原子层沉积技术制备单原子催化剂（英文）

贵金属单原子催化剂因具有独特的催化性能和高的利用率而迅速引人关注.原子层沉积(ALD)逐渐成为大批量合成稳定单原子的有力工具.本文总结了采用ALD合成单原子的最新进展,以及未来的研究方向和趋势.     

原子层沉积：一种多相催化剂“自下而上”气相制备新策略

多相催化剂是极为重要的一类催化剂,在许多重要工业反应中扮演关键角色。然而,传统的湿化学合成手段在很多情况下难以做到对催化剂活性位点的结构、组成以及其周围局部环境的原子级精细调控,继而给优化催化剂性能、理解多相催化机理带来较大的挑战。原子层沉积(ALD)是一种气相催化剂合成技术,其原理是基于两种前驱体蒸汽交替进样并在载体表面上发生分子层面上的“自限制”反应,实现目标材料在载体表面上的精准沉积。利用其分子层面上的“自限制”反应特性,并通过改变沉积周期数、次序和种类等方法可以实现对催化剂活性位结构的原子级精细控制,进而为人们提供了一种催化剂“自下而上”精细可控合成的新策略。在本文中,我们总结了利用ALD方法在负载型单金属和双金属催化剂精细设计方面的进展,讨论了ALD方法在设计高效催化剂方面的特点与优势。特别地,我们总结了利用ALD方法制备单原子和双原子结构金属催化剂的方法与策略。此外,我们总结了利用氧化物可控沉积精准调控金属催化活性中心周围的微环境,从而实现提升催化剂活性、选择性和稳定性的方法。最后我们展望了ALD技术在催化剂制备领域中应用的潜力。     

异原子配位结构碳基单原子电催化剂结构与性能相关性的研究进展

单原子催化剂是一类以相互孤立的单个金属原子作为催化活性中心的、 具有高原子经济性及高活性的负载型催化剂, 被广泛应用于能源电催化领域. 近年来, 通过使用两种或两种以上原子与活性中心金属原子配位, 构建具有异原子配位结构的单原子材料, 展现了优异的电催化性能. 研究发现, 这种不对称的配位结构有效调控了中心金属原子的电子结构, 优化了催化反应的吸附和脱附能量, 提高了电催化的性能. 本文综合评述了具有异原子配位结构碳基单原子电催化剂的合成策略、 表征技术与方法, 以及在前沿能源电催化应用中的催化剂性能与结构之间的构效关系, 并展望了异原子配位结构碳基单原子电催化剂的研究前景.     

分子筛限域单原子金属催化剂的研究进展

分子筛由于具有规则的微孔孔道结构、 较大的表面积、 优异的(水)热稳定性, 被认为是限域合成超小尺寸金属物种的理想载体. 近年来, 分子筛限域单原子金属催化剂由于超高的金属分散度、 接近100%的金属利用率以及独特的电子结构, 被广泛地应用于重要的催化反应和气体吸附分离过程. 本文系统地总结了近年来分子筛限域不同类型单原子金属催化剂的合成策略, 以及其在多相催化和气体分离等领域的研究进展. 最后, 提出了分子筛限域单原子金属催化剂在合成与表征方面存在的挑战和未来的发展方向.     

单原子催化的最新进展

单原子催化剂由于其自身兼具均相催化剂的"孤立活性位点"和多相催化剂易于循环使用的特点,近年来受到了广泛关注.本综述概括了2015至2016年单原子催化领域的重要进展,重点介绍了新的催化剂制备方法、单原子金催化剂在CO氧化中的进展、单原子钯/铂催化的选择性加氢反应以及铂或非贵金属单原子催化剂在电化学中的应用等.在催化剂的合成方面,用传统的湿化学方法制备的单原子催化剂通常金属负载量较低,使得催化剂的常规表征比较困难.最近发展的一系列新型合成方法例如原子层沉积法、高温蒸汽转移法、光介还原法以及热解法等制备M?N?C等非贵金属催化剂等,尽管有不同程度的局限性,但均可以成功制备高负载量的单原子催化剂.单原子催化剂的载体得到了拓展,除传统的金属氧化物外,金属有机框架材料和二维材料等均被用于单原子催化剂的制备.在单原子催化剂的应用方面,金由于较高的电负性和与氧的弱相互作用能力,因而与氧化物载体作用较弱,不易形成单原子催化剂.但近期报道了成功制备的单原子金催化剂,在CO氧化反应、乙醇脱氢和二烯加氢反应中都有不错的进展.本文还介绍了铂和钯单原子(合金)催化剂在加氢反应中的优异活性及选择性,表明了单原子催化剂在选择性上的优势.将一种金属掺杂到另一种金属基底中制备的单原子合金催化剂也因其特异的性能备受关注.此外,对于化工生产中典型的均相催化反应,如氢甲酰化,单原子催化剂在无外加膦配体的情况下表现出高活性的同时还能很好地控制化学选择性,甚至达到令人满意的区域选择性,从实验上证明了单原子催化剂有望作为沟通均相催化和多相催化的桥梁.单原子催化剂在电催化和光催化中也得到了快速发展.铂单原子催化剂因其高原子利用率和高稳定性,在析氢反应和氧还原反应中有着良好的应用前景.另一方面,非贵金属特别是Co单原子催化剂在光电催化中因其优异的活性和巨大潜力得到了较深入的研究.除了上述进展,单原子催化领域还有许多基本问题需要继续深入研究,对单原子催化剂更加全面透彻的认识将为设计发展新型催化体系,扩展单原子催化领域提供指导和借鉴.     

单原子材料的冷冻合成

近年来, 单原子催化剂因其最大化的金属原子利用效率和高催化性能, 已成为能量存储和转化领域中的研究热点. 单原子催化剂的高活性主要来源于其低配位结构、 量子尺寸效应和原子与载体之间的强相互作用. 因此, 如何根据构-效关系开发通用且简单的制备高效单原子催化剂的方法具有重要的意义. 从实际应用的角度而言, 湿化学法因具有工艺简单和易于大规模生产的特性, 被认为是一种实现工业化制备单原子催化剂的方法, 现已开发了一系列制备负载型单原子催化剂的策略. 本文从独特的抑制反应物前驱体物质形核的角度出发, 总结了冷冻合成方法对形核的抑制机制, 进一步针对不同方面的应用, 探讨了单原子材料的催化机理, 并对其未来的发展进行了展望.     

单原子催化材料在电化学氢循环应用中的研究进展

单原子催化剂(SACs)是一类仅含有孤立的单个金属原子作为催化活性中心的催化材料. 由于其具有100%的原子利用率、 独特的化学结构及优异的催化活性等优点, 近年来在电化学催化和电能转换设备领域备受关注. 本文综合评述了单原子催化材料的设计理念、 合成方法和表征方法, 同时对其在氢电化学循环 (电解水制氢和氢燃料电池领域)的实际应用进行了系统介绍, 并对单原子催化材料的研究和应用前景进行了展望.     

单原子催化剂的合成及其能源电催化应用的研究进展

基于电化学反应的能源储存与转化技术为全球能源结构的转型提供了一条绿色、 可持续的途径, 高效的电催化剂在其中扮演着重要的角色. 得益于在物理、 化学性质上的独特优势, 单原子催化剂在电催化能源转化方面展现出巨大的应用前景. 本文综合评述了单原子催化剂的合成及其能源电催化应用的研究进展, 介绍了单原子催化剂的常见表征手段, 总结了单原子催化剂的合成方法(湿化学法、 高温热解法、 原子沉积法、 电化学沉积法等), 并介绍了该类材料在氧还原、 二氧化碳电还原、 电解水及氮气电还原反应中的研究进展, 重点探讨了催化剂微观结构与其性能之间的关系, 最后, 对单原子能源电催化领域所面临的挑战进行了总结, 并对该领域未来的发展方向进行了展望.     

石墨烯基单原子催化剂的合成、表征及分析

单原子催化剂具有配位数低、配位环境特殊、原子利用率极高和催化位点高度均一等优点,是沟通均相和异相催化剂之间的桥梁,有助于更好地认识催化反应的本质。本文综述了近年来国内外石墨烯基单原子催化剂的多种合成方法,包括原子层沉积法、浸渍-煅烧法、缺陷捕获法、配位锚定法和其他新颖方法的制备过程、合成原理和表征。在此基础上,本文对石墨烯基金属单原子催化剂在催化方面的性能进行阐述和分析,以期为单原子催化剂制备提供指导和参考。     

基底表面构建单原子催化剂与催化性能研究进展

近年来,单原子催化剂因其较高的催化活性和选择性等优点而受到了人们的广泛关注.我们综述了以C, Si, Ti, Al为基底的单原子催化剂的制备方法,并对以不同材料基底制备单原子催化剂的制备方法、形成机理及优势特点进行了比较.通过对单原子制备、表征方法及催化活性的概述,以期对制备单原子催化剂提供一定的借鉴和指导.研究表明,单原子催化剂的制备已从贵金属单原子催化剂向过渡金属单原子催化剂进行了转变.单原子催化剂的基底也不再仅仅局限于单一的形式.这些转变为单原子催化剂向传统催化领域迈进提供了可能.我们同时也对单原子催化剂在工业上的应用进行了介绍.     

Sinter‐Resistant Platinum Catalyst Supported by Metal–Organic Framework

Single atoms and few‐atom clusters of platinum are uniformly installed on the zirconia nodes of a metal‐organic framework (MOF) NU‐1000 via targeted vapor‐phase synthesis. The catalytic Pt clusters, site‐isolated by organic linkers, are shown to exhibit high catalytic activity for ethylene hydrogenation while exhibiting resistance to sintering up to 200 °C. In situ IR spectroscopy reveals the presence of both single atoms and few‐atom clusters that depend upon synthesis conditions. Operando X‐ray absorption spectroscopy and X‐ray pair distribution analyses reveal unique changes in chemical bonding environment and cluster size stability while on stream. Density functional theory calculations elucidate a favorable reaction pathway for ethylene hydrogenation with the novel catalyst. These results provide evidence that atomic layer deposition (ALD) in MOFs is a versatile approach to the rational synthesis of size‐selected clusters, including noble metals, on a high surface area support.     

Atomic layer deposition of metal oxides on pristine and functionalized graphene

We investigate atomic layer deposition (ALD) of metal oxide on pristine and functionalized graphene. On pristine graphene, ALD coating can only actively grow on edges and defect sites, where dangling bonds or surface groups react with ALD precursors. This affords a simple method to decorate and probe single defect sites in graphene planes. We used perylene tetracarboxylic acid (PTCA) to functionalize the graphene surface and selectively introduced densely packed surface groups on graphene. Uniform ultrathin ALD coating on PTCA graphene was achieved over a large area. The functionalization method could be used to integrate ultrathin high-kappa dielectrics in future graphene electronics.     

单原子催化剂的制备、表征及催化性能

单原子催化剂(SACs)是指金属以单原子形式均匀分散在载体上形成的具有优异催化性能的催化剂.与传统载体型催化剂相比,SACs具有活性高、选择性好及贵金属利用率高等优点,在氧化反应、加氢反应、水煤气变换、光催化制氢以及电化学催化等领域都具有广泛应用,是目前催化领域的研究热点之一.常见的SACs制备方法有共沉淀法、浸渍法、置换反应法、原子层沉积法以及反奥斯瓦尔德熟化法等.实验及理论研究表明,单原子催化剂高的活性和选择性可归因于活性金属原子和载体之间的相互作用及由此引起的电子结构改变.载体是影响单原子催化剂性能的重要因素之一.目前常用的SACs载体有金属氧化物、二维材料和金属纳米团簇等,本文着重综述了这三种负载型SACs的制备、表征、催化性能及催化机理,并概述了SACs未来可能的发展方向和应用.研究表明,共沉淀法、湿浸渍法和反奥斯瓦尔德熟化法等方法可用来制备氧化物负载的SACs.高角环形暗场像-扫描透射电子显微镜(HAADF-STEM)表明金属是以单原子形式均匀分散在载体上,近边X射线吸收精细结构(XANES)结果表明金属原子与载体之间存在着强相互作用.实验和理论研究均表明该类催化剂在CO氧化反应、水煤气转化及乙炔加氢生成乙烯等反应中具有高的催化活性和稳定性.采用化学气相沉积法和原子层沉积法等方法可以将金属原子稳定地负载在具有缺陷活性位点的石墨烯、MXene及六方氮化硼等二维材料上并相应制备出SACs.X射线吸收精细结构谱(EXAFS)和XANES分析表明样品中金属以单原子形式存在,而且金属原子与载体之间也存在着强相互作用,理论计算表明金属原子与二维载体之间的电荷转移是SACs活性高的主要原因.置换反应法和连续还原法是制备溶胶型SACs的有效方法,其中置换反应法可将活性金属原子原位组装在金属模板团簇的顶点位置,连续还原法可将活性原子负载于金属模板团簇的表面.DFT计算表明活性原子和金属模板团簇之间存在电荷转移效应,这是溶胶型SACs具有非常高的催化活性的主要原因.SACs下一步的研究方向可能是:(1)研究开发新型SACs,尽可能提高催化剂中活性金属原子的含量;(2)深入研究SACs的结构、活性以及催化机理之间的关系;(3)尝试将SACs大规模应用于工业催化.     

Atomic layer deposition of hafnium oxide from hafnium chloride and water

Hafnium oxide (HfO2) is a leading candidate to replace silicon oxide as the gate dielectric for future generation metal-oxide-semiconductor based nanoelectronic devices. Atomic layer deposition (ALD) has recently gained interest because of its suitability for fabrication of conformal films with thicknesses in the nanometer range. This study uses periodic density functional theory (DFT) to investigate the mechanisms of both half-reactions occurring on the growing surface during the ALD of HfO2 using HfCl4 and water as precursors. We find that the adsorption energy and the preferred site of adsorption of the metal precursor are strong functions of the water coverage. As water coverage increases, the metal precursor preferentially interacts with multiple surface adsorption sites. During the water pulse the removal of Cl can be facilitated by either a ligand exchange reaction or the dissociation of Cl upon increase in coordination of the Hf atom of the precursor. Our predicted potential energy surface indicates that a more likely mechanism is hydration of the adsorbed Hf complex up to a coordination number of 7, followed by the dissociation of a chloride ion that is stabilized by solvation. Born-Oppenheimer molecular dynamics (BOMD) simulations of an adsorbed metal precursor in the presence of a multilayer of water shows that Cl dissociation is facile if sufficient water molecules are present to solvate the Cl(-) anions. Hence, solvation plays a crucial role during the water pulse and provides an alternative explanation for why ALD growth rates for this system decrease at high temperatures.     

Creation and recovery of a W(111) single atom gas field ion source

Tungsten single atom tips have been prepared from a single crystal W(111) oriented wire using the chemical assisted field evaporation and etching method. Etching to a single atom tip occurs through a symmetric structure and leads to a predictable last atom unlike etching with polycrystalline tips. The single atom tip formation procedure is shown in an atom by atom removal process. Rebuilds of single atom tips occur on the same crystalline axis as the original tip such that ion emission emanates along a fixed direction for all tip rebuilds. This preparation method could be utilized and developed to prepare single atom tips for ion source development.     

Atomic layer deposition: An efficient tool for corrosion protection

Atomic layer deposition (ALD) is now a widely implemented thin film growing method. It is currently used in industrial fabrication processes of microelectronics and luminescent display technologies. Since compact and conformal films can be grown with perfect control of the thickness, ALD is envisioned in numerous other applications fields such as energy, sensing, biomaterials, and photonics. Although few reports can be found on its application to corrosion protection, it has been shown that the qualities of ALD can be highly beneficial to this field. After a brief review of the principle of ALD and the effect of the main parameters on the properties of the films, this report attempts to show the interest of this technique to mitigate corrosion. Various examples of successful uses of ALD to protect metallic and non-metallic surfaces in different fields are reviewed.     

Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes

Anodic aluminum oxide (AAO) membranes were characterized by UV Raman and FT-IR spectroscopies before and after coating the entire surface (including the interior pore walls) of the AAO membranes by atomic layer deposition (ALD). UV Raman reveals the presence of aluminum oxalate in bulk AAO, both before and after ALD coating with Al2O3, because of acid anion incorporation during the anodization process used to produce AAO membranes. The aluminum oxalate in AAO exhibits remarkable thermal stability, not totally decomposing in air until exposed to a temperature >900 degrees C. ALD was used to cover the surface of AAO with either Al2O3 or TiO2. Uncoated AAO have FT-IR spectra with two separate types of OH stretches that can be assigned to isolated OH groups and hydrogen-bonded surface OH groups, respectively. In contrast, AAO surfaces coated by ALD with Al2O3 display a single, broad band of hydrogen-bonded OH groups. AAO substrates coated with TiO2 show a more complicated behavior. UV Raman results show that very thin TiO2 coatings (1 nm) are not stable upon annealing to 500 degrees C. In contrast, thicker coatings can totally cover the contaminated alumina surface and are stable at temperatures in excess of 500 degrees C.     

Atomic layer deposition chemistry: recent developments and future challenges

New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu to replace Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These materials must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required.     

Single‐Atom Catalyst of Platinum Supported on Titanium Nitride for Selective Electrochemical Reactions

As a catalyst, single‐atom platinum may provide an ideal structure for platinum minimization. Herein, a single‐atom catalyst of platinum supported on titanium nitride nanoparticles were successfully prepared with the aid of chlorine ligands. Unlike platinum nanoparticles, the single‐atom active sites predominantly produced hydrogen peroxide in the electrochemical oxygen reduction with the highest mass activity reported so far. The electrocatalytic oxidation of small organic molecules, such as formic acid and methanol, also exhibited unique selectivity on the single‐atom platinum catalyst. A lack of platinum ensemble sites changed the reaction pathway for the oxygen‐reduction reaction toward a two‐electron pathway and formic acid oxidation toward direct dehydrogenation, and also induced no activity for the methanol oxidation. This work demonstrates that single‐atom platinum can be an efficient electrocatalyst with high mass activity and unique selectivity.     

金属单原子催化剂增强硫正极动力学的研究进展

单质硫具有理论能量密度高(2600 Wh·kg-1)、放电比容量高(1672mAh·g-1)、成本低等优势,是锂硫电池的理想正极材料。然而,在充放电过程中硫正极迟缓的反应动力学显著地限制了锂硫电池的性能。金属单原子催化剂(SMACs)具有独特的电子结构、金属含量低、理论上100%的原子利用率、催化活性高等优势,其不仅有效地促进了不同中间相的转化反应,而且可为含硫物质提供丰富的锚定位点,从而显著优化硫正极氧化还原反应动力学、多硫化物的穿梭行为和锂硫电池电化学性能。本文以剖析金属单原子催化剂与硫正极间的相互作用为出发点,结合其催化效应表征技术,重点解析了不同类型单原子催化剂的构筑策略、活性调控及其优化硫正极氧化还原行为的机制,展望了金属单原子催化剂在锂硫电池领域面临的挑战和未来发展方向。