Phase transitions in the tantalum-hydrogen system observed by PAC

The perturbation felt by¹⁸¹Hf probes in a¹⁸¹HfTa lattice loaded with 30 at% hydrogen was observed by PAC as a function of temperature. Three different interactions were identified: 1) Ν_Q1=433 (6) MHz, η=0.45 2) Ν_Q2=142 (9) MHz, η=0.9, and 3) Ν_Q?0, σ=4–14 Μ^?1 which are attributed to the Β^?, ε^? and α-phase in TaH system, respectively.     

Nuclear orientation of111m Cd in Zn and Be and the quadrupole moment of the 245keV state

The 48.7 m^111m Cd activity was implanted in Zn and Be single crystals which were soldered to the cold finger of a dilution refrigerator and kept below 0.2 K during implantation. Subsequent nuclear orientation experiments allowed the determination of the quadrupole interaction frequencyv _Q of the 11/2^? isomeric state of¹¹¹Cd in Zn and Be as ?139 (15) MHz and +43(16) MHz respectively. With these results we derive the quadrupole moment of the 5/2⁺ 245 keV level of¹¹¹Cd including sign asQ = +0.83(13) b and the sign of the electric field gradient for Cd in Be. The half-life of^111m Cd was redetermined as 48.67 (6) m.     

Quadrupole interaction at Ta and lattice location of Hf in Be

The time-differential perturbed angular correlation technique (TDPAC) has been applied to the 482 keV excited state of¹⁸¹Ta, to determine the nuclear electric quadrupole interaction (QI) at Ta in Be. Sources were prepared by ion-implantation of¹⁸¹Hf in Be. Particle channeling measurements have revealed that. Hf impurities implanted in Be reside primarily at the tetrahedral interstitial site. The fundamental QI frequency obtained for Ta at this interstitial site in Be is |v _Q| =e ² qQ/h = 227.0 ± 2.2 MHz which corresponds to an electric field gradient |eq|=(3.71±0.15)×10¹⁷ V/cm². This result is discussed in terms of results for Cd impurities in the same system and the systematics of the impurity QI in metals.     

Electric field gradient for indium in Sb and Bi semimetals

Using time differential pertubed angular correlation technique we have measured QI frequency at¹¹⁷In in semimetals Sb and Bi at temperatures 77 K and 300 K. The drastic difference of _Q for¹¹⁷In and¹¹⁹In in these hosts suggests two sites for the probes due to different methods of sample preparation. The magnitudes of EFG deviate completely from those predicted by covalent bond model but they seem to fit in the general trend for¹¹¹Cd and¹¹⁷In QI frequencies in metallic hosts.     

Temperature dependence of quadrupole interaction of99Ru in Zn

The quadrupole interaction (QI) of⁹⁹Ru as a dilute impurity in Zn, Cd and Sn lattices was studied by using time differential perturbed angular correlation technique. The electric field gradients calculated from the measured quadrupole interaction frequencies at room temperature are 5.14 × 10¹⁷ volts/cm² for⁹⁹RuZn, 4.58 × 10¹⁷ volts/cm² for⁹⁹RuCd and 2.87 × 10⁹⁹ volts/cm² for⁹⁹RuSn. The temperature dependence of the QI studied in the case⁹⁹RuZn is similar to that of¹¹⁷InZn.     

Behavior of antimony above solid solubility in silicon produced by implantation and laser annealing

Abstract

Antimony implantation into <111> silicon was carried out at RT with a dose of 4.5 × 10¹⁵ cm^?2, energy 75 keV. For the annealing of the sample pulses of a Q-switched ruby laser were used with energy density of ～ 1.5 Joule/cm² and duration of 15–20 nsec. Hall effect measurement was applied to determine the electrical activity of the layers. Lattice location and the depth profile of Sb was studied by RBS and channeling technique. Measurements show that after laser annealing Sb occupies mostly substitutional sites in Si with 84% electrical activity. It has been shown that after laser annealing the concentration of Sb in lattice sites is almost an order of magnitude higher than the limit of solid solubility. Isochron and isothermal annealing of these samples up to 1150°C was carried out to study the kinetics of reverse annealing of antimony.     

The electric field gradient at the nuclear site of177Lu in Zn and In

The electric quadrupole interaction frequencyν _Q =eQV _zz /h of¹⁷⁷Lu in single crystals of Zn and In has been measured by the method of low temperature nuclear orientation. The results are $$\begin{gathered} v_Q ({}^{177}Lu\underline {Zn} ) = - 180(5)MHz \hfill \\ v_Q ({}^{177}Lu\underline {In} ) = - 19(5)MHz. \hfill \\ \end{gathered} $$ With the known quadrupole moment of¹⁷⁷LuQ=3.39 (2) b we derive for the electric field gradientV _zz (Lu Zn)=?2.20 (5)×10¹⁷ V/cm² andV _zz (Lu In)=?0.23 (6)×10¹⁷ V/cm². The results are compared with magnetostriction measurements of silver single crystals doped with rare earth atoms.     

Cavities in silicon investigated with the PAC-probe 111In

The perturbed angular correlation technique (PAC) was used to study the creation and development of He-induced cavities. In order to investigate the interaction of Indium atoms with cavities in Silicon the Bonn isotope separator was used to implant overlapping profiles of He (10 keV) and radioactive ¹¹¹In (160 keV) into undoped FZ-silicon. To get insight into the cavity formation mechanism samples were prepared with various He-doses (0.6, 2 and 6× 10¹⁶ ions/cm²). The samples were measured directly after implantation and after different annealing steps (t_hold= 10 min, T = 500–1100oC). Further, different implantation and annealing sequences were used. At higher He doses (2 and 6× 10¹⁶ ions/cm²) we find a large fraction of ¹¹¹In probe atoms subjected to an electric field gradient (EFG) corresponding to a quadrupole interaction frequency (QIF) of ν_Q= 411(6) MHz with η= 0.25(4). The corresponding defect configuration is formed most effectively after He implantation into annealed, ¹¹¹In doped Si. This and the affinity of In to vacancies leads us to the assumption that, similarly to the situation in metals, the Indium atoms act as nucleation centres for vacancy clusters (cavities) and are situated on the inner walls of the cavities. This revised version was published online in August 2006 with corrections to the Cover Date.     

The electric quadrupole interaction of 111Cd in ZrZn2 and Zn in the samples prepared at 8 GPa

The perturbed angular correlation (PAC) measurements with the ¹¹¹In-¹¹¹Cd nuclear probe embedded into the lattice of the cubic (C15) Laves compound ZrZn₂ showed that ¹¹¹Cd nuclei experienced an axially symmetric electric quadrupole interaction with a frequency ν _Q  = 132.4 MHz at room temperature. The samples were synthesized and doped with the probe at a pressure 8 GPa. The temperature dependence of ν _Q was shown to be linear: ν _Q (T) = 147(1 − 0.033 T) MHz. Since the value of ν _Q is very close to that known for ¹¹¹Cd in the lattice of Zn, we have checked if it could be assigned to residual Zn metal in the sample. For the Zn sample melted and doped with ¹¹¹In at 8 GPa we have obtained ν _Q  = 117.3 MHz at 300 K and 127 MHz at 80 K – both values considerably lower than that for ¹¹¹In doped Zn samples prepared at an ambient pressure. These data, and the fact that ν _Q (T) in Zn is known to follow the T ^3/2 law, allow to attribute the ν _Q value quoted above to ¹¹¹Cd nuclei at the substitutional sites with tetrahedral symmetry in the Zn sublattice of ZrZn₂.     

Hyperfine interaction study of electric field gradient in hafnium phosphide using181Ta probe

The hyperfine interaction of¹⁸¹Ta in HfP has been investigated by time differential perturbed angular correlation method which yielded interaction frequencyv _Q=630.20(15) MHz. The observed electric field gradient is calculated to be 1.66(25) × 10²⁰ V/m².     

The electric field gradient at Ta in HfB2

Using the time-differential perturbed-angular correlation technique, we have observed the nuclear electric quadrupole interaction at ¹⁸¹Ta (482 keV) as an impurity in the refractory compound HfB₂. The measured interaction frequency is ν_Q=730±5 MHz which corresponds to an electric field gradient of |eq|=(1·19±0·05)×10¹⁸ V/cm² at room temperature. By considering a second measurement at 4·2°K, which yields the same results as above, and by comparison with available results for Hf in HfB₂, we conclude that the d-electron density of states at the Fermi level is quite small in agreement with trends observed by others.     

The electric field gradient at 57Fe in zinc and comparisons with the conduction-electron charge-shift model

The magnitude of the electric field gradient at ⁵⁷Fe probe nuclei in Zn is measured using Mössbauer effect and the value is 2.34 × 10¹⁷ V/cm². The electric field gradients at Fe probe nuclei in Ti, Zn, Zr, Cd and Hf hosts are compared with the predictions of the conduction-electron charge-shift model.     

Mössbauer and XRD Comparative Study of Host Rock and Iron Rich Mineral Samples from Paz del Rio Iron Ore Mineral Mine in Colombia

The local environment of implanted ¹¹¹Ag (t _1/2 = 7.45 d) in single-crystalline [0001] ZnO was evaluated by means of the perturbed angular correlation (PAC) technique. Following the 60 keV low dose (1 × 10¹³ cm⁻²) ¹¹¹Ag implantation, the PAC measurements were performed for the as-implanted state and following 30 min air annealing steps, at temperatures ranging from 200 to 1050°C. The results revealed that 42% of the probes are located at defect-free S_Zn sites (ν _Q ∼ 32 MHz, η = 0) in the as-implanted state and that this fraction did not significantly change with annealing. Moreover, a progressive lattice recovery in the near vicinity of the probes was observed. Different EFGs assigned to point defects were furthermore measured and a general modification of their parameters occurred after 600°C. The 900°C annealing induced the loss of 30% of the ¹¹¹Ag atoms, 7% of which were located in regions of high defects concentration.     

利用交流阻抗谱揭示Ir(111)电极在酸性溶液中的氢吸附动力学

本文利用阻抗谱研究Ir(111)电极在HClO₄和H₂SO₄中溶液中的氢吸附行为. 在HClO₄溶液中,随着施加电位从0.2 V降到0.1 V(vs RHE),Ir(111)电极上氢吸附速率从1.74×10^-8 mol·cm^-2·s^-1增大到 3.47×10^-7 mol·cm^-2·s^-1 . 与相同条件下Pt(111)电极上的氢吸附速率相比,Ir(111)上的氢吸附速率要小1∽2个数量级,这是由于Ir(111)电极与H₂O结合能力更强,因此位于水合氢键网络中的氢离子需要克服更高的能垒才能重新定向进而发生欠电位沉积. 在H₂SO₄溶液中,氢吸附电位负移了200 mV,吸附速率也下降了一个数量级,这是由于Ir(111)电极表面强吸附的硫酸根/硫酸氢根物种的阻碍作用. 结果表明,在电化学环境下,位于电极表面附近的水分子的取代和重新定向在很大程度上影响了氢吸附过程.     

Polycrystalline GaSb films prepared by the coevaporation technique

Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during deposition. The average surface roughness of the films was estimated to be 10 nm. Grain boundary trap states varied between 2×10¹² and 2.2×10¹² cm^?2 while barrier height at the grain boundaries varied between 0.09 eV and 0.10 eV for films deposited at higher temperatures. Stress in the films decreased for films deposited at higher temperatures. XPS studies indicated two strong peaks located at ～543 eV and ～1121 eV for Sb 3d_3/2 and Ga 2p_3/2 core-level spectra, respectively. The PL spectra measured at 300 K was dominated by a strong peak located ～0.55 eV followed by two low intensity peaks ～0.63 eV and 0.67 eV. A typical n-Si/GaSb photovoltaic cell fabricated here indicated V _oc～311 mV and J～29.45 mA/cm², the density of donors (N _d)～3.87×10¹⁵ cm^?3, built in potential (V _bi)～0.48 V and carrier life time (τ)～28.5 ms. Impedance spectroscopy measurements indicated a dielectric relaxation time ～100 μs.     

Hyperfine interactions of 111Cd in TiO2 (Rutile) studied by perturbed angular correlations

The time-differential perturbed angular correlation for ¹¹¹Cd nuclei has been measured after ¹¹¹In implantation into polycrystalline TiO₂. The observed perturbation functions are characterized by a well-defined electric field gradient with the quadrupole coupling constant ν_Q = 105(1) MHz and the asymmetry parameter η = 0.18(1). We attribute these hyperfine parameters to ¹¹¹Cd on the (distorted) substitutional cation site in rutile. The PAC results are compared with those in SnO₂ rutile as well as with X-ray diffraction, RBS channeling experiments and point charge model calculations including relaxation of the probe atom surrounding.     

Ionic conductivity of Zr1−xIn2xO2−x

As x in Zr(In)O_2?x is increased from 0.08 to 0.16 (9–19 mole per cent In₂O₃) the activation energy E(x) for ionic conduction increases from 1.05 to 1.51 eV; the concuctivity decreases from 2 × 10^?5 to 3 × 10^?6Ω^?1cm^?1at 400°C, is composition-independent at about 580°C, and increases from 1 × 10^?2 to 4 × 10^?2Ω^?1cm^?1 at 800°C. The pre-exponential term of the Boltzmann-type conductivity equation depends exponentially on E(x), a much stronger dependence on x than theoretically expected with a model for ionic conductivity that includes nearest-neighbor defect interactions. Analysis of reported conductivity data for Zr(M)O_2?x (M = Sc, Y, Ca and rare earth metals) and other doped oxide electrolytes with fluorite-type structure reveals that the same relationship is observed with these materials when x γ0.08. It is shown that ionic conduction in these oxides is consistent with nearest neighbor vacancy-cation defect interaction forx < 0.08 but that an additional complex interaction with composition-dependent free energy ΔG(x) occurs when xγ 0.08.The lattice constant of Zr(In)O_2?x with the cubic fluorite-type structure is independent of composition, 5.114 ± 0.002 Å, in agreement with ionic size considerations.     

Effect of antimony doping on the low‐temperature performance of solution‐processed indium oxide thin film transistors

The effects of antimony (Sb) doping on solution‐processed indium oxide (InO_x) thin film transistors (TFTs) were examined. The Sb‐doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I_ON/OFF ratio of 4.6 cm²/V s, 0.29 V/decade, 1.9 V, and 3 × 10⁷, respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InO_x TFTs. This improvement was attributed to the reduction of oxygen‐related defects and/or the existence of the lone‐pair s‐electron of Sb³⁺ in amorphous InSbO films. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Interaction of repulsive impurity pairs in silver

Probe-impurity interactions of In–Cd and In–Zn pairs in silver matrix have been studied using ¹¹¹In-TDPAC measurements. The interactions are repulsive for both the pairs. For 3% alloys, the interaction energy of In–Cd pairs in Ag is 51± 2 meV and that of In–Zn pairs is 19± 1 meV. The Electric Field Gradient (EFG) at ¹¹¹Cd due to a single Cd nn impurity to the In probe is found to be 0.83± 0.04× 10²¹ V/m² while for a Zn impurity is 1.50± 0.05× 10²¹ V/m². Cd–Cd contact interaction in silver is also found to be repulsive. This revised version was published online in August 2006 with corrections to the Cover Date.     

Temperature and frequency dependence of the ferroelectric characteristics of BaTiO<Subscript>3</Subscript> thin films for nonvolatile memory applications

Ferroelectric thin films of BaTiO₃ were successfully deposited on SiO₂/Si substrate under the optimal rf magnetron sputtering conditions, and their electrical and ferroelectric characteristics were discussed. The memory window, capacitance, threshold voltage and leakage current density of MFIS structure under different frequencies and temperatures were also reported. The variations of ferroelectric capacitance and threshold voltage would be attributed to the as-deposited BaTiO₃ films of MFIS structure as the temperature and frequency increased. Besides, the memory window, threshold voltage and leakage current density would be degraded from 4 V, 5 V and 8×10^-10 A/cm² to 2.5 V, 10 V and 5×10^-4 A/cm², respectively, as the temperature increased from 25 to 90 °C. PACS 77.84.-s; 81.15.Cd; 73.40.Qv; 51.50.+v; 67.80.Gb