Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units

A new polymer, poly[{9,9-di(triphenylamine)fluorene}(9,9-dihexylfluorene)(4-aminophenylcarbazole)] (PFCz) was synthesized and used in a reaction with graphene oxide (GO) containing surface-bonded acyl chloride moieties to give a soluble GO-based polymer material GO-PFCz. A bistable electrical switching effect was observed in an electronic device in which the GO-PFCz film was sandwiched between indium-tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 10(8) read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. The mechanism associated with the memory effects was elucidated from molecular simulation results and in-situ photoluminescence spectra of the GO-PFCz film under different electrical biases.     

Push–Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memory

A solution‐processable PFTPA‐convalently grafted reduced graphene oxide (RGO‐PFTPA) was synthesized by the 1,3‐dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/RGO‐PFTPA/Al. The switch‐on voltage of the as‐fabricated device was around ?1.4 V, and the ON/OFF‐state current ratio was more than 10³. The ON–OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of ?1 V for up to 3 h, or under a pulse voltage stress of ?1 V for up to 10⁸ continuous read cycles (pulse period = 2 μs, pulse width = 1 μs). © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Synthesis of polyimides containing triphenylamine‐substituted triazole moieties for polymer memory applications

A series of thermally stable aromatic polyimides containing triphenylamine‐substituted triazole moieties ( AZTA‐PI )s were prepared and characterized. The glass transition temperatures (T_g) of the polyimides were found to be in the range of 262–314 °C. The polyimides obtained by chemical imidization had inherent viscosities of 0.25–0.44 dL g^?1 in N‐methyl‐2‐pyrrolidinone. The number average molecular weights (M_n) and weight average molecular weights (M_w) were 1.9–3.2 × 10⁴ and 3.2–5.6 × 10⁴, respectively, and the polydispersity indices (PDI = M_w/M_n) were in the range of 1.70–1.78. A resistive switching device was constructed from the 4,4′‐hexafluoroisopropylidenediphthalic dianhydride‐based soluble polyimide ( AZTA‐PIa ) in a sandwich structure of indium‐tin oxide/polymer/Al. The as‐fabricated device can be switched from the initial low‐conductivity (OFF) state to the high‐conductivity (ON) state at a switching threshold voltage of 2.5 V under either positive or negative electrical sweep, with an ON/OFF state current ratio in the order of 10⁵ at ?1 V. The device is able to remain in the ON state even after turning off the power or under a reverse bias. The nonvolatile and nonrewritable natures of the ON state indicate that the device is a write‐once read‐many times (WORM) memory. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

Different Steric‐Twist‐Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8‐Naphthalimide Moieties

Herein, novel random copolymers PMNN and PMNB were designed and synthesized, and the memory devices Al/ PMNN and PMNB /ITO both exhibited ternary memory performance. The switching voltages of the OFF–ON1 and ON1–ON2 transitions for both memory devices are around −2.0 and −3.5 V, respectively, and the ON1/OFF, ON2/ON1 current ratios are both up to 10³. The observed tristable electrical conductivity switching could be attributed to field‐induced conformational ordering of the naphthalene rings in the side chains, and subsequent charge trapping by 1,8‐naphthalimide moieties. More interestingly, by adjusting the connection sites of 1,8‐naphthalimide moieties to tune the steric‐twist effect, different memory properties were achieved ( PMNN showed nonvolatile write once, read many (WORM) memory behavior, whereas PMNB showed volatile static RAM (SRAM) memory behavior). This result will offer a guideline for the design of different high‐performance multilevel memory devices by tuning the steric effects of the chemical moieties.     

Dynamic Random Access Memory Effect and Memory Device Derived from a Functional Polyimide Containing Electron Donor‐Acceptor Pairs in the Main Chain

A functional polyimide, hexafluoroisopropyl bis(phthalic dianhydride)/3,6‐diaminocarbazole (6FDA/DAC), in which DAC serves as electron donor and 6FDA as electron acceptor, has been synthesized in our present work. Electrical characterization results on the sandwiched polyimide memory device (ITO/Thin polyimide Layer/Au) indicate that the polyimide possesses electrical bistability and the device exhibits two accessible conductivity states, which can be reversibly switched from the low‐conductivity (OFF) state to the high‐conductivity (ON) state with an ON/OFF current ratio of about 10⁴. Different from the widely reported write‐once‐read‐many‐times (WORM) effects, the device with the 6FDA/DAC polyimide as the active layer shows dynamic random access memory (DRAM) behavior. The ON state of the device was lost immediately after removal of the applied voltage, while by applying a constant bias (e.g., 3 V) the ON state can be electrically sustained. The roles of donor and acceptor components in the polyimide main chain were elucidated through molecular simulation.

     

Growing poly(N‐vinylcarbazole) from the surface of graphene oxide via RAFT polymerization

A new approach on usage of S‐1‐dodecyl‐S′‐(α,α′‐dimethyl‐α″‐acetic acid)trithiocarbonate (DDAT)‐covalently functionalized graphene oxide (GO) as reversible addition fragmentation chain transfer (RAFT) agent for growing of poly(N‐vinylcarbazole) (PVK) directly from the surface of GO was described. The PVK polymer covalently grafted onto GO has M_n of 8.05 × 10³, and a polydispersity of 1.43. The resulting material PVK‐GO shows a good solubility in organic solvents when compared to GO, and a significant energy bandgap of ～2.49 eV. Bistable electrical switching and nonvolatile rewritable memory effect, with a turn‐on voltage of about ?1.7 V and an ON/OFF state current ratio in excess of 10³, are demonstrated in the Al/PVK‐GO/ITO structure. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Covalent Functionalization of Black Phosphorus with Conjugated Polymer for Information Storage

Major disadvantages of black phosphorus (BP) are its poor air‐stability and poor solubility in common organic solvents. The best way to solve this problem is to incorporate BP into a polymer backbone or a polymer matrix to form novel functional materials that can provide both challenges and opportunities for new innovation in optoelectronic and photonic applications. As a proof‐of concept application, we synthesized in situ the first highly soluble conjugated polymer‐covalently functionalized BP derivative (PDDF‐g‐BP) which was used to fabricate a resistive random access memory (RRAM) device with a configuration of Au/PDDF‐g‐BP/ITO. In contrast to PDDF without memory effect, PDDF‐g‐BP‐based device exhibits a nonvolatile rewritable memory performance, with a turn‐on and turn‐off voltages of +1.95 V and ?2.34 V, and an ON/OFF current ratio of 10⁴. The current through the device in both the ON and OFF states is still kept unchanged even at 200th switching cycle. The PDDF/BP blends show a very unstable memory performance with a very small ON/OFF current ratio.     

Electrical bistability of organic devices with a polymeric thin film for nonvolatile data storage

In this study, organic memory devices with a single active layer between the two external electrodes were fabricated using an electron‐donor type conjugated polymer and an electron‐acceptor type small organic molecule. The active layer of the memory device was prepared by blending polystyrene, poly[10‐(2′‐ethylhexyl)phenothiazine‐3,7‐diyl], and tetracyanoquinodimethane in 1,2‐dichlorobenzene. The device initially showed a low‐conductance state (OFF state) in the low‐voltage range, and an abrupt current increase, corresponding to the transition to a high‐conductance state (ON state), occurred at a certain voltage (V_th). The ON state could be reverted to the OFF state by applying a voltage higher than V_th. The current ratio between the two states was about 10³ (up to 10⁵). After this transition, the device remained in the ON state even after the applied voltage was removed, and this indicated the nonvolatile characteristics of the device. There was no sharp current degradation in the OFF or ON states for 4500 s of continuous bias. The device‐to‐device performance fluctuation was measured, and the conduction mechanisms in the ON and OFF states were examined by fitting the data to well‐known theoretical models. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Novel high‐performance polymer memory devices containing (OMe)2tetraphenyl‐p‐phenylenediamine moieties

The functional polyimide (OMe)₂TPPA‐6FPI ( PI ) and the polyamide (OMe)₂TPPA‐6FPA ( PA ) consisting of electron‐donating N,N′‐bis(4‐aminophenyl)‐N,N′‐di(4‐methoxylphenyl)1,4‐phenylenediamine [(OMe)₂TPPA‐diamine] for memory application were prepared in this study. These polyimide and polyamide memory devices were fabricated with the sandwich configuration of indium tin oxide (ITO)/polymer/Al, and could be switched from the initial low‐conductivity (OFF) state to the high‐conductivity (ON) state with high ON/OFF current ratios of 10⁷ and 10⁹, respectively. PI exhibited dynamic random access memory (DRAM) performance, whereas PA showed static random access memory (SRAM) behavior. To get more insight into the memory behaviors of these two different types of polymer memory devices, molecular simulation on the basic unit was carried out. Furthermore, the differences of highest occupied molecular orbital (HOMO) energy level, lowest unoccupied molecular orbital (LUMO) charge density isosurfaces, dipole moment, and linkage conformation between PI and PA were found to affect the volatile memory behavior. Both polymer memory devices revealed excellent stability with long operation time of 10⁴ s at continuous applied voltage of ‐2 V. The effect of polymer thickness on the volatile memory behavior of PA was also investigated in this study. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices

A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on (V_Th1=2.0 V) and distinct threshold voltages (V_Th2=3.3 V), small reading bias (1.0 V), and long retention time (>10⁴ seconds) with a large ON/OFF ratio of each state (current ratio of “OFF”, “ON1”, and “ON2”=1:10³:10⁶) have been demonstrated, suggestive of its potential application in high‐density data storage. The present design strategy provides new insight in the future design of memory devices with multi‐level transition states.     

The steric effect of aromatic pendant groups and electrical bistability in π-stacked polymers for memory devices

In order to investigate the steric effect of aromatic pendant groups and the electrical bistability in nonconjugated polymers potentially for memory device applications, two π-stacked polymers with different steric structures are synthesized and characterized. They exhibit two conductivity states and can be switched from an initial low-conductivity (OFF) state to a high-conductivity (ON) state. Additionally, they demonstrate nonvolatile write-once-read-many-times (WORM) memory behavior with an ON/OFF current ratio up to 10(4), and flash memory behavior with an ON/OFF current ratio of approximately 10(5). Both steady-state and time-resolved fluorescence spectroscopies are used to examine the conformational change of the polymers responding to an applied external electrical voltage. The results provide useful information on different steric effects of pendant groups in polymer chains, resulting in various electrical behaviors. The possibility in realizing an "erasable" behavior through breaking π-stacked structures of pendant groups by a reversal of the electric field was also discussed on the basis of temperature-dependent fluorescence spectroscopy investigation. These results may thus offer a guideline for the design of practical polymer memory devices via tuning steric structure of π-stacked polymers.     

Fully transparent nonvolatile resistive polymer memory

We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene‐containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write‐once‐read‐many times (WORM) memory behavior with an ON/OFF current ratio of ～2 × 10³, and the ratio remained without any significant degradation for over 10⁴ s. The memory behavior of the device is considered to be governed by trap‐controlled space‐charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 918–925     

Synthesis and dynamic random access memory behavior of a functional polyimide

The device under testing was a plastic dynamic random access memory based on a donor-functionalized polyimide (TP6F-PI), which exhibited the ability to write, read, erase, and refresh the electrical states. The device had an ON/OFF current ratio up to 105, promising minimal misreading error. Both the on and off states were stable under a constant voltage stress of 1 V and survived up to 108 read cycles at 1 V.     

Polycyclic arene‐based D–A polyimide electrets for high‐performance n‐type organic field effect transistor memory devices

We report the memory characteristics of n‐type N,N′‐bis(2‐phenylethyl)‐perylene‐3,4:9,10‐tetracarboxylic diimide‐based organic field‐effect transistors (OFET) using a series of donor–acceptor (D–A) polyimide electrets of poly[4,4′‐diamino‐4″‐methyltriphenylamine‐hexafluoroisopropylidenediphthal imide] ( PI(AMTPA‐6FDA) ), poly[N,N‐bis‐(4‐aminophenyl)‐aminonaphthalene‐hexafluoroisopropylidenediphthalimide] ( PI(APAN‐6FDA) ), and poly[N,N‐bis‐(4‐aminophenyl)‐aminopyrene‐hexafluoroisopropylidenediphthalimide] ( PI(APAP‐6FDA) ). Among the polymer electrets, the OFET memory device based on PI(APAP‐6FDA) exhibits the largest memory window of 40.63 V and the best charge retention ability (maintained for over 10⁴ s with the ON/OFF current ratio about 10³) due to introducing polycyclic arene functionality of pyrene into the electron donating moiety. With the excellent carrier delocalization, pyrene successfully enhanced the charge storage ability and sustained the CT complex. Besides, PI(APAP‐6FDA)‐based OFET memory also performed well in the write‐read‐erase‐read tests for over 100 cycles. Our finding may provide a new approach for the preparation of high performance nonvolatile OFET memories with electrets of D–A polyimide systems. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 139–147     

Donor–Acceptor Oligoimides for Application in High‐Performance Electrical Memory Devices

Two new oligoimides, OI(APAP-6FDA) and OI(APAN-6FDA) , which consisted of electron‐donating N‐(4‐aminophenyl)‐N‐phenyl‐1‐aminopyrene ( APAP ) or N‐(4‐aminophenyl)‐N‐phenyl‐1‐aminonaphthalene ( APAN ) moieties and electron‐accepting 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride ( 6FDA ) moieties, were designed and synthesized for application in electrical memory devices. Such devices, with the indium tin oxide (ITO)/oligoimide/Al configuration, showed memory characteristics, from high‐conductance Ohmic current flow to negative differential resistance (NDR), with corresponding film thicknesses of 38 and 48 nm, respectively. The 48 nm oligoimide film device exhibited NDR electrical behavior, which resulted from the diffusion of Al atoms into the oligoimide layer. On further increasing the film thickness to 85 nm, the OI(APAP-6FDA) film device showed a reproducible nonvolatile “write once read many” (WORM) property with a high ON/OFF current ratio (more than ×10⁴). On the other hand, the device that was based on the 85 nm OI(APAN-6FDA) film exhibited a volatile static random access memory (SRAM) property. The longer conjugation length of the pyrene unit compared to that of a naphthalene unit was considered to be responsible for the different memory characteristics between these two oligoimides. These experimental results suggested that tunable switching behavior could be achieved through an appropriate design of the donor–acceptor oligoimide structure and controllable thickness of the active memory layer.     

A Supramolecular Approach on Using Poly(fluorenylstyrene)‐block‐poly(2‐vinylpyridine):PCBM Composite Thin Films for Non‐Volatile Memory Device Applications

Supramolecular composite thin films of poly[4‐(9,9‐dihexylfloren‐2‐yl)styrene]‐block ‐poly(2‐vinylpyridine) (P(St‐Fl)‐b‐P2VP):[6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) were prepared for write‐once‐read‐many times (WORM) non‐volatile memory devices. The optical absorption and photoluminescence results indicated the formation of charge transfer complexation between the P2VP block and PCBM, which led to the varied PCBM aggregated size and memory characteristics. The ITO/PCBM:(P(St‐Fl)‐b‐P2VP)/Al device exhibited the WORM characteristic with low threshold voltage (−1.6 to −3.2 V) and high ON/OFF ratio (10³ to 10⁵) by tuning the PCBM content. The switching behavior could be explained by the charge injection dominated thermionic emission in the OFF state and field‐induced charge transfer in the ON state. The present study provides a novel approach system for tuning polymer memory device characteristics through the supramolecular materials approach.

     

A non‐volatile,bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

A non‐volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6‐tetramethylpiperidine‐1‐oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p‐dopable material, while the silver salt‐dispersed PMMA layer acted as an n‐dopable material. The ON–OFF ratio between low‐conductivity and high‐conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 10³ sec. The device was characterized by excellent rewritability. Copyright © 2007 John Wiley & Sons, Ltd.     

Synthesis and memory characteristics of highly organo‐soluble hyperbranched polyimides with various electron acceptors

A series of hyperbranched polyimides (HBPIs) were synthesized by reacting a triamine monomer N ,N ′,N ″‐tris(4‐methoxyphenyl)‐N ,N ′,N ″‐tris(4‐phenylamino)?1,3,5‐benzenetriamine with various dianhydrides such as oxydiphthalic dianhydride (ODPA), 3,3′,4,4′‐diphenylsulfonetetracarboxylic dianhydride (DSDA), 3,3′,4,4′‐benzophenonetetracarboxylic dianhydride (BTDA), and pyromellitic dianhydride (PMDA). The hyperbranched polyimide (6FHBPI) using 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) as dianhydride monomer was also added into the discussion. All the hyperbranched polyimides exhibited excellent organo‐solubility and high thermal stability. Memory devices with a sandwiched structure of indium tin oxide (ITO)/HBPI/Al were constructed by using these HBPIs as the active layers. All these HBPIs based memory devices exhibited favorable memory performances, with switching voltages between ?1.3 V and ?2.5 V, ON/OFF current ratios up to 10⁷ and retention times long to 10⁴ s. Tunable memory characteristics from electrical insulator to volatile memory, and then to nonvolatile memory were obtained by adjusting the electron acceptors of these HBPIs. Molecular simulation results suggested that the electron affinity and the dipole moment of these HBPIs were responsible for the conversion of the memory characteristics. With the electron affinity and dipole moment of these HBPIs increasing, the memory characteristics turned from volatile to nonvolatile. The present study suggested that tunable memory performance could be achieved through adjusting the acceptor moieties of the hyperbranched polyimides. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55 , 2281–2288     

Cu12Sb4S13量子点的光照增强阻变性能

采用热注入法制备了粒径为7.9 nm的Cu₁₂Sb₄S₁₃量子点（CAS QDs）,并利用旋涂法在室温下制备了结构为FTO/CAS QDs/Au（其中FTO为导电玻璃）的阻变存储器（RRAM）.在光照条件下,该三明治结构的RRAM呈现典型的双极性阻变开关特征,具有-0.38 V/0.42 V的低工作电压和10⁵的高阻变开关比,并表现出优异的数据保持性和耐久性.在持续工作1.4×10⁶ s和经过10⁴次快速读取后,器件阻变性能变化率小于0.1%.在光照和电场共同作用下,S^2-导电通道的形成与破坏和FTO/CAS QDs界面肖特基势垒高度的调制是FTO/CAS QDs/Au在高阻态与低阻态之间转变的原因.     

Synthesis,characterization, and hoping transport properties of HCl doped conducting biopolymer‐co‐polyaniline zwitterion hybrids

A series of electrically conductive zwitterion hybrid materials were facilely synthesized with anionic acacia gum (AG) and cationic HCl doped polyaniline (PANI) through radical copolymerization method. A representative acacia gum‐polyaniline hybrid (AG‐PANI) was characterized using UV‐vis, FTIR, ¹H NMR, and SEM. HCl doped AG‐PANI possesses zwitterion character due to the presence of NH on PANI and ? COO^? of AG. The cyclic voltammogram of AG‐PANI showed three anodic peaks at 0.20 V, 0.58 V, and 0.64 V along with two cathodic peaks at 0.50 V and 0.40 V with large capacitive background currents. AG‐PANI exhibited electrical conductivity that was found dependent on the ratio of aniline to AG, temperature, and pH. Its electrical conductivity versus temperature plot indicated Mott's nearest‐neighbor hopping mechanism at the temperature range 83–323 K. The hybridization of AG and PANI yielded eco‐friendly advanced functional materials for technological applications. Copyright © 2008 John Wiley & Sons, Ltd.