Effect of annealing conditions on structural and magnetic properties of laser ablated copper ferrite thin films

The effect of annealing conditions on structural and magnetic properties of copper ferrite thin films on (100) Si substrates was examined in detail. After deposition, the ferrite thin films were post-annealed in vacuum and in oxygen atmosphere for several hours. It is found that the crystal structure of CuFe₂O₄ thin films changed drastically depending on different heating process. A maximum magnetization was achieved in the film that was vacuum annealed and it decreased remarkably after oxygen annealing.     

The role of copper ions on the structural and magnetic characteristics of MgZn ferrite nanoparticles and thin films

In this study Cu_xMg_0.5−xZn_0.5Fe₂O₄ (x=0-0.5) nanoparticles and thin films were prepared by sol-gel processing. The morphologies of nanoparticles were observed by transmission electron microscope (TEM). The Mössbauer spectroscopy (MS) was employed to determine the site preference of the constitutive elements. Magnetic dynamics of the nanoparticles was studied by the measurement of AC magnetic susceptibility versus temperature at different frequencies. The phenomenological Néel-Brown and Vogel-Fulcher models were employed to distinguish between interacting or non-interacting system. Results exhibited that there is strong interaction between fine particles. X-ray diffraction (XRD) patterns of the thin films indicate the formation of single-phase cubic spinel structure. Atomic force microscope (AFM) was employed to evaluate the surface morphologies of the prepared thin films. Vibrating sample magnetometer (VSM) was employed to probe magnetic properties of samples. It was found that with an increase in the amount of copper, the saturation of magnetization and initial permeability increase.     

The critical properties of magnetic films

Within the framework of the transverse Ising model and by using the effective field theory with a probability distribution technique that accounts for the self spin correlations, we have studied the critical properties of an L-layer film of simple cubic symmetry in which the exchanges strength are assumed to be different from the bulk values in N_S surface layers. We derive and illustrate the expressions for the phase diagrams, order parameter profiles and susceptibility. In such films, the critical temperature can shift to either lower or higher temperature compared with the corresponding bulk value. We calculate also some magnetic properties of the film, such as the layer magnetizations, their averages and their profiles and the longitudinal susceptibility of the film. The film longitudinal susceptibility still diverges at the film critical temperature as does the bulk longitudinal susceptibility.     

Correlation between site preference and magnetic properties of substituted strontium ferrite thin films

SrFe_12−x(Sn_0.5Zn_0.5)_xO₁₉ thin films with x=0−5 were synthesized by a sol-gel method on thermally oxidized silicon wafer (Si/SiO₂). The site preference and magnetic properties of Zn-Sn substituted strontium ferrite thin films were studied using ⁵⁷Fe Mössbauer spectroscopy and magnetic measurements. Mössbauer spectra displayed that the Zn-Sn ions preferentially occupy the 2b and 4f₂ sites. The preference for these sites is responsible for the anomalous increase in the magnetization at high Zn-Sn substitutions. X-ray diffraction (XRD) patterns and field emission scanning electron microscope (FE-SEM) micrographs demonstrated that single phase c-axis hexagonal ferrite films with rather narrow grain size distribution were obtained. Vibrating sample magnetometer (VSM) was employed to probe magnetic properties of samples. The maximum saturation of magnetization and coercivity at perpendicular direction were 265 emu/g and 6.3 kOe, respectively. It was found that the complex susceptibility has linear variation with static magnetic field.     

Morphology, magnetic, magnetoresistance and optical properties of Co-Ni-Mo alloys thin films

We present in this paper several results concerning the preparation by means of electrolysis and characterization of Co-Ni-Mo thin films. Co-Ni-Mo thin films with different molybdenum content in the range 0-25 at% Mo were prepared from a complex solution containing ions of Co, Ni and Mo, using galvanostatic control, on aluminum substrates. The effects of applied current density on the morphology, magnetic, magnetoresistance, and optical properties of the electrodeposited Co-Ni-Mo films were investigated. The applied current density significantly influenced the film composition and their magnetic properties. The increase of molybdenum content in Co-Ni films (up to 25 at% Mo) enhances the resistivity, but it reduces the magnetoresistance effect. We report the first observation of magnetoresistance as high as 8% in Co-Ni-Mo thin films.     

Magnetic properties of substituted strontium ferrite nanoparticles and thin films

SrFe_12−x(Zr_0.5Mg_0.5)_xO₁₉ nanoparticles and thin films with x=0-2.5 were synthesized by a sol-gel method on thermally oxidized silicon wafer (Si/SiO₂). Structural and magnetic characteristics of synthesized samples were studied employing x-rays diffraction (XRD), transmission electron microscopy (TEM), magnetic susceptometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and vibrating sample magnetometer (VSM). TEM micrographs display that the narrow size distribution of ferrite nanoparticles with average particle size of 50 nm were fabricated. Fitting obtained data of effective magnetic susceptibility by Vogel-Fulcher law confirms the existence of strong magnetic interaction among fine particles. XRD patterns and FE-SEM micrographs demonstrated that single phase c-axis hexagonal ferrite films with rather narrow grain size distribution were obtained. AFM micrographs exhibited that the surface roughness increases with an increase in Zr-Mg content. It was found from the VSM graphs that with an increase in substitution contents the coercivity decreases, while the saturation of magnetization increases. The Henkle plots confirms the existence of exchange coupling among nano-grain in ferrite thin films.     

Magnetoresistive measurement of switching behavior in nano-structured magnetic dot arrays

In the present study, geometrical and thermal effects in a mesoscopic magnetization reversal process have been studied on a novel nano-structure of magnetic relief dot with magnetoresistive measurements. Only the top layer of a substrate/CoPt(10 nm)/Cu(10 nm)/NiFe(6, 12 nm) film was structured into rectangular dots with various lengths (L) and widths (W) down to 0.2 μm. Coercive fields of NiFe relief dots (W=0.2 μm) systematically decrease with the decrease of L/W, as predicted from demagnetizing factors in single domain particle. About 50% reduction of H_c due to a temperature rise, from 5 to 300 K, demonstrates considerable thermal activation in the magnetization reversal of nano-structured magnetic particles.     

Room temperature single-step electrosynthesized copper ferrite thin films and study of their magnetic properties

A single-step electrosynthesis of copper ferrite thin films from aqueous bath (which avoids anodization step for an incorporation of oxygen species into deposit) has been carried out at room temperature. Observed tetrahedral structured nanocrystalline copper ferrite thin films showed smooth, uniform and compact surface morphology. After annealing, increase in dielectric constant and reduced dielectric loss were observed. The saturation magnetization for annealed films was 292 emu/cm³ comparable to that of other reported ferrites.     

铁单质薄膜磁致伸缩行为与磁矩演化研究

磁致伸缩材料在传感器、位移器件等领域应用前景广阔,对此类材料的制备与实验已成为研究热点,但使用分子动力学方法模拟其磁致伸缩过程中内部磁矩的演化仍缺乏相关研究.本研究以磁致伸缩材料铁单质为研究对象,采用分子动力学方法建立单畴铁单质磁致伸缩模型.分析了铁单质薄膜磁致伸缩行为随初始磁矩的变化,以及在磁场作用下微观原子磁矩的变化与宏观磁致伸缩之间的关系.结果表明:模型磁化构型的演化与磁致伸缩行为有着密切联系,随着外加磁场强度增大,原子磁矩与外加磁场方向相同的区域面积逐渐增大,宏观表现为模型的磁致伸缩随磁场强度增大而伸长,并最终达到饱和,而边界处的原子磁矩是模型是否达到饱和磁致伸缩的关键.     

Effect of stress in copper ferrite thin films

Cubic copper ferrite thin films, obtained by rf sputtering on quartz and subsequent post-annealing and quenching, show a large coercivity of about 300–600 Oe. Stress measurements using X-ray diffraction show high value of stress of about 400–1000 MPa. Both the stress and coercivity are found to increase with the decrease of the thickness of the films. There appears to be a contribution of the stress to the coercivity of the films, in the in-plane M–H loops.     

Insight into magnetic properties in zinc ferrite thin films by tuning oxygen content

In this investigation ZnFe₂O₄ thin films were fabricated by RF magnetron sputtering and the magnetic behavior was examined under the influence of the growth conditions in three types of atmospheres, using near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and vibrating sample magnetometry (VSM). XPS revealed that films under an Ar/O₂ ratio 1:2 and 2:1 have Fe/Zn atomic ratios similar to the Fe/Zn stoichiometric composition; while the films deposited in pure Ar atmosphere, showed a formation of Fe ions (Fe⁰) reduced by Ar ion sputtering. VSM revealed an enhancing of the saturation magnetization for the ZFO in thin films unlike the samples in bulk, suggesting that Fe ions migrate to A sites and the interaction J_AB dominates the magnetic properties instead of J_BB interaction.     

Magnetic and dielectric properties of nanophase manganese-substituted lithium ferrite

Nanocrystalline manganese-substituted lithium ferrites viz. Li_0.5Fe_2.5−xMn_xO₄ (2.5≤x≥0) were prepared by sol-gel autocombustion method. X-ray diffraction analysis confirmed that as the concentration of manganese increases the cubic phase changes to the tetragonal phase. The variation of saturation magnetization was studied as a function of manganese content. All the compositions indicate that they are ferrimagnetic in nature. The dielectric constant, dielectric loss tangent and ac conductivity of all samples were measured at room temperature as a function of frequency. These parameters decrease with increase in frequency for all of the samples. The substitution of manganese plays an important role in changing the structural and magnetic properties of these ferrites. The compositional variation of dielectric constant and d.c. resistivity shows an inverse trend of variation with each other.     

Preparation and characterization of ZnSn-substituted barium ferrite thin films

The preparation of ZnSn-substituted barium ferrite films by sputtering deposition was studied. The as-sputtered films were amorphous, and annealing at a minimum of 750 °C was required to crystallize the films, based on the X-ray diffraction analysis and the magnetic measurements. Scanning electron microscopy combined with energy-dispersive X-ray spectroscopic microanalysis confirmed that the films were single phase with the composition BaZn_xSn_xFe_12−2xO₁₉, x=0.2−0.3, and their thicknesses were 0.4-1.0 μm when annealed at 750-900 °C. Atomic and magnetic force microscopy studies showed no significant grain growth upon annealing and that the films consisted of single-domain grains forming interaction-cluster-type domains. The natural ferromagnetic resonance frequency was determined at around 4 GHz, together with substantial magnetic losses that make these films promising candidates for microwave absorbers.     

Model of magnetization in thin magnetic films with one domain and two-domain basic structures

The magnetization processes in thin magnetic films are described by a model analysing the behaviour of one domain and two-domain basic structures (BS) in the applied magnetic field. These structures include the film areas with nearly constant crystal and magnetic parameters. The minimum of BS free energy including the energy in the internal magnetic field, the energy of the induced anisotropy and the domain-wall energy are taken into account. The initial and hysteresis curves of the sample depend on the function of distribution for the BSs are calculated. A good qualitative agreement with the results of other authors is observed if the films consists of one-domain or two-domain BS only. Our experimental data give also some support of the model.     

Magnetization dynamics in thin films and multilayers

The behavior of spin waves is influenced by essentially all the parameters which characterize a magnetic material – exchange interactions, anisotropy, surface effects, dipolar interactions, phase transitions and imperfections. Thus measurements of spin wave frequencies can give important information on characterizing different magnetic materials and structures. In this paper we outline the major results and calculational methods for long-wavelength spin waves in thin films and multilayers. While the primary attention is on ferromagnet-based structures, long-wavelength spin waves in antiferromagnets are also discussed. We indicate how particular measurements of spin wave frequencies can be used to extract the fundamental parameters of the different structures.     

Remarkable influence on the dielectric and magnetic properties of lithium ferrite by Ti and Zn substitution

The effect of Zn and Ti substitution on the magnetic and electrical properties of Li_0.5Zn_xTi_xMn_0.05Fe_2.45−2xO₄ ferrites (x=0.0 to 0.30 in steps of 0.05) +0.5wt% Bi₂O₃ prepared by a standard ceramic technique has been investigated. Electrical conductivity and dielectric measurements at different temperatures from 300 K to 700 K in the frequency range from 100 Hz to 2 MHz have been analysed. The variation of the real part of dielectric constant (ε^′) and loss tangent (tanδ) with frequency and temperature has been studied; it follows the Maxwell–Wagner model based on the interfacial polarization in consonance with the Koops phenomenological theory. It is found that the permittivity of zinc and titanium substituted lithium ferrite improves and shows a maximum value ( 1.5×10⁵) at 100 Hz for the x=0.25 sample. The dielectric transition temperature (T_d) depends on the concentration of Ti and Zn in Li_0.5Zn_xTi_xMn_0.05Fe_2.45−2xO₄. The saturation magnetization and Curie temperature both decrease with increase in the concentration of Ti and Zn in the ferrite.     

Structure and magnetic properties of Co-substituted NiZn ferrite thin films synthesized by the sol-gel process

Co-substituted NiZn ferrite thin films, Ni_0.5Zn_0.5Co_xFe_2−xO₄ (0≤x≤0.2), were synthesized by the sol-gel process. The structure and magnetic properties of Ni_0.5Zn_0.5Co_xFe_2−xO₄ ferrite thin films have been investigated. The diffraction peak shifted towards the lower angle and the lattice parameter increased with Co substitution. There is little influence of Co substitution on the microstructure of NiZn ferrite thin films. The saturation magnetization gradually increases with the increase in Co substitution when x≤0.10, and decreases when x>0.10. Meanwhile, the coercivity initially decreases with the increase in Co substitution when x≤0.10, and increases when x>0.10.     

Ni-Zn铁氧体薄膜的结构和磁性

采用交替溅射方法制备了Ni_Zn铁氧体薄膜，并研究了薄膜成分和制 备条件例如热处理温度、氧分压、膜厚、衬底层等因素对Ni_Zn铁氧体薄膜的影响.实验表明沉积态薄膜为非晶态，经大气中不同温度热处理后得到了尖晶石结构，其主峰为(311)峰 .另外，通过不同条件对Ni_Zn铁氧体薄膜的研究，找到了合适的Ni_Zn铁氧体薄膜的制备条件. 关键词： 薄膜 Ni_Zn铁氧体 交替溅射     

Optical properties and morphology of thin diindenoperylene films

Thin films of diindenoperylene deposited on weakly interacting substrates (quartz) are characterized with scanning probe microscopy techniques at room temperature and by pico-second time-resolved fluorescence spectroscopy between 5 and 300 K. Pronounced T-dependencies of fluorescence spectra and decays are found. The interplay between two fluorescence series in a narrow temperature range has been spectrally and temporally resolved. The possible origin of the observed series, competing energy transfer and quenching processes is discussed.     

Electrical and magnetic properties of RE-doped ZnO thin films (RE = Gd, Nd)

Due to the small magnetic moments observed for 3d transition metals in ZnO [M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, G. Benndorf, J. Lenzner, D. Spemann, A. Setzer, K.W. Nielsen, P. Esquinazi, M. Grundmann, Thin Solid Films 486 (2005) 117], there is still space for optimizing ZnO-based diluted magnetic semiconductors for spintronics applications. Motivated by the observation of magnetic moments as high as 4000μ_B/Gd atom in GaN:Gd [S. Dhar, O. Brandt, M. Ramsteiner, V.F. Sapega, K.H. Ploog, Phys. Rev. Lett. 96 (2005) 037205], we investigated ZnO films doped with 0.01, 0.1 or 1 at.% rare earth (RE) metals. The films, with thicknesses between 20 nm and 1 μm, have been grown by pulsed laser deposition on a-plane sapphire or fused silica substrates.The homogenous incorporation of the RE ions in ZnO was investigated by combined Rutherford backscattering and particle induced X-ray emission measurements. Hall measurements revealed an unexpected dependence of the electron concentration on film thickness, proving a non-uniform distribution of electrically active defects. Magnetotransport measurements at different temperatures were performed to study the magnetoresistance and the presence of the anomalous Hall effect. Large negative magnetoresistance was obtained at 5 K, while no anomalous Hall effect was observed. These results indicate that there are no exchange interactions between the RE ions.