GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the presence of an As₄ flux. The relationship between the As-rich (2 × 4) and c(4 × 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 × 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As₄ irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE–STM systems relying on sample quenching and transfer.     

Formation of a √3 × √3 surface on Si/Ge(1 1 1) studied by STM and LEED

We have performed a detailed study of the formation and the atomic structure of a √3 × √3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a √3 × √3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the √3 × √3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.     

An XPS study on the surface reduction of V2O5(0 0 1) induced by Ar ion bombardment

The effect of the irradiation with Al Kα X-rays during an XPS measurement upon the surface vanadium oxidation state of a fresh in vacuum cleaved V₂O₅(0 0 1) crystal was examined. Afterwards, the surface reduction of the V₂O₅(0 0 1) surface under Ar⁺ bombardment was studied. The degree of reduction of the vanadium oxide was determined by means of a combined analysis of the O1s and V2p photoelectron lines. Asymmetric line shapes were needed to fit the V³⁺2p photolines, due to the metallic character of V₂O₃ at ambient temperature. Under Ar⁺ bombardment, the V₂O₅(0 0 1) crystal surface reduces rather fast towards the V₂O₃ stoichiometry, after which a much slower reduction of the vanadium oxide occurs.     

Ab initio study of the chemical states of water on Cr2O3(0 0 0 1): From the isolated molecule to saturation coverage

The reactivity of the (0 0 0 1)-Cr–Cr₂O₃ surface towards water was studied by means of periodic DFT + U. Several water coverages were studied, from 1.2H₂O/nm² to 14.1H₂O/nm², corresponding to ¼, 1, 2 and 3 water/Cr at the (0 0 0 1)-Cr₂O₃ surface, respectively. With increasing coverage, water gradually completes the coordination sphere of the surface Cr atoms from 3 (dry surface) to 4 (1.2 and 4.7H₂O/nm²), 5 (9.4H₂O/nm²) and 6 (14.1H₂O/nm²). For all studied coverages, water replaces an O atom from the missing above plane. At coverages 1.2 and 4.7H₂O/nm², the Cr–O_s (surface oxygen) acid–base character and bond directionality govern the water adsorption. The adsorption is molecular at the lowest coverage. At 4.7H₂O/nm², molecular and dissociative states are isoenergetic. The activation energy barrier between the two states being as low as 12 kJ/mol, allowing protons exchanges between the OH groups, as evidenced by ab inito molecular dynamics at room temperature. At coverages of 9.4 and 14.1H₂O/nm², 1D- (respectively, 2D-) water networks are formed. The resulting surface terminations are –Cr(OH)₂ and –Cr(OH)₃– like, respectively. The increased stability of those terminations as compared to the previous ones are due to the stabilization of the adsorbed phase through a H-bond network and to the increase in the Cr coordination number, stabilizing the Cr (t_2g) orbitals in the valence band. An atomistic thermodynamic approach allows us to specify the temperature and water pressure domains of prevalence for each surface termination. It is found that the –Cr(OH)₃-like, –Cr(OH)₂ and anhydrous surfaces may be stabilized depending on (T, P) conditions. Calculated energies of adsorption and OH frequencies are in good agreement with published experimental data and support the full hydroxylation model, where the Cr achieves a 6-fold coordination, at saturation.     

Structure and reaction pathways of methyl lactate on Pd(1 1 1)

The adsorption and reaction of methyl lactate (CH₃CH(OH)COOCH₃) is studied in ultrahigh vacuum on a Pd(1 1 1) surface using temperature-programmed desorption (TPD) and reflection–absorption infrared spectroscopy (RAIRS). Methyl lactate reacts at relatively low temperatures (220 K) by O–H bond scission. This intermediate can either react with hydrogen to reform methyl lactate at 280–300 K or undergo β-hydride elimination to form flat-lying methyl pyruvate. This decomposes to form acetyl and methoxy carbonyl species as found previously following methyl pyruvate adsorption on Pd(1 1 1). These species predominantly react to form carbon monoxide, methane and hydrogen.     

Structural properties of Cu clusters on Si(1 1 1):Cu2Si magic family

Basing on the results of the scanning tunneling microscopy (STM) observations and density functional theory (DFT) calculations, the structural model for the Cu magic clusters formed on Si(1 1 1)7 × 7 surface has been proposed. Using STM, composition of the Cu magic clusters has been evaluated from the quantitative analysis of the Cu and Si mass transport occurring during magic cluster converting into the Si(1 1 1)‘5.5 × 5.5’-Cu reconstruction upon annealing. Evaluation yields that Cu magic cluster accommodates 20 Cu atoms with 20 Si atoms being expelled from the corresponding 7 × 7 half unit cell (HUC). In order to fit these values, it has been suggested that the Cu magic clusters resemble fragments of the Cu₂Si-silicide monolayer incorporated into the rest-atom layer of the Si(1 1 1)7 × 7 HUCs. Using DFT calculations, stability of the nineteen models has been tested of which five models appeared to have formation energies lower than that of the original Si(1 1 1)7 × 7 surface. The three of five models having the lowest formation energies have been concluded to be the most plausible ones. They resemble well the evaluated composition and their counterparts are found in the experimental STM images.     

Low temperature adsorption of oxygen on reduced V2O3(0 0 0 1) surfaces

Well ordered V₂O₃(0 0 0 1) films were prepared on Au(1 1 1) and W(1 1 0) substrates. These films are terminated by a layer of vanadyl groups under typical UHV conditions. Reduction by electron bombardment may remove the oxygen atoms of the vanadyl layer, leading to a surface terminated by vanadium atoms. The interaction of oxygen with the reduced V₂O₃(0 0 0 1) surface has been studied in the temperature range from 80 to 610 K. Thermal desorption spectroscopy (TDS), infrared reflection absorption spectroscopy (IRAS), high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) were used to study the adsorbed oxygen species. Low temperature adsorption of oxygen on reduced V₂O₃(0 0 0 1) occurs both dissociatively and molecularly. At 90 K a negatively charged molecular oxygen species is observed. Upon annealing the adsorbed oxygen species dissociates, re-oxidizing the reduced surface by the formation of vanadyl species. Density functional theory was employed to calculate the structure and the vibrational frequencies of the O₂ species on the surface. Using both cluster and periodic models, the surface species could be identified as η²-peroxo () lying flat on surface, bonded to the surface vanadium atoms. Although the O-O vibrational normal mode involves motions almost parallel to the surface, it can be detected by infrared spectroscopy because it is connected with a change of the dipole moment perpendicular to the surface.     

Stabilization of the (1 1 0) tetragonal zirconia surface by hydroxyl chemical transformation

Different hydroxyl coverages on the (1 1 0) and (1 0 1) surfaces of tetragonal zirconia have been studied with periodic density functional theory. The tetragonal zirconia (1 1 0) surface is polar and intrinsically unstable. It is however very efficiently stabilized by hydroxyl formation which decreases the effective charge of surface oxygen atoms and hence avoids the electrostatic instability. The hydroxylation induces a strong stabilization of the (1 1 0) surface with respect to the non-polar (1 0 1) termination, and explains why the (1 1 0) surface of ZrO₂ can be found in some catalytic preparations. Surface chemical transformation appears to be a more efficient way to stabilize the (1 1 0) surface in comparison with the surface reconstruction processes.     

Transport properties and defect analysis of La1.9Sr0.1NiO4 + δ

The oxygen flux through La_1.9Sr_0.1NiO_4 + δ has been measured as a function of oxygen activity gradient and temperature (750–1000 °C). The oxygen nonstoichiometry was determined by thermogravimetry in the temperature range of 400–1000 °C and oxygen partial pressures of 0.0002–1 atm. The total conductivity was measured over a similar range of conditions. The oxide ion partial conductivity derived from the oxygen flux data is approximately 4 orders of magnitude lower than the total, mainly p-type electronic conductivity. The defect structure was derived based on the data. Combining the oxygen flux and oxygen nonstoichiometry, the self diffusion coefficient of oxygen interstitials was evaluated.     

Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface

In this work, anodic porous alumina thin films with pores in the nanometer range are grown on silicon by electrochemistry and are used as masking material for the nanopatterning of the silicon substrate. The pore diameter and density are controlled by the electrochemical process. Through the pores of the alumina film chemical oxidation of the silicon substrate is performed, leading to the formation of regular arrays of well-separated stoichiometric silicon dioxide nanodots on silicon, with a density following the alumina pores density and a diameter adjustable by adjusting the chemical oxidation time. The alumina film is dissolved chemically after the SiO₂ nanodots growth, revealing the arrays of silicon dioxide dots on silicon. In a next step, the nanodots are also removed, leaving a nanopatterned bare silicon surface with regular arrays of nanopits at the footprint of each nanodot. This silicon surface structuring finds interesting applications in nanoelectronics. One such application is in silicon nanocrystals memories, where the structuring of the oxidized silicon surface leads to the growth of discrete silicon nanocrystals of uniform size. In this work, we examine the electrical quality of the Si/SiO₂ interface of a nanostructured oxidized silicon surface fabricated as above and we find that it is appropriate for electronic applications (an interface trap density below 1–3×10¹⁰ eV⁻¹ cm⁻² is obtained, indicative of the high quality of the thermal silicon oxide).     

Free radical reactions at the Ru(0 0 0 1) surface: Atomic oxygen and dissociated NH3

X-ray photoelectron spectroscopy was used to study the effect of atomic oxygen on Ru(0 0 0 1), and the effect of dissociated ammonia on RuO₂/Ru(0 0 0 1), in UHV conditions at ambient temperature. The Ru(0 0 0 1) surface was exposed, at ambient temperature, to a mixed flux of atomic and molecular oxygen generated by dissociation of O₂ in a thermal catalytic cracker, with 45% dissociation efficiency. The detailed study of the XPS spectra shows the formation of a disordered multilayer oxide (RuO₂). No formation of higher oxides of Ru was observed. The formation of RuO₂ proceeded without saturation for total oxygen exposures of up to 10⁵ Langmuir, at which point an average oxide thickness of 68 Å was observed. RuO₂ formed by the reaction with atomic oxygen was exposed to a flux of NH_x (x = 1, 2) + H generated by the cracker. The reduction of RuO₂ to Ru metal was observed by XPS. An exposure of 3.6 × 10² L of NH_x + H, resulted in the observation of adsorbed H₂O and OH, but no evidence of lattice oxide. The chemisorbed species were removed by additional NH_x + H exposure. No nitrogen adsorption was observed.     

Observation of charge transfer states of F4-TCNQ on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface

We have investigated the valence electronic states of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ) on the 2-methylpropene chemisorbed Si(1 0 0)(2 × 1) surface using valence photoelectron spectroscopy. Since the electron affinity of condensed F₄-TCNQ is 5.24 eV and the energy from the valence band maximum of the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface to the vacuum level is 4.1 eV, spontaneous charge transfer would be expected in the present system. At sub-monolayer coverage of F₄-TCNQ, characteristic peaks are observed at 1.1 and 2.5 eV below Fermi energy. The former peak is assigned to a singly occupied affinity level, and the latter is ascribed to a relaxed highest occupied molecular orbital of adsorbed F₄-TCNQ. The work function change is increased up to +1.3 eV as a function of F₄-TCNQ coverage. These results support the occurrence of charge transfer into F₄-TCNQ on the 2-methylpropene saturated Si(1 0 0)(2 × 1) surface.     

HREELS and LEED studies on Cu deposited on 1 × 1 reconstructed α-Fe2O3(0001) surfaces

High-resolution electron energy-loss spectroscopy (HREELS), low-energy electron diffraction, and X-ray photoelectron spectroscopy have been used to study clean 825 K-preannealed α-Fe₂O₃-1 × 1 (haematite) surfaces, an α-Fe₂O₃-(0001)-1 × 1 surface reconstructed with Fe₃O₄(111)-1 × 1 and to study Cu deposited on room-temperature surfaces of those. Three pronounced losses, at 47.5, 55.5 and 78.0 meV, of the surface phonons for the clean α-Fe₂O₃(0001) were observed. By deposition of copper, Cu---O vibrational features observed by HREELS indicate formation of a Cu(I) state for the very low coverages. Increased submonoloayer amounts of Cu result in clustering of the copper, leading for both the α-Fe₂O₃(0001)-1 × 1 and the reconstructed composite substrate surfaces to Cu(111) epitaxial growth.     

A structural study of a C3H3 species coadsorbed with CO on Pd(1 1 1)

The combination of chemical-state-specific C 1s scanned-energy mode photoelectron diffraction (PhD) and O K-edge near-edge X-ray absorption fine structure (NEXAFS) has been used to determine the local adsorption geometry of the coadsorbed C₃H₃ and CO species formed on Pd(1 1 1) by dissociation of molecular furan. CO is found to adopt the same geometry as in the Pd(1 1 1)c(4 × 2)-CO phase, occupying the two inequivalent three-fold coordinated hollow sites with the C–O axis perpendicular to the surface. C₃H₃ is found to lie with its molecular plane almost parallel to the surface, most probably with the two ‘outer’ C atoms in equivalent off-atop sites, although the PhD analysis formally fails to distinguish between two distinct local adsorption sites.     

Density-functional study of the CO chemisorption on bimetallic Pd–Sn(1 1 0) surfaces

We study the ordered PdSn c(2 × 2), (2 × 1), and PdSn₂ (3 × 1) overlayers deposited on Pd(1 1 0) by using first-principles density-functional calculations. It appears that the two PdSn structures are almost degenerate in the energy. Pd–Sn surfaces we consider do not display the marked buckling with Sn atoms displaced towards vacuum that is common for Pt–Sn surfaces. Low-coverage CO chemisorption at these overlayers and on analogous surface structures on Pd₃Sn is considered. It is shown that inclusion of an empirical correction to the CO adsorption energy changes the stable adsorption site from the long-bridge to the top one in most cases. The adsorption energy decreases with the number of Sn atoms in the vicinity of the adsorption site, and this property correlates well with the position of the centre of gravity of the local Pd d-electron band, and also with the variation of the local density of d-electron states at the Fermi level. The centre-of-gravity value is used to assess the core-level shifts for Pd atoms in various geometries. Most of the calculated data compare rather well with the recent measurements on Pd–Sn overlayers at Pd(1 1 0) as well as with other data on related bimetallic systems.     

Reactivity of monolayer V2O5 films on TiO2(1 1 0) produced via the oxidation of vapor-deposited vanadium

The growth, and reactivity of monolayer V₂O₅ films supported on TiO₂(1 1 0) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy and temperature programmed desorption (TPD). Oxidation of vapor-deposited vanadium in 10⁻⁷ Torr of O₂ at 600 K produced vanadia films that contained primarily V³⁺, while oxidation in 10⁻³ Torr at 400 K produced films that contained primarily V⁵⁺. The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film.     

Effect of Y2O3 addition on the conductivity and elastic modulus of (CeO2)1 − x(YO1.5)x

The conductivity and elastic modulus of (CeO₂)_1 − x(YO_1.5)_x for x values of 0.10, 0.15, 0.20, 0.30, and 0.40 were investigated by experiments and molecular dynamics simulations. The calculated conductivity exhibited a maximum value at approximately 15 mol% Y₂O₃; this trend agreed with that of the experimental results. In order to clarify the reason for the occurrence of the maximum conductivity, the paths for the transfer of oxygen vacancies were counted. The numerical result revealed that as the content of Y₂O₃ dopant increases, the number of paths for the transfer of oxygen vacancies decreases, whereas the number of oxygen vacancies for conductivity increases. Thus, the trade-off between the increase in the number of vacancy sites and the decrease in the vacancy transfer was considered to be the reason for the maximum conductivity occurring at the Y₂O₃ dopant content of approximately 15 mol%. The calculated elastic modulus also exhibited a minimum value at approximately 20 mol% Y₂O₃, which also agreed with the experimental results. It was shown that the Y–O–Y bonding energy increased with the increasing content of Y₂O₃ dopant. Thus, the trade-off between the increase in the number of vacancy sites and that in the Y–O–Y bonding energy was considered to be the reason for the minimum elastic modulus occurring at the Y₂O₃ dopant content of approximately 20 mol%.     

Lithium ion conductive glass–ceramics with Li3Fe2(PO4)3 and YAG laser-induced local crystallization in lithium iron phosphate glasses

The glasses with the composition of 37.5Li₂O–(25 − x)Fe₂O₃–xNb₂O₅–37.5P₂O₅ (mol%) (x = 5,10,15) are prepared, and it is found that the addition of Nb₂O₅ is effective for the glass formation in the lithium iron phosphate system. The glass–ceramics consisting of Nasicon-type Li₃Fe₂(PO₄)₃ crystals with an orthorhombic structure are developed through conventional crystallization in an electric furnace, showing electrical conductivities of 3 × 10^− 6 Scm^− 1 at room temperature and the activation energies of 0.48 eV (x = 5) and 0.51 eV (x = 10) for Li⁺ ion conduction in the temperature range of 30–200 °C. A continuous wave Nd:YAG laser (wavelength: 1064 nm) with powers of 0.14–0.30 W and a scanning speed of 10 μm/s is irradiated onto the surface of the glasses, and the formation of Li₃Fe₂(PO₄)₃ crystals is confirmed from XRD analyses and micro-Raman scattering spectra. The crystallization of the precursor glasses is considered as new route for the fabrication of Li₃Fe₂(PO₄)₃ crystals being candidates for use as electrolyte materials in lithium ion secondary batteries.     

A simple statistical model for V2O5 catalysis

In this work we propose a model to describe the selective oxidation of hydrocarbons at the surface of the V₂O₅ catalyst. The main ingredients of the model are the concentration of vanadium active sites, the surface and bulk diffusion rates of oxygen vacancies and the probability rate of a hydrocarbon reaction. The reactions take place at the free V₂O₅ (0 1 0) surface, and the diffusion of vacancies occur along the [0 1 0] (bulk) and [0 0 1] (surface) directions. The coupling between V₂O₅ and a given metal oxide support determines the concentration of the active vanadium sites, where the reactions can occur. Only the oxygen atoms, which are coordinated to three vanadium sites, take part of the oxidation process. In our calculations we employed two different approaches, single site and pair approximations, and some Monte Carlo simulations. We have found the dependence of the critical concentration of vacancies on the diffusion rates, probability of reaction, and fraction of active vanadium sites, for the catalyst to operate in an active steady state.     

Oxide ion conductivity and relaxation in CaREZrNbO7 (RE = La, Nd, Sm, Gd, and Y) system

CaREZrNbO₇ (RE = La, Nd, Sm, Gd and Y) system changed from fluorite (F)-type to pyrochlore (P)-type structure when the ionic radius ratios, r(Ca²⁺–RE³⁺)_av/r(Zr⁴⁺–Nb⁵⁺)_av were larger than 1.34. Thus, the La, Nd, and Sm compounds have a cubic P-type structure and the Gd and Y ones have a defect F-type structure. The electrical conductivity was measured using complex-plane impedance analysis over a wide temperature (300–750 °C) and frequency (1 Hz–1 MHz) ranges. The conductivity relaxation phenomenon was observed in these compounds and the relaxation frequencies were found to show Arrhenius-type behavior and activation energies were in good agreement with those obtained from high temperature conductivity plots. These results support the idea that the relaxation process and the conductivity have the same origin. The ionic conductivity of CaREZrNbO₇ (RE = La, Nd, Sm, Gd and Y) system showed the maximum at the phase boundary between the F-type and P-type phases. On the other hand, the activation energy for the conduction decreased in the F-type phase and increased in the P-type phase with increasing ionic radius ratio. Among the prepared compounds, CaGdZrNbO₇ showed the highest ionic conductivity of 9.47 × 10^− 3 S/cm at 750 °C which was about twice as high as that observed in Gd₂Zr₂O₇ (4.2 × 10^− 3 S/cm at 800 °C). The grain morphology observation by scanning electron microscope (SEM) showed well-sintered grains. AC impedance measurements in various atmospheres further indicated that they are predominantly oxide ion conductors at elevated temperatures (> 700 °C).