AlN, GaN, AlxGa1 − xN nanotubes and GaN/AlxGa1 − xN nanotube heterojunctions

Semiconductor optoelectronic devices based on GaN and on InGaN or AlGaN alloys and superlattices can operate in a wide range of wavelengths, from far infrared to near ultraviolet region. The efficiency of these devices could be enhanced by shrinking the size and increasing the density of the semiconductor components. Nanostructured materials are natural candidates to fulfill these requirements. Here we use the density functional theory to study the electronic and structural properties of (10,0) GaN, AlN, Al_xGa_1 − xN nanotubes and GaN/Al_xGa_1 − xN heterojunctions, 0<x<1. The Al_xGa_1 − xN nanotubes exhibit direct band gaps for the whole range of Al compositions, with band gaps varying from 3.45 to 4.85 eV, and a negative band gap bowing coefficient of −0.14 eV. The GaN/Al_xGa_1 − xN nanotube heterojunctions show a type-I band alignment, with the valence band offsets showing a non-linear dependence with the Al content in the nanotube alloy. The results show the possibility of engineering the band gaps and band offsets of these III-nitrides nanotubes by alloying on the cation sites.     

Mechanical, tribological, and electrochemical behavior of Cr1−xAlxN coatings deposited by r.f. reactive magnetron co-sputtering method

Chromium aluminum nitride (Cr_1−xAl_xN) coatings were deposited onto AISI H13 steel and silicon substrates by r.f. reactive magnetron co-sputtering in (Ar/N₂) gas mixture from chromium and aluminum targets. Properties of deposited Cr_1−xAl_xN coatings such as compositional, structural, morphological, electrochemical, mechanical and tribological, were investigated as functions of aluminum content. X-ray diffraction patterns of Cr_1−xAl_xN coatings with different atomic concentrations of aluminum (0.51 < x < 0.69) showed the presence and evolution of (1 1 1), (2 0 0), and (1 0 2) crystallographic orientations associated to the Cr_1−xAl_xN cubic and w-AlN phases, respectively. The rate of corrosion of the steel coated with Cr_1−xAl_xN varied with the applied power; however, always being clearly lower when compared to the uncoated substrate. The behavior of the protective effect of the Cr_1−xAl_xN coatings is based on the substitution of Cr for Al, when the power applied to the aluminum target increases. The mechanical properties were also sensitive to the power applied, leading to a maximum in hardness and a reduced elastic modulus of 30 and 303 GPa at 350 W and a monotonic decrease to 11 and 212 GPa at 450 W, respectively. Finally, the friction coefficient measured by pin-on disk revealed values between 0.45 and 0.70 in humid atmosphere.     

Non-Maxwellian electron energy distribution function in He,He/Ar,He/Xe/H<Subscript>2</Subscript> and He/Xe/D<Subscript>2</Subscript> low temperature afterglow plasma

Experimental studies of the electron energy distribution function “EEDF” under well defined conditions in flowing afterglow plasma, using a Langmuir probe are reported. The EEDF is measured in He₂ ⁺ and Ar⁺ dominated plasmas and in XeH⁺ and XeD⁺ dominated recombining plasmas. He is used as a buffer gas at medium pressures in all experiments (1600 Pa, 250 K). The deviation of the measured EEDF from Maxwellian distribution is shown to depend on plasma composition and on the processes governing the plasma decay. The influence of energetic electrons produced during the plasma decay on the body and tail of the EEDF is observed. The mechanism of energy balance in afterglow plasma is discussed.