X-ray diffraction studies of glasses in the systems Na2OMeOSiO2 (MeMg,Zn, Ca,Ba)

X-ray diffraction studies of glasses in the following ternary systems have been made: Na₂OMgOSiO₂, Na₂OZnOSiO₂, Na₂OCaOSiO₂ and Na₂OBaOSiO₂. The following heavy atom substitutions have been used: Ag for Na and Ge for Si. The changes in the electron radial distribution curves resulting from AgNa replacement can be explained as amplifications of relatively well-defined NaSi distances, which are nearly the same in all the glasses investigated. The GeSi substitution causes changes which can be explained on the basis of isostructural GeSi substitutions.     

Influence of sputtering conditions and electron energy on XPS depth profiling of Ge in SiO2

Ge nanocluster formation in SiO₂ is of growing interest for new electronic applications. Ion beam synthesis using high‐energy Ge implantation connected with thermal annealing is one possible preparation method of such clusters. In addition to investigations of electrical and structural changes during the cluster formation process we also studied chemical changes in the samples using x‐ray photoelectron spectroscopy (XPS). This was done with low‐energy noble gas ion sputtering for depth profiling. Binding state information one can get from the XPS data by means of factor analysis (FA) in combination with other structural investigations. However, mixed bonding states probably created by ion beam damage during sputter erosion are dominating the results. It is shown, that by changing the experimental conditions (ion beam impact depth during sputtering, electron information depth during XPS measurement) these mixed states are influenced in an appropriate manner. It is concluded that useful chemical information on the behavior of the implanted Ge can be derived despite of the ion beam damage. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Interface of GaN grown on Ge(1 1 1) by plasma assisted molecular beam epitaxy

Early efforts to grow GaN layers on germanium substrates by plasma assisted molecular beam epitaxy led to GaN domains, rotated by 8° relative to each other. Increased insight in the growth of GaN on germanium resulted in the suppression of these domain and consequently high quality layers. In this study the interface of these improved layers is investigated with transmission electron microscopy. The GaN layers show high crystal quality and an atomically abrupt interface with the Ge substrate. A thin, single crystalline Ge₃N₄ layer is observed in between the GaN layer and Ge substrate. This Ge₃N₄ layer remains present even at growth temperatures (850 °C) far above the decomposition temperature of Ge₃N₄ in vacuum (600 °C). Triangular voids in the Ge substrate are observed after growth. Reducing the Ga flux at the onset of GaN growth helps to reduce the triangular defect size. This indicates that the formation of voids in the Ge substrate strongly depends on the presence of Ga atoms at the onset of growth. However complete elimination was not achieved. The formation of voids in the germanium substrate leads to diffusion of Ge into the GaN layer. Therefore we examined the diffusion of Ge atoms into the GaN layer and Ga atoms into the Ge substrate. It was found that the diffusion of Ge into the GaN layer and Ga into the Ge substrate can be influenced by the growth temperature but cannot be completely suppressed. Our results suggest that Ga atoms diffuse through small imperfections in the Ge₃N₄ interlayer and locally etch the Ge substrate, leading to the diffusion of Ga and Ge atoms.     

EXAFS study on poly-Si1−XGeX films prepared by reactive thermal CVD method

Extended X-ray absorption fine structure analyses were carried out on Si_1−XGe_X films of different thicknesses, prepared by the reactive thermal chemical vapor deposition (CVD) method. From a Rutherford backscattering measurement, the Ge fraction was found to be high near the substrate interface. The Ge coordination ratio, Ge–Ge bond length and Ge–Si bond length decreased with increasing film thickness. The Ge fraction dependences of these parameters were found to be different from the results of previous studies on Si_1−XGe_X films prepared by molecular beam epitaxy. Our results are considered to be caused by the local structure formation around the Ge atoms during the reactive thermal CVD process.     

Decrease of the alkali signal during auger analysis of glasses

The decrease of the alkali signal during Auger electron spectroscopy (AES) has been studied on glasses with molar composition 20 M₂O · 80 SiO₂ and 20 M₂O · 10 CaO · 70 SiO₂, where M = Na and/or K. The samples were fractured in situ, and beam conditions in the region 1.5–3 keV and 1–40 μA were chosen. The K signal in 20 K₂O · 80 SiO₂ remained sufficiently constant to allow a reliable measurement. Its decrease showed an initial delay which can be explained by assuming a rapid decrease of the K concentration at some depth below the surface. The presence of CaO accelerates the migration of alkali during AES. This is not predicted by diffusion data.     

Reduction of grown-in dislocation density in Ge Czochralski-grown from the B2O3-partially-covered melt

Germanium (Ge) single crystals with an extremely low density of grown-in dislocations were grown by the Czochralski (CZ) technique with boron oxide (B₂O₃) liquid. Because attachment of particles floating on the melt surface to a growing Ge crystal leads to generation of dislocations during the growth, partial covering of the Ge melt surface with B₂O₃ liquid was attempted. Such attachment of particles was drastically suppressed or the particles were caught by the introduction of B₂O₃ liquid, and a particle-free Ge melt was realized in the central region of the melt surface. Ge single crystals were successfully grown from such melt, the grown-in dislocation density being 0–1×10³ cm⁻², which was remarkably lower than that in Ge crystals grown by a conventional CZ technique. The contaminations by B and O atoms of the grown crystal detected by SIMS analysis were very low. These Ge crystals have the potential for application to be applied as high-quality, dislocation-free substrates of GaAs solar cells for various usages including in space.     

XPS study of glassy Pd80Ge20

An X-ray photoemission and Auger electron spectroscopy study of the electronic structure of Pd₈₀Ge₂₀ alloy in its glassy and crystalline states is reported. The glassy state shows some modifications in the valence band structure, symmetry of the Pd $\text{3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{?3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ spin-orbit doublet and a shift in M₄₅-V-V Auger transition of Pd. Analysis of the chemical shifts in the core-level binding energies of the constituents indicates negligible charge transfer from the metalloid atom (Ge) to d-band of the Pd.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Electron beam poling in amorphous Ge-doped H:SiO2 films

Amorphous Ge-doped H:SiO₂ films on silica, deposited by matrix-distributed electron cyclotron resonance – plasma enhanced chemical vapor deposition, were irradiated with an electron beam while varying the dose. Using the Maker fringe method, second-harmonic generation was measured in the irradiated regions of the films. With a current of 5 nA, and an acceleration voltage of 25 kV for 25 s, a Ge-doped H:SiO₂ film (3.8 at.% Ge) showed a maximum second-order nonlinearity of d₃₃ = 0.0005 pm/V. In contrast, a H:SiO₂ film with a smaller Ge content (1.0 at.% Ge), showed a large SHG: d₃₃ = 0.06 pm/V when irradiated for 15 s. The second-harmonic generation in the films is caused by a frozen-in electric field induced by charge implantation from the electron beam. The strength of the electric field is determined by two conditions: the trapping centers (numbers, depth) and the remaining conductivity under large electric field.     

Si1-xGex Mixed Crystals Grown by Pulling-Down Technique with Multi-Capillary Channels

Si_1-xGe_x mixed crystals with 5 at% Ge concentration have been grown by the pulling-down technique using a crucible with multi-capillary channels. The unique feature of the technique is that Ge solute concentration of the small molten zone is maintained constant due to the condition of no back diffusion of solute through the capillary channels, and that the diffusion-controlled solute transport causes the effective distribution coefficient to be unity. The Ge concentration was measured by the electron probe microanalysis and observed to be homogeneous along both the longitudinal and radial directions. The two-dimensional distribution on the whole cross section was also found to be uniform.     

Ge and Ga K-edge EXAFS analyses on the structure of Ge-Ga-S-CsBr glasses

The local structure of Ge and Ga ions in (1 − x)(Ge_0.25Ga_0.10S_0.65)-xCsBr glasses (x = 0.00, 0.05, 0.10 and 0.12) were investigated using extended X-ray absorption fine structure (EXAFS) spectroscopy. CsBr formed [GaS_3/2Br]⁻ structural units in glass while Ge ions remained in GeS_4/2 tetrahedra, unaffected by CsBr addition. Rare-earth ions can be surrounded by Br ions only when CsBr/Ga ratio in glass became larger than unity.     

Modeling of the self-organizing processes in crystal-forming systems: Structural mechanism of assembly of the K2Ba[Ge[6]Ge

The self-assembly of the crystal structures of the K₂Ba[Ge^[6]Ge ₃ ^[4] O₉]₂, K₂Ge^[6]Ge ₃ ^[4] O₉, and BaGe^[6]Ge ₃ ^[4] O₉ germanates formed in the K-Ba-Ge-O system is modeled on a subpolyhedral level. In three topologically different three-dimensional MT frameworks (the M octahedra GeO₆ and the T tetrahedra GeO₄), the equivalent two-dimensional net 6464 + 664 (M: 2T) is separated, and its two-color decomposition into primary MT contours (characterizing the structure of the cluster precursor) and secondary contours (reflecting the bonds between the clusters) is performed. The structural invariant of the MT frameworks is determined in the form of an M ₂ T ₄ cyclic hexapolyhedral cluster. It is demonstrated that these stable cyclic precursors of compositions K₂ M ₂ T ₄ and BaM ₂ T ₄ control all processes of the subsequent evolution of the MT crystal-forming complex and provide the formation of substructural units of a higher level with the participation of additional tetrahedra GeO₄. __________ Translated from Kristallografiya, Vol. 50, No. 6, 2005, pp. 1123–1134. Original Russian Text Copyright ? 2005 by Ilyushin.     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Epitaxial Ti₃GeC₂ thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti₃GeC₂ films grow by lateral step-flow with {112?0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.     

Synthesis and characterization of germanium sulfide aerogels

The synthesis of germanium sulfide gels by thiolysis reactions of a non-aqueous solution of Ge(OEt)₄, followed by supercritical fluid extraction to create aerogels, is described. Analysis of the as-prepared GeS_x aerogels by powder X-ray diffraction (PXRD) and surface area analysis reveals an amorphous structure exhibiting very high surface areas, 755 m²/g, that rival those of the best SiO₂ aerogels when compared on a per mole basis. Transmission electron microscopy shows that the aerogel material is composed of a continuous network of GeS_x colloidal particles assembled in a three-dimensional architecture. A detailed comparison of GeS_x aerogels and their xerogel (bench-top dried) counterparts in terms of the influence of the synthetic methodology on morphology and surface area is reported. In the presence of adventitious moisture, the amorphous GeS_x is oxidized to a crystalline phase identified by X-ray photoelectron spectroscopy, Raman spectroscopy and PXRD cell refinement to be hexagonal GeO₂.     

Coordination and optical attenuation of TiO2-SiO2 glass by electron energy loss spectroscopy

Electron energy loss spectroscopy (EELS) techniques have been applied to investigate both the coordination and optical attenuation of TiO₂-SiO₂ glass. The coordination was determined from the electron energy loss near edge fine structure (ELNES) of Ti L_2,3-edges, and the results show that Ti ions substitute for Si ions in the tetrahedral coordinated sites. The optical attenuation of the glass was obtained from low energy loss of EELS data through Kramers-Kronig analysis, and the results show that Ti-doped silica has an absorption edge near 4.0 eV.     

Structural dependence of ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses

Ultrafast third-order optical nonlinearity of Ge–Ga–Ag–S chalcogenide glasses at the wavelength of 820 nm has been measured using femtosecond time-resolved optical Kerr (OKE) technique. The results show that Ge–Ga–Ag–S glasses have large third-order optical nonlinear susceptibility, χ⁽³⁾ and the response time is also subpicosecond, which are predominantly due to the ultrafast distortion of electron cloud surrounding the balanced positions of Ge, Ga, Ag and S atoms. What’s more, a strong dependence of χ⁽³⁾ on the composition and microstructure of these glasses was found which shows that [GeS₄] and [GaS₄] tetrahedra play an important role on the third-order optical nonlinearity. These Ge–Ga–Ag–S chalcogenide glasses would be expected as promising materials applied on all-optical switching devices.     

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

The dislocation structure at the initial stage of relaxation of Ge_xSi_1−x films (x∼0.4–0.8) grown on Si (0 0 1) substrates tilted at 6° to the nearest (1 1 1) plane is studied. The use of Si substrates tilted away from the exact (0 0 1) orientation for epitaxial growth of Ge_xSi_1−x films (x≥0.4) allowed finding the basic mechanism of formation of edge dislocations that eliminate the mismatch stresses. Though the edge dislocations are defined as sessile dislocations, they are formed in accordance with the slipping mechanism proposed previously by Kvam et al. (1990). It is highly probable that a 60° misfit dislocation (MD) propagating by the slipping mechanism provokes the nucleation of a complementary 60° MD slipping in a mirror-like tilted plane (1 1 1). The reaction between these dislocations leads to the formation of an edge MD that ensures more effective reconciliation of the discrepancy. Comparative estimation of the slip velocities of the primary and induced 60° MDs and also of the resultant 90° MD is fulfilled. The slip velocity of the induced 60° MD is appreciably greater than the velocity of the primary 60° MD. Therefore, the induced MD “catches up” with the second front of the primary MD, thus forming a 90° MD propagating to both sides due to slipping of the 60° MDs forming it. The propagation velocity of the 90° MD is also greater than the slip velocity of a single 60° MD. For these reasons, 90° MDs under certain conditions that favor their formation and propagation can become the main defects responsible for plastic relaxation of GeSi films close to Ge in terms of their composition.     

Facile synthesis and luminescence properties of octahedral YVO4:Eu microcrystals

Uniform octahedral YVO₄:Eu³⁺ microcrystals have been successfully prepared through a designed two-step hydrothermal conversion method. One-dimensional precursor Y₄O(OH)₉NO₃ was first prepared through a simple hydrothermal process without using any surfactant, catalyst or template. Subsequently, well-defined octahedral YVO₄ was synthesized at the expense of the precursor during a hydrothermal conversion process. XRD results demonstrate that the diffraction peaks of the final product can be well indexed to the pure tetragonal phase of YVO₄. The SEM and TEM images indicate that the as-prepared YVO₄ sample has regular octahedral shape with sharp corners and well-defined edges. The as-obtained YVO₄:Eu³⁺ phosphor shows strong red emission under ultraviolet excitation or low-voltage electron beam excitation. Furthermore, this facile and general conversion method may be of much significance in the synthesis of many other lanthanide compounds with uniform morphology.