Structures of sulfur on TiO2(1 1 0) determined by scanning tunneling microscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction

The temperature dependent adsorption of sulfur on TiO₂(1 1 0) has been studied with X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED). Sulfur adsorbs dissociatively at room temperature and binds to fivefold coordinated Ti atoms. Upon heating to 120°C, 80% of the sulfur desorbs and the S 2p peak position changes from 164.3±0.1 to 162.5±0.1 eV. This peak shift corresponds to a change of the adsorption site to the position of the bridging oxygen atoms of TiO₂(1 1 0). Further heating causes little change in S coverage and XPS binding energies, up to a temperature of 430°C where most of the S desorbs and the S 2p peak shifts back to higher binding energy. Sulfur adsorption at 150°C, 200°C, and 300°C leads to a rich variety of structures and adsorption sites as observed with LEED and STM. At low coverages, sulfur occupies the position of the bridging oxygen atoms. At 200°C these S atoms arrange in a (3×1) superstructure. For adsorption between 300°C and 400°C a (3×3) and (4×1) LEED pattern is observed for intermediate and saturation coverage, respectively. Adsorption at elevated temperature reduces the substrate as indicated by a strong Ti³⁺ shoulder in the XPS Ti 2p_3/2 peak, with up to 15.6% of the total peak area for the (4×1) structure. STM of different coverages adsorbed at 400°C indicates structural features consisting of two single S atoms placed next to each other along the [0 0 1] direction at the position of the in-plane oxygen atoms. The (3×3) and the (4×1) structure are formed by different arrangements of these S pairs.     

Adsorption and reaction of oxygen and deuterium on a Pd(110) surface, studied by Δφ and TDS

The co-adsorption of oxygen and deuterium at 100 K on a Pd(110) surface has been studied by measurements of the change in work function (Δφ) and by thermal desorption spectroscopy (TDS). When the surface with co-adsorbed species is heated, the adsorbates O and D react to form D₂O which desorbs from the surface at T > 200 K. The D₂O desorption peaks shift continuously to lower temperatures as the surface D coverage (θ_D) increases. The maximum production of D₂O is estimated to be 0.26 ML (1 ML = 9.5 × 10¹⁴ atoms cm⁻²), resulting from reaction in a layer containing 0.65 ML D and 0.3 ML O. The maximum work function increase caused by adsorption of D to saturation onto oxygen precovered Pd(110) decreases almost linearly with Δφ_O of the oxygen precovered surface. On a surface with pre-adsorbed D however, the maximum Δφ increase contributed by oxygen adsorption decreases abruptly at Δφ_D > 200 mV. This sharp change occurs at θ_D > 1 ML and is believed to be associated with the development of the reconstructed (1 × 2) phase of D/Pd(110).     

RAS: An efficient probe to characterize Si(0 0 1)-(2 × 1) surfaces

A complete inspection of the capabilities of reflectance anisotropy spectroscopy (RAS) in studying the adsorption of molecules or atoms on the Si(0 0 1)-(2 × 1) surface is presented. First, a direct comparison between RA spectra recorded on the clean Si(0 0 1)-(2 × 1) and the corresponding topography of the surface obtained using scanning tunneling microscopy (STM) allows us to quantify the mixing of the two domains that are present on the surface. Characteristic RA spectra recorded for oxygen, hydrogen, water, ethylene, benzene are compared to try to elucidate the origin of the optical structures. Quantitative and qualitative information can be obtained with RAS on the kinetics of adsorption, by monitoring the RA signal at a given energy versus the dose of adsorbate; two examples are presented: H₂/Si(0 0 1) and C₆H₆/Si(0 0 1). Very different behaviours in the adsorption processes are observed, making of this technique a versatile tool for further investigations of kinetics.     

Adsorption of oxygen on Au(111) by exposure to ozone

Atomic oxygen coverages of up to 1.2 ML may be cleanly adsorbed on the Au(111) surface by exposure to O₃ at 300 K. We have studied the adsorbed oxygen layer by AES, XPS, HREELS, LEED, work function measurements and TPD. A plot of the O(519 eV)/Au(239 eV) AES ratio versus coverage is nearly linear, but a small change in slope occurs at Θ_O=0.9 ML. LEED observations show no ordered superlattice for the oxygen overlayer for any coverage studied. One-dimensional ordering of the adlayer occurs at low coverages, and disordering of the substrate occurs at higher coverages. Adsorption of 1.0 ML of oxygen on Au(111) increases the work function by +0.80 eV, indicating electron transfer from the Au substrate into an oxygen adlayer. The O(1s) peak in XPS has a binding energy of 530.1 eV, showing only a small (0.3 eV) shift to a higher binding energy with increasing oxygen coverage. No shift was detected for the Au 4f_7/2 peak due to adsorption. All oxygen is removed by thermal desorption of O₂ to leave a clean Au(111) surface after heating to 600 K. TPD spectra initially show an O₂ desorption peak at 520 K at low Θ_O, and the peak shifts to higher temperatures for increasing oxygen coverages up to Θ_O=0.22 ML. Above this coverage, the peak shifts very slightly to higher temperatures, resulting in a peak at 550 K at Θ_O=1.2 ML. Analysis of the TPD data indicates that the desorption of O₂ from Au(111) can be described by first-order kinetics with an activation energy for O₂ desorption of 30 kcal mol⁻¹ near saturation coverage. We estimate a value for the Au–O bond dissociation energy D(Au–O) to be 56 kcal mol⁻¹.     

Metallization and demetallization of clean and oxygen-covered ultrathin alkali metal films on GaAs(1 0 0)

The structure and the electronic valence state occupation of ultrathin K, Rb, and Cs films grown on a GaAs(1 0 0)-(4×2) surface have been studied by means of metastable He atom scattering (MHAS), He atom scattering (HAS), and low-energy electron diffraction (LEED) at temperatures ranging from 150 to 400 K. From the survival probability of the scattered He^* atoms, detailed information on the coverage-dependent filling of the alkali metal valence states and their emptying upon subsequent exposure to oxygen were derived. These data reveal for K and Rb a nearly linear band filling with increasing coverage starting at about 0.5 ML whereas a more rapid filling is observed for Cs which is almost completed at about 0.7 ML. Subsequent oxygen adsorption causes a demetallization of the metallic alkali metal monolayers. In case of Cs, a distinct minimum of the He^* signal appears at an oxygen exposure of about 0.8 L, presumably indicating the onset of subsurface oxidation.     

The structure of Na adsorbed on Ge(1 0 0) and its influence on substrate morphology

We investigated the adsorption of sodium on the (1 0 0) surface of germanium with LEED, STM and electron spectroscopy (XPS). Upon adsorption at room temperature a metastable p(4 × 1) and a p(2 × 1) superstructure have been found. Annealing of these structures, accompanied by thermal desorption, results in the formation of a commensurate p(3 × 2) phase after an incommensurate state has been passed. The formation of structures observed after annealing requires the rearrangement of substrate atoms. In addition strong evidence was found that all ordered phases discussed in this paper contain one adsorbate atom per unit mesh.     

The mesoscopic and microscopic structural consequences from decomposition and desorption of ultrathin oxide layers on Si(100) studied by scanning tunneling microscopy

The spatially inhomogeneous decomposition and desorption reaction of oxide layers with coverage 1-0.3 monolayers (ML) from a silicon (100) surface has been studied using scanning tunneling microscopy (STM). After desorption, microscopic changes to the (2 × 1) reconstruction produce two variations on the dimer row reconstruction with decreased surface atom density. A (2 × n) vacancy chain reconstruction and a c(4 × 4) incomplete row reconstruction were observed; a structure for the latter is proposed. Both reconstructions are metastable, reforming the (2 × 1) reconstruction upon heating. At greater length scales during desorption from an initial 1.0 ML coverage, the mesoscopic changes to the surface structure include pitting and roughening, with up to a measured 20 fold increase in the edge density as compared to the clean Si(100) surface.

These structural changes suggest a reaction mechanism involving a substantial rearrangement of the substrate silicon. From an initial 1.0 ML oxygen coverage, using measured void size distributions at total desorption levels of 13% and below — before voids have begun to coalesce — the evolution of void sizes during initial desorption can be followed. A mechanism for desorption is proposed in which silicon atoms must diffuse from adjacent clean surface area to the oxide boundary, producing a reactive complex from which SiO is desorbed. Void growth rates derived from two rate limiting cases for this desorption reaction mechanism can be compared to measured results. We show that the measured void area evolution is consistent with a reaction mechanism where the rate limiting step for monolayer desorption is the promotion of a silicon atom in a lattice site to a mobile monomer within the void.     

Oxygen atom-induced D2 and D2O desorption on D/Si(1 1 1) surfaces

We studied reaction of oxygen atoms with D-terminated Si(1 1 1) surfaces from a desorption point of view. As the D (1 ML)/Si(1 1 1) surface was exposed to O atoms D₂ and D₂O molecules were found to desorb from the surface. The desorption kinetics of D₂ and D₂O molecules exhibited a feature characterized with a quick rate jump at the very beginning of O exposure, which was followed by a gradual increase with a delayed maximum and then by an exponential decrease. The O-induced D₂ desorption spectra as a function of T_s appeared to be very similar to the H-induced D₂ desorption spectrum from the D/Si(1 1 1) surfaces. Possible mechanisms for the O-induced desorption reactions were discussed.     

ESDIAD studies of the structure of TiO2(110)(1 × 1) and (1 × 2) surfaces and interfaces in conjunction with LEED and STM

The TiO₂(110)-(1 × 1) surface and its reconstruction as a (1 × 2) form have been studied with low energy electron diffraction (LEED), electron stimulated desorption ion angular distribution (ESDIAD) and scanning tunnelling microscopy (STM). Oxygen ion desorption occurs within a lobe perpendicular to the (1 × 1) surface, changing to two off-normal lobes for the (1 × 2) reconstruction. This transformation in the ESDIAD pattern is consistent with the added Ti₂O₃ row model of the (1 × 2) reconstruction proposed by Onishi and Iwasawa. STM studies of the stoichiometric and electron irradiated surfaces reinforce the association of the O⁺ ESD contribution with majority sites at the surface. Adsorption of acetic acid on the (1 × 1) surface produces a (2 × 1) overlayed and induces a reconstruction of the underlying substrate. ESDIAD reveals H⁺ ions emitted off-normally from dissociatively adsorbed acetate, and along the surface normal from surface hydroxyls. Adsorption of acetic acid on the (1 × 2) surface does not modify the LEED pattern, but ESDIAD reveals H⁺ desorption with a weaker off-normal contribution consistent with the Ti₂O₃ model of the reconstruction.     

Coverage dependent promoter action: K coadsorption and reactions with CO and CO2 on Pd{1 1 0}

The adsorption of CO and CO₂ on K-predosed Pd{1 1 0} at room temperature has been examined via reflection–absorption infrared spectroscopy (RAIRS). CO₂ adsorbs on 0.37 ML K-predosed Pd{1 1 0} with high sticking probability and a reactive chemisorbed intermediate, CO₂⁻, is detected in RAIRS at room temperature. Reaction of this species ultimately yields carbonate. The same high K precoverage induces dissociation of CO at low CO exposure. Carbonate is detected at higher CO exposure and is probably produced via stepwise oxidation of molecularly adsorbed CO. In contrast at low K precoverage (0.11 ML), CO remains intact but the C–O bond is considerably weakened with respect to CO chemisorbed on clean Pd{1 1 0}. These findings illustrate a dual promoter mechanism of K in the adsorption and reaction of CO or CO₂ at high K coverage. The alkali metal induces dissociation of these molecules and directly participates in the formation of a surface compound, K₂CO₃.     

Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1)

Diffusion length of Ga on the GaAs(0 0 1)-(2×4)β2 is investigated by a newly developed Monte Carlo-based computational method. The new computational method incorporates chemical potential of Ga in the vapor phase and Ga migration potential on the reconstructed surface obtained by ab initio calculations; therefore we can investigate the adsorption, diffusion and desorption kinetics of adsorbate atoms on the surface. The calculated results imply that Ga diffusion length before desorption decreases exponentially with temperature because Ga surface lifetime decreases exponentially. Furthermore, Ga diffusion length L along and [1 1 0] on the GaAs(0 0 1)-(2×4)β2 are estimated to be and L_[110]200 nm, respectively, at the incorporation–desorption transition temperature (T860 K).     

Vanadium oxide nanostructures on Rh(1 1 1): Promotion effect of CO adsorption and oxidation

The adsorption of CO and the reaction of CO with pre-adsorbed oxygen at room temperature has been studied on the (2 × 1)ORh(1 1 1) surface and on vanadium oxideRh(1 1 1) “inverse model catalyst” surfaces using scanning tunnelling microscopy (STM) and core-level photoemission with synchrotron radiation. Two types of structurally well-defined model catalyst V₃O₉Rh(1 1 1) surfaces have been prepared, which consist of large (mean size of 50 nm, type I model catalyst) and small (mean size <15 nm, type II model catalyst) two-dimensional oxide islands and bare Rh areas in between; the latter are covered by chemisorbed oxygen. Adsorption of CO on the oxygen pre-covered (2 × 1)ORh(1 1 1) surface leads to fast CO uptake in on-top sites and to the removal of half (0.25 ML) of the initial oxygen coverage by an oxidation clean-off reaction and as a result to the formation of a coadsorbed (2 × 2)O + CO phase. Further removal of the adsorbed O with CO is kinetically hindered at room temperature. A similar kinetic behaviour has been found also for the CO adsorption and oxidation reaction on the type I “inverse model catalyst” surface. In contrast, on the type II inverse catalyst surface, containing small V-oxide islands, the rate of removal of the chemisorbed oxygen is significantly enhanced. In addition, a reduction of the V-oxide islands at their perimeter by CO has been observed, which is suggested to be the reason for the promotion of the CO oxidation reaction near the metal-oxide phase boundary.     

Surface structure evolution during Sb adsorption on Si(1 1 1)–In(4×1) reconstruction

The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2) structure was observed between 0.5 and 0.7 ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1 ML and Sb atoms rearrange to and (2×1) reconstructions; released In atoms agglomerate into islands of irregular shapes. During the phase transition process from InSb(2×2) to Sb (θ_Sb>0.7 ML), we observed the formation of a metastable (4×2) structure. Possible atomic arrangements of the InSb(2×2) and metastable (4×2) phases were discussed.     

Surface properties of Hafnium diboride(0 0 0 1) as determined by X-ray photoelectron spectroscopy and scanning tunneling microscopy

The surface structure and properties of the HfB₂(0 0 0 1) (Hafnium diboride, HfB₂) surface have been investigated with X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Annealing temperatures above 1900°C produce a sharp (1×1) LEED pattern, which corresponds to STM images showing flat (0 0 0 1) terraces with a very low contamination level separated by steps 3.4 Å in height, corresponding to the separation of adjacent Hf planes in the HfB₂ bulk structure. For lower annealing temperatures, extra p(2×2) spots were observed with LEED, which correspond to intermediate terraces of a p(2×1) missing row structure as observed with STM.     

Mechanism and energetics of dimerization of SiH2 radicals on H-terminated Si(0 0 1)-(2×1) surfaces

The mechanism and energetics are presented of the dimerization of two adsorbed surface SiH₂ groups on the H-terminated Si(0 0 1)-(2 × 1) surface to form Si₂H₄ species during the initial stages of growth in plasma deposition of hydrogenated amorphous silicon (a-Si:H) films. The reactions are observed during classical molecular-dynamics (MD) simulations of a-Si:H film deposition from SiH₂ radical precursors impinging on an initially H-terminated Si(0 0 1)-(2 × 1) surface and substrate temperature, T, over the range 500T700 K. The Si₂H₄ species resulting from the surface SiH₂ dimerization reactions undergo surface conformational changes resulting in either a non-rotated (NRD) or a rotated dimer (RD) configuration. The RD configuration is found to be the energetically favorable one. The MD simulation results for the structure of the NRD and RD surface Si₂H₄ configurations corroborate with ab initio calculations of optimized adsorption configurations of SiH₂ radicals on crystalline Si surfaces, as well as results of STM imaging of the thermal decomposition of disilane on Si(0 0 1).     

Time evolution of interface roughness during thermal oxidation on Si(0 0 1)

The surface morphological change at an initial stage of thermal oxidation on Si(0 0 1) surface with O₂ was investigated as a function of oxide coverage by a real-time monitoring method of Auger electron spectroscopy (AES) combined with reflection high energy electron diffraction (RHEED). At 653 °C where oxide islands grow laterally, protrusions were observed to develop under the oxide islands as a consequence of concurrent etching of the surface. The rate of etching was measured from a periodic oscillation of RHEED half-order spot intensity I_(1/2,0) and I_(0,1/2). At 549 °C where Langmuir-type adsorption proceeds, it was observed that both I_(1/2,0) and I_(0,1/2) decrease more rapidly in comparison with an increase of oxide coverage and the intensity ratio between them decreases gradually with O₂ exposure time. These suggest that Langmuir-type adsorption occurs at sites where O₂ adsorbs randomly, leading to subdivision of the 2×1 and 1×2 domains by oxidized regions, and that Si atoms are ejected due to volume expansion in oxidation to change the ratio between 2×1 and 1×2 domains.     

The reaction of H2S with surface oxygen on Ni(110)

The reactions of H₂S with predosed surface oxygen on Ni(110) surfaces were studied for a variety of coverage conditions. The primary reaction product is H₂O, but the details of the water formation and desorption depends on the coverage of both O and H₂S.

For high coverages of oxygen (p(2 × 1)−O; 0.5 ML), the reaction to form water is quantitative. The loss of oxygen from the surface (as measured by AES) is equal to the increase in sulfur coverage. XPS and HREELS measurements indicate the presence of chemisorbed H₂O immediately following large exposures of H₂S on the oxygen predosed surface at 110 K. Deuterium incorporation results suggest that the primary mechanism for these coverage conditions involves direct transfer of hydrogen from SH or H₂S moieties to the oxygen.

A second mechanism involving reaction of surface hydroxyl groups with surface hydrogen was also identified. This mechanism is particularly important for high coverages of oxygen (0.5 ML) and low coverages of H₂S (0.15 ML), where water desorption was observed at 235 K, but was not observed spectroscopically at 110 K. The sequential addition of two surface hydrogen atoms to surface oxygen is not an important mechanism in this system.

These reactions were modeled using a bond-order conservation method, and the model successfully reproduced the important mechanistic conclusions.     

Tensor LEED analysis for the electrodeposited Pt(1 1 1)-(3×3)–Ag,I surface structure

A crystallographic analysis is reported using low-energy electron diffraction (LEED) in the tensor LEED approach for the electrodeposited coadsorption (3×3) structure with 4/9 monolayer (ML) of silver and 4/9 ML of iodine on the Pt(1 1 1) surface. The structure approximates a two-layer slice of bulk AgI cut parallel to its (1 1 1) plane and superimposed on the substrate with the Ag atoms in contact with the topmost Pt(1 1 1) layer, and the I atoms forming an overlayer on the Ag atoms. There are two types of Ag atoms in the (3×3) unit mesh; one type bonds to a single Pt atom, while the other type bonds to three Pt atoms. The average Ag–Pt bond distances are close to 2.48 and 2.82 Å respectively for the one and three-coordinate Ag atoms, but both types of Ag atoms bond to three I atoms with an average Ag–I distance of 2.67 Å. No significant corrugation is observed for either the I layer or the Ag layer.     

Enhanced transient reactivity of an O-sputtered Au(1 1 1) surface

The interaction of SO₂ with oxygen-sputtered Au(1 1 1) (θ_oxygen  0.35 ML) was studied by monitoring the oxygen and sulfur coverages as a function of SO₂ exposure. The morphology of the sputtered Au is relatively smooth on a long length scale, but rough on a finer scale with islands averaging 15 nm. The rough surface is not stable to scanning with the STM. Two reaction regimes were observed: oxygen depletion followed by sulfur deposition. An enhanced, transient sulfur deposition rate is observed at the oxygen depletion point. This effect is specifically pronounced if the Au surface is continuously exposed to SO₂. The enhanced reactivity towards S deposition seems to be linked to the presence of highly reactive, under-coordinated Au atoms. Adsorbed oxygen appears to stabilize, but also to block these sites. In absence of the stabilization effect of adsorbed oxygen, i.e. at the oxygen depletion point, the enhanced reactivity decays on a timescale of a few minutes. These observations shed a new light on the catalytic reactivity of highly dispersed gold nanoparticles.     

LEED studies of the adsorption of CO2 on thin epitaxial NaCl(100) films

The adsorption of CO₂ on the NaCl(100) surface was studied with a high-resolution LEED-system. Measurements without charging up at low electron energies and without damage by the e-beam could be performed by using ultrathin epitaxial films on a conducting Ge(100) substrate. The adsorption behavior was recorded as a function of time and pressure at constant substrate temperatures of 78 and 83 K and CO₂ partial pressures from 4 × 10⁻⁸−2 × 10⁻³ Pa. The adsorption system shows a first-order two-dimensional phase transition to a (2 × 1) superstructure including glide planes (herringbone-like structure) at p = 7.2 × 10⁻⁸Pa (T = 78 K). The condensation of the CO₂ solid is starting at p = 1.5 × 10⁻⁴ Pa (T = 78 K). The LEED-pattern shows in this c(2 × 2) superstructure, which corresponds to the pyrite-like structure of the CO₂ solid. Both observed superstructures are commensurable with the NaCl(100) surface. Observation of island growth shows that the domains of the (2 × 1) superstructures have already at coverage of 5% of a monolayer an average lateral size of at least 200 A.