Optical properties of small silver clusters supported at MgO

We present structural and optical properties of silver clusters Ag_n (n=2, 4, 6, 8) at two model support sites of MgO, stoichiometric MgO(100) and F_S-center defect, based on density functional theory and embedded cluster model. Our results provide the mechanism responsible for the absorption and emission patterns due to the specific interaction between the excitations within the cluster and the support site which is strongly cluster size and structure dependent. We propose Ag₄ at stoichiometric site as well as Ag₂, Ag₄ and Ag₆ at F_S-center defects as good candidates for the emissive centers in the visible regime.     

O<Subscript>2</Subscript> photodesorption from a Ag<Subscript>8</Subscript>O<Stack><Subscript>2</Subscript><Superscript>-</Superscript></Stack> cluster

The decay path of an Ag₈(O₂)^- cluster photoexcited by a 3.1 eV photon is elucidated using time-resolved photoelectron spectroscopy. Photoabsorption results in the formation of an excited state giving rise to a peak in the photoelectron spectra with well-resolved vibrational finestructure. With a lifetime of about 100 fs this bound state decays into an anti-bonding state which dissociates into O₂ and Ag₈^- on a timescale of 10 ps. In the photoelectron spectra, this corresponds to a broad maximum shifting gradually towards higher binding energy while the O₂ and Ag₈^- separate. Finally, the spectrum of bare Ag₈^- appears. This process is unique to small clusters, because on metal surfaces excited state lifetimes are too short to allow for direct dissociation.     

Experimental evidence for molecular ultrafast dissociation in O<Subscript>2</Subscript> clusters

Resonant Auger spectra of O₂ clusters excited at the O1s edge are reported. After excitation to the repulsive 1s^-13σ^* state, the resulting resonant Auger spectrum displays features that remain constant in kinetic energy as the photon energy is detuned. The shift between known atomic fragment features and these features is consistent with that observed for atoms and clusters in singly charged states in direct photoemission. These findings are strong evidence for the existence of molecular ultrafast dissociation processes within the clusters or on their surface.     

First-principles study of structural evolution of medium-sized Si<Subscript>N</Subscript> clusters (41 N 50) within stuffed fullerene cages

The stuffed fullerene structures of medium-sized Si_N ( ) clusters have been systemically studied using the all-electron density functional theory with gradient correction. For each cluster size, fullerene cages with different topologies and filled by different number of atoms were constructed and optimized to find the lowest-energy structure. The core atoms filled in the fullerene cages tend to form cage-like structures that resemble structural character of bulk diamond fragments. The size-dependent physical properties such as binding energies, electronic gaps, and ionization potentials have been discussed. Si₄₅ exhibits relatively higher stability that can be associated with the low chemical reactivity observed by experiment.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Experimental and theoretical studies of interactions between Si<Subscript>7</Subscript> clusters

The possibility of using magic Si₇ clusters to form a cluster material was studied experimentally and theoretically. In experiments Si₇ clusters were deposited on carbon surfaces, and the electronic structure and chemical properties of the deposited clusters were measured using X-ray photoelectron spectroscopy (XPS). A non bulk-like electronic structure of Si₇ was found in the Si 2p core level spectra. Si₇ is suggested to form a more stable structure than the non-magic Si₈ cluster and Si atoms upon deposition on carbon surfaces. Theoretically it was possible to study the interaction between the clusters without the effect of a surface. Density functional theory (DFT) calculations of potential curves of two free Si₇ clusters approaching each other in various orientations hint at the formation of cluster materials rather than the fusion of clusters forming bulk-like structures.     

Structures and magnetic properties of AunTi2+ (n $\leqslant$ 7) clusters

Base on the density-functional theory, the structural and magnetic properties of Au_nTi₂ ⁺ ( ) clusters are investigated. The two titanium atoms form a dimer in the gold clusters. The second-order energy differences and HOMO-LUMO gap provide a clear explanation of the abundance peaks and odd-even staggering observed recently in photofragmentation experiments. The magnetism of Au_nTi₂ ⁺ cluster shows an odd-even effect when n increases from 1 to 4 and drops to zero at n=5 and 7. The local magnetic moment and charge partition of Ti 4s, 3d orbitals are discussed. The peculiar magnetic properties are related to the structures and the hybridization between the Au 5d, 6s states and Ti 3d, 4s states.     

Effect of Ta<Superscript>5+</Superscript> substitution for Mn on the ground state of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>

We report the charge state modification effects at the Mn site on the ground state properties of colossal magnetoresistive manganites. Ta⁵⁺ substitution results in an appreciable increase in the lattice parameters and unit cell volume due to increased Mn³⁺ concentration. The ferromagnetic-metallic ground state modifies to a cluster glass insulator for . The reduction in the transition temperatures with increasing x is ∼39 K/at.%. Besides the modification of majority carrier concentration due to increased Mn³⁺ concentration and enhanced local structural effects, the local electrostatic potential of the substituent seems to contribute to the unusually strong reduction of the transition temperatures of the compounds. Thermo magnetic irreversibility just below Curie temperature (T_c), non-saturation of magnetization, two distinct magnetic transitions in ac susceptibility in an appropriate static field: close to T_c and other at low temperature (the spin freezing temperature (T_g)) and non-stationary dynamics with a characteristic maximum in the magnetic viscosity close to T_g confirm a cluster glass state for . These results find additional support from a linear low temperature magnetic specific heat of x = 0.10 with a characteristic broad maximum close to T_g.     

Dissociation channels of silver bromide cluster Ag<Subscript>2</Subscript>Br,silver cluster Ag<Subscript>3</Subscript> and their ions studied by using alkali metal target

Various dissociation channels of silver bromide cluster ion Ag₂Br⁺ and silver cluster ion Ag₃ ⁺ were observed in high-energy collisionally-activated dissociation (CAD) using a Cs target. The fragment patterns of the high-energy CAD were compared with those of the metastable dissociation and low-energy CAD. The difference in the fragment patterns between the high-energy CAD and the other dissociation methods was explained in terms of the internal energy distributions. The dissociation mechanisms of neutral silver bromide cluster Ag₂Br and silver cluster Ag₃ were also investigated by charge inversion mass spectrometry using the Cs target. While the fragment ions AgBr^- and Ag₂ ^- were dominantly observed in the charge inversion spectrum of Ag₂Br⁺, the undissociated ion Ag₃ ^- was observed as a predominant peak in the case of Ag₃ ⁺. The dissociation behavior of Ag₂Br^* can be explained on the basis of the calculated thermochemical data. Contrary to this, the predominant existence of the undissociated Ag₃ ^- cannot be explained by the reported thermochemical data. The existence of undissociated Ag₃ ^- suggests that the dissociation barrier is higher than the internal energy of Ag₃ ^* (theoretical: 1.03 eV, experimental: 2.31 eV) estimated from the ionization potentials of Ag₃ and Cs.     

Tight-binding study of structural and electronic properties of silver clusters

Tight-binding model is developed to study the structural and electronic properties of silver clusters. The ground state structures of Ag clusters up to 21 atoms are optimized by molecular dynamics-based genetic algorithm. The results on small Ag_n clusters (n = 3-9) are comparable to ab initio calculations. The size dependence of electronic properties such as density of states, s-d band separation, HOMO-LUMO gap, and ionization potentials are discussed. Magic number behavior at Ag₂, Ag₈, Ag₁₄, Ag₁₈, Ag₂₀ is obtained, in agreement with the prediction of electronic ellipsoid shell model. We suggest that both the electronic and geometrical effect play significant role in the coinage metal clusters. Received 7 August 2000     

Photochromism in Cu-and Ag-doped Bi<Subscript>12</Subscript>SiO<Subscript>20</Subscript> crystals

The equilibrium and photoinduced absorption spectra of copper-and silver-doped Bi₁₂SiO₂₀ crystals are studied. It is demonstrated that the impurity absorption is due to Ag²⁺, Ag⁺, Cu³⁺, Cu²⁺, and Cu⁺ ions occupying almost octahedral Bi³ positions. A mechanism of photochromism is suggested, involving changes in the charge states of copper and silver impurity ions according to schemes Cu²⁺-e → Cu³⁺ and Ag⁺-e → Ag²⁺.     

Predicting experimental signatures for the oxidation of magnesia supported palladium clusters by density functional theory

We showed in a recent density functional study that small palladium cluster on a MgO surface with F-centers can be oxidized to epitaxial Pd_xO_y nano-oxides below room temperature [1]. Here, we employ density functional theory in order to explore different methods for an experimental verification of the Pd_xO_y formation. The electronic density of states (DOS) of bare, O₂-decorated and of oxidized palladium cluster was calculated. For many cluster sizes a clear difference in the DOS could be observed allowing for a detection of the oxidation with surface sensitive spectroscopic methods. In addition, adsorption sites and stretch frequencies of a single CO molecule on bare and oxidized Pd₄ clusters were calculated. While CO prefers hollow sites on Pd₄, top adsorption sites are found for Pd₄O₂. Markedly different CO stretch frequencies indicate a possible discrimination of bare clusters and oxides by Fourier transform infrared spectroscopy.     

Pressure-induced modifications of crystal and magnetic structure of oxygen deficient La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3-d</Subscript> manganites

The crystal and magnetic structures of the oxygen deficient manganites La_0.7Sr_0.3MnO_3-d (d = 0.15, 0.20) have been studied by means of powder neutron diffraction over the 0–5.2 GPa pressure and 10–290 K temperature ranges. La_0.7Sr_0.3MnO_2.85 exhibits a coexistence of rhombohedral and tetragonal (I4/mcm) crystal structures and below T_g ~ 50 K a spin glass state is formed. La_0.7Sr_0.3MnO_2.80 exhibits a tetragonal (I4/mcm) crystal structure. Below T_g ~ 50 K a phase separated magnetic state is formed, involving coexistence of C-type AFM domains with spin glass domains. In both compounds the crystal structure and magnetic states remain stable upon compression. The factors leading to the formation of different magnetic states in La_0.7Sr_0.3MnO_3-d (d = 0.15, 0.20) and their specific high pressure behavior, contrasting with that of the stoichiometric A_0.5Ba_0.5MnO₃ (A = Nd, Sm) compounds showing pressure-induced suppression of the spin glass state and the appearance of the FM state, are analysed.     

Self-assembly of Mo<Subscript> 6</Subscript>S<Subscript> 8</Subscript> clusters on the Au(111) surface

The preferred adsorption sites and the propensity for a self-organised growth of the molybdenum sulfide cluster Mo₆S₈ on the Au(111) surface are investigated by density-functional band-structure calculations with pseudopotentials and a plane wave basis set. The quasi-cubic cluster preferentially adsorbs via a face and remains structurally intact. It experiences a strong, mostly non-ionic attraction to the surface at several quasi-isoenergetic adsorption positions. A scan of the potential energy surface exhibits only small barriers between adjacent strong adsorption sites. Hence, the cluster may move in a potential well with degenerate local energy minima at room temperature. The analysis of the electronic structure reveals a negligible electron transfer and S-Au hybridised states, which indicate that the cluster-surface interaction is dominated by S-Au bonds, with minor contributions from the Mo atom in the surface vicinity. All results indicate that Mo₆S₈ clusters on the Au(111) surface can undergo a template-mediated self-assembly to an ordered inorganic monolayer, which is still redox active and may be employed as surface-active agent in the integration of noble metal and ionic or biological components within nano-devices. Therefore, a classical potential model was developed on the basis of the DFT data, which allows to study larger cluster assemblies on the Au(111).     

Laser and electrical current induced phase transformation of In<Subscript>2</Subscript>Se<Subscript>3</Subscript> semiconductor thin film on Si(111)

Phase transformation of thin film (∼30 nm)In₂Se₃/Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In₂Se₃ is of interest for non-volatile phase-change memory. Amorphous In _x Se _y was deposited at room temperature on Si(111) after pre-deposition of a crystalline In₂Se₃ buffer layer (0.64 nm). Upon resistive annealing to 380°C, the film was transformed into a γ-In₂Se₃ single crystal with its {0001} planes parallel to the Si(111) substrate and parallel to Si , as evidenced by scanning tunneling microscopy, low energy electron diffraction, and X-ray diffraction. Laser annealing with 20-ns pulses (0.1 millijoules/pulse, fluence≤50 mJ/cm²) re-amorphized the region exposed to the laser beam, as observed with photoemission electron microscopy (PEEM). The amorphous phase in PEEM appears dark, likely due to abundant defect levels inhibiting electron emission from the amorphous In _x Se _y film.     

High quality,high-<Emphasis Type="Italic">k</Emphasis> gate dielectric: amorphous LaAlO<Subscript>3</Subscript> thin films grown on Si(100) without Si interfacial layer

High-k dielectric amorphous LaAlO₃ thin films have been grown on n-type Si(100) substrates by laser molecular beam epitaxy. The interfacial characteristics of the LaAlO₃ films on Si were measured by high-resolution transmission electron micrography and X-ray photoemission spectroscopy. A sharp interface without a silica inter-layer between the LaAlO₃ film and Si substrate was observed. Atomic force microscopy measurements indicated that the root-mean-square surface roughness within a 2m×2m area of the LAO films was 0.12 nm. The flatband voltage and fixed charge density of the 8 nm thickness LaAlO₃ films were about 0.355 V and 1.8×10¹²/cm², respectively. The leakage currents of the LaAlO₃/Si(100) samples with different film thicknesses of 5, 8 and 12 nm were 0.45, 0.23 and 0.05 mA/cm², respectively, at a +1 V dc bias voltage. LaAlO₃ appears to be one of the most promising high dielectric constant materials for use in future ultra large scale integrated devices. PACS 77.55+f; 77.84.Bw; 73.40.Qv     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Magnetic order in thin films of the heavy fermion superconductor UNi<Subscript>2</Subscript>Al<Subscript>3</Subscript>

Resonant magnetic X-ray scattering was employed to investigate the magnetic state of epitaxial a^* oriented thin films of the heavy fermion superconductor UNi₂Al₃. The observed incommensurate propagation vector as well as the Ne l temperature correspond to those of bulk samples. The 1200 film shows magnetic order with a correlation length >800 ? parallel to the growth axis. Out of the three possible magnetic domains the one with the moment direction perpendicular to the film surface is not realized.     

Density functional theory study on the structural and electronic properties of Ag-adsorbed (MgO)<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> clusters

Equilibrium geometries, charge distributions, stabilities and electronic properties of the Ag-adsorbed (MgO) _n (n = 1–8) clusters have been investigated by density functional theory (DFT) with generalized gradient approximation (GGA) for exchange-correlation functional. The results show that hollow site is energetically preferred for n⩾4, and the incoming Ag atoms tend to cluster on the existing Ag cluster. The Mulliken populations indicate that the interaction between the Ag atom and Magnesia clusters is mainly induced by a weak atomic polarization. The adsorbed Ag atom only causes charge redistributions of the atoms near itself. The effect of the adsorbed Ag atom on the bonding natures and structural features of Magnesia clusters is minor. Furthermore, the investigations on the first energy difference, fragmentation energies and electron affinities show that the Ag(MgO)₄ and Ag(MgO)₆ are the most stable among studied clusters. Supported by the Startup Fund of High-level Personal for Shihezi University (Grant No. RCZX200747)     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.