Nanowedge island formation on Mo(1 1 0)

The deposition of ultrathin Fe films on the Mo(1 1 0) surface at elevated temperatures results in the formation of distinctive nanowedge islands. The model of island formation presented in this work is based on both experiment and DFT calculations of Fe adatom hopping barriers. Also, a number of classical molecular dynamics simulations were carried out to illustrate fragments of the model. The islands are formed during a transition from a nanostripe morphology at around 2 ML coverage through a Bales-Zangwill type instability. Islands nucleate when the meandering step fronts are sufficiently roughened to produce a substantial overlap between adjacent steps. The islands propagate along the substrate [0 0 1] direction due to anisotropic diffusion/capture processes along the island edges. It was found that the substrate steps limit adatom diffusion and provide heterogeneous nucleation sites, resulting in a higher density of islands on a vicinal surface. As the islands can be several layers thick at their thinnest end, we propose that adatoms entering the islands undertake a so-called “vertical climb” along the sides of the island. This is facilitated by the presence of mismatch-induced dislocations that thread to the sides of the islands and produce local maxima of compressive strain. Dislocation lines also trigger initial nucleation on the surface with 2-3 ML Fe coverage. The sides of the nanowedge islands typically form along low-index crystallographic directions but can also form along dislocation lines or the substrate miscut direction.     

Diffusion mechanisms for iron on tungsten

Diffusion of iron atoms on clean W(1 0 0) and W(1 1 0) as well as on Fe/W(1 0 0) and Fe/W(1 1 0) surfaces was investigated by means of exhaustive first-principle calculations. Comparison of the activation energy barriers obtained for hopping and exchange migration processes shows that the surface diffusion proceeds via jumps to the nearest sites. The activation energies are higher for Fe adatom on clean tungsten than those for Fe adatoms moving on iron-covered tungsten. The magnetism of the underlying Fe/W(1 0 0) films has a pronounced influence on the diffusion, as evidenced not only by a reduced activation energy barrier but also by a change of the stable adsorption place. Fe atoms reaching step edges are trapped there and eventually diffuse along the steps more slowly than the adatoms on the terraces. The rate of diffusion increases upon depositing a row of Fe atoms along steps.     

Si nucleation on Si(1 1 1)-7 × 7: From cluster pairs to 2D islands

Nucleation of 2D islands in Si/Si(1 1 1)-7 × 7 molecular beam epitaxy is studied using scanning tunneling microscopy (STM). A detailed analysis of the population of small amorphous clusters coexisting on the surface with epitaxial 2D islands has been performed. It is shown that small clusters tend to form pairs. The pairs serve as precursors for 2D islands as confirmed by direct STM observations of the smallest 2D islands covering two adjacent half-unit cells of the 7 × 7 reconstruction. It is proved with scaling arguments that the critical nucleus for 2D island formation consists not only of the pair itself, but also includes additional adatoms not belonging to the stable clusters.     

The self-assembly of metallic nanowires

We have demonstrated that nickel adatoms self-assemble into quasi one-dimensional nanowires on vicinal Rh(1 1 1) surfaces by decorating their regular monoatomic step arrays, while V adatoms do not. The step decoration process has been followed experimentally by variable-temperature scanning tunnelling microscopy and high-resolution X-ray photoelectron spectroscopy. The physical origin of the different step-assisted self-assembly behaviour of Ni and V adatoms has been elucidated theoretically and is ascribed to different diffusion barriers and trapping capability of Ni and V at Rh steps.     

The effect of embedded Pb on Cu diffusion on Pb/Cu(1 1 1) surface alloys

We have used scanning tunneling microscopy and low-energy electron microscopy to measure the thermal decay of two-dimensional Cu, Pb-overlayer, and Pb-Cu alloy islands on Pb-Cu(1 1 1) surface alloys. Decay rates covering 6-7 orders of magnitude are accessible by applying the two techniques to the same system. We find that Cu adatom diffusion across the surface alloy is rate-limiting for the decay of both Pb and Pb-Cu islands on the surface alloy and that this rate decreases monotonically with increasing Pb concentration in the alloy. The decrease is attributed to repulsive interactions between Cu adatoms and embedded Pb atoms in the surface alloy. The measured temperature dependences of island decay rates are consistent with first-principles calculations of the Cu binding and diffusion energies related to this “site-blocking” effect.     

Diffusion of Pb adatom and ad-dimer on Si(1 0 0) from ab initio studies

The diffusion pathways of Pb adatoms and ad-dimers on Si(1 0 0) are investigated by first-principles calculations. Pb adatoms are found to diffuse on top of the Si(1 0 0) dimer row with an energy barrier of 0.31 eV. However, Pb dimers are energetically more stable. Pb dimers on top of the dimer row have a high energy barrier (0.95 eV) to rotate from the lowest energy configuration to the orientation parallel to the underlying Si(1 0 0) dimer row. Once the ad-dimer is oriented parallel to Si(1 0 0) dimer row, they can diffuse along the dimer row with an energy barrier of only 0.32 eV.     

On the importance of long range summation of oscillatory interactions in Monte Carlo modeling

Kinetic and standard Monte Carlo (kMC and sMC) simulation of the system, where a pair-interaction energy is an oscillatory function of interatomic distance, requires a very careful selection of a cutoff radius r_cut of the pair-interactions. As an example, the homoepitaxy of Cu on Cu(1 1 1) is investigated. The surface-state mediated interaction between the Cu adatoms has a very long range and oscillates between attraction and repulsion as a function of the adatom-adatom distance. The simulations reveal that, at 15 K and 0.03 monolayer coverage, the Cu adatoms self-assemble into a dilute nanostructure with a weak local hexagonal order, where the average separation between adatoms equals 11.7 Å. The nanostructure consists of islands and chains of adatoms. The simulated structure of adlayer surprisingly strongly depends on the cutoff radius applied to the Monte Carlo model. The tendency to the dilute island formation strengthens and weakens with the same periodicity vs. r_cut as the pair-interaction energy vs. interatomic distance. The submonolayer morphology stabilizes when r_cut becomes longer than 50 Å.     

Morphological evidence for surface pre-melting on Si(1 1 1)

We present what we believe to be the first morphological evidence for the occurrence of surface pre-melting on the Si(1 1 1) surface. Our results complement the extensive previous evidence from diffraction and ion scattering techniques for the presence of pre-melted (liquid-like) layers on Si(1 1 1) below the bulk melting temperature and also suggest how atomic steps are involved in the initiation of such layers. Our results are based on atomic force microscopy studies of morphologies that are preserved when surfaces are annealed in a range of high temperatures and then rapidly cooled to room temperature for observation. A unique feature of the experiments is the use of specially prepared atomically flat or very low step density surfaces; this allows us to see how the liquid-like morphologies are associated with the steps and also allows the high temperature structures to survive the cooling process without being absorbed into the steps which normally would exist on a surface vicinal to (1 1 1). Quenched-in structures ascribed to pre-melting also act as sinks for diffusing ‘excess’ adatoms generated by the (1 × 1) to (7 × 7) transition and this leads to the formation of dendritic islands.     

Transformation of cluster structure at initial stage

The initial stages of cluster nucleation for Pd or Ir adatoms on a W (1 1 0) surface and in the vicinity of surface steps are directly imaged by a field ion microscope (FIM). Three types of structures are observed. One is a one-dimensional linear chain, which is parallel to the nearest neighbor-stacking directions of the substrate. Another is a two-dimensional compact island, which is a pseudomorphic structure like the substrate. The other is a three-dimensional cluster, which shows a structural transition from bcc (1 1 0) to fcc (1 1 1). Factors affecting the structural transformation include coverage of atoms or atom chains, temperature of heat treatments and boundary of the substrate terrace.     

Growth and thermal evolution of submonolayer Pt films on Ru(0 0 0 1) studied by STM

The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage θ_Pt, growth temperature T_G and post-growth annealing temperature T_A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 × 10⁻⁴ ML/s. Two types of orientation, rotated by 180° and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer.     

Crucial role of substrate steps in de-wetting of crystalline thin films

Using low-energy electron microscopy, we show that de-wetting of Ag and Cu films on Ru(0 0 0 1) occurs by 3-D islands migrating across step edges in the “downhill” direction. We have observed islands thicken by more than 50 atomic layers in this manner. The island migration allows 3-D growth to occur in a way that avoids the nucleation barrier associated with forming 2-D islands on top of 3-D islands. Indeed, without substrate steps this nucleation barrier is not surmounted, and no 3-D islands are formed in the films studied.     

Self-assembled InAs island formation on GaAs (1 1 0) by metalorganic vapor phase epitaxy

Formation of self-assembled InAs 3D islands on GaAs (1 1 0) substrate by metal organic vapor phase epitaxy has been investigated. Relatively uniform InAs islands with an average areal density of 10⁹ cm⁻²are formed at 400 ° C using a thin InGaAs strain reducing (SR) layer. No island formation is observed without the SR layer. Island growth on GaAs (1 1 0) is found to require a significantly lower growth temperature compared to the more conventional growth on GaAs (1 0 0) substrates. In addition, the island height is observed to depend only weakly on the growth temperature and to be almost independent of the V/III ratio and growth rate. Low-temperature photoluminescence at 1.22 eV is obtained from the overgrown islands.     

STM imaging of electrically floating islands

Appearances and disappearances of Gd islands grown on top of a W(1 1 0) substrate were observed in time scales of hours after exposing the surface to a few Langmuirs of hydrogen. The phenomenon is presented and explained in terms of (temporary) creation of electrically floating islands, due to electrical decoupling of the island and substrate by the hydrogen that diffuses into the island/substrate interface. The disappearance of such an island is explained by forming a double barrier junction consisting of two tunneling barriers in series, causing, by charging, the potential of the island to become equal to that of the tip. The island then becomes “invisible” and the tip follows the corrugation of the surface under the substrate. The reappearance follows hydrogen mobility that retains the electrical conductivity of the island-substrate interface.     

Numerical study of growth and relaxation of small C60 nanoclusters

We investigate by means of kinetic Monte Carlo simulations the growth and thermal relaxation of small fullerene nanoclusters modelled by the Pacheco-Prates Ramalho pair potential. The activation barriers for diffusion processes are calculated on the fly by the dimer method. The elementary transitions which are likely to occur around room temperature are figured out. We study island growth on a perfect fullerene cluster and obtain a morphological transition of the island with increasing temperature. At T = 150 K, the islands are small and irregular. Around room temperature, elongated chain islands are obtained while at higher temperature, they are compact with an anti-Mackay stacking. These island morphologies have been shown to influence the character of the growth. Thus, growing fullerene clusters are disordered with rough surface below T = 300 K whereas at T = 450 K the growth occurs facet-by-facet within the growing shell.     

Atomic-level investigation of Al and Ni thin film growth on Ni(1 1 1) surface: Molecular dynamics simulation

Using molecular dynamics (MD) simulation, the structural characteristics of Al and Ni thin film growth on Ni(1 1 1) substrate according to the incident energy of adatoms were investigated. In case of Al on Ni(1 1 1), Al adatoms were grown basically through the layer-by-layer growth mode. On the other hand, Ni thin films on Ni(1 1 1) surface at low incident energy were shown to favor island growth. The steering effect due to atomic attraction, which results in rougher surface, was significantly observed at low incident energy. The growth mode of Ni film was, however, changed to follow layer-by-layer growth mode for the incident energy of 6 eV. The different aspects of surface morphology between Al and Ni deposition on Ni(1 1 1) surface could be successfully explained by the surface diffusion and impact cascade diffusion.     

Interaction of Ag and O on W(1 1 0) studied by scanning tunneling microscopy

The structural changes of Ag films on W(1 1 0) upon coadsorption of oxygen have been studied by scanning tunneling microscopy. The exposure of one monolayer Ag to oxygen leads to a phase separation into an Ag bilayer and patches of O-covered W(1 1 0). The effective Ag island thickness increases linearly with oxygen exposure. For Ag submonolayer-islands the onset of the bilayer formation is delayed, the induction period increases with the available free W area. We conclude that the steps of the transport process are (1) dissociation of oxygen on W and on the Ag islands, (2) site exchange of atomic oxygen with Ag atoms predominantly at the island edges - while on W(1 1 0) the oxygen is immobile, (3) diffusion of the displaced Ag atoms to the island edges where they are incorporated into the monolayer and (4) initiation of Ag bilayer formation, once the W(1 1 0) is saturated with O. This indicates an unexpected activity of the Ag monolayer on W(1 1 0) towards oxygen dissociation. In case of a reversed deposition sequence, where submonolayer quantities of Ag are adsorbed on an oxygen-precovered W(1 1 0) surface, growth of Ag clusters is observed. The distribution of cluster size and cluster height depends critically on the spatial order within the predeposited oxygen overlayer - it is obvious that the oxygen overlayer on the W surface acts as a structured template for preferential Ag nucleation.     

Growth mechanisms for wire-like epitaxial gold silicide islands on Si(1 1 0) surfaces

Epitaxial islands grown on various substrates are usually strained because of differences in lattice constants of the materials of the island and the substrate. Shape transition in the growth of strained islands has been proposed as a mechanism for strain relief and a way to form self-organized quantum wires. Shape transition usually leads to an elongated island growth. However, an elongated island growth may also be due to an anisotropic diffusion of material, the anisotropy being imposed by the symmetry of the substrate surface. In the present example, growth of gold silicide wire-like nanostructures on a Si(1 1 0) surface has been investigated by photoemission electron microscopy (PEEM). Growth of elongated unidirectional gold silicide islands, with an aspect ratio as large as 12:1, has been observed by PEEM following gold deposition on the Si substrate and subsequent annealing at the Au-Si eutectic temperature. Distribution of the width and the length of the gold silicide islands as a function of island area shows a feature similar to that for the shape transition. However, detailed investigations reveal that the elongated growth of gold silicide islands is rather mainly due to anisotropic diffusion of gold due to the twofold symmetry of the (1 1 0) surface of the Si substrate.     

Morphology changes due to AC induced electromigration in Gd islands on W(1 1 0)

Gd islands were grown on W(1 1 0) surface by evaporating Gd on the substrate at room temperature and subsequent annealing. STM images reveal in many cases islands which have a deep hole inside them. The appearance of the hole is associated with the application of an AC field. No such holes appear when the sample is heated by a DC current. We show that this can be explained by the combined affect of the AC field and the barrier to diffusion introduced by steps that can create a nucleus for further growth of an island which includes a hole in the middle. This may be generalized to a technique of tailoring the size, shape and distances of islands by, for example, two orthogonal AC fields with a phase delay of 90° between them.     

Intermixing at the interface of the system Nb/Fe(1 1 0) investigated by STM

The growth of niobium on the Fe(1 1 0) surface at a deposition temperature between room temperature (RT) and 680 K was studied using in situ STM and LEED. At RT we observe no indication of intermixing. Although a final roughness of only 1.7 Å is reached, the crystalline quality is low. At elevated growth temperatures the development of a surface alloy was observed, whose formation is ascribed to an exchange mechanism through which Nb adatoms are incorporated into the Fe surface. These Nb atoms arrange themselves in chains along the [0 0 1] direction. The expelled Fe atoms form islands on the Nb/Fe-alloy substrate. At higher coverage additionally a Nb wetting layer and intermixed 3D islands evolve.