Species formed at cuprite fracture surfaces; observation of O 1s surface core level shift

Surfaces of mineral cuprite prepared by fracture under UHV have been characterised by synchrotron XPS and near-edge X-ray absorption spectroscopy before and after exposure to ambient air. Before exposure of the cuprite, the Cu 2p photoelectron and Cu L_2,3-edge absorption spectra were consistent with Cu^I with very little d⁹ character. Surface-enhanced O 1s spectra from the unexposed mineral revealed a surface species, with binding energy 0.95 ± 0.05 eV below the principal cuprous oxide peak, assigned to under-coordinated oxygen. A second surface species, with binding energy about 1 eV higher than the principal peak, was assigned to either hydroxyl derived from chemisorbed water vapour or surface oxygen dimers produced by restructuring of the cuprite fracture surface. The width of the principal O 1s peak was 0.66 ± 0.02 eV. The observed Cu L₃- and O K-edge absorption spectra were in good agreement with those simulated for the cuprite structure. After exposure of the fracture surface to ambient air, the low binding energy O 1s surface species was barely discernible, the original high binding energy O 1s surface species remained of comparable intensity, new intensity appeared at an even higher (∼1.9 eV) binding energy, and the Cu L_2,3-edge spectrum indicated the presence of Cu^II, consistent with the formation of a thin surface layer of Cu(OH)₂.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

Photoinduced effect in Ga-Ge-S based thin films

Glassy films of Ga₁₀Ge₂₅S₆₅ with 4 μm thickness were deposited on quartz substrates by electron beam evaporation. Photoexpansion (PE) (photoinduced increase in volume) and photobleaching (PB) (blue shift of the bandgap) effects have been examined. The exposed areas have been analyzed using perfilometer and an expansion of 1.7 μm (ΔV/V ≈ 30%) is observed for composition Ga₁₀Ge₂₅S₆₅ exposed during 180 min and 3 mW/cm² power density. The optical absorption edge measured for the film Ge₂₅Ga₁₀S₆₅ above and below the bandgap show that the blue shift of the gap by below bandgap photon illumination is considerable higher (ΔE_g = 440 meV) than ΔE_g induced by above bandgap illumination (ΔE_g = 190 meV). The distribution of the refraction index profile showed a negative change of the refraction index in the irradiated samples (Δn = −0.6). The morphology was examined using a scanning electron microscopy (SEM). The chemical compositions measured using an energy dispersive analyzer (EDX) indicate an increase of the oxygen atoms into the irradiated area. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings using the photoinduced effects that occur in them. Diffraction efficiency up to 25% was achieved for the recorded gratings and atomic force microscopy images are presented.     

FePt L10 ordering and grain growth using millisecond pulse laser processing

The structural and magnetic properties of ∼12 nm thick FePt thin films grown on Si substrates annealed using a 1064 nm wavelength laser with a 10 ms pulse have been examined. The A1 to L1₀ ordering phase transformation was confirmed by electron and X-ray diffraction. An order parameter near 50% and a maximum coercivity of 12 kOe were obtained with laser energy densities of 25-32 J/cm². Grain growth, quantified by dark field transmission electron microscopy, occurred during chemical ordering at the laser pulse widths studied.     

L10 FePt thin films with [0 0 1] crystalline growth fabricated by SiO2 addition—rapid thermal annealing and dot patterning of the films

FePt films that have a high degree of order S in their L1₀ structure (S>0.90) and well-defined [0 0 1] crystalline growth perpendicular to the film plane were fabricated on thermally oxidized Si substrates by the addition of an oxide and successive rapid thermal annealing (RTA). The mechanism of L1₀ ordering and [0 0 1] crystalline growth perpendicular to the film plane arising through the oxide addition and RTA process is also discussed. The L1₀ ordering (S>0.90) and the [0 0 1] crystalline growth were achieved by (1) lowering the activation energy due to in-plane tensile stress and the initiation of L1₀ ordering at a low temperature, (2) [0 0 1] crystalline growth through in-plane tensile stress, and (3) enhancement of atomic diffusion via the addition of an oxide and the resultant lowering of the ordering temperature. Effect (1) was observed in the case of SiO₂ addition, effect (2) was generally observed in the case of oxide addition and the RTA process, and effect (3) was prominent in the case of ZnO addition. With the addition of ZnO, the L1₀ ordering started at below 400 °C and was completed at 500 °C. Finally, dot patterns were successfully fabricated down to a diameter of 15 nm using electron beam lithography, and the magnetic state of the dot pattern was observed by magnetic force microscopy.     

Polarization-dependent gain and saturation energy density in a TE N2-laser amplifier

The polarization-dependent gain, g₀, and saturation energy density, E_s, in a TE N₂-laser amplifier were measured, using an oscillator-amplifier laser system for different amplifier electrode gap separations, d_AMP, of 7, 9 and 4 mm and gas pressure of p = 77, 60, and 165 Torr, respectively. It was realized that for the amplifier with the gap separation of 7 and 9 mm, where the pd_AMP-value has its optimum-value of 54 Torr cm, the gain-coefficient for the input beam with the polarization parallel to the discharge electrodes (P-polarized beam) is slightly higher than the case when the beam polarization is perpendicular to the discharge electrodes (S-polarized beam). In this case, the depolarization ratio for d_AMP = 7 mm is the range of ∼0.998 to ∼0.962 as the input voltage increases from 12 to 15.5 kV, having a minimum of 0.937 around 14 kV. For the E_s-parameter, the reversed order is true. Also, it was found that the saturation energy densities for three states of polarization are linearly related to the output energy densities, having different slopes of 0.11, 0.14, and 0.17 for R (randomly), P- and S-polarization, respectively. The present measurement supports qualitatively the prediction of polarization-inhomogeneity model for the stimulated emission cross-section, showing that randomly oriented dipoles exhibit slightly larger gain on the direction of the electric field.     

Observation of nonstationary effects in saturation spectroscopy

We have studied the nonstationary effects in saturated absorption spectroscopy of the ⁸⁷Rb D₂ line. Varying the size of the σ⁺ polarized pump laser beam, we observed saturated absorption spectra for the σ^± polarized probe beam. For equal polarizations of the pump and probe beams, we found that the resonance signal for the F_g = 1 → F_e = 2 line, and the crossover lines between F_g = 1 → F_e = 2 and F_g = 1 → F_e = 1 (and 0) lines increased to a greater extent than the others. This observation can be understood from the calculated time evolution of the populations of the ground-state sublevels by means of a rate equation model. We also compared experimental data for other conditions with the calculated results. We found good agreement between the calculated results and the data.     

Investigation on spectral features of tungsten ions in PbO-Bi2O3-As2O3 glass matrix

Lead bismuth arsenate glasses mixed with different concentrations of WO₃ (ranging from 0 to 6.0 mol%) were synthesized. Differential thermal analysis (DTA), optical absorption, ESR and IR spectral studies have been carried out. The results of DTA have indicated that there is a gradual decrease in the resistance of the glass against devitrification with increase in the concentration of WO₃ upto 4.0 mol%.The optical absorption spectra of these glasses exhibited a relatively broad band peaking at about 880 nm identified due to d_xy→d_x²_−y² transition of W⁵⁺ ions; this band is observed to be more intense in the spectrum of glass containing 4.0 mol% of WO₃. Further, two prominent kinks attributed to ³P₀→¹S₀, ¹D₂ transitions of Bi³⁺ ions have also been located in the absorption spectra. The ESR spectra of these glasses recorded at room temperature exhibited an asymmetric signal at g_⊥∼1.71 and g_ll∼1.61. The intensity of the signal is observed to be maximal for the spectrum of the glass W₄. The quantitative analysis of optical absorption and ESR spectral studies have indicated that there is a maximum reduction of tungsten ions from W⁶⁺ state to W⁵⁺ state in the glass containing 4.0 mol% of WO₃. The IR spectral studies have indicated that there is a increasing degree of disorder in the glass network with increase in the concentration of WO₃ upto 4.0 mol%.     

Radiative quantum efficiency of CdSe/ZnS core-shell colloidal solutions: Size-dependence

Thermo-optical parameters of CdSe/ZnS core-shell nanoparticles suspended in toluene were measured using a thermal lens (TL) technique. TL transient measurements were performed using the mode-mismatched dual-beam (excitation and probe) configuration. A He-Ne laser at λ_p = 632.8 nm was used as the probe beam and an Ar⁺ laser (at λ_e = 514.5 nm) was used as the excitation beam for studies as a function of both core size and concentration of CdSe/ZnS nanocrystals. The fraction thermal load (φ) and radiative quantum efficiencies (η) of the CdSe/ZnS were determined. Dependence on core size (∼2-5 nm) and concentration (∼0.01-0.62 mg/ml) was observed for both φ and η parameters.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Adsorption dynamics of CO2 on Cu(1 1 0): A molecular beam study

Molecular beam scattering measurements have been conducted to examine the adsorption dynamics of CO₂ on Cu(1 1 0). The initial adsorption probability, S₀, decreases exponentially from 0.43 ± 0.03 to a value close to the detection limit (∼0.03) within the impact energy range of E_i = (0.12-1.30) eV. S₀ is independent of the adsorption temperature, T_s, and the impact angle, α_i, i.e., the adsorption is non-activated and total energy scaling is obeyed. The coverage, Θ, dependent adsorption probability, S(Θ), agrees with precursor-assisted adsorption dynamics (Kisliuk type) above T_s ∼ 91 K. However, below that temperature adsorbate-assisted adsorption (S increases with Θ) has been observed. That effect is most distinct at large E_i and low T_s. The S(Θ) data have been modeled by Monte Carlo simulations. No indications of CO₂ dissociation were obtained from Auger Electron Spectroscopy or the molecular beam scattering data.     

Oxidation state characterization in Cr oxides by means of Cr-Kβ emission spectroscopy

High-resolution Kβ spectra of Cr oxide were measured using a non-conventional spectrometer. Theoretical spectra were obtained using the DV-Xα method in order to interpret the Kβ spectrum structures. Kβ spectrum structures were analyzed and spectral parameters show a great sensitivity to the oxidation state and to the Cr-O distance. High-purity samples of CrO₂ were obtained by means of thermal treatment at 513 °C under oxygen pressure of 200 bar. X-ray diffraction patterns show a typical rutile structure, without spurious phases. The CrO₂ data allowed to confirm the linear dependency of the Kβ_1,3 and Kβ_2,5 energy positions with the oxidation state. The energy of the Kβ_2,5 line relative to the Kβ_1,3 line seems to be a suitable parameter for characterization of the oxidation state. The relative Kβ″ transition probability per Cr-O falls exponentially with Cr-O increasing distance. This behaviour was not found in the literature for Cr oxides.     

Electron-assisted chemical etching of oxidized chromium

Electron-assisted chemical etching of oxidized chromium, CrO_x, has been studied by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). Two model substrates were used—10 nm CrO_x deposited on Si(1 0 0) that was covered with either native oxide or a 20 nm Au/Pd alloy film. Using chlorine and/or oxygen as etching gases, the experiments were conducted in a customized high vacuum system, equipped with a high density electron source and a low pressure reaction cell. On both substrates, electron-assisted chemical etching of CiO_x was detected by SEM, EDS and AFM. Making the method questionable for etching applications, there is substantial substrate damage associated with the etching. The SEM images indicate strongly inhomogeneous material removal, apparently initiated and propagated from specific but unidentified sites. In the experiments involving the Au/Pd film, there was phase separation of Au and Pd, and dewetting to form metallic islands. AFM data show that the etched holes were as deep as 200 nm, confirming relatively rapid etching of the Si substrate after the top layer of Cr oxide was removed.     

Observation of the K2 4Δg state by cw perturbation-facilitated optical-optical double resonance spectroscopy

This paper reports for the first time both, an experimental observation and theoretical calculations of the K₂ 4³Δ_g state. For the experiment we used cw perturbation-facilitated optical-optical double resonance (PFOODR) spectroscopy. A single mode Ti-sapphire laser and a dye laser served as the pump and probe lasers, respectively. A total of 55 PFOODR signals have been assigned to the 4³Δ_g ← b³Π_u transitions. Absolute vibrational numbering was determined by using quantum defect analysis combined with comparing observed intensities with calculated Franck-Condon factors (FCF). For the former we used known parameters from the 2³Δ_g state since the 2³Δ_g and the 4³Δ_g states belong to the same Rydberg series. We report here our experimental and calculated spectroscopic constants, the corresponding RKR potential energy curve, the Franck-Condon table for the 4³Δ_g ↔ b³ Π_u system, as well as a comparison with the theoretical potential energy curve. The T_e value is found to be 28408.938(52) cm⁻¹.     

Synthesis and nonlinear optical characterization of SnO2 quantum dots

The present paper demonstrates the preparation and characterization of SnO₂ semiconductor quantum dots. Extremely small ∼1.1 and ∼1.4 nm SnO₂ samples were prepared by microwave assisted technique with a frequency of 2450 MHz. Based on XRD analysis, the phase, crystal structure and purity of the SnO₂ samples are determined. UV-vis measurements showed that, for the both size of SnO₂ samples, excitonic peaks are obtained at ∼238 and ∼245 nm corresponding to ∼1.1 nm (sample 1) and ∼1.4 nm (sample 2) sizes, respectively. STM analysis showed that, the quantum dots are spherical shaped and highly monodispersed. At first, the linear absorption coefficients for two different sizes of SnO₂ quantum dots were measured by employing a CW He-Ne laser at 632.8 nm and were obtained about 1.385 and 4.175 cm⁻¹, respectively. Furthermore, the nonlinear refractive index, n₂, and nonlinear absorption coefficient, β, were measured using close and open aperture Z-scan respectively using the same laser. As quantum dots have strong absorption coefficient to obtain purely effective n₂, we divided the closed aperture transmittance by the corresponding open aperture in the same incident beam intensity. The nonlinear refraction indices of these quantum dots were measured in order of 10⁻⁷ (cm²/W) with negative sign and the nonlinear absorption coefficients were obtained for both in order of 10⁻³ (cm/W) with positive sign.     

Electron energy loss spectra from polycrystalline Cr and Cr2O3 before and after surface reduction by Ar bombardment

Electron energy loss spectra (ELS) have been obtained from polycrystalline Cr and Cr₂O₃ before and after surface reduction by 2 keV Ar⁺ bombardment. The primary electron energy used in the ELS measurements was systematically varied from 100 to 1150 eV in order to distinguish surface versus bulk loss processes. Two predominant loss features in the ELS spectra obtained from Cr metal at 9.0 and 23.0 eV are assigned to the surface and bulk plasmon excitations, respectively, and a number of other features arising from single electron transitions from both the bulk and surface Cr 3d bands to higher-lying states in the conduction band are also present. The ELS spectra obtained from Cr₂O₃ exhibit features that originate from both interband transitions and charge-transfer transitions between the Cr and O ions as well as the bulk plasmon at 24.4 eV. The ELS feature at 4.0 eV arises from a charge-transfer transition between the oxygen and chromium ions in the two surface layers beneath the chemisorbed oxygen layer, and the ELS feature at 9.8 eV arises from a similar transition involving the chemisorbed oxygen atoms. The intensity of the ELS peak at 9.8 eV decreases after Ar⁺ sputtering due to the removal of chemisorbed oxygen atoms. Sputtering also increases the number of Cr²⁺ states on the surface, which in turn increases the intensity of the 4.0 eV feature. Furthermore, the ELS spectra obtained from the sputtered Cr₂O₃ surface exhibit features characteristic of both Cr⁰ and Cr₂O₃, indicating that Ar⁺ sputtering reduces Cr₂O₃. The fact that neither the surface- nor the bulk-plasmon features of Cr⁰ can be observed in the ELS spectra obtained from sputtered Cr₂O₃ while the loss features due to Cr⁰ interband transitions are clearly present indicates that Cr⁰ atoms form small clusters lacking a bulk metallic nature during Ar⁺ bombardment of Cr₂O₃.     

Optical properties of Mn-activated Na2SnF6 and Cs2SnF6 red phosphors

Alkaline hexafluorostantanate red phosphors Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺ are synthesized by chemical reaction in HF/NaMnO₄ (CsMnO₄)/H₂O₂/H₂O mixed solutions immersed with tin metal. X-ray diffraction patterns suggest that the synthesized phosphors have a tetragonal symmetry with the space group D_4h¹⁴ (Na₂SnF₆:Mn⁴⁺) and a trigonal symmetry with the space group D_3d³ (Cs₂SnF₆:Mn⁴⁺). Photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and the Raman scattering techniques are used to investigate the optical properties of the phosphors. The Franck-Condon analysis of the PLE data yields the Mn⁴⁺-related optical transitions to occur at ∼2.39 and ∼2.38 eV (⁴A_2g→⁴T_2g) and at ∼2.83 and ∼2.76 eV (⁴A_2g→⁴T_1g) for Na₂SnF₆:Mn⁴⁺ and Cs₂SnF₆:Mn⁴⁺, respectively. The crystal field parameters (Dq) of the Mn⁴⁺ ions in the Na₂SnF₆ and Cs₂SnF₆ hosts are determined to be ∼1930 and ∼1920 cm⁻¹, respectively. Temperature-dependent PL measurements are performed from 20 to 440 K in steps of 10 K, and the obtained results are interpreted by taking into account the Bose-Einstein occupation factor. Comprehensive discussion is given on the phosphorescent properties of a family of Mn⁴⁺-activated alkaline hexafluoride salts.     

Exploration of fractal nature of WO3 nanowire aggregates

The morphology of WO₃ aggregates formed by irregular nanoparticles (D∼40 nm) and nanowires of different aspect ratios (2, 4, 6, and 10 μm nominal lengths) dispersed in commonly used polar solvents without dispersant agents is investigated using a small-angle light scattering technique and by means of fractal theory. Nanoparticles form compact spherical aggregates (D_f∼2.6), whereas 2 μm nanowires with low aspect ratio (L/D∼10) follow a slow cluster-cluster aggregation mechanism with no discernable change in fractal dimension (D_f=2.1) monitored in an extended period of 6 months, despite a notable growth in size (R_g=2.3-3.1 μm). For higher aspect ratio nanowires, scattered intensity profiles, which migrate towards the Porod regime, qualitatively obey the Lorenz-Mie theory predictions. The 10 μm nanowires with very high aspect ratio (L/D∼250) are observed to form stable dispersions in a time span of 6 days. Analytical methods based on spherical primary particle formulations predict D_f=1.9, 1.7, and 1.4 for 4, 6, and 10 μm nanowires, respectively.     

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO₂ films and the effects of structural and native defects of the ZrO₂ films on the electrical and dielectric properties were investigated. For preparing ZrO₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO₂(∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.     

Electrochemically deposited photoactive CdIn2Se4 thin films: Structural and optical studies

Electrochemical synthesis of photoactive cadmium-indium-selenide (CdIn₂Se₄) thin films at ambient temperature was reported. The nanocrystalline nature and 1:2:4 elemental chemical stoichiometric ratio for Cd, In and Se were obtained from the X-ray diffraction and energy dispersive X-ray analysis, respectively. Irregular shaped islands of about 400-500 nm in sizes composed of large number of small (∼30-40 nm) spherical grains were confirmed from the atomic force microscopy and the scanning electron microscopy images. The photoelectrochemical measurement of CdIn₂Se₄ film electrode in presence of 1 M polysulphide electrolyte revealed 0.42% photoelectrochemical device conversion efficiency, under the light illumination intensity of 80 mW/cm².