Electron-electron interactions and the electrical resistivity of lithium at low temperatures

The electron-electron interactions in lithium metal have been examined keeping in view the recent developments. The contribution of the electron-electron Umklapp scattering processes in the electrical resistivity of lithium at low temperatures has been evaluated using a simplified spherical Fermi surface model with isotropic transition probability. Our values of the electrical resistivity so obtained compare fairly well with the experimental results for lithium.      

Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

Polycrystalline La_0.7Sr_0.3MnO₃ (LSMO) films were prepared on SiO₂/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction.     

On the theory of the low-temperature electrical resistivity of potassium

Expressing the residual resistivity ?₀ as a force-force correlation, a first-principles basis is afforded for the low temperature expansion of the electrical resistivity ? as

(I)$\text{? = ?}{}_0\text{[1 +}\text{λ1}\text{λ}\text{+ … ]}$

where λ = const T^-2 is the non-resistive mean free path arising from electron-electron scattering. λ¹ is found to reflect directly long-range correlations in the electronic motions via the off-diagonal behaviour of the local density of states at the Fermi energy.     

Evidence for the electron-electron scattering contribution to the electrical resistivity of aluminum

It is demonstrated that the recent low-temperature electrical resistivity data for aluminum provide experimental evidence for the presence of a T² contribution to the electrical resistivity due to electron-electron scattering.     

Kinetic effects in manganites La1 − x Ag y MnO3 (y ≤ x)

We have measured the resistivity, magnetoresistance, and thermopower of ceramic manganite samples La_{1 ? x} Ag _y MnO₃ (y ≤ x) doped with silver as functions of temperature (4.2–350 K) and magnetic field (up to 26 kOe). A metal-insulator phase transition is observed in all investigated samples at temperatures close to room temperature. The behavior of the resistivity and thermopower in the high-temperature paramagnetic region is interpreted using the concept of small radius polaron; the activation energy decreases with increasing doping level. The resistivity in the low-temperature ferromagnetic region is approximated by the expression ρ_FM(T) = ρ₀ + AT ² + BT ^4.5 presuming the existence of electron-electron and electron-magnon interactions. A resistivity minimum and a strong magnetoresistive effect are observed at low temperatures. The latter effect is associated with scattering of charge carriers at grain boundaries, which are antiferromagnetically ordered relative to one another. The temperature dependence of thermopower in the magnetically ordered phase is described in the framework of a model taking into account the drag of charge carriers by magnons.     

Anomalous resistivity and the origin of heavy mass in the two-band Hubbard model with one narrow band

We search for marginal Fermi-liquid behavior [1] in the two-band Hubbard model with one narrow band. We consider the limit of low electron densities in the bands and strong intraband and interband Hubbard interactions. We analyze the influence of electron polaron effect [2] and other mechanisms of mass enhancement (related to momentum dependence of the self-energies) on the effective mass and scattering times of light and heavy components in the clean case (electron-electron scattering and no impurities). We find the tendency towards phase separation (towards negative partial compressibility of heavy particles) in the 3D case for a large mismatch between the densities of heavy and light bands in the strong-coupling limit. We also observe that for low temperatures and equal densities, the homogeneous state resistivity R(T) ∼ T ₂ behaves in a Fermi-liquid fashion in both 3D and 2D cases. For temperatures higher than the effective bandwidth for heavy electrons T > W _* ^h , the coherent behavior of the heavy component is totally destroyed. The heavy particles move diffusively in the surrounding of light particles. At the same time, the light particles scatter on the heavy ones as if on immobile (static) impurities. In this regime, the heavy component is marginal, while the light one is not. The resistivity saturates for T > W _* ^h in the 3D case. In 2D, the resistivity has a maximum and a localization tail due to weak-localization corrections of the Altshuler-Aronov type [3]. Such behavior of resistivity could be relevant for some uranium-based heavy-fermion compounds like UNi₂Al₃ in 3D and for some other mixed-valence compounds possibly including layered manganites in 2D. We also briefly consider the superconductive (SC) instability in the model. The leading instability is towards the p-wave pairing and is governed by the enhanced Kohn-Luttinger [4] mechanism of SC at low electron density. The critical temperature corresponds to the pairing of heavy electrons via polarization of the light ones in 2D.     

Low temperature resistivity minimum and its correlation with magnetoresistance in La0.67Ba0.33MnO3 nanomanganites

A systematic investigation of structural, magnetic and electrical properties of nanocrystalline La_0.67Ba_0.33MnO₃ materials, prepared by citrate gel method has been undertaken. The temperature-dependant low-temperature resistivity in ferromagnetic metallic (∼50 K) phase shows upturn behavior and is suppressed with applied magnetic field. The experimental data (<75 K) can be best fitted in the frame work of Kondo-like spin-dependant scattering, electron-electron and electron-phonon interactions. It has been found that upturn behavior may be attributed to weak spin disorder scattering including both spin polarization and grain boundary tunneling effects, which are the characteristic features of extrinsic magnetoresistance behavior, generally found in nanocrystalline manganites. The variation of electrical resistivity with temperature in the high temperature ferromagnetic metallic part of electrical resistivity (75K<T<T_P) has been fitted with grain/domain boundary, electron-electron and magnon scattering mechanisms, while the insulating region (T>T_P) of resistivity data has been explained based on adiabatic small polaron hopping mechanism.     

Electron interactions and the electrical resistivity of alkali metals at low temperatures

The contribution of the electron-electron umklapp scattering processes to the electrical resistivity of sodium, potassium, rubidium and cesium at low temperatures has been evaluated using a simplified spherical Fermi-surface model with an isotropic transition probability. Our values of the electrical resistivity so obtained compare fairly well with the recent experimental values for sodium, potassium and rubidium. Our theoretical results have also been compared with the other available data in the literature due to Lawrence and Wilkins and MacDonald and Geldart.     

替代式合金系统的电阻率

本文将文献[1]的无序晶态合金电阻率理论推广到包含长程有序的系统,从而建立了适用于晶态金属,无序及有序替代式合金的Ziman型电阻率理论。根据这个理论我们详细讨论了这类系统电阻率的温度依赖性。文中着重指出:合金系统结构因子的超结构峰对电阻率有重要贡献。这个贡献在低温下是一个T²项,它比电子-电子散射引起的T²项大得多,因而合金系统电阻率在T<<Θ(Θ是德拜温度)时有ρ≈ρ₀+ρ_a(T/Θ)²+ρ_i(T/Θ)⁵的形式。据此,许多A-15化合物正常态电阻率在低温下的反常行为很容易解释。作为例子,我们将低温电阻率的理论表达式与V₃Si的测量值作了比较,符合得很好。     

Structural and electrical transport properties of Nb-doped TiO2 films deposited on LaAlO3 by rf sputtering

We have investigated the structural and electrical transport properties of Nb-doped TiO₂ films deposited on (1 0 0) LaAlO₃ substrates by rf magnetron sputtering at temperatures ranging from 873 K to 1073 K. Films deposited below 998 K are anatase, and mixed phases between anatase and rutile exist in the film grown at higher temperatures. We find that films deposited at low temperatures exhibit semiconductor behavior, while metallic conductivity is observed in the most conducting film deposited at 998 K. For this sample, compared to electron-phonon scattering mechanism, electron-phonon-impurity interference effect plays an important role in its electron transport process. Moreover, the temperature coefficient of the resistivity for the film deposited at 1073 K is negative from 2 K to 300 K. The temperature dependence of resistivity for the film is described by ∼exp(b/T)^1/2 at temperatures from 80 K down to 30 K, and by the fluctuation induced tunneling model from 80 K to 300 K.     

Low temperature electrical conductivity and magnetoconductivity of Fe39Ni39Mo4Si6B12 and Co58Ni10Fe5Si11B16 metallic glass alloys

A detailed study on the weak localization phenomenon vis-a-vis electron-electron interaction effects in magnetic metallic glasses has been carried out. We measured the electrical conductivity and magnetoconductivity within the temperature range 1.8≤T≤300K. A maximum on the conductivity versus temperature curve exists atT=T _m. The conductivity was observed to follow aT ^1/2 law forT<T _m andT ² law forT>T _m. Magnetoconductivity data of these alloys indicate the prominence of electron-electron interaction at low temperatures. The authors have determined the inelastic scattering field and spin-orbit scattering field from the magnetoconductivity data. The inelastic scattering field obeys aT ^p law (p=2) at low temperatures.     

Low temperature resistivity of rare-earth hexaborides

Low temperature resistivity measurements of rare-earth hexaborides have been done down to 2 K. We observe a T⁴ or T³ temperature dependence of resistivity below the Néel temperature, which is associated with electron-spin wave scattering. At the lowest temperatures the resistivity varies as T². This T² dependence is thought to be due to Baber type electron-electron scattering.     

Negative resistivity anomaly of unstable 4f impurities in metals

The minimum of the resistivity of dilute alloys with unstable Ce and Pr impurities is usually attributed to an abnormal increase of the spin scattering cross section of the inner 4f electron at low temperatures (4f Kondo effect). By comparison with the resistivity increments of stable rare earth impurities, we show that nearT=0 the anomalous increment is in fact consistent with simple potential scattering from the outer 5d6s valence electrons of fractional valent impurities. The observed decrease of the increment at elevated temperatures is too large to be due to 4f spin scattering in the unitarity limit or to a valence change. This decrease therefore implies some kind of shunting of the impurity potential scattering by an unknown mechanism connected with the valence instability of the impurity.     

(TMTSF) 2F2PO2: An unusual member of the (TMTSF) 2X family of organic metals

Resistivity measurements were carried out as a function of temperature and pressure in (TMTSF) ₂F₂PO₂. A strong metal-insulator transition is observed at ～137K which is only incompletely suppressed by high pressures. The nature of the resistivity curves obtained at high pressure suggest the onset of a Fermi surface instability; however, the metallic-like transport at lower temperatures suggests that the energy gap covers only part of the Fermi surface. The surprising increase in ? (T) at temperatures below 20K (under pressure) may result from disorder induced localization arising from the strong electronic scattering from the randomly oriented dipole moments.     

无序Cu33Y67低温电阻和磁阻中的相互作用和弱定域化

文中报道非晶Cu₃₃Y₆₇低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T^1/2形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu₃₃Y₆₇的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在 关键词：     

Electrical behavior of some silver-doped lanthanum-based CMR materials

With a view to understand the structural, magnetic and electrical properties of La_1−xAg_xMnO₃ (x=0.05-0.3), a series of samples were prepared by polyvinyl alcohol (PVA) gel route. It has been found that both the metal-insulator and ferro- to paramagnetic transition temperatures after increasing up to the composition x=0.20, are found to remain constant thereafter. The electrical resistivity vs. temperature plot of the sample x=0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x=0.20 exhibits two peaks, and the observed behavior is explained on the basis of the phase separation model. The low-temperature (T<T_P), electrical resistivity data were analyzed by a theoretical model, ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects, electron-electron and two-magnon scattering processes. The low-temperature resistivity data (T<50 K) were fitted to an equation, which is based on the combined effect of weak localization, electron-electron and electron-phonon scattering.     

Electrical conduction of a quasi-one dimensional Nb3S4 single crystal

With respect to single crystals of Nb₃S₄ the electrical resistivity from 2.8 K to 300 K and the magnetoresistance at 4.2 K were measured. The resistivity is represented as a sum of a temperature independent and an intrinsic temperature dependent component. The temperature dependence of the intrinsic resistivity subjects to T₃ form between 7 and 50 K above which it becomes weaker than T₃ approaching a T linear from. This behaviour is discussed in terms of the electron-electron Umklapp scattering. The ratio of the resistivities perpendicular and parallel to the c-axis takes about 15 between room temperature and 50 K. The transverse magnetoresistance is proportional to the magnetic field. The longitudinal magnetoresistance is too small to be measured.     

Thermoelectric properties of the interacting two dimensional electron gas in the diffusion regime?

We demonstrate that kinetic coefficients related to thermoelectric properties of the two dimensional electron gas in the diffusive regime are strongly influenced by electron-electron interaction. As an example we consider the thermoelectric coefficients of the diluted two-dimensional electron gas in Si(100) MOSFET’s in the presence of charged-impurity scattering. We find that the screening anomaly at q = 2k _F, also responsible for Friedel oscillations, leads at low electron densities to a large change in the thermoelectric coefficient for the thermopower.     

Anomalous electrical conduction in disordered and non-crystalline metallic conductors

Many disordered and non-crystalline metallic conductors are characterized by both a negative temperature coefficient (α = ?^-1 d?/dT) of resistivity ? over a wide range of temperatures T and a gradual leveling-off of ? at low temperatures. Experimental results will be presented to show that ? varies as -?n T (for T ? the Debye temperature) in contrast to the prediction of existing theories. This anomalous electron transport can be understood in terms of an attractive interaction between conduction electrons and localized excitations arising from a structural indeterminacy in the atomic arrangement. The possibility of using this scattering mechanism to explain the unusual deviation from linear T dependence of resistivity (the bulge effect) in many structurally unstable superconductors such as A-15 Nb₃Ge, V₃Si, bcc Nb and alloys containing the ω-phase is also discussed.