Correlation between deformation bleaching and mechanoluminescence in coloured alkali halide crystals

The present paper reports the correlation between deformation bleaching of coloration and mechanoluminescence (ML) in coloured alkali halide crystals. When the F-centre electrons captured by moving dislocations are picked up by holes, deep traps and other compatible traps, then deformation bleaching occurs. At the same time, radiative recombination of dislocation captured electrons with the holes gives rise to the mechanoluminescence. Expressions are derived for the strain dependence of the density of colour centres in deformed crystals and also for the number of colour centres bleached. So far as strain, temperature, density of colour centres, E _a and volume dependence are concerned, there exists a correlation between the deformation bleaching and ML in coloured alkali halide crystals. From the strain dependence of the density of colour centres in deformed crystals, the value of coefficient of deformation bleaching D is determined and it is found to be 1.93 and 2.00 for KCl and KBr crystals, respectively. The value of (D+χ) is determined from the strain dependence of the ML intensity and it is found to be 2.6 and 3.7 for KCl and KBr crystals, respectively. This gives the value of coefficient of deformation generated compatible traps χ to be 0.67 and 1.7 for KCl and KBr crystals, respectively.     

Thermoluminescence characterization of the irradiated minerals extracted from nopal

The mineral fraction from dehydrated nopal leaves (Opuntia ficus indica) belonging to the Cactaceae family was extracted and selected by sizes of 10 and 74 μm and exposed to ⁶⁰Co gamma radiation at different doses in the range 70 Gy–20 kGy. The glow-curves from these polyminerals show a thermoluminescence (TL) band with one very intense peak at a temperature around 150 °C and a second one emerging in the high temperature region, moving in a large zone of temperature values according to the preparation used and the level of irradiation. The XRD analysis shows a composition of both biominerals as whewellite and weddellite and a mineral fraction as anorthoclase and quartz. The main TL characteristics of the polymineral content of the nopal was analyzed, i.e. the TL response at different doses and fading during storage at room temperature. The activation energy of the traps responsible for the TL emission was also investigated and a possible continuous distribution of traps is discussed. A review of the scientific literature shows that this is the first time that a TL study on nopal ionized by irradiation has been carried out.     

Effects of aggregation of squaryl dye on photogeneration of charges in amorphous molecular semiconductors based on poly-N-epoxypropyl carbazole

Peculiarities of photoconductivity, photoabsorption, and photoluminescence of poly-N-epoxypropyl carbazole films doped with an intraionic dye are investigated. The anomalous temperature dependences of the photoconductivity of the films in the dye absorption region are explained by studying the effect of the dye concentration, temperature, and external electric field on the liberation of captured charges from the traps formed in the films as a result of doping. It is concluded that an increase in the dye concentration enhances its aggregation, intensifies the photogeneration of triplet electron-hole pairs, and narrows the spatial distribution of traps for holes in the vicinity of the dye. The hole charges captured in such traps are connected through the Coulomb interaction with negatively charged fragments of dye molecules. The traps are destroyed through thermal activation.     

Determination of deep electron traps in GaAs by time-resolved capacitance measurement

A useful technique of determining the energy levels and the spatial density distributions of multiple electron traps in semi-conductor has been developed using the time-resolved measurement of the Schottky barrier junction capacitance, and this technique has been applied to characterize the electron traps inn-GaAs. In the present technique, the energy levels are determined from single scan of temperature, and the density distributions are calculated from a set of capacitance-voltage relationships. Four traps which lay at 0.39, 0.73, 0.79, and 0.58 eV below the conduction band edge were observed in boat grown or vapor phase epitaxially grown crystals. Many layers which were obtained by a vapor phase epitaxial growth system with N₂ carrier gas were measured and it was found that almost all of them include the 0.73 eV and the 0.79 eV trap with the density between 1×10¹³ and 2×10¹⁵ cm⁻³.     

Thermoluminescence of anion-deficient aluminum oxide single crystals after high-dose irradiation by nanosecond electron pulses

The effect of deep traps filled by a pulsed electron beam on the dosimetric thermoluminescence (TL) peak at 450 K in anion-deficient aluminum oxide single crystals has been investigated. After filling deep traps, the dosimetric TL peak becomes nonelementary and is characterized by a complex dependence of the TL intensity on the crystal annealing temperature with alternating fall and rise portions. The influence of the occupancy of deep centers of different nature and different energy depths on the structure of dosimetric TL peak is analyzed. The suggestion that basically electron traps are depleted in the temperature ranges of 600–750 and 900–1000 K while holes are depleted at T = 780–900 and above 1000 K is substantiated. The possibility of using TL deep traps for high-dose dosimetry of pulsed electron beams is demonstrated.     

Random walks on lattices with randomly distributed traps I. The average number of steps until trapping

For a random walk on a lattice with a random distribution of traps we derive an asymptotic expansion valid for smallq for the average number of steps until trapping, whereq is the probability that a lattice point is a trap. We study the case of perfect traps (where the walk comes to an end) and the extension obtained by letting the traps be imperfect (i.e., by giving the walker a finite probability to remain free when stepping on a trap). Several classes of random walks of varying dimensionality are considered and special care is taken to show that the expansion derived is exact up to and including the last term calculated. The numerical accuracy of the expansion is discussed.     

聚四氟乙烯和氟化乙丙烯共聚物复合膜的压电性

以多孔PTFE膜为骨架,而以致密（非多孔）FEP膜为储电介质层的孔洞结构复合压电驻极体膜的制备方法.利用正压电效应,测量了复合膜的准静态压电系数d₃₃;研究了压电系数的热稳定性和复合膜中空间电荷的动态特性;并通过介电谐振谱的分析,比较了这类复合膜的准静态和动态压电系数.结果表明：FEP和PTFE复合膜压电驻极体的准静态压电系数d₃₃可以达到300 pC/N.经90℃老化20 h 后的d₃₃仍保持在初 关键词： 压电驻极体 压电性 多孔聚四氟乙烯 致密氟化乙丙烯共聚物     

On the trapping of positrons in cadmium in the temperature range from 80 to 330 K

The positron lifetime was measured in cadmium in the temperature range between 80 K and 500 K. For the first time a plateau was observed by this method in polycrystalline samples. The obtained data are well explained by depletion of shallow traps forT180 K and by self-trapping in the prevacancy region.     

Post-IR IRSL production in perthitic feldspar

A museum sample of perthitic feldspar was used to study the production of post-IR IRSL signals. It was found that traps responsible for low temperature (∼230 °C) TL peaks play an unexpectedly important role in post-IR IRSL production. During the production of the IRSL signal during low temperature IR stimulation (100 °C), electrons are optically transferred from IRSL traps into these TL traps which have been emptied by the preceding preheat at 320 °C. Subsequent heating to 300 °C causes thermal transfer of these electrons from these traps back into previously emptied IRSL traps which are related to the high temperature TL peaks. IR stimulation of these electrons results in post-IR IRSL. Thus the initial source of the post-IR IRSL signal is the same as the IRSL signal, with a role being played by intermediate traps that give rise to TL signals between 200 and 250 °C, and the final source is similar to that of the IRSL signal. Therefore the post-IR IRSL signal is a by-product of the production of the IRSL signal. It was also found that post-IR IRSL production with high post-IR IR stimulation temperatures (e.g. >230 °C) additionally includes a small contribution from the post-IR isothermal decay of high temperature TL peaks that are not sensitive to IR stimulation at low stimulation temperatures.     

Interactive process in the mechanism of thermostimulated luminescence in anion-defect α-Al2O3 crystals

A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al₂O₃ single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model involving trap interaction is proposed, which differs radically from the others described in the literature by taking into account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study (TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally. Fiz. Tverd. Tela (St. Petersburg) 40, 229–234 (February 1998)     

On luminescence stimulated from deep traps using thermally-assisted time-resolved optical stimulation in α-Al2O3:C

We report a study of charge transfer mechanisms of electrons stimulated optically from very deep traps, also known as donor traps, in α-Al₂O₃:C. The investigations were carried out using thermally-assisted time-resolved optical stimulation, thermoluminescence and by way of residual thermoluminescence from the main electron trap. When the charges are optically stimulated from the deep traps, they are redistributed via the conduction band to the main electron trap and the shallow trap from where they are optically or thermally released for recombination at luminescence centres. The luminescence is strongly quenched at high measurement temperature as evident by very short luminescence lifetimes at these temperatures. The main peak due to residual thermoluminescence is located at a higher temperature than the conventional main peak.     

A study of electron traps in vapour-phase epitaxial GaAs

The occurence and physical properties of electron traps in device-quality VPEn-GaAs are studied using transient capacitance and DLTS (deep level transient spectroscopy). Four traps labeled A, B, C, and F are seen. Trap A is identified to be the same as the often reported one, commonly attributed to oxygen in substrate material; this trap is also dominant in the VPE layers. The other traps are (to our knowledge) reported here for the first time. No correlation appears to exist between the concentrations of the various traps. The emission rate vs. temperature dependence, a characteristic physical property, is obtained for each of these traps.     

动态应力下超薄栅氧化层经时击穿的可靠性评价

实验发现动态电压应力条件下,由于栅氧化层很薄,高电平应力时间内隧穿入氧化层的电子与陷落在氧化层中的空穴复合产生中性电子陷阱,中性电子陷阱辅助电子隧穿.由于每个周期的高电平时间较短(远远低于电荷的复合时间),隧穿到氧化层的电子很少,同时低电平应力时间内一部分电荷退陷,形成的中性电子陷阱更少.随着应力时间的累积,中性电子陷阱达到某个临界值,栅氧化层突然击穿.高电平时形成的陷阱较少和低电平时一部分电荷退陷,使得器件的寿命提高. 关键词： 超薄栅氧化层 斜坡电压 经时击穿     

New oxygen donors in silicon

Oxygen donor traps and oxygen-related precipitates are investigated by deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). The so-called New Donors (ND's) occur after thermal treatments in the temperature range of 650 °–800 ° C. They have a continuous distribution of trap states with respect to energy in the band gap of Si. The concentration of the trap states increases towards the conduction band edge. The precipitates observed are mainly platelets and ribbon-like defects. The formation and annihilation kinetics of ND traps and oxygen-related precipitates are correlated. An SiO _x Interface Model is proposed to explain the origin and the donor-like behavior of the ND traps. The ND trap spectrum is composed of two different types of trap states: interface states at the surface of precipitates and bound states in the Coulombic wells of a fixed positive charge which is located in the SiO _x precipitates.     

Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

High purity semi-insulating 4H SiC single crystals have potential applications for room temperature radiation detectors because of the wide band gap and radiation hardness. To control carrier lifetime, a key parameter for high performance radiation detectors, it is important to understand the nature of the deep traps in this material. For this purpose, we have successfully applied thermally stimulated current (TSC) and high temperature resistivity measurements to investigate deep level centers in semi-insulating 4H SiC samples grown by physical vapor transport. High temperature resistivity measurements showed that the resistivity at elevated temperatures is controlled by the deep level with an activation energy of 1.56 eV. The dominant traps revealed by TSC measurements were at 1.1-1.2 eV. The deep trap levels in 4H-SiC samples, the impurity and point defect nature of TSC traps peaked at ∼106 K (0.23 eV), ∼126 K (0.32 eV), ∼370 K (0.95 eV), ∼456 K (1.1-1.2 eV) are discussed.     

Luminescence and energy transfer in TbAl3B4O12

An investigation of the luminescence properties of TbAl₃B₄O₁₂ in the temperature region 1.4–300 K is reported. Laser site-selection and time-resolution techniques were used.The results show that energy migration among Tb³⁺ ions on the regular crystallographic sites occurs. The transfer characteristics at room temperature are consistent with a diffusion-limited transfer process to Mo³⁺ quenching centres. The diffusion constant and the critical transfer distance for Tb³⁺ → Mo³⁺ transfer are derived. The rate of diffusion increases for decreasing temperature. At about 60 K a transition from diffusion-limited transfer to trapping-limited transfer occurs. This behaviour is due to the variation in the diffusion constant with temperature. In the temperature region below 60 K transfer to Tb³⁺ traps is observed. The intensity of the emission from the traps increases exponentially with decreasing temperature. However, the overall transfer rate to Mo³⁺ and traps remains roughly constant. A simple model including time-independent transfer rates and back transfer from traps to intrinsic Tb³⁺ ions is proposed to explain the results. The rates of transfer to Mo³⁺ and traps are obtained.     

Phototransferred Thermoluminescence of Dosimetric α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Crystals Irradiated by a Pulsed Electron Beam

The thermoluminescence (TL) of deep traps of anion-defective alumina monocrystals irradiated by a high-dose (more than 1 kGy) pulsed electron beam (130 keV) is studied. The deep traps in the studied material are classified according to the TL temperature range. It is demonstrated that the phototransferred thermoluminescence (PTTL) in the temperature range of the main TL peak is induced by optical charge migration from deep traps that are emptied at 400–470 and 470–600°C. An anomalous PTTL enhancement in crystals subjected to stepped annealing in the 350–400°C interval is observed. It is demonstrated that this effect may be caused by competing processes of charge transfer that involve deep traps corresponding to the TL peak at 390°C. The applicability of PTTL in the dosimetry of high-dose (1–50 kGy) pulsed electron beams is established.     

Unusual temperature dependences of the photoconductivity and recombination luminescence of amorphous molecular semiconductors doped with ionic dyes

A nonexponential increase in photoconductivity with increasing temperature is discovered for poly(N-epoxypropylcarbazole) (PEPK) films doped with polymethine dyes. It is postulated that traps for nonequilibrium charge carriers form in these films during irradiation and are destroyed as the temperature is raised. Such traps are manifested by broadening of the high-temperature shoulder on the thermally stimulated luminescence (TSL) curves following the preliminary irradiation of PEPK films doped with polymethine and xanthene ionic dyes in the visible or UV range at 250–320 K and by the appearance of a new narrow TSL maximum near the preliminary irradiation temperature. These TSL features disappear after prolonged storage of the films in the dark or heating to higher temperatures. Fiz. Tverd. Tela (St. Petersburg) 41, 203–209 (February 1999)     

Impact of proton irradiation with different fluences on the characteristics of InP/InGaAs heterostructure

ABSTRACT

The effect of traps to C–V and I–V plots of InP/InGaAs heterostructure with 3?MeV proton irradiation at different fluences has been discussed. After proton irradiation, the total reverse capacitance increases, which does not only include the variation of the depletion region width, but also the charging and discharging effect of traps. The total actual traps density N_SS of InP/InGaAs heterostructure could reach 13 orders of trap density, which is from the peak under reverse bias. The forward current is dominated by recombination current at low voltage and by the tunneling current at high voltage. The tunneling current and trap-assisted tunneling current are dominant in the reverse current.     

Nature of the anomalies of the thermolumenescence properties of dosimetric α-Al2O3 crystals

The results of investigations into the anomalies of the thermoluminescence properties of dosimetric corundum crystals are presented. The decisive role of deep-lying traps in the quenching of luminescence in anion-defect Al₂O₃ monocrystals is shown. The existence of deep-lying traps is demonstrated by the method of direct observations of thermoluminescence (TL) peaks associated with them. Experimental evidence for the influence of the degree of occupation of deep-lying traps on the main features of the TL dosimetric peak at 450 K is given. The results obtained are interpreted for a model of the interactive system of traps, which differs radically from the models described in the literature by a consideration of the temperature dependence of the probability of trapping of charge carriers on deep-lying traps. We believe that the heat quenching of luminescence is due to the thermal ionization of excited F-center states. Ural State Technical University. Translated from Izvestiya Vysshikh Uchebhykh Zavedenii, Fizika, No. 3, pp. 55–65, March, 2000.