Heteroepitaxial praseodymium sesquioxide films on Si(1 1 1): A new model catalyst system for praseodymium oxide based catalysts

The structure, growth and stoichiometry of heteroepitaxial Pr₂O₃ films on Si(1 1 1) were characterized by a combined RHEED, XRD, XPS and UPS study in view of future applications as a surface science model catalyst system. RHEED and XRD confirm the growth of a (0 0 0 1) oriented hexagonal Pr₂O₃ phase on Si(1 1 1), matching the surface symmetry by aligning the oxide in-plane direction along the Si azimuth. After an initial nucleation stage RHEED growth oscillation studies point to a Frank-van der Merwe growth mode up to a thickness of approximately 12 nm. XPS and UPS prove that the initial growth of the Pr₂O₃ layer on Si up to ∼1 nm thickness is characterized by an interface reaction with Si. Nevertheless stoichiometric Pr₂O₃ films of high crystalline quality form on top of these Pr-silicate containing interlayers.     

Growth and structure of vanadium oxide on anatase (1 0 1) terraces

The interaction of vanadium oxide with epitaxial anatase films exposing (1 0 1) terraces was characterized. The TiO₂ films were grown on vicinal LaAlO₃ (1 1 0) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE); reflection high energy and low energy electron diffraction (RHEED and LEED) indicated that the films exposed (1 0 1) terraces of the anatase TiO₂ polymorph. When a vanadium oxide monolayer was deposited onto the anatase surface by OPA-MBE at 725 K, only (1 × 1) RHEED and LEED patterns were observed. The V X-ray photoelectron spectroscopy (XPS) peak intensities indicated that the monolayer wetted the anatase surface and so the diffraction patterns were attributed to an epitaxial vanadia layer. Analysis of the vanadium oxide monolayer by X-ray and ultraviolet photoelectron spectroscopies revealed that the V was predominantly 5+. When the vanadia coverage was increased at 725 K, Auger electron spectra showed only very slow attenuation of the anatase Ti peaks while spots began to develop in RHEED patterns recorded along the LaAlO₃ direction; both indicative of 3-D cluster formation. In the orthogonal direction, the RHEED patterns showed unusual diagonal streaks. Meanwhile, the (1 × 1) LEED pattern persisted even after 30 nm of vanadia was deposited. This was attributed to gaps between the 3-D clusters exposing the epitaxial monolayer. Core level XPS spectra of the 3-D clusters revealed a broad V 2p_3/2 peak that was centered at the position expected for V⁴⁺ but could be deconvoluted into three peaks corresponding to V³⁺, V⁴⁺, and V⁵⁺. It is shown that crystallographic shear that accommodates such variations in the oxygen content of V oxides can lead to the diagonal streaks in RHEED patterns recorded along the LaAlO₃ [0 0 1] direction even as the pattern in the orthogonal direction shows sharp transmission spots. The results show that vanadia growth on anatase (1 0 1) proceeds through the Stranski-Krastanov mode with a strong vanadia-titania interaction stabilizing a dispersed vanadia monolayer. The results are compared with previous data for vanadia growth on anatase (0 0 1) where smooth, epitaxial VO₂ films grow ad infinitum.     

Antibacterial effect of silver modified TiO<Subscript>2</Subscript>/PECVD films

This paper deals with photocatalytic activity of silver treated TiO₂ films. The TiO₂ films were deposited on glass substrates by plasma enhanced chemical vapor deposition (PECVD) in a vacuum reactor with radio frequency (RF) low temperature plasma discharge in the mixture of oxygen and titanium isopropoxide vapors (TTIP). The depositions were performed under different deposition conditions. Subsequently, the surface of TiO₂ films was modified by deposition of silver nanoparticles. Photocatalytic activity of both silver modified and unmodified TiO₂ films was determined by decomposition of the model organic matter (acid orange 7). Selected TiO₂ samples were used for tests of antibacterial activity. These tests were performed on Gram-negative bacteria Escherichia coli. The results clearly proved that presence of silver clusters resulted in enhancement of the photocatalytic activity, which was up to four times higher than that for pure TiO₂ films.     

Preparation and transport properties of Ba1−x Sr x CuO2+δ infinite layer films grown by molecular-beam epitaxy

Thin films of Ba_1–x Sr _x CuO₂₊ in the infinite layer structure were prepared by molecular beam epitaxy on SrTiO₃ substrates. Excellent in-plane order during growth was shown by RHEED. The lattice constant inc-direction was determined by x-ray diffraction. It changed from 0.404 nm to 0.345 nm whenx increased from 0 to 1. The film surfaces were smooth with some outgrowths as revealed by atomic force microscopy. Excellent crystal structure and epitaxy of the films was demonstrated by high resolution transmission electron microscopy. The room temperature dc resistivities of the films varied from 10^–3 cm to 10² cm, depending onx and on the oxidation conditions during growth. The resistivities of most films showed negative temperature coefficients and obeyed the conduction model of variable range hopping at low temperatures. In the composition rangex=0.5–0.8, however, an anomalous resistance dependence on temperature was observed in many samples. The resistivities started to deviate from the monotonic behaviour just below 200 K and in some cases dropped remarkably at temperatures below 140 K.     

Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

C-cut and α-cut sapphire substrates are used to grow epitaxial titanium oxide films by pulsed-laser deposition at 700 °C under a controlled oxygen pressure in the 10⁻¹-10⁻⁵ mbar range. The rutile phase is evidenced in films whatever the substrate and the oxygen pressure while the anatase phase is only observed on c-cut sapphire substrate and for oxygen pressure down to 10⁻³ mbar. No other titanium oxide phases (i.e. TiO, Ti₂O₃ or Magneli phases) are identified despite the oxygen-deficiency observed in films grown at low oxygen pressure. According to asymmetric X-ray diffraction measurements performed on films, the main axis growth and the in-plane epitaxial relationships between titanium oxide films and sapphire substrates are found to be depending on the orientation of the sapphire basal plane and on the oxygen pressure. The anatase crystallites are highly oriented with the following epitaxial relationship . The rutile phase is (2 0 0) oriented on c-cut sapphire substrate and displays two distinct in-plane relationships: . The use of α-cut sapphire substrate leads to the growth of rutile crystallites (2 0 0) or (1 0 1) oriented. In these cases, the in-plane orientations are , respectively. For the two substrates used, schematic views of atomic arrangement of the different interfaces are proposed.     

SrRuO based heterostructures grown by pulsed laser deposition

In this report we demonstrate that high quality epitaxial heterostructures, based on metallic SrRuO₃ and insulating SrTiO₃ individual blocks a few unit cells thick, can be grown in a purely 2D, layer-by-layer mode, using pulsed laser deposition with in situ reflection high energy electron diffraction (RHEED) diagnostics. The thickness of each constituent block can be controlled at the level of a single unit cell. A detailed investigation carried out at the synchrotron facility, ESRF, by various X-ray techniques has demonstrated that each intensity oscillation of the RHEED specular spot corresponds strictly to the growth of a single perovskite unit cell, either SrRuO₃ or SrTiO₃. Furthermore, we show that, in these structures, the interfaces between the different constituent blocks are very sharp with a roughness of only one unit cell. Received 3 July 2002 / Received in final form 12 September 2002 Published online 31 October 2002 RID="a" ID="a"e-mail: tebano@uniroma2.it     

Improved optical response and photocatalysis for N-doped titanium oxide (TiO2) films prepared by oxidation of TiN

In order to improve the photocatalytic activity, N-doped titanium oxide (TiO₂) films were obtained by thermal oxidation of TiN films, which were prepared on Ti substrates by ion beam assisted deposition (IBAD). The dominating rutile TiO₂ phase was found in films after thermal oxidation. According to the results of X-ray photoelectron spectroscopy (XPS), the residual N atoms occupied O-atom sites in TiO₂ lattice to form TiON bonds. UV-vis spectra revealed the N-doped TiO₂ film had a red shift of absorption edge. The maximum red shift was assigned to the sample annealed at 750 °C, with an onset wavelength at 600 nm. The onset wavelength corresponded to the photon energy of 2.05 eV, which was nearly 1.0 eV below the band gap of pure rutile TiO₂. The effect of nitrogen was responsible for the enhancement of photoactivity of N-doped TiO₂ films in the range of visible light.     

Mechanical instabilities of bubble clusters between parallel walls

We have carried out a systematic study of buckling-like mechanical instabilities in simple two- (2D) and three-dimensional (3D) symmetric foam clusters sandwiched between parallel planar walls. These instabilities occur when the wall separation w is reduced below a critical value, w^*, for which the foam surface energy E reaches its minimum, E^*. The clusters under investigation consist of either a single bubble, or of twin bubbles of fixed equal sizes (areas A in 2D or volumes V in 3D), which are either free to slide or pinned at the confining walls. We have numerically obtained w^* for both free and pinned 2D and 3D clusters. Furthermore, we have calculated the buckled configurations of 2D twin bubbles, either free or pinned, and of 3D free twin bubbles, whose energy is independent of w and equal to the minimum energy E^* of the unbuckled state. Finally, we have also predicted the critical w_t^* at which the terminal configurations under extension of 2D and 3D single and twin bubbles are realised. Experimental illustrations of these transitions under compression and extension are presented. Our results, together with others from the literature, suggest that a bubble cluster bounded by two parallel walls is stable only if the normal force it exerts on the walls is attractive, i.e., if dE/dw > 0; clusters that cause repulsion between the walls are unstable. We correlate this with the distribution of film orientations: films in a stable cluster cannot be too parallel to the confining walls; rather, their average tilt must be larger than for a random distribution of film orientations.     

Grain Boundaries in Barium Strontium Titanate Thin Films: Structure, Chemistry and Influence on Electronic Properties

In this paper, we investigate the role of grain boundaries in polycrystalline (Ba _x Sr_1–x )Ti_1+y O_3+z films, grown by metal organic vapor deposition, in the accommodation of nonstoichiometry, as well as their role in the strong composition dependence of the electric and dielectric behavior observed in these films. High-spatial resolution electron energy-loss spectroscopy is used for the analysis of composition and structural changes at grain boundaries, as a function of film composition. The existence of amorphous, titanium rich, TiO₂-like phases at the grain boundaries of films with large amounts of excess Ti (y 0.08) may explain the non-monotonic resistance degradation behavior of the films as a function of Ti content. However, we show that a grain boundary phase model fails to explain the strong composition dependence of the dielectric behavior. Electron energy-loss spectra indicate a distortion of the Ti–O octahedra in the grain interiors in samples with increasing Ti excess. The decrease of the dielectric constant with increasing amounts of excess Ti is therefore more likely due to Ti accommodation in the grain interiors.     

From anisotropic dots to smooth RFe 2 (110) single crystal layers (R = rare earth)

Single crystal RFe₂(110) films were grown by molecular beam epitaxy to a total thickness of 1000 ? at different substrate temperatures ranging from 450 ^° C to 660 ^° C. The first stages of growth and the surface morphology of the deposited layers have been studied using Reflection High Energy Electron Diffraction (RHEED) and Atomic Force Microscopy (AFM). The growth is first strained but further deposit induces the formation of three-dimensional fully relaxed islands. Subsequently, the morphology of the RFe₂(110) nanosystems evolves from anisotropic dots to a smooth surface, as a function of the preparation parameters, i.e. nominal thickness and substrate temperature. It also depends on the rare earth involved in the compound. Received 29 June 2000     

Reduction of spin glasses applied to the Migdal-Kadanoff hierarchical lattice

A reduction procedure to obtain ground states of spin glasses on sparse graphs is developed and tested on the hierarchical lattice associated with the Migdal-Kadanoff approximation for low-dimensional lattices. While more generally applicable, these rules here lead to a complete reduction of the lattice. The stiffness exponent governing the scaling of the defect energy E with system size L, (E) ~L ^y, is obtained as y ₃ = 0.25546(3) by reducing the equivalent of lattices up to L = 2¹⁰⁰ in d = 3, and as y ₄ = 0.76382(4) for up to L = 2³⁵ in d = 4. The reduction rules allow the exact determination of the ground state energy, entropy, and also provide an approximation to the overlap distribution. With these methods, some well-know and some new features of diluted hierarchical lattices are calculated.     

Room‐temperature epitaxial growth of high‐quality m ‐plane InGaN films on ZnO substrates

The authors have grown high‐quality m ‐plane In_0.36Ga_0.64N (1 00) films on ZnO (1 00) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m ‐plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two‐dimensional mode. X‐ray diffraction measurements have revealed that the m ‐plane InGaN films grow without phase separation reactions at RT. The full‐width at half‐maximum values of the 1 00 X‐ray rocking curves of films with X‐ray incident azimuths perpendicular to the c ‐ and a‐axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space‐mapping has revealed that a 50 nm thick m ‐plane In_0.36Ga_0.64N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Static anisotropic and isotropic electric dipole polarizabilities of Na n F n-1 clusters

Recently, electric susceptibilities of Na_nF_n-1 clusters have been measured by deflecting a molecular beam in an inhomogeneous electric field. The analysis of the deflection of a cluster by the electric field needs the calculation of the electric properties. We present the calculation of the static anisotropic and average dipolar polarizabilities within a model in which the Na_nF_n-1 clusters ( 2 n 23) are treated as one electron embedded in the field of n ions Na⁺ and of n - 1 ions F^-. The accuracy of the results is evaluated and discussed on small clusters (n 5) in comparison with ab initio calculations. The relationship between the polarizabilities, the electronic localization and the geometric structure is discussed. Received 10 September 2002 Published online 3 July 2003     

Chemical composition and phase identification of sodium titanate nanostructures grown from titania by hydrothermal processing

Fine titanium dioxide particles were hydrothermally treated in a sodium hydroxide aqueous solution. The treatment extended from 1 to 6 days leading to belt-like and wire-like structures of a metastable phase of sodium titanate, with typical widths and diameters between 8 and 40 nm, and lengths from 100 nm to several micrometers. These conclusions are supported by X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy. The latter method revealed two set of space fringes with characteristic distances of 0.29 and 0.34 nm. These distances could correspond to the lattice spacing of and planes in Na₂Ti₆O₁₃ compounds. The nanomaterial was found to be stable up to temperatures as high as 200 or depending on the reaction time and the concentration.     

Thermodynamic properties of the spin-1/2 antiferromagnetic ladder under magnetic field

Specific heat (C_V) measurements in the spin-1/2 Cu₂(C₂H₁₂N₂)₂Cl₄ system under a magnetic field up to H =8.25 T are reported and compared to the results of numerical calculations based on the 2-leg antiferromagnetic Heisenberg ladder. While the temperature dependences of both the susceptibility and the low-field specific heat are accurately reproduced by this model, deviations are observed above the critical field H_C1 at which the spin gap closes. In this Quantum High Field phase, the contribution of the low-energy quantum fluctuations are stronger than in the Heisenberg ladder model. We argue that this enhancement can be attributed to dynamical lattice fluctuations. Finally, we show that such a Heisenberg ladder, for H > H C1, is unstable, when coupled to the 3D lattice, against a lattice distortion. These results provide an alternative explanation for the observed low temperature ( K-0.8 K) phase (previously interpreted as a 3D magnetic ordering) as a new type of incommensurate gapped state. Received: 23 July 1998 / Accepted: 24 August 1998     

Effect of oxygen segregation on the surface structure of single-crystalline niobium films on sapphire

Single-crystalline Nb films are grown on (1120) oriented sapphire substrates by electron-beam evaporation in ultra-high vacuum. The films are studied in-situ by RHEED and Auger analysis. At a substrate temperature T _S=750° C the RHEED pattern shows a smooth growth of bcc-Nb in the [110] direction. In addition to the fundamental streaks, we observe superlattice streaks of fractional order in several azimuthal directions. The reciprocal lattice of the surface is determined. The basic vectors of the superlattice in real space are given by b ₁=2a ₁, b ₂=–a ₁+3a ₂ where a ₁ and a ₂ are the basic vectors of the Nb (110) surface. Auger analysis shows that the surface of these films is contaminated with oxygen. Therefore, the superstructure is attributed to a modified surface structure due to segregated oxygen, possibly having diffused from the sapphire to the film surface. The superstructure dissappears during further evaporation of Nb at T _S<450° C with a concomitant decrease of the oxygen signal. Nb films on sapphire with a clean, oxygen-free surface can only be prepared at lower temperatures in an island-growth mode.     

On the nature of ion bombardment-induced phase transformations in films of transition metals

Abstract

Electron diffraction studies have been made of polycrystalline Ni films irradiated with well separated beams of ions of different nature, namely ions of inert (He⁺, Ne⁺, Ar⁺, Kr⁺, Xe⁺) and reactive (N⁺ and O⁺) gases. The Ni films were prepared under vacuum conditions (P? 3·10^?6Pa during evaporation) preventing an appreciable contamination of the films with impurities. The samples were irradiated at T? 300 K with ion beams of energies from 10 to 100 keV in the dose range between 5·10¹⁶ cm^?2 and the value leading to sample destruction.

Irradiation with noble gas ions revealed no phase transitions in the Ni films. A similar result was obtained in irradiation of Fe and Cr films with He⁺ ions. The bombardment of Ni films with reactive gas ions does cause changes in the lattice structure of the samples under study, depending on the nature of the bombarding ions. The N⁺ ion bombardment gives rise to the hcp phase with the lattice parameters typical of the Ni₃N compound, and the O⁺ ion bombardment results in the fcc phase with the NiO-type parameter.

The conclusion is drawn on the chemical origin of the phase transformations in the Ni films under ion bombardment. The necessity of revising the concept about the polymorphous nature of phase transformations induced in the films of transition metals by ion bombardment is substantiated.     

Large area excimer laser induced deposition of titanium from titanium tetrachloride

Large area excimer laser induced deposition of titanium on fused silica from TiCl₄ is studied with an emphasis on process modeling. We show that several TiCl₄ monolayers can be adsorbed if the surface is adequately prepared and that the Ti thin film growth occurs through the photodecomposition of this adsorbed TiCl₄ layer. We propose two growth regimes. During an initiation phase, up to 3 nm in thickness, the adsorbed layer is photochemically decomposed giving a growth rate of 0.015 nm/pulse. In a second phase, the deposition rate increases to between 2 and 7 nm/pulse due to the laser heating of the preceding photochemically deposited titanium film. Between consecutive pulses, TiCl₄ molecules primarily from the adsorbed layer diffuse to the reaction zone leading to a new adsorbed layer ready to be transformed to solid titanium.