Temperature dependence of a nanoporous Pd film hydrogen sensor based on an AAO template on Si

In this study, hydrogen sensing properties of nanoporous Pd films based on Anodic Aluminium Oxide (AAO) templates grown on a silicon substrate have been investigated at various temperatures (25–100°C) and hydrogen concentrations (100–1000 ppm) to determine the temperature-sensitivity relationship. For this purpose, a hexagonally shaped AAO template of approximately 50 nm in diameter and 700 nm in length with 80 nm interpore distances was fabricated using two-step anodization of an Al film deposited on an n-type (100) oriented oxidized Si substrate. Then, the nanoporous surface of the AAO template was used as a substrate for supporting a nanoporous Pd film of an approximately thickness of 60 nm. The morphologies of the AAO template and Pd film coated on the AAO template were studied mainly by Scanning Electron Microscopy (SEM). Hydrogen sensing properties of the nanoporous Pd film were measured using a resistance transient method. It was found that the sensor response of the nanoporous Pd films on the AAO template was better than the traditional Pd thin film sensors, the sensitivity of the sensor was approximately 1.8% for 1000 ppm H₂, and the detection limit was lower than 100 ppm at room temperature. The highest sensitivity was measured at room temperature.     

Hydrogen sensitive gas sensor based on porous silicon/TiO2−x structure

Porous silicon (PS) layer was formed by electrochemical anodization on a p-type Si surface. Thereafter, n-type TiO_2−x thin film was deposited onto the PS surface by electron-beam evaporation. Pt catalytic layer and Au electrical contacts for further measurements were deposited onto the PS/TiO_2−x structure by ion-beam sputtering. Current–voltage characteristic, sensitivity to different concentration of hydrogen and resistance change of obtained structures versus time were examined. Results of measurements have shown that the current–voltage characteristics of structures are similar to that of diode. High sensitivity to hydrogen of obtained structures was also detected. Note that all measurements were carried out at room temperature.     

Quantitative infrared study of ultrathin MIS structures by grazing internal reflection

A very sensitive reflection technique well suited for infrared investigations of thin MIS structures is introduced. With this technique a nearly saturating reflectance drop from the Si-O vibration of a 1.3 nm oxide on silicon within a MIS structure was measured at 1240 cm^–1. The analytic discussion of the sensitivity amplification of this technique shows that for silicon oxide a sensitivity amplification by a factor of 600 per reflection is feasible over the sensitivity of a transmission measurement. The analytic discussion is verified experimentally for the case of 12 nm silicon nitride film. A method that allows one to determine bond concentrations of thin films within MIS structures is given and tested for the case of hydrogen bonds in silicon nitride.     

A new form of the Sutton–Chen potential for the Cu–Ag alloys

The analytic construction of a many-body potential inspired from the Sutton–Chen parametrization is presented for copper and silver. A new approach is used to model the cross interaction for the Cu–Ag alloys. The parameters are fitted to first principles calculations based on the full potential linear plane wave method. The structural properties of the order and disorder Cu–Ag alloys in the B₂and fcc structures are presented for different concentration.     

Long-Period Structures in Noble-Metal Alloys: New Aspects

Proceeding from precise calculation of the electronic structure and the generalized electronic susceptibility, a systematic study of the relationship between the nesting properties of the Fermi surface (FS) and the character of long-period ordered superstructures (LPSs) in noble-metal alloys, Cu–Au, Cu–Pd, and Ag–Mg, is performed. An answer is provided as to why in Cu–Au, Cu–Pd, and Cu–Pt alloys so-called incommensurate LPSs, characterized by an irrational period and smeared antiphase boundaries, are formed. The reasons for occurrence of such LPSs within a short temperature range only are clarified. The dependence of the long period M on the long-range order parameter in Cu–Au alloys is accounted for. The causes for formation of two-dimensional LPSs in Au₃Cu and Cu₃Pd alloys are found. It is shown that their stability may be explained for by energy gaps opening on coinciding patches of FS in two mutually perpendicular directions. Arguments are drawn in favor of the fact that among quasicrystalline substances, phases with incommensurate LPSs occupy an intermediate position between incommensurate systems and quasicrystals. An attempt is made to identify the reasons for qualitatively different behavior of LPSs with large and small superperiods. It is shown that the dependence of LPS's behavior on the value of 2M is controlled by the quality of nesting on FS and the nesting vector sensitivity (2k _F) to variations in the long-range order parameter .     

Layered copper oxides designed by the combination of Pb compound and fluorite blocking layers

According to the principles proposed for the design of possible new superconductors, we have synthesized two kinds of copper oxides which consist of Pb based layers and fluorite Ln₂O₂ layers as blocking layers. One consists of SrO/PbO–Cu–PbO/SrO and Ln₂O₂ as blocking layers inserted by Cu–O₂ sheets. The other consists of SrO/(Pb, Cu)O/SrO and Ln₂O₂ as blocking layers inserted by Cu–O₂ sheets. These copper oxides have common characteristics for the candidates of a high temperature superconductor.     

Doping properties of microcrystalline silicon prepared by mercury sensitized photochemical vapor deposition

Conductivity of photo-CVD microcrystalline silicon (c-Si:H) in wide range of dopant gas concentration (10^–53/SiH₄, B₂H₆/SiH₄<10^–2) is investigated. As compared with a-Si:H, the conductivity of the film is improved more than two orders of magnitude by microcrystallization for a wide range of dopant concentration at a deposition temperature of as low as 150°C. This indicates the suitability of photo-CVD for low temperature processing. A conductivity minimum is found at a doping ratio of about B₂H₆/SiH₄=1×10^–5.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Electrical properties of metal-vanadium-borate glass-gallium arsenide structures

The results of a study of the electrical properties of MIS structures based on n-type GaAs are presented. The static current-voltage characteristics and the dependences of the capacitance and active conductance on the voltage on the MIS structure in the frequency range of the test signal from 22 to 10⁵ Hz at room temperature and in the temperature range 295–367 K at a frequency of 10³ Hz are analyzed in detail. A method is proposed for determining the total density of surface states N_ts, which determine the position of the Fermi energy on the semiconductor surface for MIS structures with large N_ts.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshykh Uchebnykh Zavedenii, Fizika, No. 11, pp. 99–108, November, 1992.     

Photoconductivity and dark conductivity of hydrogenated amorphous silicon

The study of plasma-deposited hydrogenated amorphous silicon films prepared in various deposition systems and under the use of different gases (SiH₄, SiD₄, Si₂H₄) shows a unique correlation between the photoconductivity and the dark conductivity of undoped and lightly doped films grown under optimized conditions. Deviations from his relation occur at high doping levels, in particular for boron doping, as well as upon annealing. They are attributed to an increased density of gap states due to hydrogen depletion.     

Functionalized Pd/ZnO Nanowires for Nanosensors

A method for surface doping and functionalization of ZnO nanowires (NWs) with Pd (Pd/ZnO) in a one‐step process is presented. The main advantage of this method is to combine the simultaneous growth, surface doping, and functionalization of NWs by using electrochemical deposition (ECD) at relatively low temperatures (90 °C). Our approach essentially reduces the number of technological steps of nanomaterial synthesis and final nanodevices fabrication with enhanced performances. A series of nanosensor devices is fabricated based on single Pd/ZnO NWs with a radius of about 80 nm using a FIB/SEM system. The influence of Pd nominal composition in Pd/ZnO NW on the H₂ sensing response is studied in detail and a corresponding mechanism is proposed. The results demonstrate an ultra‐high response and selectivity of the synthesized nanosensors to hydrogen gas at room temperature. The optimal concentration of PdCl₂ in the electrolyte to achieve extremely sensitive nanodevices with a gas response (S_H2) ≈ 1.3 × 10⁴ (at 100 ppm H₂ concentration) and relatively high rapidity is 0.75 µM. Theoretical calculations on Pd/ZnO bulk and functionalized surface further validated the experimental hypothesis. Our results demonstrate the importance of noble metal presence on the surface due to doping and functionalization of nanostructures in the fabrication of highly‐sensitive and selective gas nanosensors operating at room temperature with reduced power consumption.     

Geometries,stabilities and electronic properties of small-sized Pd2-doped Sin (n = 1–11) clusters

The geometries, growth patterns, relative stabilities and electronic properties of small-sized Pd₂Si_n and Si_n+2 (n = 1–11) clusters are systematically studied using the hybrid density functional theory method B3LYP. The optimised structures revealed that the lowest energy Pd₂Si_n clusters are not similar to those of pure Si_n clusters. When n = 9, one Pd atom in Pd₂Si₉ completely falls into the centre of the Si outer frame, forming metal-encapsulated Si cages. On the basis of the optimised structures, the averaged binding energy, fragmentation energy, second-order energy difference and highest occupied–lowest unoccupied molecular orbital energy gap are calculated. It is found that the Pd₂Si₅ and Pd₂Si₇ clusters have stronger relative stabilities among the Pd₂Si_n clusters. Additionally, the stabilities of Si_n+2 clusters have been reduced by the doping of Pd impurity. The natural population and natural electronic configuration analysis indicated that the Pd atoms possess negative charges for n = 1–11 and there exist the spd hybridisation in the Pd atom. Finally, the chemical hardness, chemical potential, electrostatic potential and polarisability are discussed.     

Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

The impact of hydrogen desorption on the electrical properties of TiO_x on crystalline silicon (c-Si) with SiO_y interlayers is studied for the development of high-performance TiO_x carrier-selective contacts. Compared with the TiO_x/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm² are obtained by using SiO_y interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiO_x interlayers is lower than that of heterocontacts without a SiO_y interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiO_x/c-Si and TiO_x/SC2-SiO_y/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiO_x/SC2-SiO_y/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.     

The influence of boron concentrations on structural properties in disorder silicon films

In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (μc-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike μc-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In μc-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in μc-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both μc-Si:H and poly-Si films leads to a change in hydrogen bonding configuration.     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

High sensitivity of palladium on porous silicon MSM photodetector

In this work, the nanocrystalline porous silicon (PS) is prepared through the simple electrochemical etching of n-type Si (1 0 0) under the illumination of a 100 W incandescent white light. SEM, AFM, Raman and PL have been used to characterize the morphological and optical properties of the PS. SEM shows uniformed circular pores with estimated sizes, which range between 100 and 500 nm. AFM shows an increase in its surface roughness (about 6 times compared to c-Si). Raman spectra of the PS show a stronger peak with FWHM=4.3 cm⁻¹ and slight blueshift of 0.5 cm⁻¹ compared to Si. The room temperature photoluminescence (PL) peak corresponding to red emission is observed at 639.5 nm, which is due to the nano-scaled size of silicon through the quantum confinement effect. The size of the Si nanostructures is estimated to be around 7.8 nm from a quantized state effective mass theory. Thermally untreated palladium (Pd) finger contact was deposited on the PS to form MSM photodetector. Pd/PS MSM photodetector shows lower dark (two orders of magnitude) and higher photocurrent compared to a conventional Si device. Interestingly, Pd/PS MSM photodetector exhibits 158 times higher gain compared to the conventional Si device at 2.5 V.     

Scanning probe oxidation of Si3N4 masks for nanoscale lithography,micromachining, and selective epitaxial growth on silicon

For studying the physical, chemical, and electronic properties of ultrasmall man-made structures, the major challenge is to fabricate highly uniform structures and control their positions on the nanometer length scale. Local oxidation of metals and semiconductors using a conductive-probe atomic force microscope (AFM) or other scanning probe microscopes in air at room temperature has emerged as a simple and universal method for this purpose. Here the uses of scanning probe oxidation of Si₃N₄ masks for performing nanolithography, nanomachining, and nanoscale epitaxial growth on silicon are reviewed. The three most unique features of this approach are presented: (1) exceptionally fast oxidation kinetics using silicon nitride masks (∼30 μm/s at 10 V for a ∼5-nm-thick film); (2) selective-area anisotropic etching of Si using a Si₃N₄ etch mask; and (3) selective-area chemical vapor deposition of Si using a SiO₂/Si₃N₄ bilayer growth mask.     

Palladium clusters in nanoporous carbon samples: Magnetic properties

The magnetic properties of nanoporous carbon samples were studied. The samples were prepared from silicon and boron carbides and contained palladium clusters incorporated into pores. Electron spin resonance (ESR) studies over a wide temperature range (3–100 K) showed that the palladium clusters have a significant effect on the electrical and magnetic characteristics of composite samples. In particular, the ESR spectrum of samples with palladium has a narrow line whose intensity varies with temperature following the Curie law, which indicates the formation of an ensemble of localized spins. Therefore, the hole conductivity of the carbon skeleton is partially compensated. The ESR spectra of C(SiC): Pd have a ferromagnetic resonance line, which suggests that some Pd clusters in pores are magnetically ordered. This line is absent in C(B₄C)B: Pd samples. However, the small variation of the resonance frequencies with temperature indicates that the C(B₄C): Pd samples also contain small magnetic inclusions. Original Russian Text ? B.D. Shanina, A.M. Danishevskiĭ, A.I. Veynger, D.A. Kurdyukov, S.K. Gordeev, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 596–603.     

Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures

The Au/Pd/Ti-SiO₂-(n)GaAs structures with and without (NH₄)₂S_x treated gallium arsenide surface, previously analysed by impedance spectroscopy (IS) method, have been investigated using charge transient spectroscopy (QTS) technique. The isothermal QTS spectra of MIS structures kept at room temperature under set of quiescent biases have been recorded in response to both negative and positive pulses of fixed small amplitudes. Two types of charge relaxation characterized by time constant values have been evidenced. The attempt to compare QTS results with ones obtained by impedance spectroscopy method has been presented.