Initial nitridation of the Ge(100)-2 x 1 surface by ammonia

The reaction of ammonia (NH(3)) on the Ge(100)-2 x 1 surface is investigated using density functional theory (DFT). We find that NH(3) adsorbs molecularly onto Ge(100)-2 x 1 via the formation of a dative bond. The calculations also show that, unlike Si(100)-2 x 1, the activation barrier for subsequent dissociation of NH(3) adsorbed on Ge(100)-2 x 1 is higher than that of reversible desorption, which indicates that NH(3) has a low reactive sticking probability on the Ge(100)-2 x 1 surface. We also predict that nitrogen insertion into the Ge-Ge dimer requires NH(3) overexposure because the activation barrier for NH(2) insertion into the Ge-Ge dimer is significantly above the entrance channel. The nitridation reaction pathway results in the N-H bridge-bonded state, which is found to be 17.4 kcal/mol more stable than the reactants. We find that the reactions of NH(3) on the Ge(100)-2 x 1 surface generally involve higher activation barriers and less stable intermediates than the analogous reactions on the Si(100)-2 x 1 surface.     

Initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide

We use density functional theory to investigate the surface chemistry of initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide. Comparison of the reaction of water on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces shows that the kinetics of oxidation of the Ge(100)-2 x 1 surface with water is slower. Our calculations also show that oxidation products on the Ge(100)-2 x 1 surface are less thermodynamically stable than on Si. We also investigate two competing dissociation reactions of H2O2 on the Ge(100)-2 x 1 surface. We find that dissociative adsorption via cleavage of the OH bond is less exothermic than OO dissociation. Furthermore, interdimer OO dissociation has a lower activation barrier than interdimer or intradimer OH dissociation, although interdimer dissociation products are found to be less stable compared than those formed from intradimer dissociation reactions. Finally, we find that the oxidation products formed from hydrogen peroxide are more stable than those formed from water.     

Nitro group as a means of attaching organic molecules to silicon: nitrobenzene on Si(100)-2 x 1

This paper will present the computational and experimental infrared studies of the reactions of nitrobenzene on a Si(100) surface, a prototypical model reaction for understanding the behavior of bifunctional molecules on semiconductor surfaces. The initial reaction of nitrobenzene with the Si(100)-2 x 1 occurs via 1,3-dipolar cycloaddition of the nitro group to the silicon surface dimer. Computational exploration of the initial adsorption configurations suggests that two stable structures can be formed: one with the phenyl ring essentially perpendicular to the surface; the other one with the tilt angle of approximately 113 degrees with respect to the surface normal. The barrier for converting the latter into the former, more stable by approximately 13 kJ/mol, is 19.1 kJ/mol. Further thermal reactions are analyzed, and the reaction pathways are compared for the computational models with fixed vs relaxed subsurface silicon atoms. While all the surface species resulting from nitrobenzene transformations on the Si(100)-2 x 1 surface studied here are thermodynamically stable, most of the reaction pathways can be ruled out on the basis of the analysis of the transition states leading to these species and on the comparison of predicted and measured vibrational spectra. As a result, the exact adsorption configurations can be pinpointed.     

Controlled fabrication of 1D molecular lines across the dimer rows on the Si(100)-(2 x 1)-H surface through the radical chain reaction

Current interest in the fabrication of organic nanostructures on silicon surface is focused on the self-directed growth of 1D molecular lines with predefined position, structure, composition, and the length on the H-terminated Si(100)-(2 x 1) surface. To date, no studies have succeeded in growing the molecular line across the dimer rows on Si(100)-(2 x 1)-H, which is highly desirable. Using scanning tunneling microscopy (STM), we studied a new molecular system (allyl mercaptan, CH2=CH-CH2-SH) that undergoes chain reaction across the dimer row on the Si(100)-(2 x 1)-H surface at 300 K and produces covalently bonded 1D molecular lines. In combination with the previous findings of chain reaction along the rows, the present observations of self-directed growth of 1D molecular lines across the dimer rows on the Si(100)-(2 x 1)-H surface provide a means to connect any two points (through molecular lines) on a 2D surface.     

Competing forward and reversed chain reactions in one-dimensional molecular line growth on the Si(100)-(2 x 1)-H surface

To explore the role of competing forward and reversed chain reactions in the growth of a one-dimensional (1D) molecular line on the Si(100)-(2 x 1)-H surface, controlled experiments were performed with various alkene molecules by scanning tunneling microscopy (STM) at various temperatures. It was observed that the end dangling bond (DB) of a styrene line, fabricated by a chain reaction on the Si(100)-(2 x 1)-H surface at 300 K, initiated a reverse chain reaction at 400 K, leading to the complete disappearance of the styrene line with zero-order desorption kinetics (rate constant k = 1.17 x 10-2 s-1 at 400 K). In the case of 2,4-dimethylstyrene, the reversed chain reaction was observed even at 300 K. These results suggest that the appearance of a molecular line in an STM image is determined by the rates of competing forward and reversed chain reactions at a given temperature. As predicted, 1D lines formed by the DB-initiated chain reaction of 1-hexene and 1-heptene on Si(100)-(2 x 1)-H were observed at 180 K because of the reduced desorption rate, despite the fact that those molecules showed no line growth at 300 K. These results indicate that the scope of forming 1D molecular lines on the Si(100)-(2 x 1)-H surface with various alkenes is much wider than anticipated in previous studies.     

Surface chemistry of five-membered aromatic ring molecules containing two different heteroatoms on Si(111)-7 x 7

The surface chemistry of three representative aromatic molecules containing two different heteroatoms isoxazole, oxazole, and thiazole on Si(111)-7 x 7 was studied. These molecules exhibit different competition and selectivity for multiple reaction channels with this surface, determined by a combination of molecular electronic and structural factors. Isoxazole is chemically attached to Si(111)-7 x 7 through both dative-bond addition and [4 + 2]-like cycloaddition. Oxazole chemisorbs on Si(111)-7 x 7 through both dative-bond addition and [2 + 2]-like cycloaddition. The kinetically favored [2 + 2]-like cycloadduct at low temperature is thermally converted into the thermodynamically preferred [4 + 2]-like cycloadduct at a temperature higher than 300 K. Thiazole is chemically bound to this surface only through formation of a Si...N dative bond at low temperature. This dative-bonded molecule is thermally converted into a [4 + 2]-like cycloadduct. The reaction channels of the three five-membered aromatic molecules containing two different heteroatoms (isoxazole, oxazole, and thiazole) and of the aromatic molecules containing only one heteroatom (pyridine, pyrrole, furan, and thiophene) are compared and analyzed for a thorough understanding of the reaction mechanisms of various heterocyclic aromatic molecules on this surface. The intrinsic connection between surface reaction mechanism and molecular electronic structure is demonstrated. This includes the distribution of electron density on the molecular ring determined by the geometric arrangement of the heteroatoms, the electronegativity of the heteroatoms, and the electronic contribution of the heteroatoms to formation of aromatic pi conjugation, as well as the molecular polarity.     

Proton transfer reactions on semiconductor surfaces

The concept of proton affinity on semiconductor surfaces has been explored through an investigation of the chemistry of amines on the Ge(100)-2 x 1, Si(100)-2 x 1, and C(100)-2 x 1 surfaces. Multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy, temperature programmed desorption (TPD), and density functional theory (DFT) calculations were used in the studies. We find that methylamine, dimethylamine, and trimethylamine undergo molecular chemisorption on the Ge(100)-2 x 1 surface through the formation of Ge-N dative bonds. In contrast, primary and secondary amines react on the Si(100)-2 x 1 surface via N-H dissociation. Since N-H dissociation of amines at semiconductor surfaces mimics a proton-transfer reaction, the difference in chemical reactivities of the Ge(100)-2 x 1 and Si(100)-2 x 1 surfaces toward N-H dissociation can be interpreted as a decrease of proton affinity down a group in the periodic table. The trend in proton affinities of the two surfaces is explained in terms of thermodynamics and kinetics. Solid-state effects on the C(100)-2 x 1 surface and the surface proton affinity concept are discussed based on our theoretical predictions.     

Selective chain reaction of acetone leading to the successive growth of mutually perpendicular molecular lines on the si(100)-(2 x 1)-H surface

The successive growth of mutually perpendicular molecular lines from one dangling-bond (DB) site on the Si(100)-(2 x 1)-H surface has been realized through a substrate-mediated chain reaction at 300 K. Among various molecules, acetone molecules undergo the most facile chain reaction with a DB site, which proceeds selectively on the Si(100)-(2 x 1)-H surface, resulting in only single molecular lines in the parallel-row (parallel to the dimer row) direction. The smaller size and higher reactivity of acetone molecules enable us to successively grow a parallel-row acetone line from the end of a cross-row (perpendicular to the dimer row) allylmercaptan line simply by changing the feed of gas molecules into the reaction chamber. Since the length of a molecular line is controlled by the number of gas molecules impinged, it is possible to turn a chain reaction from the cross-row direction to the parallel-row direction at any desired point on the surface. The reaction path of the adsorbing molecules is discussed. The present study provides a new means of fabricating mutually perpendicular molecular lines through a chain reaction initiating at a preselected DB site on the Si(100)-(2 x 1) surface.     

Formation of C=C and Si-Cl adstructures by insertion reactions of cis-dichloroethylene and perchloroethylene on Si(100)2 x 1

The room-temperature adsorption and thermal evolution of cis-dichloroethylene (DCE) and perchloroethylene (PCE) on Si(100)2 x 1 have been studied by X-ray photoelectron spectroscopy and temperature programmed desorption (TPD) mass spectrometry. Unlike ethylene that is found to adsorb on Si(100)2 x 1 through a [2+2] cycloaddition reaction, cis-DCE and PCE appear to dechlorinate upon adsorption on the 2 x 1 surface through an insertion reaction preserving the C=C bond. Our C 1s XPS spectra are consistent with the existence of mono-sigma-bonded and di-sigma bonded dechlorinated adstructures for both cis-DCE and PCE. The presence of the XPS C 1s feature at 283.9 eV, characteristic of the (=C<(Si)(Si)) component, supports the formation of a unique tetra-sigma-bonded C(2) dimer (i.e., by full dechlorination) for PCE, which is found to be stable to 800 K. In marked contrast to PCE for which no organic desorption fragments are observed, m/z 26 TPD features at 590 and 750 K have been observed for cis-DCE. These features could be attributed to the formation of acetylene resulting from Cl beta-elimination of 2-chlorovinyl adspecies and to direct desorption of vinylene, respectively. Further annealing the cis-DCE and PCE samples to above 800 K produces SiC and/or carbon clusters. The TPD data also show HCl evolution over 810-850 K for both cis-DCE and PCE, the latter of which also exhibits an additional SiCl(2) evolution above 850 K. The present work illustrates that the insertion mechanism could be quite common in the surface chemistry of chlorinated ethylenes on the 2 x 1 surface.     

Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1

A combined experimental and theoretical study of a model system of multifunctional unsaturated ketones, including ethyl vinyl ketone (EVK), 2-cyclohexen-1-one, and 5-hexen-2-one, on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces was performed in order to probe the factors controlling the competition and selectivity of organic reactions on clean semiconductor surfaces. Multiple internal reflection infrared spectroscopy data and density functional theory calculations indicate that EVK and 2-cyclohexen-1-one undergo selective [4 + 2] hetero-Diels-Alder and [4 + 2] trans cycloaddition reactions on the Ge(100)-2 x 1 surface at room temperature. In contrast, on the Si(100)-2 x 1 surface, evidence is seen for significant ene and possibly [2 + 2] C=O cycloaddition side products. The greater selectivity of these compounds on Ge(100) versus Si(100) is explained by differences between the two surfaces in both thermodynamic factors and kinetic factors. With 5-hexen-2-one, for which [4 + 2] cycloaddition is not possible, a small [2 + 2] C=C cycloaddition product is observed on Ge(100) and possibly Si(100), even though the [2 + 2] C=C transition state is calculated to be the highest barrier reaction by several kilocalories per mole. The results suggest that, due to the high reactivity of clean semiconductor surfaces, thermodynamic selectivity and control will play important roles in their selective functionalization, favoring the use of Ge for selective attachment of multifunctional organics.     

Hafnium oxide and zirconium oxide atomic layer deposition: initial precursor and potential side-reaction product pathways with H/Si(100)-2 x 1

Hybrid density functional calculations have been carried out using cluster models of the H/Si(100)-2 x 1 surface to investigate the mechanistic details of the initial surface reactions occurring in the atomic layer deposition of hafnium and zirconium oxides (HfO2 and ZrO2). Reaction pathways involving the metal precursors ZrCl4, Zr(CH3)4, HfCl4, and Hf(CH3)4 have been examined. Pathways leading to the formation of a Zr-Si or Hf-Si linkage show a significant sensitivity to the identity of the leaving group, with chloride loss reactions being both kinetically and thermodynamically less favorable than reactions leading to the loss of a methyl group. The energetics of the Zr(CH3)4 and Hf(CH3)4 reactions are similar with an overall exothermicity of 0.3-0.4 eV and a classical barrier height of 1.1-1.2 eV. For the reaction between H2O and the H/Si(100)-2 x 1 surface, the activation energy and overall reaction enthalpy are 1.6 and -0.8 eV, respectively. Due to contamination, trace amounts of H2O may be encountered by metal precursors, leading to the formation of minor species that can lead to unanticipated side-reaction pathways. Such gas-phase reactions between the halogenated and alkylated metal precursors and H2O are exothermic with small or no reaction barriers, allowing for the possibility of metal precursor hydroxylation before the H/Si surface is encountered. Of the contaminant surface reaction pathways, the most kinetically favorable corresponds to the surface -OH deposition. Interestingly, for the hydroxylated metal precursors, a unique reaction pathway resulting in the direct formation of Si-O-Zr and Si-O-Hf linkages has been identified and found to be the most thermodynamically stable pathway available, being exothermic by approximately 1.0 eV.     

Chemistry of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione on Si(100)-2x1

The surface chemistry of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (hfacH), a hydrogenated form of the most common ligand in metal and metal oxide deposition, on Si(100)-2x1 has been investigated using multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES), thermal desorption mass spectrometry, and computational analysis. The main goal of these studies was to understand if hfacH is a source of fluorine, carbon, and oxygen contamination for a variety of deposition processes where the hfac ligand is involved. In its molecular form, hfacH may potentially have up to 10 isomers including two ketonic and eight enolic forms. One of the enolic forms is shown to be the most stable upon adsorption on a clean Si(100)-2x1 surface at submonolayer coverages at cryogenic temperatures. Even though only the enolic form is present at cryogenic temperatures, at room temperature any of these isomers can exist and all the possibilities of their interaction with the Si(100)-2x1 surface, including several [2 + 2] and [2 + 4] addition pathways as well as O-H dissociation, should be considered. Despite such an array of possibilities, the room-temperature adsorption is governed by the thermodynamic stability of the final addition products between the hfacH and silicon surface. These adducts are stable at room temperature and decompose upon surface annealing.     

Orthogonal self-assembly of interconnected one-dimensional inorganic and organic nanostructures on the Si(100) surface

Orthogonal, interconnected inorganic and organic one-dimensional nanostructures have been fabricated by parallel self-assembly on the Si(100) surface and investigated using room temperature ultrahigh vacuum scanning tunneling microscopy. In particular, bismuth nanowires were self-assembled on the clean Si(100)-2 x 1 surface perpendicular to the Si dimer rows, followed by hydrogen passivation of the surrounding Si surface. Styrene molecular chains were then self-assembled on the H-passivated Si(100)-2 x 1 surface to intersect perpendicularly with the Bi nanowires. This general approach can likely be applied to the wide range of inorganic and organic species that spontaneously form one-dimensional nanostructures on the Si(100) surface.     

A density-functional-theory study of atomic nitrogen abstraction from Si(100)-(2 x 1) by a gaseous O(3P) atom

We have employed density-functional theory (DFT) to investigate the abstraction of a nitrogen atom from the Si(100)-(2 x 1) surface by a gas-phase O(3P) atom for different initial bonding configurations of nitrogen at the surface. For the N-Si(100) structures investigated, nitrogen abstraction by an O(3P) atom is predicted to be exothermic by at least 1.9 eV. Abstraction in a single elementary step is found only for the interaction of an O(3P) atom with nitrogen bound in a coordinatively saturated configuration, and an energy barrier of 0.20 eV is computed for this reaction. For nitrogen bound in coordinatively unsaturated configurations, abstraction is predicted to occur by precursor-mediated pathways in which the initial O-surface collision results in the formation of a N-O bond and the concomitant release of between 2.7 and 4.8 eV of energy into the surface, depending on the initial N-Si(100) structure. This initial step produces different surface structures containing an adsorbed NO species, which can then undergo a series of elementary steps leading to NO desorption. Since the barriers for these steps are found to be less than 1 eV in all cases, a significant excess of energy is available from initial N-O bond formation that could activate NO desorption within no more than a few vibrational periods after the initial gas-surface collision. Nitrogen abstraction by such a pathway is essentially an Eley-Rideal process since NO desorption occurs rapidly after the initial gas-surface collision, without the reactants thermally accommodating with the surface. These computational results indicate that nitrogen abstraction by gaseous O(3P) atoms should be facile, even at low surface temperatures, if nitrogen is bound to the Si(100) surface in coordinatively unsaturated configurations.     

Mechanisms for NH3 decomposition on Si(100)-(2 x 1) surface: a quantum chemical cluster model study

In this paper, we present a detailed mechanism for the complete decomposition of NH3 to NHx(a) (x = 0-2). Our calculations show that the initial decomposition of NH3 to NH2(a) and H(a) is facile, with a transition-state energy 7.4 kcal mol-1 below the vacuum level. Further decomposition to N(a) or recombination-desorption to NH3(g) is hindered by a large barrier of approximately 46 kcal mol-1. There are two plausible NH2 decomposition pathways: 1) NH2(a) insertion into the surface Si-Si dimer bond, and 2) NH2(a) insertion into the Si-Si backbond. We find that pathway (1) leads to the formation of a surface Si = N unit, similar to a terminal Si = Nt pair in silicon nitride, Si3N4, while pathway (2) leads to the formation of a near-planar, subsurface Si3N unit, in analogy to a central nitrogen atom (Nc) bounded to three silicon atoms in the Si3N4 environment. Based on these results, a plausible microscopic mechanism for the nitridation of the Si(100)-(2 x 1) surface by NH3 is proposed.     

Fabrication of interconnected 1D molecular lines along and across the dimer rows on the Si(100)-(2 x 1)-H surface through the radical chain reaction

To realize nanoscale wiring in two dimensions (2D), the fabrication of interconnected one-dimensional (1D) molecular lines through the radical chain reaction of alkene molecules (CH2=CH-R) on the H-terminated Si(100)-(2 x 1) surface have been investigated using scanning tunneling microscopy (STM) at 300 K. By the judicious choice of R in the CH2=CH-R molecule and by creating a dangling bond (DB) at a desired point using the STM tip, the perpendicularly connected allyl mercaptan (ALM) and styrene lines have been fabricated on the Si(100)-(2 x 1)-H surface. The continuous growth of the styrene line at the end DB of a growing ALM line (or vice versa) does not occur, perhaps, due to steric hindrance or/and interaction between adsorbed molecules.     

Diels-Alder addition of some 6- and 5-member ring aromatic compounds on the Si(001)-2×l surface: dependence of the binding energy on the resonance energy of the aromatic compounds

An energy decomposition scheme is proposed for understanding of the relative low binding energy of the [4+2] cycloaddition of benzene on the Si(001)-2x1 surface. By means of density functional cluster model calculations, this scheme is demonstrated to be applicable to some other 6- and 5-member ring aromatic compounds, giving a trend that the binding energy of the [4+2] cycloaddition products of those aromatic compounds on the Si(001) surface depends strongly on their resonance energy.     

Diradical mechanisms for the cycloaddition reactions of 1,3-butadiene,benzene, thiophene,ethylene, and acetylene on a Si(111)-7x7 surface

The cycloaddition chemistry of several representative unsaturated hydrocarbons (1,3-butadiene, benzene, ethylene, and acetylene) and a heterocyclic aromatic (thiophene) on a Si(111)-7x7 surface has been explored by means of density functional cluster model calculations. It is shown that (i) 1,3-butadiene, benzene, and thiophene can undergo both [4+2]-like and [2+2]-like cycloadditions onto a rest atom-adatom pair, with the former process being favored over the latter both thermodynamically and kinetically; (ii) ethylene and acetylene undergo [2+2] cycloaddition-like chemisorptions onto a rest atom-adatom pair; and (iii) all of these reactions adopt diradical mechanisms. This is in contrast to the [4+2] cycloaddition-like chemisorptions of conjugated dienes on a Si(100) surface and to the prototype [4+2] cycloadditions in organic chemistry, which were believed to adopt concerted reaction pathways. Of particular interest is the [4+2]-like cycloaddition of s-trans-1,3-butadiene, whose stereochemistry is retained during its chemisorption on the Si(111) surface.     

Complex thermal chemistry of vinyltrimethylsilane on Si(100)-2x1

The surface chemistry of vinyltrimethylsilane (VTMS) on Si(100)-2x1 has been investigated using multiple internal reflection-Fourier transform infrared spectroscopy, Auger electron spectroscopy, and thermal desorption mass spectrometry. Molecular adsorption of VTMS at submonolayer coverages is dominating at cryogenic temperatures (100 K). Upon adsorption at room temperature, chemical reaction involving rehybridization of the double bond in VTMS occurs. Further annealing induces several reactions: molecular desorption from a monolayer by 400 K, formation and desorption of propylene by 500 K, decomposition leading to the release of silicon-containing products around 800 K, and, finally, surface decomposition leading to the production of silicon carbide and the release of hydrogen as H(2) at 800 K. This chemistry is markedly different from the previously reported behavior of VTMS on Si(111)-7x7 surfaces resulting in 100% conversion to silicon carbide. Thus, some information about the surface intermediates of the VTMS reaction with silicon surfaces can be deduced.     

HREELS, STM, and STS study of CH(3)-terminated Si(111)-(1x1) surface

An ideally (1x1)-CH(3)(methyl)-terminated Si(111) surface was composed by Grignard reaction of photochlorinated Si(111) and the surface structure was for the first time confirmed by Auger electron spectroscopy, low energy electron diffraction, high-resolution electron energy loss spectroscopy (HREELS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). HREELS revealed the vibration modes associated to the CH(3)-group as well as the C-Si bond. STM discerned an adlattice with (1x1) periodicity on Si(111) composed of protrusions with internal features, covering all surface terraces. The surface structure was confirmed to be stable at temperatures below 600 K. STS showed that an occupied-state band exists at gap voltage of -1.57 eV, generated by the surface CH(3) adlattice. This CH(3):Si(111)-(1x1) adlayer with high stability and unique electronic property is prospective for applications such as nanoscale lithography and advanced electrochemistry.