陶瓷材料中圆形夹杂的本征应变导致的微开裂

由夹杂转变引起的微开裂与陶瓷材料的断裂和增韧机制密切相关。本文采用位错连续分布的方法,导出圆形夹杂发生本征应变时在母体材料中形成的微裂纹的位错密度函数、张开位移及应力强度因子的解析表达式,并据本文得到的结果进行了分析和讨论。 关键词：     

铁基非晶丝样低频涡流损耗分析

以非晶丝的芯-壳(core-shell)结构模型为基础,对铁基非晶丝考虑其芯内存在一沿轴向的应力磁各向异性K_c, 而壳内是沿径向的应力磁各向异性K_s(K_c和K_s均为应力能常量λ_sσ₀的函数),导出了样品的交流环向磁导率μ_φ(r).由Maxwell方程和Ohm定律计算出此模型下的低频经典涡流损耗反常因子为η＝2．2.理论值与实验结果的比较表明,铁基非晶丝的 关键词： 非晶丝 芯壳结构 涡流损耗反常因子     

激光束在漫射表面上的散射(Ⅱ)

首先在前文的基础上,对于用激光根据“光核、光带比”(D₂/D₁)来测定磨削工件表面光洁度的原理加以系统总结,然后按照经验关系R_x=5R_a(对于▽7以上光洁度),确定了表面随机高度的概率密度函数中的衰减系数。对于有限负指数型函数P₁(h)={e^{(-b(|h|/h_m))} 当|h|≤h_m; 0 当|h|>h_m, 定出b=1.23,对于正则型函数P₂(h)=e^{(-a2(h/h_m)2)} 定出a²=2.分别讨论了以上两种函数中h_m的物理意义(皆对应于1/2R_z)将前文中公式加以精确改进后,对P₁(h)和P₂(h)分别计算了D₂/D₁与R_x的关系曲线,即绝对定标曲线。最后还计算了衍射图样半强度宽与R_x的关系曲线。 关键词：     

十一甲川和五甲川染料的吸收和弛豫时间

本文报道了用于掺钕激光材料锁模的中国快速可饱和吸收染料D₁(十一甲川)和D₂(五甲川)的吸收和弛豫时间的测量结果。 关键词：     

Ar-H2(D2, T2)碰撞体系的振转相互作用势及散射截面的理论计算

用量子力学从头算的耦合族CCSD(T)方法, 使用相关一致基组aug-cc-pV5Z并加3s3p2d1f1g高斯键函数计算了Ar原子与H₂分子的振转相互作用和电荷分布, 采用Boys和Bernardi提出的均衡法消除了基组重叠误差(BSSE). 然后用Tang-Toennies势能函数拟合得到Ar-H₂体系相互作用势的解析表达式. 在该相互作用势下, 用密耦方法计算了Ar原子入射能量为83 meV时, Ar-H₂(D₂, T₂)碰撞体系的散射截面. 计算Ar-D₂体系的微分截面与实验值比较符合很好. 计算结果及分析表明, 在长程吸引势的散射中, 色散能起主要作用; 在短程排斥势的散射中, 交换能起重要作用. 当碰撞参数在0.27 nm至0.47 nm的范围时, Ar-H₂(D₂, T₂)碰撞体系的径向偶极发生两次转向.     

恒定温度应力加速实验失效机理一致性快速判别方法

针对加速实验中因失效机理发生改变而导致的无效实验问题, 对失效机理一致性和分别在不同应力下器件的初期退化参数分布的关系进行了研究. 研究证明了判断加速实验失效机理一致的条件: 1) 不同应力下失效分布的形状参数服从一致, 即m_i=m, i=1,2,3,···, 2) 尺度参数 η_i服从η_i= AF_i·η. 从而提供一种在实验初期即可根据参数退化分布快速判别不同应力下失效机理是否一致的方法, 避免了因失效机理发生改变而造成的无效加速实验. 最后对加速实验初期理论退化数据和多芯片组件厚膜电阻初期退化数据进行了威布尔分布参数估计, 并对其在不同应力下的失效机理一致性进行了判别. 关键词： 失效机理一致性 恒定温度应力加速实验 威布尔分布     

不同能量的氦原子与同位素分子H2(D2，T2)碰撞分波截面的理论计算

用Tang-Toennies势模型和密耦近似方法计算了不同能量下惰性气体原子He与H₂及其同位素D₂,T₂替代碰撞体系的振转激发碰撞截面. 通过分析He-H₂(D₂,T₂)各碰撞体系分波截面的差异,总结出在H₂分子的对称同位素替代情形下He-H₂(D₂,T₂)碰撞体系分波截面随量子数和体系 关键词： 散射截面 密耦方法 同位素     

关于X射线衍射方程的Green函数解法

用傅氏积分解出在完整晶体下波动方程的Green函数,通过Green公式求出透射X射线波场D_h,D₀的表达式,并在入射波为平面波和球面波时,将得到的D_h,D₀值与其它作者的结果作了比较,也讨论了样品厚度与D_h,D₀的关系。 关键词：     

C42+的几何构型和Jahn Teller效应

用从头计算法QCISD/6-311G得到了C₄²⁺分子的10种不同的几何构型,其中包括C_s,C_∞v,C_2v,D_2h,D_∞h,D_4h,D_2d,C_3v等不同的构型.计算表明C₄²⁺的T_d构型不能稳定存在,详细讨论了T_{d 关键词： 几何构型 4}²⁺')" href="#">C₄²⁺ Jahn Teller效应     

Ne原子与H2分子碰撞的同位素替代效应研究

使用密耦近似（Close-Coupling）方法、采用Tang-Toennies势模型计算了惰性气体原子Ne与H₂分子及同位素D₂分子在碰撞能量为83.8 meV时的微分散射截面及分波截面, 并与实验值和文献值进行比较.计算得到的微分散射截面值与实验值符合得较好,分波截面值与文献值也相符合.使用同样的方法和模型,文中对Ne-H₂(D₂,T₂)三个体系的微分截面和分波截面进行了系统计算和比较分析,得出对称同位素替代碰撞体系的散射截面规律. 关键词： 2(D₂')" href="#">Ne-H₂(D₂ 2)碰撞')" href="#">T₂)碰撞 Tang-Toennies势模型 密耦方法 同位素替代     

Effect of source strength on dislocation pileups in the presence of stress gradients

The behaviour of a dislocation pileup with a finite-strength source is investigated in the presence of various stress gradients within a continuum model where a free-dislocation region exists around the source. Expressions for dislocation density and stress field within the pileup are derived for the situation where there are first and second spatial gradients in applied stress. For a pileup configuration under an applied stress, yielding occurs when the force acting on the leading dislocations at the pileup tips reaches the obstacle strength, and at the same time, it is required that the source be at the threshold stress for dislocation production. A numerical methodology is presented to solve the underlying equations that represent the yielding conditions. The yield stress calculated for a pileup configuration is found to depend on stress gradients, obstacle spacing and source/obstacle strengths. It increases with increasing the first stress gradient, yet dependent on the second stress gradient. Furthermore, while the dependency of yield stress on the obstacle spacing intensifies with increasing the first stress gradient, it diminishes with an increase of second stress gradient. Therefore, the second stress gradient, as a newly introduced parameter, can provide a new physical insight into the size-dependent plasticity phenomena at small length scales.     

Towards a further understanding of dislocation pileups in the presence of stress gradients

This study is an essential complement and extension to the stress-gradient concept recently proposed by Hirth. An analytic method is presented for studying the behaviour of double-ended dislocation pileup in the presence of various stress gradients by solving a singular integral equation based on the continuous approximation of dislocations. Four special cases of double-ended pileup in the presence of stress gradients are discussed in detail. The corresponding dislocation distribution, the length of pileup, the total number of dislocations within the pileup and the force on the leading dislocations at the pileup ends are derived, respectively. It is shown that both the number of dislocations and the force on the leading dislocation in a pileup are sensitive to the relative magnitude of stress near the dislocation source and both are less than that in constant stress case. Of particular importance, it is indicated that the small-scaled materials subjected to a stress involving a gradient would be stronger than that under a constant stress. Applied to wire torsion and foil bending, the stress gradient model predicts an increase in the initial yielding, which is in reasonable agreement with the recent experimental data. The proposed stress gradient concept may provide a new physical insight into the size-dependent plasticity phenomena at small length scale.     

Effect of dislocation distribution in twin boundaries on the nucleation of microcracks at the twin tip

The effect of dislocation distribution in the boundaries of an arrested twin on the nucleation of microcracks at its tip is investigated. The twin is simulated by a double step pileup (cluster) of twinning dislocations located in adjacent slip planes. The equilibrium equations for dislocations are solved numerically. Clusters with different total numbers of dislocations and with different ratios of the numbers of dislocations at the upper and lower twin boundaries are considered. The formation of microcracks as a result of coalescence of head dislocations according to the force and thermally activated mechanisms is analyzed. The equilibrium configurations of a single twin boundary and of the twin are calculated. It is found that the condition for microcrack formation at the twin tip considerably depends on the ratio of the numbers of dislocations in twin boundaries. In the limit, this condition coincides with the condition of crack formation at the tip of a single twin boundary with the same total number of dislocations. It is shown that thermally activated formation of a microrack corresponds to lower values of the critical stress.     

Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

It is shown for (111) and (001) interfaces that at an identical degree of strain relaxation in semi-conductor epitaxial films, the ratio of distances D between neighboring dislocations is D ₍₁₁₁₎/D ₍₀₀₁₎ = 1.5. This allows us to establish that dislocation interface (7 7 10) contains partial 90° Shockley dislocations lying in three directions of 〈110〉.     

Testing the Distance-Duality Relation from Hubble,Galaxy Clusters and Type Ia Supernovae Data with Model Independent Methods

In this paper, we perform cosmological-model-independent tests for the distance-duality (DD) relation η(z)=D _L(1+z)^?2/D _A by combining the angular diameter distance D _A(or comoving distances D _c ) with the luminosity distance D _L. The D _A are provided by two galaxy clusters samples compiled by De Filippis et al. (the elliptical β model), Bonamente et al. (the spherical β model), the D _c are obtained from Hubble parameter data and D _L are given from the Union2.1 supernovae (SNe) Ia compilation. We employ two methods, i.e., method A: binning the SNe Ia data within the range Δz=|z?z _SNe|<0.005, and method B: reconstructing the D _L(z) by smoothing the noise of Union2.1 data set over redshift with the Gaussian smoothing function, to obtain D _L associated with the redshits of the observed D _A or D _c. Four parameterizations for η(z), i.e., η(z)=1+η ₀ z, η(z)=1+η ₀ z/(1+z), η(z)=1+η ₀ z/(1+z)² and η(z)=1?η ₀ ln(1+z), are adopted for the DD relation. We find that DD relation is consistent with the present observational data, and the results we obtained are not sensitive to the method and parameterization.     

Collisional Broadening of CO<Subscript>2</Subscript> Transition Lines 10<Superscript>0</Superscript>0–00<Superscript>0</Superscript>1 by Inert Gas Atoms at 300–700 K

The spectrum of excitation of Rydberg states of thallium atoms has been investigated using a collimated atomic beam in a two-step isotope selective laser scheme 6²P_1/2 → 6²D_3/2 → Tl** in the presence of an electric field with a strength of up to 1.5 kV/cm near the level 16F_5/2. The optical transitions 6D_3/2 → 18D_3/2 and 6D_3/2 → 16G_7/2, which were induced by an external electric field and dipole-forbidden, have been studied experimentally. The values for the scalar polarizabilities (in units сm^–1/(kV/сm)²) α₀(16F_5/2) = 3.71 ± 0.3, α₀(18D_3/2) = 11.70 ± 0.25, and α₀(16G_7/2) = 44.1 ± 0.9, which are compared with the calculated one, have been obtained. The new values of energy parameters for the states 18D_3/2 and 16G_7/2 have been determined.     

Assortativity of complementary graphs

Newman's measure for (dis)assortativity, the linear degree correlationρ _D , is widely studied although analytic insight into the assortativity of an arbitrary network remains far from well understood. In this paper, we derive the general relation (2), (3) and Theorem 1 between the assortativity ρ _D (G) of a graph G and the assortativityρ _D (G ^c) of its complement G ^c. Both ρ _D (G) and ρ _D (G ^c) are linearly related by the degree distribution in G. When the graph G(N,p) possesses a binomial degree distribution as in the Erd?s-Rényi random graphs G _p (N), its complementary graph G _p ^c (N) = G _{1- p} (N) follows a binomial degree distribution as in the Erd?s-Rényi random graphs G _{1- p} (N). We prove that the maximum and minimum assortativity of a class of graphs with a binomial distribution are asymptotically antisymmetric: ρ _max(N,p) = -ρ _min(N,p) for N → ∞. The general relation (3) nicely leads to (a) the relation (10) and (16) between the assortativity range ρ _max(G)–ρ _min(G) of a graph with a given degree distribution and the range ρ _max(G ^c)–ρ _min(G ^c) of its complementary graph and (b) new bounds (6) and (15) of the assortativity. These results together with our numerical experiments in over 30 real-world complex networks illustrate that the assortativity range ρ _max–ρ _min is generally large in sparse networks, which underlines the importance of assortativity as a network characterizer.     

Absorption spectrum of the Mn2+ ions in crystals of lanthanum manganese double nitrate and praseodymium manganese double nitrate

The optical absorption spectrum of the Mn²⁺ ions in the two double nitrates La₂Mn₃(NO₃)₁₂ ? 24H₂O and Pr₂Mn₃(NO₃)₁₂ ? 24H₂O were measured up to 30000 cm^?1. Uniaxial stress was applied to the crystals to determine the multiplicity of the observed zero phonon lines belonging to the transitions from the groundstate⁶ A ₁ (⁶ S) to the excited states⁴ E(⁴ G) and⁴ T ₂(⁴ D). The Zeeman effect of the states⁴ A ₁(⁴ G) and⁴ E(⁴ G) was measured with magnetic fields up to 6.4T. The effect of covalency and trigonal field, especially to the states⁴ A ₁ (⁴ G) and⁴ E(⁴ G), is briefly discussed.     

Surface size effects under plastic deformation of microcrystals and nanocrystals

The size effects associated with the crystal surface as an effective sink for moving dislocations in a thin crystal and as a barrier for these dislocations in the presence of a high-strength film or a special hardened layer on the surface, which favor the accumulation of dislocations in the crystal, have been considered theoretically in terms of the kinetic equation for the density of dislocations concentrated in the crystal in the critical lengths of single-ended (unipolar) dislocation sources. The theoretical results have been illustrated by the experimental data available in the literature for microcrystals and nanocrystals of copper and aluminum. It has been found in accordance with these data that the dependence of the yield stress ??_2% of the crystal on the crystal transverse size D has the form ??_2% ?? D ^?0.75 when there is a free crystal surface for the escape ofthe dislocations and ??_2% ?? D ^?0.5 when there is a high-strength layer on the lateral surface of the crystal..