Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

High capacity production of >65% spin polarized xenon-129 for NMR spectroscopy and imaging

A rubidium spin exchange optical pumping system for high capacity production of >65% spin polarized 129Xe gas is described. This system is based on a fiber coupled multiple laser diode array capable of producing an unprecedented 210 W of circularly polarized light at the pumping cell with a laser line width of 1.6 nm. The 129Xe nuclear spin polarization is measured as a function of flow rate, pumping cell pressure, and laser power for varying pumping gas compositions. A maximum 129Xe nuclear polarization of 67% was achieved using a 0.6% Xe mixture at a Xe flow rate of 2.45 sccm. The ability to generate 12% polarized 129Xe at rates in excess of 1L-atm/h is also demonstrated. To achieve production of 129Xe gas at even higher polarization will rely on further optimization of the pumping cell and laser beam geometries in order to mitigate problems associated with temperature gradients that are encountered at high laser power and Rb density.     

Simplified model for calculation of power and spectral characteristics of laser diode with fiber Bragg grating

A simplified model consisting of a laser diode, air gap, and optical fiber is used to calculate power and spectral characteristics and the band width of the radiation of laser with fiber Bragg grating. The results of the simplified model are in reasonable agreement with the experimental data on power and spectral characteristics. The radiation band width of the laser diode with fiber Bragg grating can be less than the band width for a single laser diode by four orders of magnitude.     

基于二次谐波特性的DFB激光器稳频新方法研究

窄线宽稳频激光器在工业生产控制中具有广泛的应用,但自由运转的半导体激光器的频率漂移限制了激光器的使用。为稳定半导体激光器的频率,提出了一种基于二次谐波吸收特性来实现窄线宽二极管激光器的稳频新方法,利用1.396 μm的DFB二极管激光器测量水汽的二次谐波信号来实现激光的稳频,实验结果表明在100 h内激光器输出波长漂移有效的抑制在±0.16 pm范围内,激光稳频后,其吸收峰的位置不随环境温度的变化而漂移。该方法具有简单、可靠等优点,对二极管激光频率的稳定具有广阔的应用前景。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 °C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 °C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature.     

300% magnetocurrent in a room temperature operating spin-valve transistor

Here we present the realization of a room temperature operating spin-valve transistor with huge magnetocurrent (MC=300%) at low fields. This spin-valve transistor employs hot-electron transport across a Ni₈₁Fe₁₉/Au/Co spin valve. Hot electrons are injected into the spin valve across a Si–Pt Schottky barrier. After traversing the spin valve, these hot electrons are collected using a second Schottky barrier (Si–Au), which provides energy and momentum selection. The collector current is found to be extremely sensitive to the spin-dependent scattering of hot electrons in the spin valve, and therefore on the applied magnetic field. We also illustrate the role of the collector diode characteristics in determining the magnetocurrent under collector bias.     

多级PIN限幅器高功率微波效应研究

基于PIN二极管电热自洽耦合模型,构建了两级PIN限幅器高功率微波(HPM)效应电路模型。根据模拟模型设计加工了两级限幅器实验样品,限幅器输入、输出特性注入实验数据与模拟计算结果基本一致,验证了多级限幅器模型的有效性,表明该多级PIN限幅器模型能够应用于HPM效应模拟。针对不同HPM波形参数进行了HPM效应模拟,计算结果表明:随着注入功率的增大,脉宽增宽,前级厚I层PIN二极管结温升比后级薄I层PIN二极管结温升要高,因此厚I层PIN二极管更易受到损伤;而频率和前沿参数对结温升影响较小。     

多波长半导体激光阵列端泵Nd:YAG脉冲激光器

研制了无温控多波长激光二极管阵列端面泵浦Nd：YAG电光调Q激光器。采用4 000 W多波长准连续激光二极管阵列作为泵浦源,快轴准直镜与透镜导管作为泵浦耦合系统,端面泵浦φ6 mm×60 mm的Nd：YAG晶体,并采用RTP晶体进行电光调Q实验。在重复频率5 Hz、室温（25℃）时,激光器获得了最大输出能量74.4 mJ、脉宽15 ns的1 064 nm脉冲激光输出,光光转换效率达到11%。在25~55℃的工作温度下,对多波长LDA的光谱特征与激光器的输出特性作了测试,激光器输出能量随着工作温度的上升而先迅速下降再逐步保持稳定,当重复频率分别为5 Hz和10 Hz时,激光器对应的最低输出能量分别为48 mJ与37 mJ。     

Atomic-scale magnetic domain walls in quasi-one-dimensional Fe nanostripes

Fe nanostripes on W(110) are investigated by Kerr magnetometry and spin-polarized scanning tunneling microscopy (SP-STM). An Arrhenius law is observed for the temperature dependent magnetic susceptibility indicating a one-dimensional magnetic behavior. The activation energy for creating antiparallel spin blocks indicates extremely narrow domain walls with a width on a length scale of the lattice constant. This is confirmed by imaging the domain wall by SP-STM. This information allows the quantification of the exchange stiffness and the anisotropy constant.     

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流. 关键词： GaMnN 共振隧穿 自旋电流 极化电荷     

Heat and spin transport in magnetic nanowires

Transport measurements are carried out in which temperature oscillation is applied to magnetic nanostructures. Using spin valves, this measurement reveals aspects of the spin transport in non-collinear configurations. In one implementation, an AC voltage is detected when a DC current is driven through the nanostructure under test and its temperature is made to oscillate by illuminating it with a laser diode. A simpler approach is presented that relies on Joule heating to generate the temperature oscillation, thus eliminating the need for any optical component.     

Effect of stripe width on junction temperature of stripe-geometry semiconductor laser diodes

When a laser diode (LD) is operated at high current densities, the junction temperature can rise significantly above the heat sink temperature. Generally, rise in junction temperature is a direct consequence of inability of different layers in a laser diode to dissipate heat efficiently due to finite thermal resistance. Usually, thermal resistance increases with a reduction in stripe width. Hence, the issue of thermal management becomes very important in modern days narrow stripe-geometry lasers. In this paper, the effect of stripe width on the junction temperature of a stripe-geometry semiconductor LD is analyzed by originating different heat sources. This has been accomplished using a simple technique for the measurement of junction temperature of a LD.     

Spin polarization of electrons in a magnetic impurity doped semiconductor quantum dot – The effect of electron–phonon interaction

A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and magnetic fields. It is found that magnetic impurity increases the degree of spin polarization irrespective of temperature, while the electron–phonon interaction decreases the degree of spin polarization. Results are found to be in better agreement with experiments.     

Current-induced domain wall motion in magnetic nanowires with spatial variation

We model current-induced domain wall motion in magnetic nanowires with the variable width. Employing the collective coordinate method we trace the wall dynamics. The effect of the width modulation is implemented by spatial dependence of an effective magnetic field. The wall destination in the potential energy landscape due to the magnetic anisotropy and the spatial nonuniformity is obtained as a function of the current density. For a nanowire of a periodically modulated width, we identify three (pinned, nonlinear, and linear) current density regimes for current-induced wall motion. The threshold current densities depend on the pulse duration as well as the magnitude of wire modulation. In the nonlinear regime, application of ns order current pulses results in wall displacement which opposes or exceeds the prediction of the spin transfer mechanism. The finding explains stochastic nature of the domain wall displacement observed in recent experiments.     

Domain wall resistance in epitaxial Fe wires

We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(1 1 0) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall in the connection area of two wires with different widths. Magnetoresistance measurements of such wire structures clearly reveal resistance contributions arising from a domain wall. The presence of the domain wall is proven by photoemission electron-microscopy with synchrotron radiation. Moreover, micromagnetic simulations are performed to determine the spin orientations, especially within the domain wall. This permits us to calculate the anisotropic magnetoresistance caused by the domain wall. Taking this into account, we determine the intrinsic domain wall resistance, for which we found a positive value of 0.2%, in agreement with theoretical predictions.     

脉冲功率3 kW二极管激光器叠阵的相变冷却

针对二极管激光器叠阵的高效散热冷却开展了研究,设计了基于R134a制冷剂的相变冷却系统和以节流式微通道相变冷却方式工作的冷却器,完成了脉冲功率3 kW叠阵的封装,并分析了制冷剂在热沉进出口的温度对叠阵出光波长的影响。实验测试结果表明:在20%的高占空比下,电流197 A时叠阵的输出功率达到3 030 W,插座效率为39%,光谱宽度小于3.8 nm,冷却器内R134a的气化率约为50%。制冷剂R134a的流量为0.60 L/min,仅为水系统的1/5,大幅减小了冷却液流量和热管理系统的体积。     

Domain wall motion by the magnonic spin Seebeck effect

The recently discovered spin Seebeck effect refers to a spin current induced by a temperature gradient in a ferromagnetic material. It combines spin degrees of freedom with caloric properties, opening the door for the invention of new, spin caloritronic devices. Using spin model simulations as well as an innovative, multiscale micromagnetic framework we show that magnonic spin currents caused by temperature gradients lead to spin transfer torque effects, which can drag a domain wall in a ferromagnetic nanostructure towards the hotter part of the wire. This effect opens new perspectives for the control and manipulation of domain structures.     

Electrical spin injection from an organic-based ferrimagnet in a hybrid organic-inorganic heterostructure

We report the successful extraction of spin-polarized current from the organic-based room temperature ferrimagnetic semiconductor V[TCNE](x) (x～2, TCNE: tetracyanoethylene; T(C)～400 K, E(G)～0.5 eV, σ(300?K)～10(-2) S/cm) and its subsequent injection into a GaAs/AlGaAs light-emitting diode. The spin current tracks the magnetization of V[TCNE](x～2), is weakly temperature dependent, and exhibits heavy-hole-light-hole asymmetry. This result has implications for room temperature spintronics and the use of inorganic materials to probe spin physics in organic and molecular systems.     

激光器特性在痕量气体检测中的影响

研究了激光器扫描步长和线宽两种特性对可调谐半导体激光吸收光谱检测系统的影响,理论上推导出激光与气体吸收谱线的作用原理,分析出扫描信号(锯齿波)的台阶间隔和高度影响激光器中心波长的扫描原理.设定了仿真参数,仿真出锯齿波台阶数与最大扫描误差关系曲线,得出扫描信号的一个周期内具有4000个台阶时,半高全宽(FWHM)大于0.01 cm-1,误差小于1‰;仿真出激光器线宽与最大幅值、线宽误差关系曲线,给出线宽误差最大为1%,0.5%时激光器线宽对应的最小FWHM.在温度系数n取0.9,大气展宽系数γair取0.005的条件下,给出温度T,压强P与FWHM关系图,推出了适用的压强与温度范围.为指导选取激光器与气体吸收谱线、提高系统检测限提供了相关理论依据.