Theoretical study of cisplatin adsorption on silica

The adsorption of cisplatin and its complexes, cis-[PtCl(NH₃)₂]⁺ and cis-[Pt(NH₃)₂]²⁺, on a SiO₂(1 1 1) hydrated surface has been studied by the Atom Superposition and Electron Delocalization method. The adiabatic energy curves for the adsorption of the drug and its products on the delivery system were considered. The electronic structure and bonding analysis were also performed. The molecule-surface interactions are formed at expenses of the OH surface bonds. The more important interactions are the Cl-H bond for cis-[PtCl₂(NH₃)₂] and cis-[PtCl(NH₃)₂]⁺ adsorptions, and the Pt-O interaction for cis-[Pt(NH₃)₂]²⁺ adsorption. The Cl p orbitals and Pt s, p y d orbitals of the molecule and its complexes, and the s H orbital and, the s and p orbitals of the O atoms of the hydrated surface are the main contribution to the surface bonds.     

Hole concentration dependence of Mn eg orbital state in bilayer manganites studied by magnetic Compton profile measurement

Magnetic Compton profiles (MCP) have been measured in the [100], [110] and [001] directions on the single crystals of La_2−2xSr_1+2xMn₂O₇ (x=0.30, 0.35 and 0.42) at 10 K. The occupation numbers in t_2g and two e_g type orbitals (x²−y² and 3z²−r²) of Mn-3d state are evaluated from the line-shape analysis of MCP's in the [001] direction by using theoretical profiles derived from the ab initio calculations for (MnO₆)⁸⁻cluster. It has been found that the e_g state is dominated by the x²−y² type orbital at every hole concentration, x, and the 3z²−r² type orbital population decreases with increasing x. From the result, the connections of e_g orbital state with the electron correlation effect, exchange interactions, lattice distortion and electronic inhomogeneity are discussed.     

A study of TaxC1−x coatings deposited on biomedical 316L stainless steel by radio-frequency magnetron sputtering

In this paper, Ta_xC_1−x coatings were deposited on 316L stainless steel (316L SS) by radio-frequency (RF) magnetron sputtering at various substrate temperatures (T_s) in order to improve its corrosion resistance and hemocompatibility. XRD results indicated that T_s could significantly change the microstructure of Ta_xC_1−x coatings. When T_s was <150 °C, the Ta_xC_1−x coatings were in amorphous condition, whereas when T_s was ≥150 °C, TaC phase was formed, exhibiting in the form of particulates with the crystallite sizes of about 15-25 nm (T_s = 300 °C). Atomic force microscope (AFM) results showed that with the increase of T_s, the root-mean-square (RMS) values of the Ta_xC_1−x coatings decreased. The nano-indentation experiments indicated that the Ta_xC_1−x coating deposited at 300 °C had a higher hardness and modulus. The scratch test results demonstrated that Ta_xC_1−x coatings deposited above 150 °C exhibited good adhesion performance. Tribology tests results demonstrated that Ta_xC_1−x coatings exhibited excellent wear resistance. The results of potentiodynamic polarization showed that the corrosion resistance of the 316L SS was improved significantly because of the deposited Ta_xC_1−x coatings. The platelet adhesion test results indicated that the Ta_xC_1−x coatings deposited at T_s of 150 °C and 300 °C possessed better hemocompatibility than the coating deposited at T_s of 25 °C. Additionally, the hemocompatibility of the Ta_xC_1−x coating on the 316L SS was found to be influenced by its surface roughness, hydrophilicity and the surface energy.     

Microstructures, surface bonding states and room temperature ferromagnetisms of Zn0.95Co0.05O thin films doped with copper

Zn_0.95−xCo_0.05Cu_xO (ZCCO, where x = 0, 0.005, 0.01 and 0.015) thin films were deposited on Si (1 0 0) substrates by pulsed laser deposition technique. Crystal structures, surface morphologies, chemical compositions, bonding states and chemical valences of the corresponding elements for ZCCO films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). XRD and FESEM results indicate that crystallite sizes of the highly (0 0 2)-oriented ZCCO films slightly decrease with increasing Cu content. When the Cu content increases from 0 to 0.015, Zn 2p_3/2, Co 2p, Cu 2p_3/2 and O 1s peaks of the ZCCO film shift towards higher or lower binding energy regions, and the reasons for these chemical shifts are investigated by fitting the corresponding XPS narrow-scan spectra. Both in-plane and out-of-plane magnetization-magnetic field hysteresis loops of the ZCCO films reveal that all the films have room temperature ferromagnetisms (RTFMs). The conceivable origin of the RTFM is ascribed to the combined effects of the local structural disorder resulted from (Co²⁺, Cu²⁺, Cu¹⁺)-cations which substitute Zn²⁺ ions in the ZnO matrices, ferromagnetic coupling between coupled dopant atoms caused by Co²⁺ (3d⁷4s⁰) and Cu²⁺ (3d⁹4s⁰) spin states, and exchange interactions between the unpaired electron spins originating from lattice defects induced by Cu doping in the Zn_0.95Co_0.05O matrices.     

Kinetics for the reaction of phenyl radical with phenylacetylene and styrene

The kinetics for the reactions of C₆H₅ with phenylacetylene and styrene have been measured by CRDS in the temperature range 297-409 K under an Ar pressure of 3.6 Torr. The total rate constants can be given by the following Arrhenius expressions (in units of cm³ mol⁻¹ s⁻¹): k₁(C₆H₅ + C₆H₅C₂H) = 10^13.0±0.1exp [−(2430 ± 150)/RT] and k₂(C₆H₅ + C₆H₅C₂H₃) = 10^13.3±0.1 exp [−(2570 ± 180)/T]. Additional DFT and MP2 calculations have been carried out to assist our interpretation of the measured kinetic data. The addition of C₆H₅ to the terminal CH_x (x = 1 or 2) sites is predicted to be the dominant channel for both reactions. The calculated bimolecular rate constants are in reasonable agreement with experimental values for the temperature range studied.     

The adsorption of methylcyclopentane on Pt(1 1 1)

The adsorption of methylcyclopentane (MCP) on Pt(1 1 1) has been studied using the atom superposition and electron delocalization (ASED-MO) molecular orbital method. Results show a weak interaction with the metallic surface. The adsorption energy is rather independent of the adsorption site coordination number. We find that Pt 6s, 6p_z and 5d_z² orbitals are involved in the bonding with MCP. There is no bonding between the carbon ring and the Pt surface and the interaction comes from the hydrogen atoms to the surface.     

Annealing effects on the bonding structures, optical and mechanical properties for radio frequency reactive sputtered germanium carbide films

The effects of thermal annealing in vacuum on the bonding structures, optical and mechanical properties for germanium carbide (Ge_1−xC_x) thin films, deposited by radio frequency (RF) reactive sputtering of pure Ge(1 1 1) target in a CH₄/Ar mixture discharge, are investigated. We find that there are no significant changes in the bonding structure of the films annealed below 300 °C. The fraction of Ge-H bonds for the film annealed at temperatures (T_a) above 300 °C decreases, whereas that of C-H bonds show a decrease only when T_a exceeds 400 °C. The out-diffusion of hydrogen promotes the formation of Ge-C bonds at T_a above 400 °C and thus leads to a substantial increase in the compressive stress and hardness for the film. The refractive indices and optical gaps for Ge_1−xC_x films are almost constant against T_a, which can be ascribed to the unchanged ratios of Ge/C and sp²-C/sp³-C concentrations. Furthermore, we also find that the excellent optical transmission for an antireflection Ge_1−xC_x double-layer film on ZnS substrate is still maintained after annealing at 700 °C.     

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

We have deposited germanium carbide (Ge_1−xC_x) films on Si(1 0 0) substrate via radio-frequency (RF) reactive magnetron sputtering in a CH₄/Ar mixture discharge, and explored the effects of carbon content (x) on the chemical bonding and hardness for the obtained films. We find that x significantly influences the chemical bonding, which leads to a pronounced change in the hardness of the film. To reveal the relationship between the chemical bonding and hardness, first-principles calculations have been carried out. It is shown that as x increases from 0 to 0.33, the fraction of sp³ C-Ge bonds in the film increases at the expense of Ge-Ge bonds, which promotes formation of a strong covalently bonded network, and thus enhances the hardness of the film. However, as x further increases from 0.33 to 0.59, the fraction of sp³ C-Ge bonds in the film gradually reduces, while that of sp³ C-H and graphite-like sp² C-C bonds increases, which damages the compact network structure, resulting in a sharp decrease in the hardness. This investigation suggests that the medium x (0.17<x<0.40) is most favorable to the preparation of hard Ge_1−xC_x films due to the formation of dominant sp³ C-Ge bonds.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Microwave structural studies of organoselenium compounds 1. Microwave spectra, molecular structure, and methyl barrier to internal rotation of dimethyl diselenide

The rotational spectra of nine isotopomers of dimethyl diselenide, CH₃SeSeCH₃, have been measured with a molecular-beam Fourier transform microwave spectrometer. The spectra were complex due to the presence of many isotopomers in natural abundance and the splitting caused by the interactions with two methyl internal rotors. The spectra were assigned and fit to experimental precision to an effective rotational Hamiltonian for molecules with two periodic internal motions. The spectra of the symmetric isotopomers are consistent with a C₂ equilibrium structure. The rotational constants were used to determine the r_s structure of the C-Se-Se-C frame with the results r(SeSe)=2.306(3) Å, r(SeC)=1.954(6) Å, ?(CSeSe)=99.8(2)°, ?(CSeSeC)=85.2(1)°. A barrier to internal rotation of the methyl groups of 395 ± 2 cm⁻¹ was derived from the internal rotation splittings.     

Ethylene adsorption on the Pt-Cu bimetallic catalysts. Density functional theory cluster study

The adsorption of ethylene on Cu₁₂Pt₂ clusters has been studied within the density functional theory (DFT) approach to understand the high ethylene selectivity of Cu-rich Pt-Cu catalyst particles in the reaction of hydrogen-assisted 1,2-dichloroethane dechlorination. The structural parameters for Cu₁₂Pt₂ clusters with D_4h, D_2d, and C_3v symmetry have been calculated. The relative stability of the isomeric Cu₁₂Pt₂ clusters follows the order: C_3v > D_2d > D_4h. Each isomer has an active site for ethylene adsorption that consists of a single Pt atom surrounded by Cu atoms. The interaction of ethylene with the active site yields a π-C₂H₄ adsorption complex. The strongest π-C₂H₄ complex forms with the cluster of C_3v symmetry; the bonding energy, ΔE_π(C₂H₄), is −15.6 kcal mol⁻¹. The bonding energies for the π-C₂H₄ complex with Cu₁₄ and Pt₁₄ clusters are −6.5 and −18.8 kcal mol⁻¹, respectively.The addition of Pt to Cu modifies the valence spd-band of the cluster as compared to a Cu₁₄ cluster. The DOS near the Fermi level increases when C₂H₄ adsorbs on the Cu₁₂Pt₂ cluster. As well, the center of the d-band shifts toward lower binding energies. Ethylene adsorption also induces a number of states below the d-band. These states correspond to those of gas-phase C₂H₄.The vibrational frequencies of C₂H₄ adsorbed on the clusters of D_4h and C_3v symmetry have been calculated. The phonon vibrations occur below 250 cm⁻¹. The intense bands around 200 cm⁻¹ are attributed to stretching vibrations of the Pt-Cu bonds normal to the cluster surface. The stretching vibrations of the Pt-C bonds depend on the local structure of the active site: ν_s(Pt-C) = 268 cm⁻¹ and ν_as(Pt-C) = 357 cm⁻¹ for the cluster of the D_4h symmetry; ν_s(Pt-C) = 335 cm⁻¹ and ν_as(Pt-C) = 397 cm⁻¹ for the cluster of the C_3v symmetry. Bands in the range of 800-3100 cm⁻¹ are attributed to vibrations of the adsorbed C₂H₄ molecule. The signature frequencies of the π-C₂H₄ adsorption complex are the δ_s(CH₂) deformation vibration at ∼1200 cm⁻¹ and the ν(C-C) stretching vibration at ∼1500 cm⁻¹. These vibration are absent for di-σ-C₂H₄ adsorption complexes.     

Swift heavy ion induced modifications in cobalt doped ZnO thin films: Structural and optical studies

Modifications in the structural and optical properties of 100 MeV Ni⁷⁺ ions irradiated cobalt doped ZnO thin films (Zn_1−xCo_xO, x = 0.05) prepared by sol-gel route were studied. The films irradiated with a fluence of 1 × 10¹³ ions/cm² were single phase and show improved crystalline structure with preferred C-axis orientation as revealed from XRD analysis. Effects of irradiation on bond structure of thin films were studied by FTIR spectroscopy. The spectrum shows no change in bonding structure of Zn-O after irradiation. Improved quality of films is further supported by FTIR studies. Optical properties of the pristine and irradiated samples have been determined by using UV-vis spectroscopic technique. Optical absorption spectra show an appreciable red shift in the band gap of irradiated Zn_1−xCo_xO thin film due to sp-d interaction between Co²⁺ ions and ZnO band electrons. Transmission spectra show absorption band edges at 1.8 eV, 2.05 eV and 2.18 eV corresponding to d-d transition of Co²⁺ ions in tetrahedral field of ZnO. The AFM study shows a slight increase in grain size and surface roughness of the thin films after irradiation.     

Configuration dependence of photon stimulated ion desorption from methyl ester compounds induced by core excitation

Photon stimulated ion desorption (PSID) from methyl ester terminated self-assembled monolayer (MHDA-SAM, HS(CH₂)₁₅COOCH₃) and methyl mercaptoacetate (MA, HSCH₂COOCH₃) on Ag has been investigated using soft X-ray in the C and O K-edge regions. In MHDA-SAM on Ag, site-selective ion desorption has been clearly observed at resonant core excitations of C_1s, O_1s(OCH₃) → σ^∗(OCH₃) and O_1s(OCH₃) → σ^∗(COCH₃). Ion intensity in MA on Ag is obviously reduced for (n = 1-3) at C_1s, O_1s(OCH₃) → σ^∗(OCH₃) excitations, and no site-selective reaction at O_1s(OCH₃) → σ^∗(COCH₃) excitations has been observed. These reactions may be influenced by configurational difference of reactive sites. It is suggested that surface effects on the selective reaction due to positioning methyl ester group near the surface plays an important role.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.     

Optical and electrical properties of nonstoichiometric a-Ge1−xCx films prepared by magnetron co-sputtering

Amorphous non-hydrogenated germanium carbide (a-Ge_1−xC_x) films have been prepared by magnetron co-sputtering method in a discharge of Ar. The dependence of structural and chemical bonding properties on the Ge/C ratio (R) has been investigated by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The relationship between the chemical bonding and the optical and electrical properties of the a-Ge_1−xC_x films has also been explored. It has been shown that the refractive index of the films increases from 2.9 to 4.4 and the optical gap decreases from 1.55 to 1.05 eV as R increases from 1.22 to 5.67. Moreover, the conductivity σ increases clearly and the activation energy E_a decreases with the increasing R owing to the reduction of sp³ CGe bonds. The a-Ge_1−xC_x films exhibit refractive index and optical gap values changing with x in a wide range, which may make a-Ge_1−xC_x films good candidates in the fields of protection coatings for IR windows and electronic devices.     

Growth and characterization of polycrystalline Ge1−xCx by reactive pulsed laser deposition

Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T_s, on C incorporation to substitutional sites (x) in Ge_1−xC_x was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 °C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T_s of 350 °C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T_s from 250 °C to 350 °C. At T_s = 400 °C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T_s being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T_s plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.     

Galvanomagnetic properties of air-stable and highly conductive potassium-intercalated graphite sheet

Magnetoresistance and Hall coefficient of air-stable potassium-intercalated graphite sheets (hereafter abbreviated as K-PGS) were determined at room temperature. The magnitude of the magnetoresistance and the absolute value of Hall coefficient of K-PGS decreased with increasing potassium content of K-PGS, n_K/n_C. Two-carrier model was used for calculating carrier density and mobility. The electron density increased with increasing n_K/n_C: 3.07×10²⁰ cm⁻³ (n_K/n_C=0.005), 5.67×10²⁰ cm⁻³ (n_K/n_C=0.008) and 6.40×10²⁰ cm⁻³ (n_K/n_C=0.011). The value of the electron density of K-PGS with n_K/n_C=0.011 (nominal composition KC₉₁) was about 80% of the reported value, 7.8×10²⁰ cm⁻³, for KC₄₈ (n_K/n_C=0.021) prepared from HOPG (highly oriented pyrolytic graphite). The mobility decreased with increasing n_K/n_C: 2.11×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.005), 1.42×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.008) and 1.34×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.011). The value of the mobility of K-PGS with n_K/n_C=0.011 was about 60% of the reported value (2300 cm² V⁻¹ s⁻¹) for KC₄₈ prepared from HOPG.     

Thermal decomposition of toluene: Overall rate and branching ratio

The two-channel thermal decomposition of toluene, C₆H₅CH₃ → C₆H₅CH₂ + H (1) and C₆H₅CH₃ → C₆H₅ + CH₃ (2), was investigated in shock tube experiments over the temperature range of 1400-1780 K at a pressure of 1.5 (±0.1) bar. Rate coefficients for reactions (1) and (2) were determined by monitoring benzyl radical (C₆H₅CH₂) absorption at 266 nm during the decomposition of toluene diluted in argon and modeling the temporal behavior of the benzyl concentration with a kinetic model. The first-order rate coefficients determined at a pressure of 1.5 bar are expressed by k₁(T) = 2.09 × 10¹⁵ exp (−87510 [cal/mol]/RT) [s⁻¹] and k₂(T) = 2.66 × 10¹⁶ exp (−97880 [cal/mol]/RT) [s⁻¹]. The resulting branching ratio, k₁/(k₁ + k₂), ranges from 0.8 at 1350 K to 0.6 at 1800 K.     

Control of mixed protonic and electronic conductivity by mixing rare-earth ortho-borates

In order to develop mixed protonic and electronic conductors, we proposed a novel concept for material design that enables to control partial conductivities by fabricating solid solutions of protonic and electronic conductors. In this work, Sr-doped LaBO₃ and Sr-doped CeBO₃ were chosen as model compounds conducting protons and electron holes, respectively. Solid solutions of the above borates, Sr-doped La_1 − xCe_xBO₃, were prepared, and their electrical conductivities were investigated in 8.5 × 10²-4.2 × 10³ Pa of p(H₂O) and 1.0 × 10-1.0 × 10⁵ Pa of p(H₂) at 1073 K. From the experimental results of the gas partial pressure dependences of the conductivities, major charge carrier species were identified as a function of x. It was found that proton was the major charge carrier when x < 0.2 while the contribution of the electron hole conduction became remarkable as x increased above 0.2. The contribution of the electron hole conduction can be interpreted by the percolation model.     

Influence of carbon concentration on structural, magnetic and electrical transport properties for antiperovskite compounds AlCxMn3

The structural, magnetic and transport properties of the antiperovskite AlC_xMn₃ (1.0≤x≤1.4) are investigated. It is found that the lattice parameter a increases monotonously with nominal carbon concentration x. The Curie temperature T_C increases with increasing x from 1.0 to 1.1 and then decreases with further increasing x. The highest T_C value is 364 K, about 70 K higher than that of stoichiometric AlCMn₃ reported previously. This may be attributed to a competition between the lattice expansion and the strong Mn 3d-C 2p hybridization. Below 100 K, the resistivity can be well described as ρ(T)=ρ₀+AT², corresponding to the electron-electron scattering. A increases with x, suggesting certain changes in the electronic structure, e.g. carrier density. Above 250 K, all ρ(T) curves depart from the linear dependence on temperature and seem to take on a tendency towards saturation.