Optical characteristics of nickel and boron carbonitride films in Si(100)/Ni/BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> structures

The optical characteristics of nickel films deposited on Si(100) substrates by vacuum thermal evaporation have been studied. The thickness and optical constants of the films are determined using monochromatic zero ellipsometry, while the inverse problems are solved within the three-layer optical model of the samples. It is shown that thermal annealing leads to a change in the optical constants of nickel films in the heating-temperature range of 500–900°C. Boron carbonitride layers deposited on silicon substrates with a nickel sublayer are analyzed within multilayer optical models, which make it possible to determine the refractive index and absorption coefficient distributions along the thickness of the synthesized Si(100)/Ni/BC _x N _y structure.     

Characterization of CN<Subscript>x</Subscript>/SiO<Subscript>y</Subscript> films prepared by the inductively coupled RF discharge

Hard films were deposited in an inductively coupled rf discharge at the frequency of 3.5MHz by the chemichal transport of carbon from the graphite target in nitrogen atmosphere combined with the evaporation of a quartz tube. The nitrogen flow varied from 1.0 to 4.0 sccm. The supplied rf power was in the range of 3 kW. Silicon substrates were placed on the graphite holder whose temperature was 750°C. The films had the hardness of 35GPa maximum and they showed high elastic recovery up to 88%, good fracture toughness and adhesion to the substrate. The hardness of deposited films increases with increasing CN_x/SiO_y ratio. This ratio is influenced by the deposition time.     

Improving the gas barrier properties of a-SiOxCyNz film at low temperature using high energy and suitable nitrogen flow rate

Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (～80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiO_xC_yN_z film. The a-SiO_xC_yN_z films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiO_xC_yN_z film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR).     

Electrical and optical properties of pulse plated CdS<Subscript><Emphasis Type="BoldItalic">x</Emphasis></Subscript>Te<Subscript>1-<Emphasis Type="BoldItalic">x</Emphasis></Subscript> films

Thin films of CdS_xTe_1-x were deposited by the pulse electrodeposition technique using cadmium sulfate, sodium thiosulfate, and tellurium dioxide on titanium and conducting glass substrates. Structural studies indicated the formation of polycrystalline films possessing hexagonal structure. The resistivity varies from 53 Ω cm to 8 Ω cm as the stochiometric coefficient “x” value decreases from 1 to 0. The carrier concentration increases with CdTe concentration. It is observed that as the post-heat treatment temperature increases, the photosensitivity also increases. It is observed that a post-heat treatment temperature of 550 °C results in high photosensitivity as well as low light resistance. The optical constants, refractive index (n) and extinction coefficient (k) were evaluated from the transmission spectra of the films of different composition.     

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid.     

Temperature dependent surface and spectral modifications of nano V<Subscript>2</Subscript>O<Subscript>5</Subscript> films

Nanocrystalline V₂O₅ films have been deposited on glass substrates at 300°C substrate temperature using thermal evaporation technique and were subjected to thermal annealing at different temperatures 350, 400, and 550°C. X-ray diffraction (XRD) spectra exhibit sharper and broader characteristic peaks respectively indicating the rearrangement of nanocrystallite phases with annealing temperatures. Other phases of vanadium oxides started emerging with the rise in annealing temperature and the sample converted completely to VO₂ (B) phase at 550°C annealing. FESEM images showed an increase in crystallite size with 350 and 400°C annealing temperatures followed by a decrease in crystallite size for the sample annealed at 550°C. Transmission spectra showed an initial redshift of the fundamental band edge with 350 and 400°C while a blue shift for the sample annealed at 550°C, which was in agreement with XRD and SEM results. The films exhibited smart window properties as well as nanorod growth at specific annealing temperatures. Apart from showing the PL and defect related peaks, PL studies also supported the observations made in the transmission spectra.     

Interfacial structures of LaAlO<Subscript>3</Subscript> films on Si(100) substrates

This paper investigates the interfacial characteristics of LaAlO₃ (LAO) and LaAlO_xN_y (LAON) films deposited directly on silicon substrates by the pulsed-laser deposition technique. High-resolution transmission electron microscopy (HRTEM) pictures indicate that an interfacial reaction between LAO and Si often exists. The interfacial layer thickness of LAO films deposited in a nitrogen ambient atmosphere is smaller than that of LAO films deposited in an oxygen ambient atmosphere. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to study the composition of the interfacial layer. The shift of the La 3d photoelectron peak to a higher binding energy compared to LaAlO₃, the shift of the Al 2p peak to a higher binding energy compared to LaAlO₃, the shift of the Si 2p peak to a lower binding energy compared to SiO₂ and the intermediate location of the O 1s peak compared to LaAlO₃ and SiO₂ indicate the existence of a La–Al–Si–O bonding structure, which was also proved by the AES depth profile of LAO films. It can be concluded that the interfacial layer is not simply SiO₂ but a compound of La–Al–Si–O. PACS 77.84.Bw; 77.84.-s; 77.55.+f     

Carbon-free SiO<Subscript>x</Subscript> films deposited from octamethylcyclotetrasiloxane (OMCTS) by an atmospheric pressure plasma jet (APPJ)

The deposition of carbon-free, silicon oxide (SiO_x) films with a non-thermal, RF capillary jet at 27.12 MHz at normal pressure is demonstrated. The gas mixture for film deposition is constituted of argon, oxygen and small admixtures of octamethylcyclotetrasiloxane (Si₄O₄C₈H₂₄, 0.4 ppm). Surface analysis of the deposited films reveals their exceptionally low carbon content. The XPS atom percentage stays at 2% and less, which is near detection limit. The parametric study reported here focuses on the optimization of the deposition process with regard to the chemical and morphological surface properties of the coating by varying oxygen feed gas concentration (0–0.2%) and substrate temperature (10–50 °C).     

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

ZnO thin films were first prepared on Si(111) substrates using a radio frequency magnetron sputtering system. Then the as-grown ZnO films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000°C , respectively. The morphologies of ZnO films were studied by an atom force microscope (AFM). Subsequently, GaN epilayers about 500 nm thick were deposited on the ZnO buffer layers. The GaN/ZnO films were annealed in NH₃ ambient at 900°C. The microstructure, morphology and optical properties of GaN films were studied by x-ray diffraction (XRD), AFM, scanning electron microscopy (SEM) and photoluminescence (PL). The results are shown, their properties having been investigated particularly as a function of the ZnO layers. For better growth of the GaN films, the optimal annealing temperature of the ZnO buffer layers was 900°C.     

Phase transitions in the CN<Subscript>x</Subscript>-Co system induced by changes in the film growth temperature

The structures of amorphous CN_x-Co films grown at different temperatures (T _s = 200–365°C) are studied by X-ray diffraction. As the growth temperature increases above T _s = 200°C, a concentration phase transition is found to occur in the amorphous state; this transition is related to a change in the major portion of carbon or cobalt in the structure of the cluster films. At T _s = 365°C, a disorder-order phase transition, which is accompanied by the transition from the amorphous to crystalline state, occurs in the films.     

Thermostable photocatalytically active TiO<Subscript>2</Subscript> anatase nanoparticles

Anatase is the low-temperature (300–550 °C) crystalline polymorph of TiO₂ and it transforms to rutile upon heating. For applications utilizing the photocatalytic properties of nanoscale anatase at elevated temperatures (over 600 °C) the issue of phase stabilisation is of major interest. In this study, binary TiO₂/SiO₂ particles were synthesized by a flame aerosol process with TiCl₄ and SiCl₄ as precursors. The theoretical Si/Ti ratio was varied in the range of 0.7–1.3 mol/mol. The synthesized TiO₂/SiO₂ samples were heat treated at 900 and 1,000 °C for 3 h to determine the thermostability of anatase. Pyrogenic TiO₂ P25 (from Evonik/Degussa, Germany) widely applied as photocatalyst was used as non-thermostabilized reference material for comparison of photocatalytic activity of powders. Both the non-calcinated and calcinated powders were characterized by means of XRD, TEM and BET. Photocatalytic activity was examined with dichloroacetic acid (DCA) chosen as a model compound. It was found that SiO₂ stabilized the material retarding the collapse of catalyst surface area during calcination. The weighted anatase content of 85% remains completely unchanged even after calcination at 1,000 °C. The presence of SiO₂ layer/bridge as spacer between TiO₂ particles freezes the grain growth: the average crystallite size increased negligibly from 17 to 18 nm even during the calcination at 1,000 °C. Due to the stabilizing effect of SiO₂ the titania nanoparticles calcinated at 900 and 1,000 °C show significant photocatalytic activity. Furthermore, the increase in photocatalytic activity with calcination temperature indicates that the titania surface becomes more accessible either due to intensified cracking of the SiO₂ layer or due to enhanced transport of SiO₂ into the necks thus releasing additional titania surface.     

Study of the features of BaF<Subscript>2</Subscript> heteroepitaxy on CaF<Subscript>2</Subscript>/Si(100) layers obtained in the high-temperature growth mode

The surface morphology of BaF₂ epitaxial films grown by MBE (molecular beam epitaxy) in various modes on the surface of CaF₂/Si(100) is investigated by AFM. The CaF₂ layers on Si(100) are obtained in the high-temperature growth mode (Т _S = 750°C). It is shown that the epitaxy of BaF2 at a temperature of 600°C at the initial stage of growth leads to the formation of defects such as perforations in the epitaxial film, while epitaxy at a temperature of 750°C provides a defect-free film with a surface morphology suitable for the subsequent growth of semiconductors of IV–VI type and solid solutions based on them.     

Time evolution of the microstructures of LaAlO3 thin films grown on Si substrates

The structure and stability of amorphous LaAlO₃ thin films deposited on Si substrates were investigated by an X-ray reflectivity technique. The results show that the film/substrate interface contains a La_xAl_yO_zSi layer and a SiO_x layer. X-ray reflectivity profiles showed a continuous change after the films were exposed to ambient air for six months at room temperature. The X-ray reflectivity simulations suggest a diffusion of La and Al (mostly La) from the LaAlO₃ layer to the La_xAl_yO_zSi layer. This process stopped after about six months, and then the films reached a relative equilibrium state. Moreover, post-air-exposure annealing at 300 °C in air atmosphere could not change the final distributions of La and Al along the normal to the film’s substrate. On the other hand, the leakage-current density slightly decreases after annealing at 300 °C, which might be caused by the decrease of oxygen vacancies in the films. PACS 61.10.Kw; 77.55.+f; 68.60.Dv     

An investigation into ultra-thin pseudobinary oxide (TiO<Subscript>2</Subscript>)<Subscript>x</Subscript>(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>1-x</Subscript> films as high-<Emphasis Type="Italic">k</Emphasis> gate dielectrics

As potential gate dielectric materials, pseudobinary oxide (TiO₂)_x(Al₂O₃)_1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 °C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO₂ and Al₂O₃. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO₂)_0.4(Al₂O₃)_0.6 film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications. PACS 77.55.+f; 73.40.Qv; 81.15.Fg     

Highly (100) oriented Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> films grown on amorphous substrates by pulsed laser deposition

Pb(Zr_0.52Ti_0.48)O₃ (PZT)/LaNiO₃ (LNO) thin films with highly (100) out of plane orientation were produced on SiO₂/Si(100) and alkaline earth aluminosilicate glass substrates by pulsed laser deposition (PLD). Orientations of both PZT and LNO films were evaluated using X-ray diffraction. The pure (100)-oriented PZT/LNO films were obtained under optimized deposition conditions. Time of flight-secondary ion mass spectrometry analysis showed that LNO could effectively block interdiffusion between the PZT films and the substrates. Fairly smooth surfaces of the PZT films with roughness of about 4 nm were observed using an atomic force microscope. Cross sectional examination revealed that the films grew in columnar grains. The PZT films grown on both SiO₂/Si and glass substrates demonstrated very good ferroelectric characteristic at room temperature with remnant polarization of up to 26 μC/cm². PACS 79.20.DS; 77.84.DY; 78.70.Ck     

Synthesis and characterization of nanostructured (Pb1− x Sr x )TiO3 thin films by a modified chemical route

The coating solutions of nanostructured (Pb_{1– x} Sr _x )TiO₃ (PST) thin films have been prepared by the sol–gel combined metallo-organic decomposition method. The coating solutions were deposited on Pt/Ti/SiO₂/Si substrates using a spin-coating technique with spinning speed of 4300 rpm and annealed at 650°C. The effect of Sr content in reducing the grain size and tetragonal distortion of PST films has been studied. The optimum conditions for crystalline phase formation in the films have been analyzed by thermogravimetric, differential thermal analysis and Fourier transform infrared spectroscopy. The phase and microstructure of the films were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD pattern shows that the PST thin films are crystallized into tetragonal structures without any impurity phase and the distortion ratio reduces with increasing Sr concentration. The AFM results indicate an increase in grain size with increasing annealing temperature of the film and reduction in grain size with increasing Sr concentration.     

Texture control and its impact on the properties of SrBi2Ta2O9 thin films prepared by pulsed laser deposition

SrBi₂Ta₂O₉ (SBT) ferroelectric thin films with different preferred orientations were deposited by pulsed laser deposition (PLD). Several methods have been developed to control the preferred orientation of SBT thin films. For SBT films deposited directly on Pt/TiO₂/SiO₂/Si substrates and in situ crystallized at the deposition temperature, the substrate temperature has a significant impact on the orientation and the remnant polarization (Pr) of the films; a higher substrate temperature benefits the formation of (115) texture and larger grain size. The films deposited on Pt/TiO₂/SiO₂/Si substrates at 830 °C are (115)-oriented and exhibit 2Pr of 6 μC/cm². (115)- and (200)-predominant films can be formed by using a La_0.85Sr_0.15CoO₃ (LSCO) buffer layer or by annealing amorphous SBT films deposited on Pt/TiO₂/SiO₂/Si substrates at 450 °C using rapid thermal annealing (RTA). These films exhibit good electric properties; 2Pr of the films are up to 12 μC/cm² and 17 μC/cm², respectively. The much larger 2Pr of the films deposited on the LSCO buffer layer and of the films obtained by RTA than 2Pr of the films deposited on Pt/TiO₂/SiO₂/Si substrates at 830 °C is attributed to a stronger (200) texture. Received: 30 January 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Effect of substitution of vanadium on the structure and electrical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

The ferroelectric and dielectric properties of Bi_4-xLa_xTi₃O₁₂ (BLT) and Bi_4-xLa_xTi_2.97V_0.03O₁₂ (BLTV) thin films deposited on (111)Pt/Ti/SiO₂/Si substrates using a chemical solution method were investigated. The BLTV thin films showed a larger remanent polarization (9.6 C/cm²) than the BLT thin films (6.5 C/cm²), while the coercive field for both thin films was nearly the same. The capacitance of the films as a function of a small ac driving field was measured, and the data were processed using Rayleighs law. The results show that the Rayleigh constant of the BLT films was smaller than that of the BLTV films, indicating that the defect concentration was lower in the latter case. The superior ferroelectricity of the BLTV films was attributed to a decrease of both the (001) orientation and the defect concentration. PACS 77.80.Bh; 77.55.+f     

Preparation and investigation of composite SiO<Subscript>2</Subscript>-TiO<Subscript>2</Subscript> films

SiO₂-TiO₂ films [Si:Ti = 1:(0.06–2.3)] are obtained by the sol-gel method. The structural and photoluminescent properties of the films and powders heat-treated at different temperatures are studied. It is shown that after 700°C the composite consists of TiO₂ crystallites that are structurally similar to anatase and distributed in an amorphous SiO₂ matrix. The photoluminescence spectra have maxima at 450–500 nm. The photoluminescence intensity depends on the treatment temperature and TiO₂ content. __________ Translated from Zhurnal Prikladnoi Spektroskopii Vol. 74, No. 3, pp. 357–361, May–June, 2007.     

Elastic instability of the nano-structured state as an intrinsic probe to study the early formation stages of sol–gel derived (Pb<Subscript>1-x</Subscript>Ca<Subscript>x</Subscript>)TiO<Subscript>3</Subscript> thin films

A novel method to investigate the early formation stages of polycrystalline (Pb_1-xCa_x)TiO₃ (PCT) perovskite films by means of traditional Brillouin and micro-Brillouin spectroscopy (BS, mBS) is described in the present work. The films were prepared by chemical solution deposition (CSD) onto oxidized (100)Si substrates and treated at temperatures between 350–650 °C by rapid thermal processing (RTP). The elastic instability observed by Brillouin spectroscopy at the nano-structured state of the PCT films was used here to determine their crystallization temperatures. Coexistence of different nanocrystalline phases (e.g., pyrochlore, perovskite) in the films could also be detected by this technique. The reliability of these results is demonstrated by complementary information obtained by X-ray diffraction (XRD) and scanning force microscopy (SFM). The effects of the annealing temperature and of the Ca²⁺ content on the crystallization process of these films are also discussed. PACS 78.35.+c; 77.84.-s; 61.82.Rx