Surface electronic structure of α-Mo2C(0 0 0 1)

The electronic structure of α-Mo₂C(0 0 0 1) has been investigated by angle-resolved photoemission spectroscopy utilizing synchrotron radiation. A sharp peak is observed at 3.3 eV in normal-emission spectra. Since the peak shows no dispersion as a function of photon energy and is sensitively attenuated by oxygen adsorption, the initial state of the peak is attributed to a surface state. Resonant photoemission study shows that the state includes substantial contribution of 4d orbitals of the Mo atoms in the second layer. The emissions with constant kinetic energies of 22 and 31 eV above the Fermi level (E_F) are found in normal-emission spectra, and these emissions are interpreted as originating from the Mo N₁N₂₃V and N₂₃VV Auger transitions, respectively.     

Adsorption site, core level shifts and charge transfer on the Pd(1 1 1)-I(√3 × √3) surface

We use core level photoelectron spectroscopy and density functional theory (DFT) to investigate the iodine-induced Pd(1 1 1)-I(√3 × √3) structure formed at 1/3 ML coverage. From the calculations we find that iodine adsorbs preferentially in the fcc hollow site. The calculated equilibrium distance is 2.06 Å and the adsorption energy is 68 kcal/mol, compared to 2.45 Å and 54 kcal/mol in the atop position. The adsorption energy difference between fcc and hcp hollows is 1.7 kcal/mol. Calculated Pd 3d surface core level shift on clean Pd(1 l 1) is 0.30 eV to lower binding energy, in excellent agreement with our experimental findings (0.28-0.29 eV). On the Pd(1 1 1)-I(√3 × √3) we find no Pd 3d surface core level shift, neither experimentally nor theoretically. Calculated charge transfer for the fcc site, determined from the Hirshfeld partitioning method, suggests that the iodine atom remains almost neutral upon adsorption.     

Theoretical study on the temperature-induced structural transition of the Si(1 1 3) surface

The temperature-induced structural transition of the Si(1 1 3) surface is investigated by ab initio calculations. In this study, it is found that the room-temperature phase and the high-temperature phase have the 3 × 2 interstitial structure and the 3 × 1 interstitial structure, respectively. The existence of the 3 × 2 and 3 × 1 interstitial structures is supported by the analysis of scanning tunneling microscopy (STM) images and the calculation of surface core level shifts using final state pseudopotential theory. The theoretical STM images of interstitial structures are in good agreement with the STM images suggested by experiments. The analysis of STM images provides an insight into the characteristics of domain boundaries observed frequently in experiments. It is also found that the domain boundary can be formed by local 3 × 1 interstitial structures on the 3 × 2 interstitial surface. The theoretical analysis of the surface core level shifts reveals that the surface core levels in experiment originate from the interstitial structures. The lowest values in the surface core level shifts are found to be associated with the 2p core level shifts of the interstitial atoms.     

Study of the early stages of Cr/6H-SiC(0 0 0 1) interface formation

The early stages of the Cr/6H-SiC(0 0 0 1) interface formation at room temperature were investigated using XPS, LEED and work function (WF) measurements. Upon stepwise Cr evaporation in UHV up to a thickness of 5-10 monolayers (ML) at RT, the binding energy of the XPS Cr 2p_3/2 core level peak shifted from 576.1 eV, at submonolayer coverage, to 574.7 eV (corresponding to metallic Cr) for the final Cr deposit, while the binding energies of the substrate XPS core level peaks remained stable. The WF exhibited a steep decrease of about 0.5 eV from the initial SiC substrate value, upon submonolayer coverage, but then increased gradually to saturation at a value of about 4.8 eV (polycrystalline Cr film with some chemisorbed oxygen). The growth of the ultrathin film was via 3D-cluster formation. The height of the Schottky barrier for the Cr/6H-SiC(0 0 0 1) contact was found by XPS to be 0.5 ± 0.1 eV. The results, generally, indicate the absence of any extended interfacial silicide-like interaction at RT.     

Theoretical study of hydrogen adsorption on the GaN(0 0 0 1) surface

Ab initio density functional theory, using the B3LYP hybrid functional with all-electron basis sets, has been applied to the adsorption of H on the (0 0 0 1) surface of wurtzite GaN. For bulk GaN, good agreement is obtained with photoemission and X-ray emission data for the valence band and for the Ga 3d and N 2s shallow core levels. A band gap of E_g = 4.14 eV is computed vs the experimental value (at 0 K) of 3.50 eV. A simple model, consisting of a (2 × 2) structure with 3/4-monolayer (ML) of adsorbed H, is found to yield a density of states in poor agreement with photoemission data for H adsorbed on surfaces prepared by ion bombardment and annealing. A new model, consisting of co-adsorbed Ga (1/4 ML) and H (1/2 ML), is proposed to account for these data.     

Kinetics of residual gas adsorption on Ge(1 1 1) surface in low-energy electron backscattering

Low-energy (0.4-1.2 eV) electron backscattering is applied for the investigation of kinetics of residual gas adsorption effect on the concentration and energy positions of surface electron states of Ge(1 1 1) surface. Chemosorption of residual gas molecules on Ge(1 1 1) at P ∼ 10⁻⁷ Pa and room temperature is shown to be most active during the first 48 h. Low concentration of dangling valence bonds on the reconstructed Ge(1 1 1) (2 × 8) surface is shown to determine its low activity to chemosorption.     

Comparative study of the GaAs(1 0 0) surface cleaned by atomic hydrogen

In attempt to correlate electronic properties and chemical composition of atomic hydrogen cleaned GaAs(1 0 0) surface, high-resolution photoemission yield spectroscopy (PYS) combined with Auger electron spectroscopy (AES) and mass spectrometry has been used. Our room temperature investigation clearly shows that the variations of surface composition and the electronic properties of a space charge layer as a function of atomic hydrogen dose display three successive interaction stages. There exists a contamination etching stage which is observed up to around 250 L of atomic hydrogen dose followed by a transition stage and a degradation stage which is observed beyond 700 L of exposure. In the first stage, a linear shift in the surface Fermi level is observed towards the conduction band by 0.14 eV, in agreement to the observed restoration of the surface stoichiometry and contamination removal. The next stage is characterized by a drop in ionization energy and work function, which quantitatively agrees with the observed Ga-enrichment as well as the tail of the electronic states attributed to the breaking As-dimers. As a result of the strong hydrogenation, the interface Fermi level E_F − E_v has been pinned at the value of 0.75 eV what corresponds to the degradation stage of the GaAs(1 0 0) surface that exhibits metallic density of states associated with Ga_As antisites defects. The results are discussed quantitatively in terms of the surface molecule approach and compared to those obtained by other groups.     

Density functional theory study of selenium adsorption on Fe(1 1 0)

The adsorption of atomic Se on a Fe(1 1 0) surface is examined using the density functional theory (DFT). Selenium is adsorbed in high-symmetry adsorption sites: the -short and long-bridge, and atop sites at 1/2, 1/4, and 1 monolayer (ML) coverages. The long bridge (LB) site is found to be the most stable, followed by the short bridge (SB) and top sites (T). The following overlayer structures were examined, p(2 × 2), c(2 × 2), and p(1 × 1), which correspond to 1/4 ML, 1/2 ML, and 1 ML respectively. Adsorption energy is −5.23 eV at 1/4 ML. Se adsorption results in surface reconstruction, being more extensive for adsorption in the long bridge site at 1/2 ML, with vertical displacements between +8.63 and −6.69% -with regard to the original Fe position-, affecting the 1st and 2nd neighbours. The largest displacement in x or y-directions was determined to be 0.011, 0.030, and 0.021 Å for atop and bridge sites. Comparisons between Se-adsorbed and pure Fe surfaces revealed reductions in the magnetic moments of surface-layer Fe atoms in the vicinity of the Se. At the long bridge site, the presence of Se causes a decrease in the surface Fe d-orbital density of states between 4 and 5 eV below Fermi level. The density of states present a contribution of Se states at −3.1 eV and −12.9 eV. stabilized after adsorption. The Fe-Fe overlap population decrease and a Fe-Se bond are formed at the expense of the metallic bond.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.     

The study on the surface state of CdZnTe (1 1 0) surface

Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state.     

Investigation of STM tip influence on the recorded position of the Shockley surface state on Au(1 1 1)

Current imaging tunneling spectroscopy (CITS) carried out in UHV at room temperature was used to study the electronic structure of the Au(1 1 1) surface in the range of −1.0-1.0 eV. The CITS experiment showed the existence of the Shockley surface state (SS) located in range 0.3-0.7 eV below the Fermi level. A wide range of SS locations is explained by the influence of the electronic structure of the tip on the measurement of the tunneling current. This hypothesis is supported by a simple theoretical model. Finally, a new method of CITS analysis is suggested. The method is related to counting local maxima locations on each tunneling spectroscopy curve and building a histogram. This method of data analysis allows finding statistically the most frequently appearing maxima. Using the histogram method the location of the SS is estimated to 0.47 eV below the Fermi level.     

STS investigations of temperature dependence of Au(1 1 1) surface state energy position

High temperature scanning tunneling spectroscopy (HT-STS) was used to investigate the electronic structure of Au(1 1 1) at different temperatures in the energy range 0-1 eV below the Fermi level. We concentrated on the influence of temperature on the Shockley surface state (SS) appearing on noble metals surface due to a surface projected bulk bang gap in [1 1 1] direction. The influence of temperature on the projected band gap edge (BE) was also investigated. The experiment was carried out in the temperature range 294-580 K. As the result of the experiment a delicate shift of the SS and the BE in direction of the Fermi level was reported.     

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface

In this paper, the InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ−Δ−X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.     

High temperature STM/STS investigations of resonant image states on Au(1 1 1)

Scanning tunneling microscopy (STM) and spectroscopy (STS) were used to study the electronic structure of Au(1 1 1) surface in the range of 2-5.5 eV above the Fermi level. In this paper, we concentrate firstly on the position of the upper band gap edge (BE) existing in [1 1 1] direction in Au(1 1 1) and secondly on the position of the resonant image potential surface state (RIS) located in the bulk states approximately 1.1 eV above BE. The experiment was carried out in UHV at two temperatures 294 K and 580 K. Our high temperature STS (HT-STS) results clearly show the presence of RIS and BE local maxima at both temperatures. What is more, a slight shift towards the Fermi level of BE and RIS was observed. Those shifts were the consequence of the change of [1 1 1] band gap and lowering gold work function due to the thermal extension of interatomic distances. Finally, estimation of the work function was given at 294 K and 580 K.     

High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(1 1 1)-(6 × 6) substrate

The electronic structure of Si(1 1 1)-(6 × 6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb_(1 1 1) and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(1 1 1)-(6 × 6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.     

Surface resonance transition of roughened Cu(1 1 0)

The temperature dependence of the reflection anisotropy spectroscopy (RAS) of a Cu(1 1 0) surface has been studied over the temperature range 700-1000 K. Because of the roughening transition at 900 K, the bimodal feature at 4.2 eV for a clean surface shifted to 4.3 eV on annealing. A significant decrease in intensity of the same energy level was also observed with increasing annealing temperature. In the annealing temperature range 700-1000 K, anharmonic behavior is expected to be the predominant process of atomic disordering at the surface. Changes in the RAS of Cu(1 1 0) as a result of thermal processing can be understood in terms of the associated changes in surface states. The RAS signal for a surface resonance transition at 4.2 eV is associated with monoatomic [0 0 1] steps.     

A density-functional study on the atomic geometry and adsorption of the Cu(1 0 0) c(2 × 2)/N Surface

In this work we have performed total-energy calculations on the geometric structure and adsorption properties of Cu(1 0 0) c(2 × 2)/N surface by using the density-functional theory and the projector-augmented wave method. It is concluded that nitrogen atom was adsorbed on a FFH site with a vertical distance of 0.2 Å towards from surface Cu layer. The bond length of the shortest Cu-N bonding is calculated to be 1.83 Å. Geometry optimization calculations exclude out the possibilities of adsorbate induced reconstruction mode suggested by Driver and Woodruff and the atop structural model. The calculated workfunction for this absorbate-adsorbent system is 4.63 eV which is quite close to that of a clean Cu(1 0 0) surface. The total-energy calculations showed that the average adsorption energy per nitrogen in the case of Cu(1 0 0) c(2 × 2)-N is about 4.88 eV with respect to an isolated N atom. The absorption of nitrogen on Cu(1 0 0) surface yields the hybridization between surface Cu atoms and N, and generates the localized surface states at −1.0 eV relative to Fermi energy E_F. The stretch mode of the adsorbed nitrogen at FFH site is about 30.8 meV. The present study provides a strong criterion to account for the local surface geometry in Cu(1 0 0) c(2 × 2)/N surface.     

Theoretical study of CO adsorption on the illuminated TiO2 (0 0 1) surface

A quantum modeling of the CO adsorption on illuminated anatase TiO₂ (0 0 1) is presented. The calculated adsorption energy and geometries of illuminated case are compared with the ground state case. The calculations were achieved by using DFT formalism and the BH and HLYP. Upon photoexcitation, an electron-hole pair is generated. Comparing of natural population in the ground state and the exited state, shows that an electron is trapped in a Ti⁴⁺ ion and a hole is localized in an oxygen ion. The photoelectron helps generation of a CO₂ molecule on the TiO₂ surface. As shown by optimization of these systems, the CO molecule adsorbed vertically on the TiO₂ (0 0 1) surface in the ground state case while the CO molecule made an angle of 134.3° to this surface at the excited state case. Based on the here used model the obtained adsorption energy was 0.36 eV which is in excellent agreement with the reported experimental value. In the present work the C-O stretch IR frequencies are calculated which are 1366.53 and 1423.16 cm⁻¹. These results are in good agreement with the earlier reported works for the surface carbonaceous compounds, and oxygenated carbon species.     

Coverage effects on phenol adsorption on Si(1 0 0)2 × 1 as: A first principle calculation

We investigated the adsorption of a 6-dimers Si(1 0 0)2 × 1 surface as a function of coverage and adsorption type (molecular/dissociative) by first principle calculations. In particular, we performed calculations on models with 2, 3, 4 and 6 phenol molecules, corresponding to coverage Θ = 0.34, 0.5, 0.67 and 1. We found that total adsorption energy, when at least one phenol is in a molecular state is lower than the sum of the corresponding singly adsorbed molecules. The dissociative adsorption of multiple molecules, both in parallel and switched configuration is most favoured for a coverage Θ = 0.34 (2.6 eV per adsorbed molecule). This values decreases to 2.0 eV and remains constant till the coverage 1 is reached.The energy barrier for the molecular-to-dissociated transition of a phenol molecule, in presence of another dissociatively adsorbed molecule is ∼0.008 eV and it is similar to the value in case of single adsorption. Possible hydrogen displacements were also considered.     

Oxygen adsorption on a Mo2C(0 0 0 1) surface: Angle-resolved photoemission study

Oxygen adsorption on a C-terminated α-Mo₂C(0 0 0 1) surface has been investigated with Auger electron spectroscopy, low-energy electron diffraction, and angle-resolved photoemission spectroscopy utilizing synchrotron radiation. It is found that the oxygen atoms adsorb on the Mo atoms in the second layer forming a (1 × 1) orthorhombic periodicity. The oxygen adsorption induces a peculiar state around the Fermi level, which is observed at 0.4 eV in the normal-emission spectra. ARPES measurements show that the state is a partially occupied metallic state. The photoionization cross section of the state shows a maximum at the photon energy of 56 eV, which is assigned as originating from the resonance of the Mo 4d photoemission involving Mo 4p → 4d photoexcitation.