Secondary electron emission of sputtered alumina films

Secondary electron emission yieldδ was measured for thin films of alumina prepared byrf sputtering technique. Single pulse method was used along with 4-gridleed optics system to determineδ. Maximum value of 4·3 was obtained at primary energy of 350 eV. The Dionne’s theory was used to analyse the results and the emission probability escape depth and absorption coefficient of secondaries were also estimated. Fairly good correlation is observed between experimental and theoretical values ofδ for beam energies upto 1 keV.     

ac anddc electroluminescence in CaS:Cu,Sm phosphors

Theac anddc electroluminescence in CaS:Cu, Sm have been investigated. The luminescence spectra show three peaks in the visible region. The brightness-voltage dependence satisfies the relationB=B ₀ exp (−b/V ^1/2) with two modes of variation. The nature of this dependence indc andac at different frequencies is discussed. The electroluminescence brightness also depends on the temperature of the phosphors and shows a peak around 80.0;C. The electroluminescence efficiency increases with applied voltage up to 2200 V and this dependence on V is explained on the basis of a transport process of the Schottky emission type.     

Crystal structure and tribological properties of molybdenum disulfide films prepared by magnetron sputtering technology

Molybdenum disulfide (MoS₂) is widely used in practice due to its excellent lubricating properties. However, research on the tribological properties of magnetron sputtering for depositing MoS₂ films remains limited. Herein, the tribological properties of MoS₂ films were investigated in detail through a series of characterization and friction coefficient tests. MoS₂ films were deposited onto silicon substrates by magnetron sputtering under different radio-frequency powers (P_rf). With increased P_rf, the crystallinity of the films gradually increases, whereas the friction coefficient initially decreases and then increases. P_rf also affects the chemical composition, surface morphology, and grain size of MoS₂ films. At P_rf = 300 W, the film surface is dense and smooth, the grain distribution is uniform. Moreover, the films have superior tribological properties and low friction coefficient, which can be attributed to the weak van der Waals force among MoS₂ layers and the microscopic morphology of the films. All these results indicate that by reasonably controlling the preparation parameters, MoS₂ films with excellent tribological properties can be prepared by magnetron sputtering.     

Amorphous germanium III. Optical properties

The optical properties of thick sputtered films (～30μ) of amorphous Ge, grown with different substrate temperatures (0ˇ-T _sˇ-350°C), were obtained between 0·05 and 4·5 eV by a combination of reflectance, transmittance and ellipsometric measurements. The refractive index at 0·15 eV decreases monotonically with increasing T _s, or equivalently, with increasing density, and is 4·13±0·05 eV in the highest density films. The absorption edge is approximately exponential (10²?α?10⁴ cm^?1) but shifts monotonically to higher energy and increases in slope with increasing T _s. Similarly, the peak in ε₂ grows by about 10% and shifts by about 0·15 eV to higher energies, reaching a maximum of about 23 at 2·90±0·05 eV in the high density films. The peak in the transition strength ω²ε₂ occurs at 4·2±0·2 eV in all films, but increases in magnitude with increasing T _s. The sum rules for n _eff(ω) and ε_0,eff(ω) are evaluated for ▄ω?5 eV and vary monotonically with T _s. These trends are neither compatible with Galeener's void resonance theory nor with changes in the oxygen content of the films, determined by the examination of absorption peaks at 0·053 eV and 0·09 eV. An explanation, suggested here and expanded in I, is based on the observed changes in the structure of the network and voids.     

Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties

In this paper, we investigate the role of grain boundaries in polycrystalline (Ba _x Sr_1–x )Ti_1+y O_3+z films, grown by metal organic vapor deposition, in the accommodation of nonstoichiometry, as well as their role in the strong composition dependence of the electric and dielectric behavior observed in these films. High-spatial resolution electron energy-loss spectroscopy is used for the analysis of composition and structural changes at grain boundaries, as a function of film composition. The existence of amorphous, titanium rich, TiO₂-like phases at the grain boundaries of films with large amounts of excess Ti (y 0.08) may explain the non-monotonic resistance degradation behavior of the films as a function of Ti content. However, we show that a grain boundary phase model fails to explain the strong composition dependence of the dielectric behavior. Electron energy-loss spectra indicate a distortion of the Ti–O octahedra in the grain interiors in samples with increasing Ti excess. The decrease of the dielectric constant with increasing amounts of excess Ti is therefore more likely due to Ti accommodation in the grain interiors.     

Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Bi0.5Ba0.5Fe0.5Ti0.49Nb0.01O3热敏陶瓷的微结构和电学性能研究

采用固相合成工艺,制备了Bi_05Ba_05Fe_05Ti_049Nb_001O₃（BBFTN）热敏陶瓷,借助X射线衍射仪、扫描电子显微镜、阻温测试仪和交流阻抗谱考察其微结构、直流电阻、介电特性、阻抗和电学模量方面的电学性能. 结果表明：BBFTN材料依然为立方钙钛矿结构,平均晶粒尺寸约为10 μm,晶格常数相对于BaTiO₃的晶格常数有所变大;室温电 关键词： 05Ba_05Fe_05Ti_049Nb_001O₃')" href="#">Bi_05Ba_05Fe_05Ti_049Nb_001O₃ 微结构 电学性能     

Synthesis and characterization of nanostructured (Pb1− x Sr x )TiO3 thin films by a modified chemical route

The coating solutions of nanostructured (Pb_{1– x} Sr _x )TiO₃ (PST) thin films have been prepared by the sol–gel combined metallo-organic decomposition method. The coating solutions were deposited on Pt/Ti/SiO₂/Si substrates using a spin-coating technique with spinning speed of 4300 rpm and annealed at 650°C. The effect of Sr content in reducing the grain size and tetragonal distortion of PST films has been studied. The optimum conditions for crystalline phase formation in the films have been analyzed by thermogravimetric, differential thermal analysis and Fourier transform infrared spectroscopy. The phase and microstructure of the films were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD pattern shows that the PST thin films are crystallized into tetragonal structures without any impurity phase and the distortion ratio reduces with increasing Sr concentration. The AFM results indicate an increase in grain size with increasing annealing temperature of the film and reduction in grain size with increasing Sr concentration.     

Harmonic generation studies in laser ablated YBCO thin film grown on 〈100〉 MgO

The generation of harmonics in a laser ablated YBCO film deposited on a 〈100〉 MgO substrate is reported. Higher odd harmonics appeared when the film was subjected to an ac field. The presence of a dc field induces only the second harmonic with a small value of slope ofV ₂−H _dc curve (δV ₂/δH _dc) compared to bulk YBCO. The variation of the amplitude of third harmonic (V ₃) withH _ac and temperature was studied. These results are explained in terms of a critical state model. The observation of only a small amplitude of second harmonic (V ₂) with a smallδV ₂/δH _dc is explained in terms of a special kind of clean grain boundary present in YBCO laser ablated films on 〈100〉 MgO.     

蓝宝石衬底上Gd2O3掺杂CeO2氧离子导体电解质薄膜的生长及电学性能

采用反应磁控溅射方法,在(0001)蓝宝石单晶衬底上,制备了纳米多晶Gd₂O₃掺杂CeO₂(GDC)氧离子导体电解质薄膜,采用X射线衍射仪(XRD)、原子力显微镜(AFM)对薄膜物相、结构、粗糙度、表面形貌等生长特性进行了表征,利用交流阻抗谱仪测试了GDC薄膜不同温度下的电学性能;实验结果表明,GDC薄膜为面心立方结构,在所研究的衬底温度范围内,均呈强(111)织构生长;薄膜表面形貌随衬底温度发生阶段性变化：衬底温度由室温升高到300℃时, 关键词： 2O₃掺杂CeO₂电解质薄膜')" href="#">Gd₂O₃掺杂CeO₂电解质薄膜 反应磁控溅射 生长特性 电学性能     

Thickness and microstructure dependent transport and MR in La0.7Pb0.3MnO3 manganite films

Thickness dependent modifications in the structure and microstructure and their effect on the transport and magnetotransport in chemical solution deposition (CSD) grown La_0.7Pb_0.3MnO₃ (LPMO) manganite thin films grown on single crystalline LaAlO₃ (LAO) (1 0 0) substrates have been studied. X-ray diffraction (XRD) measurements show the reduction in the microstrain at the film-substrate interface with increasing thickness. Increase in grain size and island like grain growth with the reduction in surface roughness as a function of film thickness has been observed from the microstructural studies using atomic force microscopy (AFM) and lateral force microscopy (LFM) measurements. Improvement in the surface to volume ratio (D⁻¹) resulting in the modifications in transport and magnetotransport properties of the LPMO films has been discussed in detail in the light of thickness dependent microstructural effects on the resistivity and magnetoresistance (MR) behavior. The variations in intrinsic and extrinsic MR with D⁻¹ show an interesting interplay between them, which can be explained on the basis of thickness dependent grain size, grain boundary density and grain boundary nature.     

Grain size of MnBi films

MnBi films were prepared by annealing Bi-Mn composite films. The grain size of the MnBi films was strongly influenced by the temperatureT _s of the film substrate during evaporation of Bi and Mn. For 55-nm-thick films, the numberN of MnBi grains per mm² decreased from 4×10⁶ per mm² forT _s =+90°C to 1 per mm² forT _s =−40°C. The diameters of the largest grains observed were about 5 mm. For interpretation of this result, the formation process of MnBi films was observed magneto-optically and electronmicroscopically. It was found thatN was determined by the structure of Bi in the Bi-Mn composite films and that this strongly depended onT _s .     

Identification of intra‐grain and grain boundary defects in polycrystalline Si thin films by electron paramagnetic resonance

We investigate the characteristics of intra‐grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 µm and tailored solid phase crystallized Si layers with similar intra‐grain morphology but systematically varied grain sizes between 0.25 µm and 1 µm. The defect characteristics are found to be composed of two distinctive g ‐values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra‐grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra‐grain defects.

     

Relaxation studies of spray deposited Bi2Co0.1V0.9O5.35 solid electrolyte thin films on stainless steel substrate

The room temperature-stabilized γ-phase ion conducting Bi₂Co_0.1V_0.9O_5.35 thin film was deposited by spray pyrolysis on stainless steel substrate. The intra-grain and grain interior charge transfer was confirmed in these films with impedance spectroscopic measurements done from 1 Hz to 10 MHz in the temperature range 550 K to 741 K. Impedance data further revealed non-Debye kind of relaxation dispersion in the film. The relaxation frequency ranges from 10 to 100 Hz, which predicts long range jumping of the oxygen ions with chemical diffusivity. The Arrhenius plots for relaxation frequency and grain boundary conductivity were found to have same activation energy revealing grain boundary dominant conduction. The effect of polycrystallinity on relaxation dispersion is investigated for the first time on Bi₂Co_0.1V_0.9O_5.35 thin films using impedance formalism.     

Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T_s) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T_s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface morphology studies of the films using AFM reveal the formation of nanostructured indium oxide thin films.     

Structural investigation of YBCO films and bicrystal grain boundary junctions

Summary We present a structural analysis of YBCO superconducting thin films fabricatedin situ by Inverted Cylindrical Magnetron (ICM) sputtering on commercial SrTiO₃ single-crystal and bicrystal substrates. A detailed structural characterization of the superconductor films was performed by using single-crystal X-ray diffractometry confirming that YBCO films have a strongc-axis orientation of the grains with a small mosaic spread. In the films grown on bicrystal substrates we observed a strong correlation with the lattice structure of the substrate. In addition, a surface analysis of the region across the grain boundary edge has been performed by using scanning electron microscopy. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Growth and magnetic characterization of YBCO films

Summary Epitaxial films of YBa₂Cu₃O_7−x were depositedin situ on LaAlO₃ substrates using single-target 90° off-axis sputtering. The films were characterized by magnetization measurements (M vs. T, H), applying the field parallel toc-axis. The observed differences in theT _c andJ _c values are attributed to the different oxygen content in the superconducting films. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Multiferroic and magnetoelectric properties of MnFe2O4/(Pb0.8Sr0.2)TiO3 composite films

Abstract

MnFe₂O₄/(Pb_0.8Sr_0.2)TiO₃ (MFO/PST20) heterostructured composite films with three different structures have been grown on Pt/TiO₂/SiO₂/Si substrates by metal–organic decomposition processing via spin coating technique. The structural analysis revealed that the crystal axes of the MnFe₂O₄ are aligned with those of the PST20 ferroelectric matrix with obvious interfaces and no diffusions exist in all the three composite films. These composite films exhibit simultaneously multiferroic and magnetoelectric responses at room temperature. The growth structure of MFO and PST20 layers has an effect on multiferroic and magnetoelectric coupling behaviours of the composite films. The bi- and four-layered MFO/PST20 composite films exhibit superior ferroelectric properties compared to the tri-layered film. The increasing MFO and PST20 layers in the composite films enhance ferromagnetic properties and are closely related to the strain release in MnFe₂O₄ phase. The MFO/PST20 bi-layered composite film shows a high magnetoelectric voltage co-efficient α_E ~ 194 mVcm^?1Oe^?1 at a dc magnetic field H_dc ~ 2.5 kOe. A significant decrease in α_E value has been observed for tri- and four- layered composite films. A close correlation between phase selective residual stress and magnetoelectric properties has been emerged. The results are reasonably encouraging for employing MnFe₂O₄ for growing multiferroic–magnetoelectric composite films.     

Effect of variations in peptide parameters and charges on the unperturbed dimensions of polypeptide chains

The net charges on various atoms of poly (l-alanine), polyglycine, poly (N-methyl-l-alanine) and poly (N-methylglycine) were computed using the MOLCAO method of Del Re forσ charges and the Hückel MO method forπ charges. The characteristic ratiosC _∞ were computed for all the above polypeptide chains, with different sets of parameters for the peptide unit. The calculated values ofC _∞ are found to be very sensitive to the input peptide geometry. The calculated value of 2·2 forC _∞ of poly (N-methylglycine) obtained with set-3 parameters (derived from a crystal structure containing prolyl residue) is closer to the experimental value of 1·8±0·2 than the value of 2·7 obtained with set 1 (Pauling-Corey parameters), suggesting that the peptide parameters of N-substituted aminoacids have close similarity to set 3 rather than to set 1. The calculated values ofC _∞ of the polypeptide chains show no correlation with the number of allowed conformations, suggesting that the ratio ofC _∞/C _f need not always provide information about the flexibility or freedom of rotation of chain units. Contribution No. 57 from the Molecular Biophysics Unit, Indian Institute of Science, Bangalore 560012, INDIA.     

The excitonic and zero-field splittings of the first triplet state of toluquinone single crystals

The pure electronic S ₀ → T ₁ transition of toluquinone has been studied in absorption using single crystals at 6 K and polarized light. The theory of the Zeeman effect on the crystal exciton levels is developed and compared with the experimental results. High-field measurements show that the factor group splitting is 0·32 cm^-1 and that the orbital plus state lies at higher energy. The ordering and energy separation of the magnetic substates of the factor group levels is also obtained. The latter results are confirmed by low field measurements and the following molecular zero-field splitting parameters are obtained: Y = +0·12, X = -0·02 and Z = -0·09 cm^-1.