CFBR-Ⅱ堆脉冲状态反应性温度系数测量

反应性温度系数是脉冲堆重要参数之一, 采用一种特殊的方法测量了脉冲状态反应性温度系数。 把脉冲的全过程分为峰和坪两个过程, 根据Fuchs-Hansen模型知道脉冲峰过程的反应性减小量为系统初始超瞬发反应性的2倍, 采用脉冲波形去坪的方法分离出峰过程贡献的温升, 由此得到CFBR-Ⅱ堆的脉冲反应性温度系数αT=-0.00202 $/K。 Reactivity temperature coefficient is one of important parameters of burst reactor. The methods of measuring the coefficient were introduced and analyzed. The whole process of burst is split into “peak” process and “tail” process. Reactivity reduction is twice as large as initial excess reactivity in “peak” process from Fuchs Hansen model. Increment of temperature induced by “peak” process was got through removing “tail”. So we deduced reactivity temperature coefficient of CFBR-Ⅱ αT=-0.00202 $/K.     

Time-dependent triplet correlations in dense nitrogen gas

The inelastic neutron scattering cross section for dense nitrogen gas at several pressures near 240 atmospheres and room temperature has been measured in the region of the first diffraction peak. The Van Hove self-correlation function is calculated from models and subtracted from these cross sections to yield ?S _d(Q, ω)/?p. This derivative is related to an integral over the time-dependent triplet correlation function and models for the triplet function are tested. A simple model, based on pair functions, gives moderate agreement.     

Mean spherical model-structure of liquid argon

A new formulation forS(k), the structure factor, has been obtained, treating the square-well potential as a perturbation on the hard-core in the mean spherical model approximation. The potential parameters have been varied not only to get a satisfactory peak height at the fitted temperature but also over a wide range of temperatures and densities. The agreement between the computed and experimental structure factor values shows that the representation of the attractive tail by a square-well potential yields a satisfactory method in understanding the structure of liquid argon.     

Exact relations for a strongly interacting fermi gas from the operator product expansion

The momentum distribution in a Fermi gas with two spin states and a large scattering length has a tail that falls off like 1/k4 at large momentum k, as pointed out by Tan. He used novel methods to derive exact relations between the coefficient of the tail in the momentum distribution and various other properties of the system. We present simple derivations of these relations using the operator product expansion for quantum fields. We identify the coefficient as the integral over space of the expectation value of a local operator that measures the density of pairs.     

Excitonic absorption and Urbach's tail in bismuth sulfide single crystals

The absorption coefficient of bismuth sulfide single crystals has been measured through more than four orders of magnitude and in the range of energies from 1.25 to 1.70 eV. A detailed study as a function of temperature has been carried out from 29 to 300 K. An Urbach tail for low values of absorption has been found. This tail and its temperature evolution fit the expression for ionic materials. An excitonic region appears at low temperature and the shape of the exciton peak is Gaussian, which corresponds to a strong exciton-phonon coupling. The exciton binding energy is estimated (28±3 meV) and then the energy gap at 29 K is obtained (E _g =1.523±0.003 eV). The fundamental electronic transition has been found to be a strongly anisotropic allowed direct transition. From reflectivity measurements a localized level at 1.361 eV at 29 K has been found. The change of the gap with temperature is interpreted through an electron-phonon mechanism.     

A note on Kahler potential of charged matter in F-theory

We study the Kahler potential of charged matter fields, whose profiles have a peak on their matter curve — on an “intersection” of 7-branes, in an F-theory compactification. It is shown that the Kahler potential is exactly given by the integral over the matter curve, but not by the integral over the whole GUT surface of 7-branes.     

Hot electrons and exciton-electron collision in GaAs under external electric field

The emission due to free exciton-electron collision has been investigated in relatively high purity n-GaAs under the external electric field. With increasing electric field, the emission peak shifts to lower energy while the higher energy side of the peak broadens. The emission spectra were also compared with the theory. From the higher energy tail, we estimated the electron temperature as a function of the electric field.     

紫外辐射加速老化高温硫化硅橡胶的X射线光电子能谱研究

高温硫化硅橡胶具有优良的电气性能、机械性能、憎水性而广泛应用于特高压输电线路,但亦会受外界环境的影响而老化,其抗紫外老化性能受到关注。课题组模拟户外紫外辐射环境,设计搭建了可调式紫外辐射加速老化试验箱,对A、B两个厂家的高温硫化硅橡胶样品进行了紫外辐射(0,500和1 000 h)加速老化实验,重点对辐射前后的试样进行X射线光电子能谱全谱扫描和窄区谱分析、确定元素化学位移及相对含量,分析紫外辐射对高温硫化硅橡胶表面化学态的影响,进而判断紫外辐射加速高温硫化硅橡胶老化机制。结果表明：高温硫化硅橡胶主要元素为O_1S,C_1S,Si_2p,其中O_1S主要以O-Si-O（532.4 eV）的形式存在,紫外辐射后,拟合分峰观察到534 eV的-OH的小峰,积分面积随辐照时间延长而增加;C_1S为C-H,C-C（284.8 eV）或C-O（286.3 eV）,随着辐射时间的延长,C-H和C-C结合能峰积分面积减小,C-O结合能峰的积分面积略微增加;Si_2p为Si-C（102.39 eV）,紫外辐射后新增SiO_x（x=3～4）结合能峰（103.6 eV）且积分面积随辐射时间延长而增加。分析认为紫外辐射加速老化的机理是紫外线切断硅橡胶中键能较低的部分Si-C,C-C和C-H键,裂解后的自由基可相互结合发生交联反应形成SiO_x（x=3～4）;辐射产生高活性的臭氧氧化自由基生成-COOH。XPS技术能够探究高温硫化硅橡胶的表面化学态从而促进其老化机理的研究。     

Photoenhancement of the photoconductivity (PC) of electron irradiated semiconducting diamond

The spectrum of the non-enhanced PC of electron irradiated semiconducting diamond extends from the UV towards the visible and near infrared. It's long wavelength tail was found in the present work to exhibit a well defined threshold shifted with temperature from about 1.5eV at 76 K to about 1.25 eV at 500 K. Pre-illumination in the “UV-band” produced an enhanced PC band with a temperature independent threshold at 1.08 0.03 eV. This photoenhanced band was found to be closely related to a thermally-simulated current peak (TSC) at 500 K with an activation energy of 0.50 eV excited by the pre-illumination in the UV-band. The prhotenhanced band was bleached out thermally with the exhaustion of the TSC peak below 600 K. Some of the characteristics of the photoenhanced band including the linear dependence of the square root of the PC on photon energy may suggest that internal photoemission of holes plays a role in the formation of this band.     

Relaxation processes upon photoexcitation of semiconductor CdF<Subscript>2</Subscript> by laser pulses

The microwave-cavity-based technique is used to study the processes of photoionization of electrons from donor levels to the conduction band in semiconductor CdF₂ crystals doped with Y, In, or Ga. The samples were excited by periodic pulses of Nd-laser (λ = 1.06 μm, pulse width ～10 ns) in the temperature range 6–77 K. The transient processes were detected in the absorption and dispersion modes related to variation of the imaginary and real parts of the complex permittivity ?₁ ? i?₂ induced by the light pulses. The observed signals consisted of short peak at t ～ 0, approximately 40–70 ns in length, and a long tail with a duration of ～100 ms. The short peak is likely to be related to the stay of the photoexcited carriers in the conduction band, while the long tail is associated with the processes of excitation relaxation after the electrons coming back to the donor levels of the impurity band. The weak temperature dependence of the width of the peak at t ～ 0 is explained by the tunneling mechanism of relaxation of electrons through the energy (or, probably, spatial) barrier separating the bound and free states of the carriers in the semiconductor CdF₂.     

The local central limit theorem for a Gibbs random field

We extend the validity of the implication of a local limit theorem from an integral one. Our extension eliminates the finite range assumption present in the previous works by using the cluster expansion to analyze the contribution from the tail of the potential.     

Anomalous second harmonic generation in iron-doped barium titanate

The temperature evolution of the angular dependence of the second harmonic intensity in iron-doped barium titanate is measured in the region of the transition from the cubic to the tetragonal phase. An unusual asymmetry of the angular distribution of this intensity is found in the temperature range corresponding to the peak in the temperature dependence of the integral intensity. The possible physical mechanisms of these anomalies are discussed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 4, 247–249 (25 August 1996)     

Diffusion effects on thermal desorption spectra of hydrogen from (111) surfaces of diamond-type crystals

We study the thermal desorption of atoms located in subsurface interstitial sites at the (111) surface of crystals with a diamond-type structure. From these sites they may either desorb or diffuse deeper into the crystal. A set of master equations is set up to describe the resulting random walk problem, and its solution yields both the desorption rate and total desorbed amount, as a function of time for constant temperature thermal desorption, or of temperature for flash desorption with a constant heating rate. Unequal values of the desorption and diffusion probabilities are allowed and the effect of initial occupation of deeper interstitial sites as well, is considered. In the latter case the desorption rate curve shows a double peak when the probabilities favour desorption, and in all cases a distinct long time or high temperature tail of the peak is found to result from diffusion. Based on this study, a model of H adsorption on Si(111) is presented and shown to explain several features of the experimental results of Schulze and Henzler.     

On the nature of exponential decrease of boson peak intensity tail, at increasing frequency higher than the peak position

In the present Letter, an exponential decrease of a boson peak intensity tail, at increasing frequency higher than the peak position, is predicted in the soft-mode model of low-energy glass dynamics for a series of glasses which exhibit a high-frequency sound above the peak. A similar theoretical interpretation is suggested for recent experimental data which show for some glasses a resembling behavior of the peak intensity tail.     

Theory of Raman scattering in Europium-chalcogenides

The intensity of the spin assisted Raman scattering in the Eu-chalcogenides is calculated using the excited states which were used in the analysis of the optical absorption. Various mechanisms are examined for the Raman scattering. In these mechanisms, the cross effect of the 4f spin-orbit interaction and the exciton-phonon interaction is found to be the most important for the scattering intensity. The characteristics of the Raman scattering from this mechanism are as follows: When the frequency of the incident light is in the tail region of the absorption peak, the polarization of the scattered light is perpendicular to that of the incident light; when the light in the middle region of the absorption peak is applied, the polarization of the incident light is depolarized in the scattered light; the scattering intensity decreases when the spin fluctuation is suppressed by an application of magnetic field or by lowering temperature through the Curie temperature. These characteristics in the Raman scattering have been observed in the experiments.     

Probing quantum-mechanical level repulsion in disordered systems by means of time-resolved selectively excited resonance fluorescence

We argue that the time-resolved spectrum of selectively-excited resonance fluorescence at low temperature provides a tool for probing the quantum-mechanical level repulsion in the Lifshits tail of the electronic density of states in a wide variety of disordered materials. The technique, based on detecting the fast growth of a fluorescence peak that is redshifted relative to the excitation frequency, is demonstrated explicitly by simulations on linear Frenkel exciton chains.     

Finite temperature theory of metastable anharmonic potentials

The decay rate for a particle in a metastable cubic potential is investigated in the quantum regime by the Euclidean path integral method in semiclassical approximation. The imaginary time formalism allows one to monitor the system as a function of temperature. The family of classical paths, saddle points for the action, is derived in terms of Jacobian elliptic functions whose periodicity sets the energy-temperature correspondence. The period of the classical oscillations varies monotonically with the energy up to the sphaleron, pointing to a smooth crossover from the quantum to the activated regime. The softening of the quantum fluctuation spectrum is evaluated analytically by the theory of the functional determinants and computed at low T up to the crossover. In particular, the negative eigenvalue, causing an imaginary contribution to the partition function, is studied in detail by solving the Lamè equation which governs the fluctuation spectrum. For a heavvy particle mass, the decay rate shows a remarkable temperature dependence mainly ascribable to a low lying soft mode and, approaching the crossover, it increases by a factor five over the predictions of the zero temperature theory. Just beyond the peak value, the classical Arrhenius behavior takes over. A similar trend is found studying the quartic metastable potential but the lifetime of the latter is longer by a factor ten than in a cubic potential with same parameters. Some formal analogies with noise-induced transitions in classically activated metastable systems are discussed.     

Order-disorder transition in nanoscopic semiconductor quantum rings

Using the path integral Monte Carlo technique we show that semiconductor quantum rings with up to six electrons exhibit a temperature, ring diameter, and particle number dependent transition between spin ordered and disordered Wigner crystals. Because of the small number of particles the transition extends over a broad temperature range and is clearly identifiable from the electron pair correlation functions.     

Experimental determination of the spin-wave spectrum of the two-dimensional ferromagnet K2CuF4

K₂CuF₄ is a quasi-bidimensional ferromagnet with an easy magnetization plane. The Curie temperature is 6.25 K. We have measured the spin-wave spectrum from 2 to 14 K, and found an exchange integral of 11.4 K between the first neighbours in the basal plane. No measurable dispersion was found along the axis perpendicular to that plane. We have observed a shift in the energy of the magnons, and a broadening of the magnon peak both of which behave differently below and above the Curie temperature.     

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Silicon-rich hydrogenated amorphous silicon nitride (a-SiN_x:H) films were grown by plasma enhanced chemical vapor deposition (PECVD) with different r=NH₃/SiH₄ gas flow ratios. The optical absorption characteristics were analyzed by Fourier transform infrared (FTIR) and UV-visible transmittance spectroscopies. The recombination properties were investigated via photoluminescence (PL) measurements. As r was increased from 2 to 9, the PL emission color could be adjusted from red to blue with the emission intensity high enough to be perceived by naked eye at room temperature. The behaviors of the PL peak energy and the PL band broadness with respect to the optical constants were discussed in the frame of electron-phonon coupling and band tail recombination models. A semiquantitative analysis supported the band tail recombination model, where the recombination was found to be favored when the carriers thermalize to an energy level at which the band tail density of states (DOS) reduces to some fraction of the relevant band edge DOS. For the PL efficiency comparison of the samples with different nitrogen contents, the PL intensity was corrected for the absorbed intensity fraction of the incident PL excitation source. The resulted correlation between the PL efficiency and the subgap absorption tail width further supported the band tail recombination model.