Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Microstructure and electrical properties of lead zirconate titanate thin films deposited by sol-gel method on La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrate

(La_0.7Sr_0.3)MnO₃ thin films were deposited on SiO₂/Si substrates by a metal-organic decomposition (MOD) method, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were grown on (La_0.7Sr_0.3)MnO₃-coated SiO₂/Si substrates by a sol-gel method. The effects of annealing temperature on the crystalline phases, microstructures and electrical properties of the PZT films were investigated. X-ray diffraction analysis results indicated that the PZT films with a perovskite single phase could be obtained by annealing at 650°C. The dielectric constant and the remnant polarization of the PZT films increased with increasing annealing temperature. The remnant polarization and the coercive field of the films annealed at 650°C were 18.3 μC/cm² and 35.5 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.81, respectively.     

Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 thin films prepared by modified sol–gel process

80%Pb(Zn_1/3Nb_2/3)O₃–20%PbTiO₃ (PZN–PT) thin films have been prepared on Pt/Ti/SiO₂/Si substrates using a modified sol–gel method. In our method, niobium pentaoxide is used as a substitution instead of niobium ethoxide which is moisture-sensitivity and much more expensive. Microstructure and electrical properties of PZN–PT thin films have been investigated. X-ray diffraction analysis shows that proper annealing temperature of PZN–PT thin films is 600 °C. The PZN–PT thin films annealed at 600 °C are polycrystalline with (111)-preferential orientations. Field-emissiom scanning electron microscope analysis revealed PZN–PT thin films possess well-defined and crack-free microstructure. The thickness of thin films is 290 nm. The Pt/PZN–PT/Pt capacitors have been fabricated and it presents ferroelectric nature. The remanent polarization (Pr), spontaneous polarization (Ps), and the coercive electric field (Ec) are 8.71 μC/cm², 43.06 μC/cm², and 109 kV/cm at 1 MHz, respectively. The dielectric constant (ε_r) and the dissipation factor (tan δ) are about 500.3 and 0.1 at 1 kHz, respectively.     

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr_0.52Ti_0.48)O₃. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750–800 at 1 KHz was obtained for thin films of 0.3 µm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm² with a coercive field of 60 kV/cm.     

Microstructure and ferroelectric properties of r.f. magnetron sputtering derived PZT thin films deposited on interlayer (PbO/TiO2)

Lead zirconate titanate (PZT) thin films were deposited on Pt/Ti/SiO₂/Si and interlayer/Pt/Ti/SiO₂/Si substrate by radio frequency (r.f.) magnetron sputtering with a Pb_1.1Zr_0.53Ti_0.47O₃ target. The crystallization of the PZT thin films was formed only by substrate temperature. When interlayer (PbO/TiO₂) was inserted between the PZT thin film and the Pt electrode, the grain growth and processing temperature of the PZT thin films were considerably improved. Compared to PZT/Pt structure, the dielectric constant and polarization properties of the PZT/interlayer/Pt structure were fairly improved. In particular, PZT/interlayer/Pt at the substrate temperature of 400 °C showed prevalent ferroelectric properties (_r=475.97, tanδ=0.0591, P_r=23 μC/cm²). As a result of an X-ray photoelectron spectroscopy (XPS) depth-profile analysis, it was found that PZT/interlayer/Pt deposited only by substrate temperature without the post-annealing process via r.f. magnetron sputtering method remained independent of each other regardless of substrate temperatures.     

Enhanced ferroelectric,dielectric and leakage properties in Ce and Ti co-doping BiFeO3 thin films

Pure BiFeO₃ (BFO), Ce and Ti individual doping and co-doping BiFeO₃ thin films were fabricated via sol–gel process on Pt/Ti/SiO₂/Si substrates. The microstructure, surface morphology, ferroelectric and dielectric properties of BFO and doped thin films were investigated in detail. X-ray diffraction reveal that all thin films are confirmed the formation of the distorted rhombohedral perovskite structure. No impure phase is identified in all the films. The Ce and Ti co-doping BiFeO₃ (BCFTO) thin films exhibited the enhanced ferroelectricity with a large remnant polarization (2P _r) of 130 μC/cm², and low leakage current density of 9.10 × 10^?6 A/cm² which is more than two orders of magnitude lower than that of pure BFO films at 100 kV/cm. The dielectric constant (364 at 1 kHz) of the BCFTO thin films is much larger than that of pure BFO thin films. These results suggest that the introductions of Ce and Ti provides an effective route for improving the ferroelectric, dielectric and leakage properties of BFO thin films.     

Sol-gel processing and properties of cerium doped Barium Strontium Titanate thin films

A stock solution sol-gel based method for making Barium Strontium Titanate (BST) thin films has been developed. A modified titanium alkoxide was combined with a barium and/or strontium inorganic salt in methoxyethanol and ethylene glycol to form the solution. The effect of chemistry on the stability of this BST solution is discussed. The crystallization temperature of 700–725°C for rapid thermally processed films dropped by 100°C using cerium doping. The permittivity for undoped films was 250 and doping by 3 at. % Ce increased the dielectric constant by 20%. A remanent polarization of approximately 0.5 C/cm² and coercive field of 28 kV/cm were measured for the undoped films. The leakage current densities were <10 nA/cm² at E=60 kV/cm and improved for cerium concentrations up to 3 at. %. The charge storage density was 50 fF/m² at 200 kV/cm and the DC breakdown voltage was 300 kV/cm for Ce doped films.     

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

Preparation and dielectric properties of highly preferred-(100) orientation (Pb,La)(Zr,Ti)O<Subscript>3</Subscript> antiferroelectric thick films by sol–gel processing

Pb_0.97La_0.02Zr_0.95Ti_0.05O₃ (PLZT) antiferroelectric thick films of highly preferred-(100) orientation with different thickness were successfully deposited on Pt(111)/Ti/SiO₂/Si(100) substrates depending on the sol–gel process technique. The effects of the PLZT thick films in the preparation and electric properties are investigated. The films show polycrystalline perovskite structure with a (100) preferred orientation by X-ray diffractometer analyses. The antiferroelectric nature of the thick films is demonstrated by P (polarization)–E (electric field). The temperature dependence of the dielectric constant and dielectric loss displays the similar behavior in both cases at 100 kHz while the values of polarization characteristic are decreased with the increase of the film thickness. The phase switching current are studied as a function of a gradually change dc electric field and the voltage dependent current density of the most highly (100)-oriented PLZT film is 1.49 × 10⁻⁸ A/cm² over electric field range from 0 to ±261 kV/cm. The film at 2,498 nm exhibits excellent dielectric properties and highly preferred-(100) orientation.     

Preparation of PZT Thick Films by an Interfacial Polymerization Method

Pb(Zr_0.53Ti_0.47)O₃ (PZT) films of 10 to 50 m in thickness were prepared by a new sol-gel process using an interfacial polymerization technique. The interfacial polymerization process is that an alkoxide precursor solution is poured on the surface of water in a container to form a gel film at the interface between the two immiscible liquids. The precursor solution was prepared by adding PZT alkoxide solution, PZT powders coated with Pb₅Ge₃O₁₁ (PG), and a surfactant into hexane solvent. After the polymerization at the interface, the gel films were gently placed on a silicon substrate by draining the water in the container. The gel films containing PZT powders were sintered at 950°C for 10 min to obtain crystallized PZT films. The remanent polarization of a PZT thick film was 33.1 C/cm². The piezoelectric d ₃₃ constant measured with a Mach-Zehnder interferometer was 225 pm/V and was independent of frequency from 0.2 to 3 kHz.     

Dielectric,ferroelectric and optical properties of BaZr<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>O<Subscript>3</Subscript> thin films prepared by sol–gel-hydrothermal process

BaZr_0.2Ti_0.8O₃ thin films on Pt/Ti/SiO₂/Si substrates have been fabricated under low temperature conditions by a sol–gel-hydrothermal technique. The dielectric constant is 247–83 in the frequency range of 1 kHz–1 MHz. The corresponding dielectric loss is ~10⁻². The capacitance–voltage curve shows strong non-linear dielectric behavior leading to a high tunability, up to ~30% at 1 kHz. The remanent polarization and coercive field at room temperature are measured to be ~1.5 μC/cm² and ~90 kV/cm. The infrared optical properties of the thin films are investigated using an infrared spectroscopic ellipsometry in the wave number range of 800–4,000 cm⁻¹. Optical constants of the thin films are simultaneously obtained.     

Preparation of highly (111)-oriented (Pb,La)(Zr,Sn,Ti)O<Subscript>3</Subscript> (PLZST) antiferroelectric thin films by modified sol-gel process using a novel tin source,dibutyloxide of tin

Highly (111)-oriented Pb_0.97La_0.02Zr_0.85Sn_0.13 Ti_0.02O₃(PLZST) antiferroelectric thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates through a modified sol-gel process technique. The electric field-induced antiferroelectric-to-ferroelectric (AFE‐FE) phase transformation behaviour was examined by C-V measurement. The results indicated that antiferroelectric (AFE) to ferrroelectric (FE) switching field , FE to AFE switching field were 315 kV/cm and 240 kV/cm respectively. The temperature dependence of the dielectric constant showed that the Curie temperature (T _c) of the PLZST antiferroelectric thin films was 171°C. The voltage dependent current density of the highly (111)-oriented PLZST film was less than 1.3 × 10⁻⁶ A/cm² over electric field range from 0 to ± 427 kV/cm.     

Dielectric and Ferroelectric Properties of Sol-Gel Derived YMnO3 Films

There has been considerable interest in ferroelectric (FE) films especially for non-volatile memories and ultra high density DRAM applications. Such FE films typically consist of lead zirconate titanate (PZT) with novel oxide contacts, or layered perovskite such as Sr2Bi2TaO9. Recently, there have been reports of sputtered YMnO3 films which exhibit a single polarization axis and do not contain any volatile species of Pb or Bi. Single crystal YMnO3 exhibits satisfactory polarization (6 C/cm2) and low coercive field (<20 kV/cm). Additionally, the dielectric constant of YMnO3 is quite low (<30) which should facilitate ferroelectric switching. In this study, sol-gel derived YMnO3 films were prepared on platinized Si wafers and their dielectric and ferroelectric properties were characterized. Their electrical properties will be discussed with respect to Y/Mn stoichiometry ratio, hexagonal phase development and processing conditions. The potential of YMnO3 as a material in non-volatile memories is evaluated.     

Dielectric,Ferroelectric Properties of KTa0.65Nb0.35O3 Thin Films Prepared by Sol-Gel Process on Pt(111)/Ti/MgO(100) Substrates

KTa_0.65Nb_0.35O₃(KTN) thin films were prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates from KOAc, Ta(OC₂H₅)₅ and Nb(OC₂H₅)₅ in ethanol. The KTN thin films had a prefferred (100) orientation on Pt(111)/Ti/MgO(100) substrates and contained a small amount of pyrochlore structure phase. The 0.8-m-thick KTN film showed a room-temperature relative permittivity of 2160 and a room-temperature dielectric loss of 0.0098 at 1.0 kHz. The maximum relative permittivity of the KTN film was 4232 at 294 K and 1.0 kHz. The remanent polarization and coercive field of the KTN film were 2.8 C/cm² and 5.0 kV/cm, respectively, at 263 K.     

Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

The effects of Tb substitution on the structural and electrical properties of ferroelectric Bi₄Ti₃O₁₂ (BTO) thin films grown on Pt/TiO₂/SiO₂/Si substrates by a sol–gel process have been reported. X-ray diffraction indicated A-site Tb substitutions did not change the polycrystalline bi-layered Aurivillius structure of the BTO, but a lattice distortion was observed. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10^?2 to 10^?4 A/cm² with the increase of x under 150 kV/cm. The remnant polarization (2P _r ) and dielectric constant (ε _r) increase firstly and then decreases with the increase of the Tb content. We observed a substantial increase in the remnant polarization (2P _r ) with Tb substitution and obtained a maximum value of~60 μC/cm² at an applied electric field of 500 kV/cm for x = 0.4. Moreover, this BTT-0.4 capacitor did not show fatigue behaviors after 1.0 × 10¹⁰ switching cycles, suggesting an anti-fatigue character.     

First principles studies of SnTiO3 perovskite as potential environmentally benign ferroelectric material

In the context of the search for environment-respectful, lead- and bismuth-free chemical compounds for devices such as actuators, SnTiO₃ (ST) is investigated from first principles within DFT. Full geometry optimization provides a stable tetragonal structure relative to cubic one. From the equation of state the equilibrium volume of SnTiO₃ is found smaller than ferroelectric PbTiO₃ (PT) in agreement with a smaller Sn²⁺ radius. While ionic displacements exhibit similar trends between ST and PT, a larger tetragonality (c/a ratio) for ST results in a larger polarization, P_ST = 1.1 Cm⁻². Within ST analyzes of site projected density of states and chemical bonding indicate a reinforcement of the bond covalence with respect to Pb homologue. Both PT and ST exhibit anomalous large effective charges and the dielectric constant of ST is calculated larger than PT.     

Sol-Gel Derived Ferroelectric Thin Films: Avenues for Control of Microstructural and Electric Properties

The paper presents short review of the works performed during the last few years in the field of the alkoxy-derived ferroelectric films. PZT films were prepared using titanium and zirconium alkoxides and Pb(CH₃COO)₂· 2H₂O as precursors. Different way of lead acetate dehydration and the impact of lead excess in the precursor solutions on the properties of the PZT films are discussed. Trimetallic alkoxide systems Bi(OR)₃-Ta(OR)₅-ROH (R = Me, Et or ⁱ Pr) were studied as precursors for preparation of SrBi₂Ta₂O₉ films. Films prepared from these solutions and annealed at the temperature between 700 and 750°C demonstrated the remanent polarization P_r* – P^{^} _r = 7–9 C/cm². Ba_1-xSr_xTiO₃ films we applied from modified alkoxide solutions. Decomposition of the organic phase in the course of thermal treatment of the films is studied by IR-spectroscopy. The dependence of the dielectric permittivity of the films via the annealing temperature is reported. Preparation of LiNbO₃, SrZr_0.2Ti_0.8O₃, Zr_0.8Sn_0.2TiO₄ is briefly discussed.     

Electrorheology and characterization of acrylic rubber and lead titanate composite materials

Oxide one‐pot synthesis was used to synthesize a polymer precursor to lead titanate, PbTiO₃. Perovskite lead titanate, PbTiO₃, was synthesized via the sol–gel process. The dielectric constant, electrical conductivity and loss tangent of our acrylic rubber (AR71)–lead titanate (PT) composite material (AR/PT_8) were 14.15, 2.62 × 10^?7/Ω m, and 0.093, respectively, measured at 27 °C and 1000 Hz. SEM micrographs of composites between the AR71 elastomer and PbTiO₃ showed that the particles were reinforced within the matrix. The electrorheological properties of the AR71/PT composites were investigated as functions of electric field strength from 0 to 2 kV/mm and PbTiO₃ particle volume fraction. The storage modulus increased linearly with particle volume fraction, with or without an electric field. Without an electric field, the particles merely acted as a filler to absorb or store additional stress. With the electric field on, particle‐induced dipole moments were generated, leading to interparticle interactions, and thus a substantial increase in storage modulus. With PbTiO₃ particle volume fractions as small as 10^?4 embedded in the elastomer matrix, the modulus increased by nearly a factor of 2 as the electric field strength varied from 0 to 2 kV/mm. Copyright © 2008 John Wiley & Sons, Ltd.