Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.     

基于DFB激光器的光学微波信号的产生

采用量子阱混杂的材料集成技术制备并联分布反馈激光器和Y形波导耦合器集成的新型光电器件.两个并联分布反馈激光器的激射模式在频率上稍有差别,这两束不同频率的激光在Y形波导耦合器拍频产生光学微波信号.分别独立调节注入到两个激光器的电流大小,可以得到从13 GHz到42 GHz连续可调的光学微波信号. 关键词： 光学微波信号生成 分布反馈激光器 Y形波导 拍频     

High speed and wide temperature range uncooled 1.3-μm ridge waveguide DFB lasers

A 1.3-μm wavelength vertical-mesa ridge waveguide mulitple-quantum-well （MQW） distributed feedback （DFB） laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from -40 to 85 ℃ are obtained. The mean time to failure （MTTF） is estimated to be over 2×10^6 h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.     

Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm-4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.     

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.     

分布反馈量子级联激光器光栅反馈特性北大核心CSCD

为探究Bragg光栅结构对TM模反馈特性的影响,利用有限时域差分法对具有TM模的分布反馈(DFB)量子级联激光器Bragg光栅结构进行仿真研究。重点分析了侧向耦合光栅的光学特性以及光栅侧壁倾角对光栅反射谱、损耗的影响及原因,并探究了光栅刻蚀深度及占空比与TM模的耦合系数、损耗的关系。结果表明有效折射率是影响Bragg波长的主要因素,而光限制因子是不同周期的侧向耦合光栅结构耦合系数产生巨大差别的原因,当光栅侧壁倾角90°时镜面损耗最小。光栅周期、占空比、刻蚀深度与耦合系数的关系表明:这些参数不仅影响光栅的相对介电常数,也会对光限制因子产生作用,从而影响耦合系数的大小;耦合系数与刻蚀深度具有正比关系,大周期光栅耦合系数随占空比的变化率较小。对光栅光反馈特性的理论研究有利于提升对DFB量子级联激光器的认识,促进激光器性能的提升和发展。     

Group theory and experiments on helical and linear distributed feedback gas lasers

This study puts forward the concept of helical distributed feedback (DFB) lasers. The basic features of this new type of laser are derived by group theoretical considerations on cylindrical, circular linear periodic, and helical waveguide and laser structures. It is demonstrated that not only linear periodic structures but also helical structures show Bragg and DFB effects. Microwave and far-infrared experiments on passive helical metal waveguides reveal Bragg resonances in transmission. These results initiated the first experimental realization of a helical DFB gas laser, i.e. an optically pumped 496m CH₃F laser with a helical metal waveguide of a pitch close to 250m. This helical DFB laser shows higher-mode selectivity than the corresponding linear DFB laser. Finally, we show that the concept of helical DFB also applies to dye lasers with internal DFB incorporated by a mixture of the dye with a cholesteric liquid crystal.On leave from the Polish Academy of Sciences, Gdansk, Poland     

Optimization of 780?nm DFB diode lasers for high-power narrow linewidth emission

We demonstrate the realization of narrow linewidth, high-power ridge waveguide DFB diode lasers emitting near 780?nm. The effects of the coupling coefficient, the laser chip length, and the fabrication process onto the spectral linewidth are discussed. By optimizing both the cavity length and the coupling coefficient, we achieve an intrinsic spectral linewidth as small as 35?kHz at an output power of 270?mW.     

A 795 nm gain coupled distributed feedback semiconductor laser based on tilted waveguides

The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition. In this paper, in order to realize specific 795 nm lasing, we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge. The fabricated devices were cleaved into 2 mm-cavity-length, including 5 tilted angles. The peak output powers of all devices were above 30 m W.Single longitudinal mode lasing was realized in all tilted Fabry–Perot cavities using periodic current injection windows,with side mode suppression ratio over 30 d B. The total wavelength range covered 8.656 nm at 20℃. It was disclosed theoretically and experimentally that the output powers, threshold currents, and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles. The results will be instructive for future design of DFB laser arrays with different central wavelengths.     

All-optical clock recovery using parallel ridge-width varied DFB lasers integrated with Y-branch waveguide coupler

A novel device with two parallel ridge-width varied distributed feedback (DFB) lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of butt-joint regrowth. A 22 GHz self-pulsation tuning range has been achieved by adjusting independently the driving currents of the two DFB lasers sections. 38.4 GHz all-optical clock recovery has been demonstrated for the first time using this device.     

低阈值单横模852nm半导体激光器

基于波导理论、等效折射率方法,设计并制备了非对称波导隔离双沟结构脊型边发射激光器,最终获得了低闽值单基侧模852 nm激光器.详细研究了不同脊型台深宽比参数设计对激光器侧向模式特性的影响规律,实现了腔面未镀膜情况下脊型波导边发射激光器的单基侧模稳定输出,同时激射波长可以精确调谐到852 nm;工作电流达到150 mA,工作温度30℃;斜率效率最高可达0.89 nW/mA,光谱半宽小于1 nm.研究结果为进一步实现超窄线宽激光器提供了参考和借鉴,并且为实现激光器稳定输出提供了实验基础.     

Mode Control of Quasi-PT Symmetry in Laterally Multi-Mode Double Ridge Semiconductor Laser

In traditional semiconductor lasers, it is usual to obtain single lateral mode operation by narrowing the ridge of waveguide, which is sensitive to fabrication inaccuracies. To overcome this shortcoming, a quasi-PT(parity-time)symmetric double ridge semiconductor laser is proposed to reach single lateral mode operation for an intrinsic multi-mode stripe laser. The coupled mode theory is used to analyze the non-Hermitian modulation of the gain(or loss) of the PT symmetric double ridge laser to obtain the coupling coefficient between the two ridge waveguides. Finally, the mode field distributions of the quasi-PT symmetric double ridge laser are simulated before and after the spontaneous PT symmetry breaking, which keep the laser operating in single lateral mode.     

λ／4相移分布反馈半导体激光器在高输出功率时的特性分析

从光场限制因子周期性主烨这一概念出发，指出在纯折射率耦合分布反馈激光器中存在着增益耦合作用，这种作用在阈值附近较小，但在输出功率增加时迅速大，并因此使λ／４相移分布反馈激光器的单模特性主。量子效应对这种增益耦合作用影响不大。在λ／４相移量子阱分布反馈激光器中，量子效应对空间烧孔效应有很强的抑制作用，因此在其高力功率值出特性出中，增益耦合的影响将变得比较明显。     

Polymer gratings based on photopolymerization for low-order distributed feedback polymer lasers

Novel polymer distributed feedback(DFB)gratings are fabricated based on photopolymerization to reduce lasing threshold of polymer lasers.A photopolymer formulation sensitive to 355-nm ultraviolet(UV)light is proposed for the fabrication of polymer gratings and it can be used to form polymer films by spin-coating process.A very low surface-relief depth ranging from 12.5 to about 1.0 nm has been demonstrated with a refractive-index modulation of about 0.012.The experimental results indicate that such polymer gratings have promising potentials for the fabrication of low-order DFB organic semiconductor lasers.     

Optically pumped distributed feedback thin film waveguide lasers with multiwavelength and polarized emissions

Zirconia titania organically modified silicate (ZrO₂-TiO₂-ORMOSIL) thin film waveguides of thickness from 0.4 to 7.0 μm were synthesized using low temperature sol–gel method. Narrow linewidth distributed feedback (DFB) lasing was demonstrated in rhodamine 6G-doped ZrO₂-TiO₂-ORMOSIL waveguides. Simultaneous tuning of multiple-output wavelengths was achieved in the dye-doped waveguides by varying the period of the gain modulation generated by a nanosecond Nd:YAG laser at 532 nm. As many as eight separate output wavelengths were observed for a planar ZrO₂-TiO₂-ORMOSIL waveguide of thickness 7.0-μm. The output polarizations of the DFB waveguide lasers can be tuned by varying the polarization of the crossing pump beams. TE and TM optical waves belonging to the same propagation mode were generated by crossing two polarized pump beams, resulting in an effective double of the number of output wavelengths. Continuous tuning of the polarized laser outputs was also achieved by varying the crossing angle.     

Dynamics of symmetrical mode beating in complex coupling two-section DFB lasers

The effect of gain/loss coupling on the modal dynamics of weakly-coupled self-pulsating two section DFB lasers is studied in detail. A purely symmetrical mode-beating regime exists for imaginary coupling values between  ? 5% and 12.5%. The minimum required static detuning, the modulation index, and the tuning range of the predicted self-pulsations are sensitive to the magnitude of the gain/loss coupling. For the 10% gain-coupled DFB laser above 90% modulation index is predicted for self-pulsations between 34% and 123 GHz. For the 5% loss-coupled DFB laser above 50% modulation index is predicted for self-pulsations between 27 and 155 GHz.     

Transient mode competition in directly modulated DFB semiconductor laser

A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift(EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between ?1st order(main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent ? phase shift(?-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the ?1st order wavelength is around the gain peak, while the stable single longitudinal mode(SLM) operation of the ?1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation(32 d B extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.     

Multimode coupling and nonlinear-gain effects in distributed and helical feedback gas lasers

We present a detailed experimental and theoretical study on the waveguide modes of distributed feedback (DFB) and helical feedback (HFB) gas lasers including for the first time the experimental verification of multimode-coupling and nonlinear-gain phenomena. For this purpose we used oversized hollow metal waveguides with periodic or helical corrugations. The latter exhibit the symmetry of either the single helix or the double helix. For the interpretation of our observations we developed a coupled-wave theory extended to multi-mode coupling and adapted the nonlinear-gain approach for strong coupling by Haus. The experiments with DFB and HFB gas lasers give new relevant information on these phenomena.On leave from Academia Sinica, Beijing, People's Republic of China     

高度方向性多光束有机激光

采用DFB分布反馈结构的有机激光由于其自身优点备受关注,而利用高阶布拉格反馈的多光束有机激光及其原理鲜有报道。不同于以往的低阶布拉格反馈形成单波导或单光束激光,本文通过在平面有机半导体波导引入高阶布拉格反馈分别制备了红色和蓝色多束有机激光器。利用四阶布拉格反馈和PVK：DCJTI薄膜实现三光束红光激光器,出射角度为±53°和0.5°。利用五阶布拉格反馈和PS：DSA-ph薄膜实现四光束蓝光激光器,出射角度为±18°和±75°。融合平面波导与光栅耦合的机理,研究了高阶布拉格光栅反馈与器件特性之间的关系。结果表明,理论计算的光束耦合角度和实际测试相符,结果在一定程度上为多光束有机激光器件的设计提供了参考。     

Antimonide-based lasers and DFB laser diodes in the 2–2.7 μm wavelength range for absorption spectroscopy

We report on Fabry–Pérot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The laser structures were grown by molecular beam epitaxy on GaSb substrates. The devices were etched either by wet process or by inductively coupled plasma (ICP) process. Electron-beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 μm and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy. PACS 42.55.Px; 42.62.Fi