TiN/SiO2纳米多层膜的晶体生长与超硬效应

高硬度的含氧化物纳米多层膜在工具涂层上具有重要的应用价值.研究了TiN/SiO2_{2纳米多 层膜的晶体生长特征和超硬效应.一系列具有不同SiO22和TiN调制层厚的纳米多 层膜采用多 靶磁控溅射法制备;采用x射线衍射、x射线能量色散谱、高分辨电子显微镜和微力学探针表 征了多层膜的微结构和力学性能.结果表明,虽然以单层膜形式存在的TiN和SiO22分别形成 纳米晶和非晶结构,它们组成多层膜时会因晶体生长的互促效应而呈现共格外延生长的结构 特关键词：2纳米多层膜')\" href=\"#\">TiN/SiO22纳米多层膜外延生长非晶晶化超硬效应}     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al2O3调制层厚度的TiN/Al2O3纳米多层膜.利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能.研究结果表明,在TiN/Al2O3纳米多层膜中,单层膜时以非晶态存在的Al2O3层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa.进一步增加多层膜中Al2O3调制层的层厚度,Al2O3层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低.     

TaN/TiN和NbN/TiN纳米结构多层膜超硬效应及超硬机理研究

采用射频磁控溅射方法制备单层TaN,NbN和TiN薄膜和不同调制周期的TaN/TiN和NbN/TiN纳米多层膜.薄膜采用X射线衍射仪、高分辨率透射电子显微镜和显微硬度仪进行表征.结果表明TaN/TiN和NbN/TiN纳米多层膜在一定的调制周期范围内均呈共格界面,相应地均出现了超硬效应,且最大硬度值接近.分析了TaN/TiN与NbN/TiN纳米多层膜的超硬机理,TaN/TiN的晶格错配度与NbN/TiN的接近,但TaN/TiN的弹性模量差与NbN/TiN的有一定的差别,表明由于晶格错配使共格外延生长在界面处关键词：TaN/TiN纳米多层膜NbN/TiN纳米多层膜外延生长超硬效应     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明,在TiN/Al₂O₃纳米多层膜中,单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化,并与TiN层形成共格外延生长,相应地,多层膜产生硬度明显升高的超硬效应,最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度,Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长,使得多层膜的硬度逐步降低. 关键词：2O₃纳米多层膜')\" href=\"#\">TiN/Al₂O₃纳米多层膜外延生长非晶晶化超硬效应     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用 V 和 SiO2 靶通过反应溅射方法制备了一系列具有不同 SiO2 和 VN 调制层厚的 VN/SiO2 纳米多层膜.利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能.结果表明:在Ar,N2混和气体中,射频反应溅射的SiO2薄膜不会渗氮.单层膜时以非晶态存在的SiO2,当其厚度小于1 nm时,在多层膜中因VN晶体层的模板效应被强制晶化,并与VN层形成共格外延生长.相应地,多层膜的硬度得到明显提高,最高硬度达34 GPa.随SiO2层厚度的进一步增加,SiO2层逐渐转变为非晶态,破坏了与VN层的共格外延生长结构,多层膜硬度也随之降低.VN调制层的改变对多层膜的生长结构和力学性能也有影响,但并不明显.     

反应磁控溅射ZrN/AlON纳米多层膜的晶体生长和超硬效应

采用Zr靶和Al₂O₃靶通过在Ar,N₂混合气氛中进行反应磁控溅射的方法制备了不同AlON调制层厚和不同ZrN调制层厚的两个系列的ZrN/AlON纳米多层膜.利用X射线能量色散谱仪、X射线衍射仪、高分辨透射电子显微镜和微力学探针研究了多层膜的成分、微结构和力学性能.结果表明,在Ar,N₂混合气氛中对Al₂O₃进行溅射的过程中,N原子会部分取代Al₂O₃中的氧原子,形成AlON化合物.在ZrN/AlON纳米多层膜中,由于受到ZrN晶体调制层的模板作用,溅射条件下以非晶态存在的AlON层在其厚度小于0.9nm时被强制晶化并与ZrN层形成共格外延生长;相应地,多层膜的硬度明显提高,最高硬度达到33.0GPa.进一步增加多层膜中AlON调制层的厚度,AlON层形成非晶结构,破坏了多层膜的共格外延生长,导致其硬度逐步降低. 关键词：ZrN/AlON纳米多层膜外延生长非晶晶化力学性能     

SiO2的赝晶化及AIN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO2 层厚度的A1N/SiO2 纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO2 层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响.结果表明,由于受AIN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO2层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长.由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应.SiO2随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低.     

TiN/SiC纳米多层膜的生长结构与力学性能

研究了TiN/SiC纳米多层膜中立方SiC（B1cubic SiC）的形成及其对TiN/SiC多层膜力学性能的影响.结果表明：在TiN/SiC多层膜中,非晶态的SiC层在厚度小于0.6nm时形成立方结构并与TiN形成共格外延生长的超晶格柱状晶,使多层膜产生硬度和弹性模量显著升高的超硬效应,最高硬度超过60GPa.SiC随着层厚的增加转变为非晶相,从而阻止了多层膜的共格外延生长,使薄膜呈现TiN纳米晶和SiC非晶组成的层状结构特征,同时多层膜的硬度和弹性模量下降.TiN/SiC纳米多层膜产生的超硬效应与立方关键词：立方碳化硅TiN/SiC纳米多层膜外延生长超硬效应     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar,N₂混和气体中,射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂,当其厚度小于1nm时,在多层膜中因VN晶体层的模板效应被强制晶化,并与VN层形成共格外延生长. 相应地,多层膜的硬度得到明显提高,最高硬度达34GPa. 随SiO₂层厚度的进一步增加,SiO₂层逐渐转变为非晶态,破坏了与VN层的共格外延生长结构,多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响,但并不明显. 关键词：2纳米多层膜')\" href=\"#\">VN/SiO₂纳米多层膜共格外延生长非晶晶化超硬效应     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能,研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明,由于受AlN六方晶体结构的模板作用,溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度,多层膜中产生了拉、压交变的应力场,使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长,多层膜的外延生长结构受到破坏,其硬度也随之降低. 关键词：2纳米多层膜')\" href=\"#\">AlN/SiO₂纳米多层膜赝晶化应力场超硬效应     

Crystallization of amorphous SiC and superhardness effect in TiN/SiC nanomultilayers

TiN/SiC nanomultilayers with various constituent layer thicknesses were prepared by magnetron sputtering using TiN and SiC ceramic targets. X-ray diffractometer, scanning electron microscope, energy dispersive spectrometer, high-resolution transmission electron microscope, atomic force microscope and nanoindenter were employed to study the growth, microstructure and mechanical properties of these films. Experimental results revealed that amorphous SiC, which is more favorable under normal sputtering conditions, was forced to crystallize and grew epitaxially with TiN layers at thicknesses of less than 0.8 nm. The resultant films were found to form strong columnar structures, accompanied with a remarkable hardness increment. Maximal nanoindentation hardness as high as 60.6 GPa was achieved when SiC thickness was ∼0.6 nm. A further increase of SiC thickness caused the formation of amorphous SiC, which blocked the epitaxial growth of the multilayers, resulting in the decline of film's hardness. Additionally, investigations on multilayers different in TiN layer thicknesses showed that they are insensitive in both microstructure and hardness to the fluctuation of TiN layer thickness. The formation of epitaxially grown structure between crystalline SiC and TiN layers was found to be responsible for the obtained superhardness in multilayers.     

TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB2调制层厚度的TiN/TiB2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明,在fcc-TiN层(111)生长面的模板作用下,原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态,并与fcc-TiN形成共格外延生长;其界面共格关系为{111}TiN∥{0001}TiB2,〈110〉TiN∥〈1120〉TiB.由于共格界面存在晶格失配度,多层膜中形成拉、压交变的应力场,导致多层膜产生硬度和弹性模量升高的超硬效应,最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度,TiB2形成非晶态并破坏了与TiN层的共格外延生长,多层膜形成非晶TiN层和非晶TiB2层交替的调制结构,其硬度和弹性模量相应降低.     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si3N4层厚度的AlN/Si3N4纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si3N4层在AlN/Si3N4纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si3N4层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si3N4纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si3N4随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si3N4纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关.     

Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers

HfC/Si₃N₄ nanomultilayers with various thicknesses of Si₃N₄ layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si₃N₄ is forced to crystallize and grow coherently with HfC when the Si₃N₄ layer thickness is less than 0.95 nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2 GPa. Further increasing Si₃N₄ layer thickness leads to the formation of amorphous Si₃N₄, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.     

Investigation on microstructure and properties of CrAlN/AlON nanomultilayers

Artificially modulated CrAlN/AlON nanomultilayers were synthesized by direct current reactive magnetron sputtering. The microstructure and mechanical properties were evaluated by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and nano-indentation techniques. The crystallization of AlON layer and its influence on the mechanical property of the nanomultilayers were studied. The results revealed that, under the template effect of NaCl structural CrAlN layer, amorphous AlON was forced to crystallize and grew epitaxially with CrAlN layer when AlON layer thickness was below 0.9 nm, leading to an increase of hardness up to 32.8 GPa. With the further increase of the AlON layer thickness, AlON layer gradually transformed into amorphous structure and blocked epitaxial growth of the multilayers, resulting in the decrease of hardness. The effect of CrAlN layer thickness on hardness of CrAlN/AlON nanomultilayers was also investigated. With the decrease of CrAlN layer thickness, the hardness increased gradually. The maximum hardness was 34.7 GPa when CrAlN layer thickness of was 3.0 nm. The strengthen mechanism of CrAlN/AlON nanomultilayers was finally discussed.     

Effect of λ/2 SiO_2 overcoat on the laser damage of HfO_2/SiO_2 high-reflector coatings

The effect of λ/2 SiO2 overcoat on the laser damage characteristics of HfO2/SiO2 high-reflector (HR) coatings is investigated with 1-on-l and N-on-1 laser damage test methods. The laser damage surface of 1-on-l is analyzed by a step analyzer. The surface morphologies show that laser damage makes the coating damaged area protrudent and rough for HR coating without λ/2 silica overcoat, but concave and smooth for HR coating with A/2 silica overcoat. The result of 10-on-l multi-pulse irradiation on the same point of the coating shows that there is an energy density stage on the damage curve. If the laser energy density is within the range of the stage, HfO2/SiO2 HR coatings with λ/2 silica overcoat will not be damaged more than 2 times for multi-shots, and the surface damages are very slight so that there is no impact on the coating performance. Another interesting result is that the energy density stage extends from the damage threshold to the point of about 3 times of threshold, which is similar to the     

SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源

我们借助傅立叶变换红外光谱（FT－IR）以及光致激发谱（PLE）,研究SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源。谱分析表明,该红外光发射并非起源于纳米锗、硅的量子限制效应以及锗、硅的中性氧空位,而与锗的氧化物紧密相关。PLE的结果证实它们来源于GeO色心TⅡ‘→S0的光学跃迁,给出的GeO电子态模型描述了载流子激发和复合的过程。