The effects of trap density on current bistability and negative differential resistance in organic bistable devices

Current bistable properties and negative differential resistance (NDR) behaviors of organic bistable devices (OBDs) with a single layer were simulated by using Shockley–Reed statistics for the trap population. The current–voltage (I–V) curves were calculated to investigate the effects of the trap density on the NDR characteristics of current bistabilities in the OBDs. The simulation results of the I–V curves showed that the current bistability and the NDR behavior of the OBDs were dominantly attributed to the trapped electrons in the organic layer. The NDR behavior of the I–V curve appeared with increasing trap density, and the increasing rate of the internal electric field caused by the trapped electrons became larger than that of the external electric field due to the applied voltage. This resulted in the appearance of NDR behavior in the I–V curves. These results can help improve understanding of the effects of the trap density on the current bistability and the origin of the NDR behavior in the I–V characteristic in OBDs.     

Fabrication of heterostructure-emitter bipolar transistor with a doping-superlattice collector

Grown by molecular beam epitaxy, a sawtooth-doping-superlattice (SDS) structure has been employed in the collector region of a heterostructure-emitter bipolar transistor. For the studied structure, conventional transistor behavior and controllable S-shaped negative-differential-resistance (NDR) performance were simultaneously achieved. First, due to the avalanche multiplications within SDS periods or emitter-base p-n junction depletion region, a bi-directional switching phenomenon was exhibited under the two-terminal operation. In addition, when a base current or bias was applied, transistor properties and a controllable S-shaped NDR family in the large current regime were obtained. The best common-emitter current gain was 25.     

Anomalous negative-differential-resistance (NDR) characteristics of n+-GaAs/n−-GaAs/n-In0.2Ga0.8As/i-GaAs structure

An n⁺-GaAs/n⁻-GaAs/n-In_0.2Ga_0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage (V_DS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias (V_GS). The influence ofV_GSbias on the NDR characteristics is investigated.     

Negative differential resistance in ZnO coated peptide nanotube

We investigate the room temperature electronic transport properties of a zinc oxide (ZnO) coated peptide nanotube contacted with Au electrodes. Current–voltage (I–V) characteristics show asymmetric negative differential resistance (NDR) behavior along with current rectification. The NDR phenomenon is observed in both negative and positive voltage sweep scans, and found to be dependent on the scan rate and humidity. Our results suggest that the NDR is due to protonic conduction arising from water molecule redox reaction on the surface of ZnO coated peptide nanotubes rather than the conventional resonant tunneling mechanism.     

The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices

From experimental time dependences of the instantaneous brightness and the total current passing through a ZnS: Mn thin-film electroluminescent device, capacitance-voltage, charge-voltage, and current-voltage characteristics of the device are calculated. Conditions for negative differential resistance (NDR) of S and N types are found. An NDR mechanism that exploits the ionization and the recharge of deep donors and acceptors (zinc and sulfur vacancies) with the formation of space charge at the cathodic and anodic interfaces of the phosphor is suggested.     

Density of states in a mesoscopic SNS junction

The semiclassical theory of proximity effects predicts a gap E _g～?D/L ² in the excitation spectrum of a long diffusive superconductor/normal-metal/superconductor (SNS) junction. Mesoscopic fluctuations lead to anomalously localized states in the normal part of the junction.As a result, a nonzero, yet exponentially small, density of states (DOS) appears at energies below E _g. In the framework of the supermatrix nonlinear σ model, these prelocalized states are due to the instanton configurations with broken supersymmetry. The exact result for the DOS near the semiclassical threshold is found, provided the dimensionless conductance of the normal part G _N is large. The case of poorly transparent interfaces between the normal and superconductive regions is also considered. In this limit, the total number of subgap states may be large.     

Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction

Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h ₀=0 to h ₀=E _F (Fermi energy), and then it goes down. At h ₀=E _F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h ₀=E _F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.     

Spin-dependent transport properties and Seebeck effects for a crossed graphene superlattice <Emphasis Type="Italic">p-n</Emphasis> junction with armchair edge

Using the nonequilibrium Green’s function method combined with the tight-binding Hamiltonian, we theoretically investigate the spin-dependent transmission probability and spin Seebeck coefficient of a crossed armchair-edge graphene nanoribbon (AGNR) superlattice p-n junction under a perpendicular magnetic field with a ferromagnetic insulator, where junction widths W₁ of 40 and 41 are considered to exemplify the effect of semiconducting and metallic AGNRs, respectively. A pristine AGNR system is metallic when the transverse layer m = 3j + 2 with a positive integer j and an insulator otherwise. When stubs are present, a semiconducting AGNR junction with width W₁ = 40 always shows metallic behavior regardless of the potential drop magnitude, magnetization strength, stub length, and perpendicular magnetic field strength. However, metallic or semiconducting behavior can be obtained from a metallic AGNR junction with W₁ = 41 by adjusting these physical parameters. Furthermore, a metal-to-semiconductor transition can be obtained for both superlattice p-n junctions by adjusting the number of periods of the superlattice. In addition, the spin-dependent Seebeck coefficient and spin Seebeck coefficient of the two systems are of the same order of magnitude owing to the appearance of a transmission gap, and the maximum absolute value of the spin Seebeck coefficient reaches 370 µV/K when the optimized parameters are used. The calculated results offer new possibilities for designing electronic or heat-spintronic nanodevices based on the graphene superlattice p-n junction.     

Strong n-type molecule as low bias negative differential resistance device predicted by first-principles study

A first-principles study of the transport properties of two thiolated pentacenes sandwiching ethyl is performed. The thiolated pentacene molecule shows strong n-type characteristics when contact Ag lead because of low work function about metal Ag. A strong negative differential resistance (NDR) effect with large peak-to-valley ratio of 758% is present under low bias. Our investigations indicate that strong n- or p-type molecules can be used as low bias molecular NDR devices and that the molecular NDR effect based on molecular-level leaving not on molecular-level crossing has no hysteresis.     

Negative differential resistance and rectification effects in zigzag graphene nanoribbon heterojunctions: Induced by edge oxidation and symmetry concept

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of H-terminated zigzag graphene nanoribbon (H/ZGNR) and O-terminated ZGNR/H-terminated ZGNR (O/ZGNR–H/ZGNR) heterostructure under finite bias. Moreover, the effect of width and symmetry on the electronic transport properties of both models is also considered. The results reveal that asymmetric H/ZGNRs have linear I–V characteristics in whole bias range, but symmetric H-ZGNRs show negative differential resistance (NDR) behavior which is inversely proportional to the width of the H/ZGNR. It is also shown that the I–V characteristic of O/ZGNR–H/ZGNR heterostructure shows a rectification effect, whether the geometrical structure is symmetric or asymmetric. The fewer the number of zigzag chains, the bigger the rectification ratio. It should be mentioned that, the rectification ratios of symmetric heterostructures are much bigger than asymmetric one. Transmission spectrum, density of states (DOS), molecular projected self-consistent Hamiltonian (MPSH) and molecular eigenstates are analyzed subsequently to understand the electronic transport properties of these ZGNR devices. Our findings could be used in developing nanoscale rectifiers and NDR devices.     

Theoretical study on transport properties of a BN co-doped SiC nanotube

We investigate the electronic transport properties of silicon carbide nanotubes (SiCNT) in presence of both boron (B) and nitrogen (N) impurities. The results show that co-doping BN impurities suppresses the important negative differential resistance (NDR) property. NDR suppression is attributed to the introduction of new electronic states near the Fermi level followed by weak orbital localization. BN co-doping results in exponential current-voltage (I-V) characteristics which is in contrast to linear I-V characteristics for individual boron and nitrogen doped SiCNTs. HOMO has no contribution from B impurity, whereas, LUMO has contribution from N impurity at low and high bias.     

The electronic transport characteristics of hybridized hexagon beryllium sulfide and graphene nanoribbons

Hybridized Z-Be_xS_yC_z $(x+y+z=16)$ systems connected by zigzag beryllium-sulfide (BeS) and graphene nanoribbons are theoretically designed, and their electronic transport characteristics are explored by first-principles approach. For the hybridized systems with unequal number of x and y, i.e. z is an odd number, an exceptional negative differential resistance (NDR) property occurs. However, for the hybridized systems including an even number of zigzag carbon chains, namely x equal to y, an interesting current-limited behavior happens. Meanwhile, the NDR phenomenon disappears. The spin transport properties of these hybridized Z-Be_xS_yC_z systems with parallel magnetism configuration also reveal the above odd–even dependence conductance behavior.     

Chemical bonding and electronic structures at magnesium/copper phthalocyanine interfaces

Chemistry, electronic structure and electrical behavior at the interfaces between copper phthalocyanine (CuPc) and Mg with a reverse formation sequence were investigated using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), and current-voltage (I-V) measurements. A chemical reaction occurs between CuPc and Mg irrespective of the deposition sequence. Despite having different reaction zone thicknesses, both the CuPc-on-Mg and the Mg-on-CuPc interfaces exhibit chemistry-induced gap states and identical carrier injection barriers, which are confirmed by the symmetric electrical behavior obtained from I-V characteristics of devices with a structure of Mg/CuPc/Mg. These findings contrast with those expected from physisorptive noble metal-CuPc interfaces and suggest that strong local chemical bonding is a primary factor determining molecular level alignment at reactive metal-CuPc interfaces.     

Current controlled negative differential resistance behavior in Co2FeO2BO3 and Fe3O2BO3 single crystals

I–V curves showing negative differential resistance (NDR) are reported for single crystals of Co₂FeO₂BO₃ at 315 K and 290 K and for Fe₃O₂BO₃ at 300 K, 260 K and 220 K. Resistivity measurements are presented for both systems, parallel and perpendicular to the c axis, in the range 315–120 K. The high hysteretic behavior of the I–V curves in Co₂FeO₂BO₃ around room temperature is discussed and the heat dissipated is estimated, suggesting an increase in the sample temperature of almost 22 K for the I–V curve at 315 K and a dominant contribution of Joule self-heating for the observed NDR. In contrast, insignificant hysteresis is observed on the I–V curves of Fe₃O₂BO₃ around room temperature. The depinning of charge order domains is suggested as the main contribution to the NDR phenomenon for Fe₃O₂BO₃. The high reproducibility of the NDR in the Fe₃O₂BO₃ single crystal allows its use as a low frequency oscillator, as it is demonstrated.     

Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (N _D). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (V _oc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N _D leads to an increase of V _oc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N _D is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.     

Structure of Electromagnetic Fields in Crossed Gaussian Beams

Expressions for the fields of crossed Gaussian beams with foci shifted relative to the point of intersection of their axes are derived. It is shown that the linear corrections in parameter ε=1/kρ₀ must be taken into account in the crossed-beam intensity distribution (in contrast to the case of a single beam). The interference of crossed Gaussian beams has been investigated based on the intensity calculations taking into account linear corrections to the Poynting vector. The residual electron energy in crossed pulses is multiply increased in comparison with the case of acceleration in a single Gaussian pulse.     

Spin-polarized transport properties of a pyridinium-based molecular spintronics device

By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based “radical-π-radical” molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.     

Transport properties and mechanism of C60 coupled to carbon nanotube electrode

By applying non-equilibrium Green's functions in combination with density-functional theory, we investigate electronic transport properties of C₆₀ coupled to carbon nanotubes and Li electrodes. The results show that electronic transport properties of CNT-C₆₀-CNT and Li-C₆₀-Li systems are completely different. Nonlinear I-V characteristic, varistor-type behavior and negative differential resistance (NDR) phenomenon are observed when electrodes are carbon nanotubes. We discuss the mechanism of I-V characteristics of CNT-C₆₀-CNT systems in details. Our results suggest conductance, energy level of Frontier molecular orbitals, energy gap between HOMO and LUMO, the coupling between molecular orbitals and electrodes are all playing critical roles in electronic transport properties.     

Electronic transport through a C60– n X n (X=N and B) molecular bridge

By applying the non-equilibrium Green's function (NEGF) technique, the Landauer–Buttiker theory and the Fisher–Lee formula, we have investigated the transport behavior of a C_{60– n} X _n (X=N, B) molecule coupled to two semi-infinite SWCNT electrodes. In this study, the coupling through the carbon, boron and nitrogen atoms to the electrodes will be considered. We study the effects of different contact geometries, the electron–phonon interaction and the number of doped atoms on the current value and negative differential resistance (NDR) behavior of C_{60– n} X _n . Our results indicate that the transmission coefficient and the NDR behavior of C_{60– n} X _n vary on changing n and X. Moreover, NDR behavior is observed in C_{60– n} X _n with different contacts and in C₆₀ with C₅ and C₆ contacts. C_{60– n} X _n molecules are suggested for the operation of devices with a nanoscale current.     

Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlO_x/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe₃O₄ layer at the CoFe/AlO_x interfaces. The Fe L_2,3 edge core level shifts are also consistent with those of Fe₃O₄. We find no Fe₃O₄ layer in junctions with normal TMR. We believe this Fe₃O₄ layer is responsible for the inverse TMR.