Influence of Magnetic Confinement on the Yellow Excitons in Cuprous Oxide Subject to an Electric Field

We study the spectrum of the yellow exciton series in crossed electric and magnetic fields. The electric field, applied along the optical axis, tilts the Coulomb potential between electron and hole, so that at sufficiently high fields exciton dissociation becomes possible, roughly when the electric dipole interaction energy exceeds the binding energy of an exciton state with principal quantum number n. For an applied voltage of U = 20 V all excitons above n = 6 are dissociated. Additional application of a magnetic field normal to the optical axis introduces magnetic confinement, due to which above a threshold field strength around B = 2.5 T the exciton lines re-emerge. The complex dispersion with increasing fields suggests quantum chaotic behavior in this crossed field configuration, so that the search for exceptional points may be promising.     

Electronic properties of a Weyl semimetal in crossed magnetic and electric fields

The study of Weyl semimetals is one of the most challenging problems of condensed matter physics. These materials exhibit interesting properties in a magnetic field. In this work, we investigate the Landau bands and the density of states (DOS) oscillations in a Weyl semimetal in crossed magnetic and electric fields. An expression is obtained for the energy spectrum of the system using the following three different methods: an algebraic approach, a Lorentz shift-based approach, and a quasi-classical approach. It is interesting that the energy spectrum calculated in terms of the quasi-classical approach coincides with the spectrum obtained using the microscopic approaches. An electric field is shown to change the Landau bands radically. In addition, the classical motion of a three-dimensional Dirac fermion in crossed fields is studied. In the case of a Dirac spectrum, the longitudinal (with respect to magnetic field) component of momentum (p _z ∥ H) is shown to be an oscillating function of the magnetic field. When the electric field is v⊥H/c, the Landau levels collapse and the motion becomes fully linear in an unusual manner. In this case, the wavefunction of bulk states vanishes and only states with p _z = 0 are retained. An electric field affects the character of DOS oscillations. An analytical expression is obtained for the quantum capacitance in crossed fields in the cases of strong and weak electric fields. Thus, an electric field is an additional parameter for adjusting the diamagnetic properties of Weyl semimetals.     

Combined effects of magnetic and electric fields on the interband optical transitions in InAs/InP quantum wire

Combined effects of magnetic and electric fields on the confined exciton in an InAs_1−xP_x/InP (x=0.2) quantum well wire are investigated taking into account the geometrical confinement effect. Variational formulism, within the frame work of effective mass approximation, is applied to obtain the exciton binding energy. The second order harmonic generation and the optical gain are carried out using compact density method. The strain effects are included with the confinement potential in the Hamiltonian. The energy difference of the ground and the first excited state is found in the presence of magnetic and electric fields taking into the consideration of spatial confinement effect. The result shows that the optical properties are more influenced taking into account the effects of geometrical confinement, magnetic field and electric field. It is shown that the telecommunication wavelength can be achieved with the suitable doping barrier material with the wire material and the external perturbations.     

Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential

In this work are studied the intense laser effects on the impurity states in GaAs-Ga_{1− x} Al _x As quantum wells under applied electric and magnetic fields. The electric field is taken oriented along the growth direction of the quantum well whereas the magnetic field is considered to be in-plane. The calculations are made within the effective mass and parabolic band approximations. The intense laser effects have been included through the Floquet method by modifying the confinement potential associated to the heterostructure. The results are presented for several configurations of the dimensions of the quantum well, the position of the impurity atom, the applied electric and magnetic fields, and the incident intense laser radiation. The results suggest that for fixed geometry setups in the system, the binding energy is a decreasing function of the electric field intensity while a dual monotonic behavior is detected when it varies with the magnitude of an applied magnetic field, according to the intensity of the laser field radiation.     

Redistribution of electrons between ellipsoids in a magnetic field in the quantum limit range in n-Bi-Sb alloys

The magnetoresistivities ρ₂₂(H) and ρ₃₂(H) and the Hall coefficient R _32.1 for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconducting alloy have been measured at low temperatures in magnetic fields up to H=14 T at H∥C ₂. The samples with three electron concentrations n ₁=1.25 × 10¹⁶ cm^s-3, n ₂=3.5×10¹⁶ cm^s-3, and n ₃=1.6×10¹⁷ cm^s-3 have been studied. The strong anisotropy of the electron spectrum of the alloys has made it possible to observe quantum oscillations of the magnetoresistivity ρ₂₂ (H) at H∥C ₂ for electrons of the secondary ellipsoids with the transition to the quantum limit in high magnetic fields. However, in the same magnetic fields, the quantization condition for electrons of the main ellipsoid is not satisfied. An increase in the energy of electrons of the secondary ellipsoids in the magnetic fields of the quantum limit leads to their migration to the main ellipsoid. After the complete migration, the Fermi energy for the alloy samples with the electron concentrations n ₁, n ₂, and n ₃ increases from 7.0 to 11.3 meV, from 11.0 to 17.1 meV, and from 20.2 to 30.6 meV, respectively. After the migration, the magnetoresistivity for electrons of the main ellipsoid increases with an increase in the magnetic field and the specific features in the behavior of the kinetic coefficients are observed in the vicinity of the magnetic field H=10 T. Therefore, the electronic topological transition from the three-valley electron spectrum to the single-valley electron spectrum occurs in the Bi_0.93Sb_0.07 single crystals for H∥C ₂ at low temperatures in the range of magnetic fields of the quantum limit.     

Nonlinear optical absorption and optical rectification in near-surface double quantum wells: combined effects of electric, magnetic fields and hydrostatic pressure

The theoretical study of the combined effects of electric and magnetic fields and hydrostatic pressure on the nonlinear optical absorption and rectification is presented for electrons confined within an asymmetrical GaAs?Ga_1-x Alx As double quantum well. The effective mass, parabolic band, and envelope function approaches are used as tools for the investigation. The electric field is taken to be oriented along the growth direction of the heterostructure and the magnetic field is applied parallel to the interfaces of the quantum wells. The pressure-induced mixing between the two lowest conduction bands is considered both in the low and high pressure regimes. According to the results obtained it can be concluded that the nonlinear optical absorption and rectification coefficients depend in a non-trivial way on some internal and external parameters such as the size of the quantum wells, the direction of applied electric field, the magnitude of hydrostatic pressure, the stoichiometry of the wells and barriers, and the intensity of the applied magnetic field.     

A hydrogen atom in a superstrong magnetic field and the Zeldovich effect

We consider the problem of a hydrogen atom in a superstrong magnetic field, B? B _a =2.35×10⁹ G. The analytical formulas that describe the energy spectrum of this atom are derived for states with various quantum numbers n_ρ and m. A comparison with available calculations shows their high accuracy for B?B _a . We note that the derived formulas point to a manifestation of the Zeldovich effect, i.e., a rearrangement of the atomic spectrum under the influence of strong short-range Coulomb potential distortion. We discuss the relativistic corrections to level energies, which increase in importance with magnetic field and become significant for B?10¹⁴ G. We suggest the parameters in terms of which the Zeldovich effect has the simplest form. Analysis of our precision numerical calculations of the energy spectrum for a hydrogen atom in a constant magnetic field indicates that the Zeldovich effect is observed in the spectrum of atomic levels for superstrong fields, B?5×10¹¹ G. Magnetic fields of such strength exist in neutron stars and, possibly, in magnetic white dwarfs. We set lower limits for the fields B_min required for the manifestation of this effect. We discuss some of the properties of atomic states in a superstrong magnetic field, including their mean radii and quadrupole moments. We calculated the probabilities of electric dipole transitions between odd atomic levels and a deep ground level.     

Perturbative approach to the hydrogen atom in a strong magnetic field

We consider states of the hydrogen atom with the principal quantum number n≤3 and zero magnetic quantum number in a constant homogeneous magnetic field ?. The perturbation theory series is summed using the Borel transformation and conformal mapping of the Borel variable. Convergence of the approximate energy eigenvalues and their agreement with the corresponding existing results are observed for external fields up to n³?/?₀～5, where ?₀ is the atomic magnetic field. The possibility of restoring the asymptotic behavior of energy levels using perturbation theory coefficients is also discussed.     

Effects of applied electric and magnetic fields on the nonlinear optical rectification and second-harmonic generation in a graded quantum well under intense laser field

In this present study, the effects of electric and magnetic fields on the nonlinear optical rectification and second-harmonic generation in a graded quantum well under intense laser field have been investigated theoretically. The energy eigenvalues and their corresponding eigenfunctions are obtained by solving Schrödinger equation within the framework of effective mass approximation. The analytic expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. The numerical results are presented for a typical GaAs/Ga_1?x Al _x As quantum well. The results show that the nonlinear optical rectification and second-harmonic generation coefficients are considerably affected by the electromagnetic fields and intense laser field.     

Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field

In this work the effects of intense laser on the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga_1−xAl_xAs quantum wells are studied under, applied electric and magnetic field. The electric field is applied along the growth direction of the quantum well whereas the magnetic field has been considered to be in-plane. The calculations were performed within the density matrix formalism with the use of the effective mass and parabolic band approximations. The intense laser effects are included through the Floquet method, by modifying the confining potential associated to the heterostructure. Results are presented for the nonlinear optical absorption, the nonlinear optical rectification and the resonant peak of these two optical processes. Several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation have been considered. The outcome of the calculation suggests that the nonlinear optical absorption and optical rectification are non-monotonic functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

The magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity,magnetic and electric fields

The magnetization and the magnetic susceptibility quantities of a single electron moving in a two-dimensional (2D) parabolic quantum dot are studied under the influence of external uniform electric and magnetic fields, in the presence of a donor impurity. The Hamiltonian was solved using shifted 1/N expansion method within the effective mass approximation. The results have been displayed as a function of physical parameters: confinement strength ω₀, magnetic field strength ω_c, temperature T and electric field strength F.     

Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields

In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs–Ga_1?xAl_xAs quantum wells under applied electric and magnetic fields. The calculated quantities include linear optical absorption coefficient and relative change of the refractive index, as well as their corresponding third-order nonlinear corrections. The nonlinear optical rectification and the second and third harmonic generation coefficients are also reported. The DC applied electric field is oriented along the hererostructure growth direction whereas the magnetic field is taken in-plane. The calculations make use of the density matrix formalism to express the different orders of the dielectric susceptibility. Additionally, the model includes the effective mass and parabolic band approximations. The intense laser effects upon the system enter through the Floquet method that modifies the confinement potential associated to the heterostructure. The results correspond to several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation. They suggest that the nonlinear optical absorption and optical rectification are nonmonotone functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

Theoretical study of the effective electron mass in ternary chalcopyrite semiconductors in the presence of crossed electric and magnetic fields

An attempt is made to investigate theoretically the effective electron mass in ternary chalcopyrite semiconductors at low temperatures on the basis of a newly derived dispersion relation of the conduction electrons under cross fields for the more generalized case which occurs from the consideration of the various types of anisotropies in the energy spectrum. It is found, taking degeneraten-CdGeAs₂ as an example, that the effective electron mass at the Fermi level along the direction of magnetic quantization depends on both the Fermi energy and the magnetic quantum number due to the combined influence of the crystal field splitting parameter and the anisotropic spin-orbit splitting parameter respectively, resulting in different effective masses at the Fermi level corresponding to different magnetic sub-bands. It is also observed that the same mass at the Fermi level in the direction normal to both magnetic and electric fields also varies both with Fermi energy and magnetic sub-band index, and the characteristic feature of cross-fields is to introduce the index-dependent oscillatory mass anisotropy. The theoretical results are in good agreement with the experimental observations as reported elsewhere.     

Influence of Electric and Magnetic Fields on the Polaron in a Quantum Well

A combinative method of variational wavefunction and harmonic oscillator operator algebra, the ground-state energy correction to an electron confined in the quantum well of GaAs/Ga_1-xAl_x, As in the electric and magnetic fields along the growth axis has been studied by taking into account the interaction of different optical phonon modes with the electron. The ground-state energy is obtained as a function of the well width and the strength of electric and magnetic fields. The results show that the magnetic field greatly enhances the in terface-phonon part of the polaronic correction to electron ground-state energy in the well width d ≤ 300 Å. The electric field also enhances the polaron effect of interface mode, but decreases the part of bulk longitudinal mode.     

Electric field induced nonlinear optical properties of a confined exciton in a ZnO/Zn1−xMgxO strained quantum dot

Electric field induced exciton binding energy as a function of dot radius in a ZnO/Zn_1−xMg_xO quantum dot is investigated. The interband emission as a function of dot radius is obtained in the presence of electric field strength. The Stark effect on the exciton as a function of the dot radius is discussed. The effects of strain, including the hydrostatic and the biaxial strain and the internal electric field, induced by spontaneous and piezoelectric polarization are taken into consideration in all the calculations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Some nonlinear optical properties are investigated for various electric field strengths in a ZnO/Zn_1−xMg_xO quantum dot taking into account the strain-induced piezoelectric effects. Our results show that the nonlinear optical properties strongly depend on the effects of electric field strength and the geometrical confinement.     

Photoelectron injection at metal-semiconductor interfaces

A modelling of the photoinjection process is developed which permits fitting of the spectral photoresponse of Schottky barriers including the electric field dependence of barrier height and photoresponse by means of two adjustable parameters: the zero field barrier qφ_BO and λ₀ the zero temperature mean free path for optical phonon scattering of high energy electrons. The model assumes an image force potential barrier with Thomas-Fermi screening in the metal. Effects of optical phonon scattering and quantum mechanical transmission are convoluted on the Fowler photoelectron supply function. The effects of phonon scattering are frequently large because the ranges in energies associated with the transverse momentum and normal momentum are approximately the amount by which the quantum energy hv exceeds the barrier energy qφ_B. At high fields, quantum mechanical tunneling dominates the response when hv < qφ_B. At low fields, phonon assisted transmission is appreciable for the same quantum energy range. The calculation of the collection probability includes effects of multiple scattering even for electrons that do not lie initially within the cone of acceptance at the barrier maximum. An approach that considers the probability of collection the same as that of reaching the potential maximum without scattering is found to be acceptable only at high fields. Experimental results are reported from oxide-passivated epitaxial Pt_xSi-〈111〉 n-type Si Schottky barrier diodes with annular Schottky barrier guard rings measured at temperatures of 90 and 298 K for an electric field range from 5 × 10³ to 9 × 10⁴$\text{V}\text{cm}$. The field, spectral and temperature dependences of the photoresponse data are in excellent agreement with theoretical predictions with λ₀ = 110 Å at both 90 and 298 K. The zero field barrier height obtained from fitting photoresponse curves at a number of electric fields is also in excellent agreement with I-V and C-V measurements.     

The hydrostatic pressure and temperature effects on donor impurities in GaAs/Ga1 − xAlxAs double quantum well under the external fields

The combined effects of hydrostatic pressure and temperature on donor impurity binding energy in GaAs/Ga_0.7Al_0.3As double quantum well in the presence of the electric and magnetic fields which are applied along the growth direction have been studied by using a variational technique within the effective-mass approximation. The results show that an increment in temperature results in a decrement in donor impurity binding energy while an increment in the pressure for the same temperature enhances the binding energy and the pressure effects on donor binding energy are lower than those due to the magnetic field.     

Magnetoelectric effect in perovskite quantum paraelectric EuTiO3

On the basis of successful theoretical explanation of the observed large magnetic-field effect (by ∼7% with 1.5 T) on the dielectric constant below the Néel temperature T_N of 5.5 K, we have demonstrated convincingly the magnetoelectric effect in an antiferromagnetic quantum paraelectric EuTiO₃ system. The mutual control of electric and magnetic properties is revealed by the variation of the electric-field-induced polarization with applied magnetic fields as well as the change of the magnetic-field-induced spin moments under the control of electric fields. It is found that the applied electric field (magnetic field) acts like a fictitious magnetic field (electric field) on the EuTiO₃ system. The magnetoelectric susceptibility is deduced to be proportional to the product of the magnetization, electrical polarization, magnetic susceptibility and dielectric susceptibility.     

Screening effect on the binding energies of shallow donors,acceptors and excitons in finite-barrier quantum wells

The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge–Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga_1−xAl_xAs quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ϵ (r) on the calculation of binding energies are specifically investigated. The use of ϵ (r) in comparison with the use of a constant ϵ₀increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small.