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The reversible interconversion between two nonplanar conformations of single Zn(II) Etioporphyrin I molecules adsorbed on a NiAl(110) surface at 13 K was induced by a scanning tunneling microscope (STM). The threshold voltage for the conformational change at negative sample bias depends linearly on the tip-sample distance, suggesting an electrostatic force mechanism. The reverse conversion involves inelastic electron tunneling via a molecular electronic resonance at 1.25 eV. In contrast with the photon-induced conformational changes, an electrically induced mechanism is realized with the STM. 相似文献
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《Journal of magnetism and magnetic materials》2002,251(2):163-168
Taking into account the nonequilibrium spin accumulation, we apply a quantum-statistical approach to study the spin-polarized transport in a two-dimensional ferromagnet/semiconductor/ferromagnet (FM/SM/FM) double tunnel junction. It is found that the effective spin polarization is raised by increasing the barrier strength, resulting in an enhancement of the tunneling magnetoresistance (TMR). The nonequilibrium spin accumulation in SM may appear in both antiparallel and parallel alignments of magnetizations in two FMs, in particular for high bias voltages. The effects of spin accumulation and TMR on the bias voltage are discussed. 相似文献
4.
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance 总被引:1,自引:0,他引:1
Mitra C Raychaudhuri P Dörr K Müller KH Schultz L Oppeneer PM Wirth S 《Physical review letters》2003,90(1):017202
We report the magnetotransport characteristics of a trilayer ferromagnetic tunnel junction built of an electron doped manganite (La0.7Ce0.3MnO3) and a hole doped manganite (La0.7Ca0.3MnO3). At low temperatures the junction exhibits a large positive tunneling magnetoresistance (TMR), irrespective of the bias voltage. At intermediate temperatures below T(C) the sign of the TMR is dependent on the bias voltage across the junction. The magnetoresistive characteristics of the junction strongly suggest that La0.7Ce0.3MnO3 is a minority spin carrier ferromagnet with a high degree of spin polarization, i.e., a transport half-metal. 相似文献
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We investigate the spin-dependent tunneling transport in a heterostructure with two single molecular magnets (SMMs). The tunneling magnetoresistance (TMR) and negative differential conductance due to the strong resonant tunneling in the junction are demonstrated by the master equation approach. At low bias voltage, the device presents low/high resistant states with the initial states of the single molecular magnets parallel/antiparallel. Strong Coulomb repulsive interaction suppresses the current greatly in antiparallel situation. At high voltage, the middle system containing two SMMs tends to be non-polarized, and acts like ordinary quantum dots. 相似文献
7.
We have calculated the I–V curves, dynamical conductance, and tunneling magnetoresistance (TMR) of 1D magnetic tunneling junction through singleband tight binding model calculations based on the non-equilibrium Green's function approach. The difference in density of state of two ferromagnetic leads and the bias dependence of the propagator cause intrinsic asymmetries in TMR and dynamical conductance at finite bias. Besides, we have displayed that large TMR can be obtained even at high bias for half metallic leads. 相似文献
8.
J. Mathon 《Phase Transitions》2013,86(4-5):491-500
Rigorous theory of the tunneling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches , 65% in the tunneling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunneling current is negative in the metallic regime but becomes positive P , 35% in the tunneling regime. Calculation of the tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of , 20 atomic planes and the spin polarization of the tunneling current is positive for all MgO thicknesses. It is also found that spin-dependent tunneling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the o point ( k =0) even for MgO thicknesses as large as , 20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains nonzero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunneling from a Cu interlayer, i.e. non-zero TMR. Numerical modeling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the nonmagnetic layer is lost and with it the TMR. 相似文献
9.
A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device. 相似文献
10.
In this paper we review studies on spin-dependent transport in systems containing ferromagnetic nanoparticles. In a tunnel junction with a nanometer-scale-island, the charging effect leads to an electric current blockade phenomenon in which a single electron charge plays a significant role in electron transport, resulting in single-electron tunneling (SET) properties such as Coulomb blockade and Coulomb staircase. In a tunnel junction with a ferromagnetic nano-island and electrode, it was expected that the interplay of spin-dependent tunneling (SDT) and SET, i.e., spin-dependent single-electron tunneling (SD-SET), would give rise to remarkable tunnel magnetoresistance (TMR) phenomena. We investigated magnetotransport properties in both sequential tunneling and cotunneling regimes of SET and found the enhancement and oscillation of TMR. The self-assembled ferromagnetic nanoparticles we have employed in this study consisted of a Co–Al–O granular film with cobalt nanoparticles embedded in an Al–O insulating matrix. A Co36Al22O42 film prepared by a reactive sputtering method produced a TMR ratio reaching 10% and superparamagnetic behavior at room temperature. The TMR ratio exhibited an anomalous increase at low temperatures but no indication of change with bias voltage. In Section 4, we show that the anomalous increase of the MR provided evidence for higher-order tunneling (cotunneling) between large granules through intervening small granules. We emphasize that the existence of higher-order tunneling is a natural consequence of the granular structure, since broad distribution of granule size is an intrinsic property of granular systems. In Section 5, we concentrate on SD-SET properties in sequential tunneling regimes. We fabricated two types of device structures with Co–Al–O film using focused ion-beam milling or electron-beam lithography techniques. One had a granular nanobridge structure: point-shaped electrodes separated by a very narrow lateral gap filled with the Co–Al–O granular film. The other had a current-perpendicular-to-plane (CPP) geometry structure: a thin Co–Al–O granular film sandwiched by ferromagnetic electrodes with the current flowing in the direction perpendicular to the film plane through a few Co particles. We found the enhancement and oscillation of TMR due to spin-dependent SET in sequential tunneling regimes. In Section 6, we report experimental evidence of a spin accumulation effect in Co nanoparticles leading to the oscillation of TMR with alternate sign changes. Furthermore, we discovered that the spin relaxation time in the nanoparticles is unprecedentedly enhanced up to the order of more than hundreds of nanoseconds, compared to that evaluated from the spin-diffusion length of ferromagnetic layers in previous CPP-GMR studies, i.e., the order of tens of picoseconds. 相似文献
11.
在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层,FI为铁磁绝缘体或半导体层)的基础上,我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上,利用转移矩阵方法,对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明,在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值.
关键词:
双自旋过滤隧道结
隧穿磁电阻
非磁绝缘(半导)体间隔层 相似文献
12.
K. Tamanoi M. Sato M. Oogane Y. Ando T. Tanaka Y. Uehara T. Uzumaki 《Journal of magnetism and magnetic materials》2008
We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier. 相似文献
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The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device. The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling into empty states above the Fermi level. For artificially doped barriers, the low bias TMR decreases due to defect-assisted tunneling. Yet, this mechanism becomes ineffective at large bias, where instead inelastic spin scattering causes a strong TMR decay. 相似文献
14.
Deng-Zhu Guo Shi-Min Hou Geng-Min Zhang Zeng-Quan Xue 《Applied Surface Science》2006,252(14):5149-5157
Conductive-tip atomic force microscope (c-AFM) has been extensively used in measuring electrical properties of surface nanostructures, but the electrical conduction in c-AFM tip-sample contacts in nanometer scale is not well understood. In the present work, we experimentally investigated the electrical properties of the nanocontact between a W2C-coated c-AFM tip and granular gold film under small-load (∼5 nN) at ambient air conditions. We found that under a constant bias voltage (10 V), the electrical current passing through the tip-sample junction at fixed location of sample surface dramatically fluctuated and degenerated. By quantitatively estimating the mechanical and electrical aspects of the nanocontact, we explained the observed phenomena as mechanical instabilities, electron tunneling transport and atomic rearrangements at the contact junction. We think that our results are important for the realistic application of c-AFM in nanoelectronic measurement. 相似文献
15.
Zoë Kugler Volker DrewelloMarkus Schäfers Jan SchmalhorstGünter Reiss Andy Thomas 《Journal of magnetism and magnetic materials》2011,323(2):198-201
Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy. 相似文献
16.
M. J. Ma M. B. A. Jalil S. G. Tan D. E. Koh 《The European Physical Journal B - Condensed Matter and Complex Systems》2011,82(1):37-46
We theoretically study the spin-polarized transport
through double barrier magnetic tunnel junction (DBMTJ) consisting
of the quantum dot sandwiched by two ferromagnetic (FM) leads. The
tunneling current through the DBMTJ is evaluated based on the
Keldysh nonequilibrium Green’s function approach. The self-energy
and Green’s function of the dot are analytically obtained via the
equation of motion method, by systematically incorporating two
spin-flip phenomena, namely, intra-dot spin-flip, and spin-flip
coupling between the lead and the central dot region. The effects of
both spin-flip processes on the spectral functions, tunneling
current and tunnel magnetoresistance (TMR) are analyzed. The
spin-flip effects result in spin mixing, thus contributing to the
spectral function of the off-diagonal Green’s function components ( Gs[`(s)] r )\left( {G_{\sigma \bar \sigma }^r } \right). Interestingly, the spin-flip coupling
between the lead and dot enhances both the tunneling current and the
TMR for applied bias above the threshold voltage V
th
. On the
other hand, the intra-dot spin-flip results in an additional step in
the I-V characteristics near V
th
. Additionally, it
suppresses the tunneling current but enhances the TMR. The opposing
effects of the two types of spin-flip on the tunneling current means
that one spin-flip mechanism can be engineered to counteract the
other, so as to maintain the tunneling current without reducing the
TMR. Their additive effect on the TMR enables the DBMTJ to attain a
large tunneling current and high TMR for above threshold bias
values. 相似文献
17.
Fuchs GD Katine JA Kiselev SI Mauri D Wooley KS Ralph DC Buhrman RA 《Physical review letters》2006,96(18):186603
We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-like spin-polarized tunneling and reduced-surface-magnetism models of the TMR bias dependence, but is consistent with magnetic-state-dependent decay lengths in the tunnel barrier. 相似文献
18.
Santos TS Lee JS Migdal P Lekshmi IC Satpati B Moodera JS 《Physical review letters》2007,98(1):016601
Electron spin-polarized tunneling is observed through an ultrathin layer of the molecular organic semiconductor tris(8-hydroxyquinolinato)aluminum (Alq3). Significant tunnel magnetoresistance (TMR) was measured in a Co/Al2O3/Alq3/NiFe magnetic tunnel junction at room temperature, which increased when cooled to low temperatures. Tunneling characteristics, such as the current-voltage behavior and temperature and bias dependence of the TMR, show the good quality of the organic tunnel barrier. Spin polarization (P) of the tunnel current through the Alq3 layer, directly measured using superconducting Al as the spin detector, shows that minimizing formation of an interfacial dipole layer between the metal electrode and organic barrier significantly improves spin transport. 相似文献
19.
We have calculated the rate of light emission from a scanning tunneling microscope with an Ir tip probing a silver film. In the calculation we model the tip by a sphere. We find a considerable enhancement of the light emission compared with for example inverse photoemission experiments. This enhancement is explained as the result of an amplification of the electromagnetic field in the area below the microscope tip due to a localised interface plasmon. We estimate that one out of 104 tunneling electrons will emit a photon in the visible range. Due to an electromagnetic decoupling of the sphere from the sample the enhanced emission is lost for photon energies above a certain value. We also find that the experimentally observed maximum in the light emission as a function of bias voltage is related to the behavior of tip-sample separation versus bias voltage. 相似文献
20.
Oka H Tao K Wedekind S Rodary G Stepanyuk VS Sander D Kirschner J 《Physical review letters》2011,107(18):187201
We investigate the local tunnel magnetoresistance (TMR) effect within a single Co nanoisland using spin-polarized scanning tunneling microscopy. We observe a clear spatial modulation of the TMR ratio with an amplitude of ~20% and a spacing of ~1.3 nm between maxima and minima around the Fermi level. This result can be ascribed to a spatially modulated spin polarization within the Co island due to spin-dependent quantum interference. Our combined experimental and theoretical study reveals that spin-dependent electron confinement affects all transport properties such as differential conductance, conductance, and TMR. We demonstrate that the TMR within a nanostructured magnetic tunnel junction can be controlled on a length scale of 1 nm through spin-dependent quantum interference. 相似文献