Electromagnetic wave absorption properties of ε-Fe3N/Y2O3 nanocomposites derived from Y2Fe17 intermetallic compound

The electromagnetic wave absorption properties of ε-Fe₃N/Y₂O₃ nanocomposites were characterized in a frequency range of 0.05–20.05 GHz. The imaginary part of relative permeability μ_r″ exhibited “twin peak” dispersion and μ_r″ value retained high over a 0.5–10 GHz range. The real part (ε_r′) and imaginary part (ε_r″) of relative permittivity almost kept a low constant in a region of 0.5–10 GHz, respectively. As a result, the resin composites with 51 vol% ε-Fe₃N/Y₂O₃ powders exhibited excellent electromagnetic wave absorption properties (RL<−20 dB) in a frequency range of 0.6–4.4 GHz, with a thickness of 3.3–19.3 mm. A minimum reflection loss of −55 dB was observed at 1.8 GHz with an absorber thickness of 7.05 mm.     

Structure and magnetic properties of co-sputtered Co–C thin films

We studied the structure and magnetic properties of co-sputtered Co_1−xC_x thin films using a transmission electron microscope (TEM) and a SQUID magnetometer. These properties were found to depend critically on deposition temperature, T_S, and composition, x. Generally, phase separation into metallic Co and graphite-like carbon phases proceeds with increasing T_S and decreasing x. Plan view and cross-sectional TEM images of the films prepared showed that Co grains about 10–20 nm in diameter and 30–50 nm in height are three-dimensionally separated by graphite-like carbon layers 1–2 nm thick. Optimum magnetic properties with saturation magnetization of 380 emu/cc and coercivity of 400 Oe were obtained for a film with x=0.5 and T_S=350°C.     

The static and dynamic screening of power loss of a two-dimensional electron gas

Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of a two-dimensional electron gas in GaAs/Ga_1 − xAl_xAs quantum-well structures are compared with theoretical models that involve piezoelectric and deformation-potential scattering and the effects of static and dynamic screening of the electron–acoustic phonon interaction. It is shown that screening only slightly modifies the predictions of the approximate calculations.     

Enhanced mangnetoelectric voltage in multiferroic particulate Ni0.83Co0.15Cu0.02Fe1.9O4−δ/PbZr0.52Ti0.48O3 composites – dielectric,piezoelectric and magnetic properties

Multiferroic particulate composites of Ni_0.83Co_0.15Cu_0.02Fe_1.9O_4−δ– NCCF and lead zirconate titanate (PZT) were prepared conventional ceramic method. The generic formulae x NCCF + (1−x) PZT where x = 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6 mole fractions. The presence of two phases in multiferroic was confirmed with XRD technique. The dielectric constant and loss tangent were studied as a function of frequency (100 Hz to 1 M Hz) and temperature (30–500 °C). The piezoelectric coefficient d₃₃ were also studied on these particulate composites. The hysteresis behaviour was studied to understand the magnetic properties such as saturation magnetization (Ms) and magnetic moment (μ_B). The static magnetoelectric (ME) voltage coefficient was measured as a function of dc magnetic bias field. A high value of ME output (3151 mV/Oe.cm) was obtained in the composite containing 50% highly magnetostrictive ferrite component NCCF – 50% highly piezoelectric ferroelectric component PZT. These multiferroic particulate composites are used as phase shifters, magnetic sensors, cables etc.     

Flux pinning and superconducting properties of melt-textured NEG-123 superconductor with TiO2 addition

We studied the effect of TiO₂ doping on flux pinning and superconducting properties of a melt-grown (Nd_0.33Eu_0.33Gd_0.33) Ba₂Cu₃O_y + 35 mol% Gd₂BaCuO₅ (70 nm in size) composite (NEG-123) processed in Ar–1% O₂ atmosphere. As indicated by similar, sharp superconducting transitions, the small quantities of TiO₂ used in our experiments did not deteriorate superconducting properties of the NEG material. Transmission electron microscopy (TEM) analysis found 20–50 nm Ti-based particles in the NEG-123 matrix. However, we have not observed the clouds of <10 nm sized particles in the NEG-123 matrix, as in the case of recently reported NEG-123 composites doped by Mo and Nb nanoparticles. Nevertheless, quite a good J_c–B performance in the 0.1 mol% Ti-doped sample, namely 550 kA/cm² at the self-field and at the secondary peak field (4.5 T) was achieved at 65 K, while 320 kA/cm² was obtained at zero-field at 77 K, and 50 kA/cm² at 90.2 K. The pinning effectiveness decreased with increasing Ti content above 0.2 mol%. The analysis of the pinning force showed that higher concentration of Ti (>0.2 mol%) increased the amount of normal pins (δl pinning), indicated by the Fp(h) peak shift from h = 0.42–0.36. The maximum pinning effect in a broad field range could be achieved by optimizing Ti content and adding sub-micron Gd-211 particles.     

Increase of critical current density with doping carbon nano-tubes in YBa2Cu3O7−δ

The effects of carbon nano-tubes (CNTs) on the crystal structure and superconducting properties of YBa₂Cu₃O_7?δ (Y-123) compound were studied. Samples were synthesized using standard solid-state reaction technique by adding CNT up to 1 wt% and X-ray diffraction data confirm the single phase orthorhombic structure for all the samples. Current–voltage measurements in magnetic fields up to 9 T were used to study the pinning energy U_J and critical current density J_c as a function of magnetic field at fixed temperature. We find that while T_c does not change much with the CNT doping (91–92 K), both U_J and J_c increase systematically up to 0.7 wt% CNT doping in a broad magnetic field ranges between 0.1 and 9 T and J_c in the 0.7 wt% CNT doped sample is at least 10 times larger than that of the pure Y-123. The scanning electron microscope image shows that CNTs are forming an electrical-network between grains. These observations suggest that the CNT addition to the Y-123-compounds improve the electrical connection between superconducting grains to result in the J_c increase.     

Microwave properties of DyBCO monodomain in the mixed state and comparison with other RE-BCO systems

We report on microwave measurements on DyBa₂Cu₃O_7?δ monodomains grown by the top-seeded melt-textured technique. We measured the field increase of the surface resistance R_s(H) in the a–b plane at 48.3 GHz. Measurements were performed at fixed temperatures in the range 70 K–T_c with a static magnetic field μ₀H < 0.8 T parallel to the c-axis. Low field steep increase of the dissipation, typical signature of the presence of weak links, is absent, thus indicating the single-domain behavior of the sample under study. The magnetic field dependence of R_s(H) is ascribed to the dissipation caused by vortex motion. The analysis of X_s(H) points to a free-flow regime, thus allowing to obtain the vortex viscosity as a function of temperature. We compare the results with those obtained on RE-BCO systems. In particular, we consider strongly pinned films of YBa₂Cu₃O_7?δ with nanometric BaZrO₃ inclusions.     

Dielectric properties of PIN–PT ceramics under compressive stress

Lead indium niobate, Pb(In_1/2Nb_1/2)O₃ or (PIN), is an interesting ferroelectric material, because it can be changed from a disordered state to ordered state by long-time thermal annealing. However, the temperature related to the maximum dielectric constant (T_max) of PIN in relaxor phase is low (at 1 kHz, T_max = 66 °C). In this study, to increasing T_max of PIN, lead titanate, PbTiO₃(PT) was thus added to PIN with compositions (1 − x)PIN–xPT (for x = 0.1–0.5). The influence of stress on the dielectric properties of (1 − x)PIN–xPT ceramics was then investigated. The dielectric properties were measured under various uniaxial compressive stress up to 400 MPa. The results showed that the superimposed compression load reduced the dielectric constant in 0.9PIN–0.1PT. For the other compositions, the dielectric constants first increased with the compressive stress, and then decreased when the stress was further increased up to 400 MPa. The dielectric loss tangent of all composition was found to decrease with increasing compressive stress.     

Structure and magnetic properties of 300-nm-thick FePt films with Hf underlayer

Structure, microstructure, magnetic properties of 300-nm-thick FePt films with 10-nm-thick Hf underlayer have been studied. The experimental results showed that the very thin Hf underlayer could promote the ordering at reduced temperatures by facilitating the nucleation of the order phase, leading to refined grain size and magnetic domain size. Therefore, the permanent magnetic properties of FePt films were enhanced. (BH)_max and H_c of FePt films were greatly enhanced from 5.0–21.0 MGOe and 1.4–11.0 kOe for single layer to 10.2–23.6 MGOe and 4.5–13.2 kOe for Hf-underlayered films annealed in T_a region of 400–600 °C, respectively. Nevertheless, the severe interdiffusion between the Hf and FePt layers at T_a=800 °C resulted in the decreased S, coarsened surface morphology, grain and magnetic domain sizes, and therefore the slightly decreased (BH)_max to 18.0 MGOe.     

Modified Lanthanum Zirconium Oxide buffer layers for low-cost,high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La₂Zr₂O₇ (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO₂ cap/YSZ barrier/Y₂O₃ seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La₂O₃–ZrO₂ system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La_xZr_1?xO_y (x = 0.2–0.6) on standard Y₂O₃ buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in La_xZr_1?xO_y. Both CeO₂ cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, I_c of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on La_xZr_1?xO_y (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La_xZr_1?xO_y (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, J_c, of 0.55 MA/cm² (I_c of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.     

Effects of Zr/Ti ratio on dielectric and ferroelectric properties of 0.8Pb(ZrxTi1−x)O3–0.2Pb(Co1/3Nb2/3)O3 ceramics

The influences of Zr/Ti ratio on electrical properties of the 0.8Pb(Zr_xTi_1−x)O₃–0.2Pb(Co_1/3Nb_2/3)O₃ ceramics prepared by a mixed-oxide method (with x = 0.46, 0.48, 0.50, 0.52, and 0.54) have been investigated in order to identify the morphotropic phase boundary composition in this system. With XRD analysis, the crystal structure of dense specimens appeared to change gradually from tetragonal to rhombohedral with increasing Zr content. The dielectric properties measurements showed a maximum dielectric constant at x = 0.50, while the transition temperature decreased with increasing Zr content in the system. Moreover, all ceramics showed diffused phase transition behaviors with a minimum diffusivity at x = 0.50. In addition, the Polarization–Electric field (P–E) hysteresis loops of the ceramic systems also changed significantly with the Zr content. Interestingly, the loop squareness parameter reached maximum around x = 0.50. Other ferroelectric hysteresis parameters showed noticeable change at x = 0.50. These results clearly showed the significance of Zr/Ti ratio in controlling the electrical properties of the PZT–PCN ceramic systems.     

Optical properties of PMN–PT thin films prepared using pulsed laser deposition

(1 ? x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ (PMN–PT) thin films have been deposited on quartz substrates using pulsed laser deposition (PLD). Crystalline microstructure of the deposited PMN–PT thin films has been investigated with X-ray diffraction (XRD). Optical transmission spectroscopy and Raman spectroscopy are used to characterize optical properties of the deposited PMN–PT thin films. The results show that the PMN–PT thin films of perovskite structure have been formed, and the crystalline and optical properties of the PMN–PT thin films can be improved as increasing the annealing temperature to 750 °C, but further increasing the annealing temperature to 950 °C may lead to a degradation of the crystallinity and the optical properties of the PMN–PT thin films. In addition, a weak second harmonic intensity (SHG) has been observed for the PMN–PT thin film formed at the optimum annealing temperature of 750 °C according to Maker fringe method. All these suggest that the annealing temperature has significant effect on the structural and optical properties of the PMN–PT thin films.     

Large spontaneous Hall angle in [Co,CoFe/Pt] multilayer

We have quantitatively investigated the Hall effect in [Co, CoFe/Pt] multilayer films. The [Co, CoFe/Pt] multilayers exhibit large spontaneous Hall resistivity (ρ_H) and Hall angle (ρ_H/ρ). Even though the Hall resistivity in [Co, CoFe/Pt] multilayer films (2.7–4 × 10⁻⁷ Ω cm) is smaller than that of amorphous RE–TM alloy films which show large spontaneous Hall resistivity (<2 × 10⁻⁶ Ω cm), the Hall angle of multilayer (6–8%) is almost twice than that in amorphous rare earth–transition metal alloy films (∼3%). The Hall angle provides evidence of the effects of the exchange interaction of the Hall scattering. The exchange is between conduction electron spins and the localized spins of the transition metal. The large Hall angle of [Co, CoFe/Pt] multilayer can be considered due to the high spin polarization and high Curie temperature of Co and CoFe transition metal layers. Even though the role of interfaces and surfaces in the magnetic properties of multilayer films may dominate that of the bulk, the Hall effects in [Co, CoFe/Pt] multilayer may be mainly dominated by the bulk effect.     

Pressure effect on magnetic properties of RCo12B6 (R=Y,Ce) compounds

The effect of pressure on magnetic properties of YCo₁₂B₆ and CeCo₁₂B₆ was studied in temperature range 5–300 K at pressures up to 9 kbar. The Curie temperature T_C and spontaneous magnetization M_S decrease with pressure for both compounds. The decrease can be attributed mostly to the volume dependence of both, the Co magnetic moment and the exchange interactions. The hybridization of the p–d states as a consequence of small distances between the Co and B atoms can be one reason of the relatively low pressure effects (ΔT_C/Δp=?0.39±0.02 K/kbar, d ln M_S/dp=?0.0013±0.0002 kbar^?1) in YCo₁₂B₆. Higher volume sensitivity of magnetic properties of CeCo₁₂B₆ in comparison with YCo₁₂B₆ can be attributed to the pressure induced changes of the Ce f- and Co d-states.     

Effect of oxygen partial pressure on the structure and properties of Cu–Al–O thin films

We have studied the electrical and optical properties of Cu–Al–O films deposited on silicon and quartz substrates by using radio frequency (RF) magnetron sputtering method under varied oxygen partial pressure P_O. The results indicate that P_O plays a critical role in the final phase constitution and microstructure of the films, and thus affects the electrical resistivity and optical transmittance significantly. The electrical resistivity increases with the increase of P_O from 2.4 × 10^?4 mbar to 7.5 × 10^?4 mbar and afterwards it decreases with further increasing P_O up to 1.7 × 10^?3 mbar. The optical transmittance in visible region increases with the increase of P_O and obtains the maximum of 65% when P_O is 1.7 × 10^?3 mbar. The corresponding direct band gap is 3.45 eV.     

Growth of Cu0.5Tl0.5Ba2Ca3Cu4−yZnyO12−δ superconductor with optimum carriers

We have tried to vary the carriers concentration in Cu_0.5Tl_0.5Ba₂Ca₃Cu_4?yZn_yO_12?δ (y = 0, 1, 1.5, 2, 2.5) superconductor with the help of post-annealing experiments carried out in nitrogen, oxygen and air and to investigate its effects on the superconductivity parameters. The zero resistivity critical temperature [T_c(R = 0)], the magnitude of diamagnetism and critical current [I_c(H = 0)] are found to increase in Zn free samples after post-annealing in oxygen and air, while these superconducting properties have been suppressed after post-annealing in nitrogen at 550 °C for 6 h. The post-annealing of Zn-doped samples in air has marginally increased the superconducting properties, while these properties have been suppressed after post-annealing in nitrogen and oxygen. These studies have led us to the definite conclusion that the Zn-doped material has grown with optimum carriers concentration.     

Investigation on the interactions of silymarin to bovine serum albumin and lysozyme by fluorescence and absorbance

The interactions of silymarin with bovine serum albumin (BSA) and lysozyme (LYS) were investigated in physiological buffer (pH = 7.4) by fluorescence spectroscopy and UV–vis absorption spectroscopy. The mechanism study indicated that silymarin could strongly quench the intrinsic fluorescence of BSA and LYS through static quenching procedures. At 291 K, the values of the binding constant K_A were 4.20×10⁴ and 4.71×10⁴ L mol^?1 for silymarin–BSA and silymarin–LYS, respectively. Using thermodynamic equations, the conclusion that hydrophobic and electrostatic forces played an important role in stabilizing complex of silymarin–BSA or silymarin–LYS was obtained. The effects of Cu²⁺, Mg²⁺, Ca²⁺, Fe²⁺, and Fe³⁺ on the binding were also studied at 291 K. According to Förster’s nonradiative energy transfer theory, the distances r₀ between donor and acceptor were calculated to be 3.36 and 2.71 nm for silymarin–BSA and silymarin–LYS, respectively. Synchronous fluorescence spectra showed that the conformation of BSA and LYS were changed by silymarin.     

Many-body properties of a disordered charged Bose gas superlattice

We study some many-body properties of a disordered charged Bose gas (CBG) superlattice—an infinite array of CBG layers each of which containing disorder. The latter is assumed to cause collisions with the charged bosons, the effect of collisions being taken into account through a number-conserving relaxation time approximation incorporated within the random phase approximation (RPA) at T =  0. We go beyond the RPA and include a local-field correction G(q, q_z) which is assumed to be collision independent, as an approximation. The resulting density–density correlation function is then used to calculate a number of many-body quantities of physical interest, e.g. (a) collective modes, (b) static structure factor, (c) energy-loss function, (d) plasmon density of states, and (e) ground-state energy. The effects of collisions on these quantities are discussed, and the results are compared with the corresponding results for an electron gas superlattice.     

Influence of the selenium content on thermo-mechanical and optical properties of Ge–Ga–Sb–S chalcogenide glasses

A number of Ge₁₇Ga₄Sb₁₀S_69−xSe_x (x = 0, 15, 30, 45, 60, and 69) chalcogenide glasses have been synthesized by a melt-quenching method to investigate the effect of the Se content on thermo-mechanical and optical properties of these glasses. While it was found that the glass transition temperature (T_g) decreases from 261 to 174 °C with increasing Se contents, crystallization temperature (T_c) peak only be observed in glasses with Se content of x = 45. It was evident from the measurements of structural and physical properties that changes of the glass network bring an apparent impact on the glass properties. Also, the substitution of Se for S in Ge–Ga–Sb glasses can significantly improve the thermal stability against crystallization and broaden the infrared transmission region.     

Effect of doping on cohesive and thermophysical properties of MgB2

The effects of doping Al and Mn on the cohesive and thermophysical properties of MgB₂ have been investigated using a Rigid Ion Model (RIM). The interatomic potential of this model includes contributions from the long-range Coulomb attraction and the short-range overlap repulsion and the van der Waals attraction. This model has been applied to describe the temperature dependence of the specific heat of MgB₂, Mg_1−xAl_xB₂ (x = 0.1–0.9) and Mg_1−xMn_xB₂ (x = 0.01–0.04) in the temperature range 5 K ⩽ T ⩽ 1000 K. The calculated results on cohesive energy (ϕ), Bulk modulus (B_T), molecular force constant (f), Restrahalen frequency (ν₀), Debye temperature (Θ_D) and Gruneisen parameter (γ) are also reported for these materials. Our results on Bulk modulus, Restrahalen frequency and Debye temperature are closer to the available experimental data. The comparison between our calculated and available experimental results on the specific heat at constant volume for MgB₂ and Mg_1−xAl_xB₂ (x = 0.1–0.4), particularly, at lower temperatures has shown almost an excellent agreement. The trend of variation of the specific heat with temperature is more or less similar in pure and doped MgB₂.