can be very useful as a barrier layer in separate confinement heterostructure lasers and indicate that the best choice of x and y Al_xGa_1−xAs_1−yN_y could be an alternative to Al_xGa_1−xAs when utilized as active layers in quantum well lasers and high-efficiency solar cell structures.     

The preparation of nitrogen-doped TiO2−xNx photocatalyst coated on hollow glass microbeads

In this paper, the effective method for nitrogen-doped TiO_2−xN_x photocatalyst coated on hollow glass microbeads is described, which uses titanium tetraisopropoxide [Ti(iso-OC₃H₇)₄] as the raw materials and gaseous ammonia as a heat treatment atmosphere. The effects of heat treatment temperature and time on the photocatalytic activity of TiO_2−xN_x/beads are studied. The photocatalyst is characterized by the UV-vis diffuse reflection spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray powder diffraction (XRD), Brunauer-Emmett-Teller (BET) analysis and scanning electron microscopy (SEM). The results show that when the TiO_2−xN_x/beads is heated at 650 °C for 5 h, the photocatalytic activity of the TiO_2−xN_x/beads is the best. Compared with TiO₂, the photoabsorption wavelength range of nitrogen-doped TiO_2−xN_x red shifts of about 60 nm, and the photoabsorption intensity increases as well. The photocatalytic activity of the TiO_2−xN_x/beads is higher than that of the TiO₂/beads under visible light irradiation. The presence of nitrogen neither influences on the transformation of anatase to rutile, nor creates new crystal phases. When the TiO_2−xN_x/beads is heated at 650 °C for 5 h, the amount of nitrogen-doped is 0.53 wt.% in the TiO_2−xN_x. As the density of TiO_2−xN_x/beads prepared is lower than 1.0 g/cm³, it may float on water surface and use broader sunlight spectrum directly.     

Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.