Optical and vibrational properties of CdxHg1-x-y ZnyTe solid solutions

The lattice dynamics of Cd_xHg_1-x-y Zn_yTe solid solutions is studied theoretically and experimentally. The frequencies of the basic optical phonons of Cd_xHg_1-x-y Zn_yTe are calculated in terms of a modified random-element isodisplacement model. As a result, all basic vibrations of the crystal lattice that substantially affect the optical properties of this material in the spectral region corresponding to one-phonon resonance are identified. The optical properties of epitaxial Cd_xHg_1-x-y Zn_yTe layers grown by liquid-phase epitaxy on Cd_1-x Zn_xTe substrates are studied. The calculated and experimental spectral dependences of the dielectric function of Cd_xHg_1-x-y Zn_yTe solid solutions of various compositions are compared at 295 and 78 K, and good agreement between them is reached. The additional lattice vibrations whose frequencies in the phonon density of states are lower than that of the HgTe mode are shown to be caused by the lattice defects of the Cd_xHg_1-x-y Zn_yTe solid solutions.     

Variations of the band gap of Hg1 ? x Cd x Te solid solutions in response to a magnetic field

The optical transmission spectra of Hg_{1 ? x} Cd _x Te epitaxial layers with a magnetization gradient have been investigated experimentally. The magnetization gradient has been artificially created by the opposite arrangement of the poles of the magnets. The possibility of transforming the shape of the spectral dependences of the optical transmission of the HgCdTe films after their exposure to a magnetic field has been demonstrated. Assumptions about the mechanism underlying this phenomenon have been made.     

Avalanche breakdown in narrow gap semiconductors in crossed fields

The paper presents the results of experimental and theoretical investigations of interband breakdown in narrow gap Bi_1?xSb_x and Hg_1?xCd_xTe semiconductors in crossed electric and magnetic fields. Both these alloys show an increase of breakdown electric field in sufficiently strong magnetic field. In the case of Hg_1?xCd_xTe the breakdown field changes nonmonotonically with H. This is interpreted as being due to the transverse breakdown.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Cyclotron resonance in Hg1−xCdxTe at 337 micrometre in the range 77 K – 150 K

Cyclotron resonance experiments have been performed in transmission at 337 μm on Hg_1?xCd_xTe single crystals with x = 0.20 and 0.215, at temperatures between 77 and 150 K.     

First-principles study of the structural,electronic and optical properties of the cubic triangular quaternary ZnxCdyHg1-x-yTe alloys under hydrostatic pressure

In the present computational study, we have explored the structural, electronic and optical properties of ZnTe, CdTe and HgTe binary compounds and their ternary alloys Zn_xCd_1-xTe, Zn_xHg_1-xTe and Cd_xHg_1-xTe as well as their ordered quaternary Zn_xCd_yHg_1-x-yTe alloys using the full potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory. We have numerically estimated the total energies, the lattice parameters, the bulk moduli and their first pressure derivative using the generalized gradient approximation (GGA). The band structure is computed using the modified Becke-Johnson (TB-mBJ) approximation. Results of our study show a nonlinear dependence of the composition on the lattice constant, bulk modulus and band gap for the binary and ternary compounds as well as for the quaternary alloys. Additionally, the dielectric function, the refractive index and the loss energy were also reported. The pressure effect on the band gap energy and optical properties were also investigated and reported. Our results are in good agreement with experimental values and theoretical data available in the literature.     

The band structure and optical properties of the CdxHg1-xTe mixed crystals

The band structure of the Cd_xHg_1?xTe mixed crystals have been computed on the basis of tight-binding interpolation scheme and virtual crystal approximation. The bowing parameters of main energy gaps have been calculated as well as composition dependence of position of E₁ and E₁ + Δ₁ maxima in reflectivity spectra. Good agreement with previously reported experimental data has been found.     

Luminescence of CdMgTe with CdMnTe ultrathin nanolayers

The luminescence spectra of Cd_0.75Mn_0.25Te/Cd_{1 ? y} Mg _y Te superlattices with narrow-band-gap Cd_0.75Mn_0.25Te nanolayers having nominal thicknesses of 0.5, 1.5, and 3.0 monolayers (MLs) exhibit exciton emission bands of Cd_{1 ? y} Mg _y Te barriers and nanolayers, as well as intracenter luminescence of Mn²⁺ ions. For all samples, the luminescence spectra of Cd_0.75Mn_0.25Te nanolayers consist of two bands. From analyzing the dependences of the luminescence intensity on the nanolayer thickness and temperature, these bands are assigned to excitons localized at two-and zero-dimensional potentials. The intracenter emission of Mn²⁺ in 3.0-ML-thick Cd_0.75Mn_0.25Te clearly reveals excitation migration.     

Intracenter luminescence of Mn2+ in Cd1−x MnxTe and Cd1−x−y MnxMgyTe under intense optical pumping

A comparative analysis of the kinetic properties of intracenter 3d luminescence of Mn²⁺ ions in the dilute magnetic superconductors Cd_1?x Mn_xTe and Cd_1?x?y Mn_xMg_yTe is carried out. The influence of relative concentrations of the cation components on the position of the intracenter luminescence peak indicates that the introduction of magnesium enhances crystal field fluctuations. As a result, the processes facilitating nonlinear quenching of luminescence are suppressed. The kinetics of 3d-luminescence quenching in Cd_1?x Mn_xTe are accelerated considerably upon elevation of optical excitation level due to the evolution of cooperative processes in the system of excited manganese ions.     

Longitudinal magnetoresistance in zero-gap CdxHg1−xTe at low temperatures

The longitudinal magnetoresistance Δ?₆(H)/?₀ is studied experimentally in gapless solid solutions Cd_xHg_1?xTe (0 < x < 0.15) for temperatures 1.3–15 K and the electron concentrations n ～ 10¹⁵ cm^?3. The temperature and the magnetic field dependences of the observed negative longitudinal magnetoresistance are explained by the resonant nature of electron scattering by an acceptor level. The quantitative analysis of the $\text{Δ?6(H)}\text{?}{}_0$ field dependence for weak magnetic fields under strong carrier degeneracy makes it possible to evaluate parameters of the acceptor level involved.     

Spin effects on oscillatory magnetoresistances in n-Pb1−xSnxTe

Shubnikov-de Haas oscillations in n-Pb_1?xSn_xTe have been measured in the magnetic field parallel to the [100] crystal direction at 1.5 K. In the longitudinal magnetoresistances, the one-side peaks of spin-splitting pair series are completely missing. This anomaly is well explained by the selection rules, theoretically derived in the study on a similar effect in Hg_1?xCd_xTe. Landau sublevel-crossings are also discussed.     

Zeeman splitting of the conduction band of HgTe quantum wells with a semimetallic spectrum

Shubnikov–de Haas oscillations in Hg_1-xCd_x Te/HgTe/Hg_1-xCd_xTe structures with the widths of a well of 16 and 20 nm have been investigated in tilted magnetic fields. The spin-to-orbital splitting ratio in the conduction band has been found in a wide range of electron densities. The magnitude and density dependence of the ratio agree fairly well with the calculations of the spectrum in the 8-band kP model. It has been shown that the effective g factor is anisotropic, g_|| < g_┴. The anisotropy is very high at low densities but decreases rapidly with an increase in the density, approaching unity at n_e = (3?4) × 10¹¹ cm^-2.     

Optical coefficients of Hg1 − x − y Cd x Eu y Se crystals

Optical properties of Hg_{1 ? x ? y} Cd _x Eu _y Se crystals grown by the Bridgman method have been investigated based on the independent reflectance and transmittance measurements, which were performed on a Nicolet 6700 spectrometer at T = 300 K in the wavelength range 0.9 ≤ λ ≤ 26.6 μm. The values of refractive index n, absorption index k, and absorption coefficient α have been determined for the crystals studied. Based on the dependences α = f(hν), the presence of direct allowed interband optical transitions in the crystals is established and the band-gap values are determined. The influence of temperature on the transmittance and band gap are investigated in the range T = 114–300 K.     

A general optical characterization method for determining the composition of Hg1−xCdxTe samples

The rate of variation of transmission as a function of frequency or energy exhibits a maximum in the fundamental absorption region of the alloy semiconductor Hg_1−xCd_xTe. The maximum steepness occurs in the tail region of the absorption edge and its frequency can be correlated analytically with the composition. From the experimental measurements of room temperature IR transmission on both bulk grown and epilayers of Hg_1−xCd_xTe, it is shown that an analysis of the transmission curve at (dT_r/dE)_max leads to the determination of composition and compositional uniformity in the given sample.     

Optical properties of Hg1−xCdxTe

Optical properties of Hg_1−xCd_xTe are summarized in this study. Based on Penn-like models, the Moss relation and the Wemple and DiDomenico approach, calculations of energy gap, plasmon energy, Fermi energy, oscillator strength and electronic polarizability have been made. Comparisons are made with the data available in the literature. Details of the dependency of the properties on composition are presented.     

High performance p−n junctions in the LPE MnxCdyHg1−x−y Te layers

The electric properties of n⁺−p Mn_xCd_yHg,_1−x−yTe photodiodes with a cut-off wavelength of λ_co ∼ 3.3–3.8 μm at 77 K have been studied. The p−n junctions were created using ion implantation of boron into the p-type LPE epitaxial layers. Zero bias resistance-area product at T = 85 K is equal to 1.7 × 10⁷ Ω ·. cm² for the best sample (λ_co = 3.8 μm). For the material under study, this surpasses the values which have been reported up until now for a given spectral region, and is comparable with those of the best Cd_xHg_1−xTe diodes with similar energy gap values. Mechanisms of current flow through the p−n junctions at 77 < T < 200 K without and under background illumination are discussed.     

Spontaneous composition modulation during Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te(301) molecular beam epitaxy

The spontaneous composition modulation of a solid solution in Cd _x Hg_1?x Te during molecular beam epitaxy at CdTe/ZnTe/GaAs(301) substrates has been discovered. The study of the micromorphology of the film surfaces in an atomic-force microscope, together with the study of the film microstructure in a transmission electron microscope, has revealed that a periodic system of macrosteps oriented along the [010] direction and separated by (100) terraces is formed during epitaxial growth at temperatures higher than the optimal value on a Cd _x Hg_1?x Te(301) surface. The growth of the film of homogeneous composition is only possible at the fronts of macrosteps and it is not possible at (100) terraces, where a layered structure grows with composition modulated along the [100] direction having period of several tens of angström. The observed phenomenon is explained by decreased adsorption of mercury atoms in the (100) plane.     

Dual-wavelength stimulated emission from a double-layer Cd x Hg1 − x Te structure at wavelengths of 2 and 3 μm

Dual-wavelength stimulated emission from a double-layer Cd _x Hg_{1 ? x} Te heterostructure optically pumped by a pulsed Nd:YAG laser at temperatures T = 77–150 K is reported. The emission spectral lines have been observed at wavelengths λ₁ ～ 2 μm and λ₂ ～ 3 μm. Emission spectra recorded at different temperatures are presented.     

Coupled subband-phonon resonances in the far-infrared reflection from Hg1−xCdxTe surfaces

Subband resonances coupled to the lattice polarization are observed in the far-infrared reflection from surfaces of Hg_1?xCd_xTe. A substantial enhancement of signal amplitude occurs for frequencies just above ω_LO. At such a frequency the resonances show a large splitting of the collective-mode energy ?_nm and the single-particle mode energy E_nm.     

Influence of doping of mercury atom(s) on optoelectronic properties of binary cadmium chalcogenides - A density functional theory based investigation with different exchange-correlation functionals and including spin-orbit coupling

Influence of doping of mercury atom(s) on optoelectronic properties of binary cadmium chalcogenides have been investigated theoretically by designing the mercury doped cadmium chalcogenide ternary alloys in B3 phase at some specific Hg-concentrations and studying their optoelectronic properties using DFT based FP-LAPW methodology. The structural properties are computed using WC-GGA, while spin-orbit coupling included electronic and optical properties are computed using TB-mBJ, EV-GGA, B3LYP and WC-GGA exchange-correlation functionals. In addition, electronic properties of mercury chalcogenides are calculated precisely using the GGA+U functionals. The concentration dependence of lattice parameter and bulk modulus of each of the Hg_xCd_1−xS, Hg_xCd_1−xSe, Hg_xCd_1−xTe alloy systems show almost linearity. For each of the alloy systems, band gap decreases almost linearly with increase in Hg-concentration in the unit cell and contribution from charge exchange to the band gap bowing is larger than that from for each of the volume deformation and structural relaxation. Also, covalent bonding exists between different constituent atoms in each compound. Optical properties of each specimen are computed from their spectra of dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity, optical absorption coefficient and energy loss function. Several calculated results have been compared with available experimental and other theoretical data.